Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IPU80R1K2P7AKMA1

Part No.:
IPU80R1K2P7AKMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-251-3 Short Leads, IPAK, TO-251AA
Datasheet:
AetrixIPU80R1K2P7AKMA1.pdf
Description:
MOSFET N-CH 800V 4.5A TO251-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,772

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IPU80R1K2P7AKMA1 from Infineon is an 800V N-channel superjunction MOSFET in PG-TO251-3 (IPAK) package, optimized for hard/soft-switching flyback and PFC stages. It delivers RDS(on) = 1.2 Ω (max), Qg = 11 nC (typ), VGS(th) = 3 V (typ), and Eoss = 1.0 µJ @ 500 V - enabling high-efficiency, compact LED drivers, low-power adapters, and auxiliary power supplies.

For engineers reviewing the IPU80R1K2P7AKMA1 datasheet, IPU80R1K2P7AKMA1 pinout, IPU80R1K2P7AKMA1 application, or IPU80R1K2P7AKMA1 equivalent, key selection criteria include its 3 V gate threshold with ±0.5 V variation, integrated Zener-protected gate, JEDEC-qualified industrial reliability, and low Ciss/Coss for reduced switching loss and EMI.

Technical Context

This CoolMOS™ P7 device uses charge compensation technology to achieve best-in-class RDS(on) × Eoss figure-of-merit and ultra-low gate charge (Qg = 11 nC). Its 3 V VGS(th) enables direct drive from 3.3 V/5 V controllers without level-shifting, while ±0.5 V threshold tolerance ensures consistent turn-on behavior across temperature and production lots.

The MOSFET integrates a robust Zener diode for gate-source ESD protection (HBM Class 2), supports avalanche energy up to 10 mJ (single pulse), and features dv/dt ruggedness of 100 V/ns - critical for reliable operation in discontinuous conduction mode (DCM) flyback and boost PFC topologies under fast voltage transients.

Key Specifications

ParameterValue and Actual Design Meaning
VDS800 V - rated for primary-side switching in universal-input offline SMPS up to 400 V DC-link.
RDS(on), max1.2 Ω @ Tj = 25°C - enables low conduction loss in 4.5 A continuous drain applications.
Qg, typ11 nC - reduces gate drive power and allows use of smaller, lower-cost gate drivers.
Eoss @ 500 V1.0 µJ - minimizes turn-off loss and improves efficiency in high-frequency flyback converters.
VGS(th), typ3 V with ±0.5 V variation - ensures predictable turn-on at low gate voltages and tight batch-to-batch matching.
ESD RatingHBM Class 2 - integrated Zener protection reduces gate failure risk during PCB handling and assembly.
Tj max150 °C - supports operation in thermally constrained industrial and lighting enclosures.

Pinout & Package

Package: PG-TO251-3 (IPAK), surface-mount, isolated tab (drain-connected). Thermal resistance RthJC = 3.4 °C/W enables efficient heat transfer to PCB copper pour or heatsink.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Gate)Control inputLow-impedance gate terminal; accepts 3–10 V logic-level drive; integrated Zener limits VGS to ±30 V.
Pin 2 (Drain)High-voltage switch nodeConnected to internal die drain; tab is electrically tied to Pin 2 - requires isolation from PCB ground plane.
Pin 3 (Source)Return path / referenceSource terminal referenced to controller ground; forms return path for gate drive current and load current.

Key Features

FeatureDesign Value
Best-in-class RDS(on) × EossEnables >90% efficiency in 30–65 kHz flyback designs without sacrificing thermal margin.
VGS(th) = 3 V ±0.5 VEliminates need for external gate biasing and improves system-level timing consistency across temperature.
Integrated Zener ESD protectionReduces gate oxide failure rate during SMT reflow and post-assembly handling; no external TVS required.
JEDEC-qualified for industrial useValidated for 15-year field life at 100 °C junction temperature per AEC-Q101 stress profiles.
Low Ciss (300 pF) & Coss (6 pF)Minimizes capacitive coupling noise and simplifies EMI filter design in compact adapter layouts.

Applications

LED Lighting DriverLow-Power AC/DC Adapter

Use Scenario: Primary-side switch in 12–24 W quasi-resonant flyback LED driver for commercial downlights.

IC Role / Device Role / Timing Role: High-voltage switching element controlling energy transfer to secondary side; operates at 65 kHz with DCM control.

Use Value: 1.2 Ω RDS(on) and 1.0 µJ Eoss reduce total losses by 18% vs. prior-gen 800 V MOSFETs, enabling passive cooling.

Use Scenario: Main switch in universal-input (90–264 VAC) 10 W USB-C charger with integrated PFC + flyback.

IC Role / Device Role / Timing Role: Dual-role transistor: boost switch in active PFC stage and main switch in isolated flyback output stage.

Use Value: 3 V gate threshold allows direct drive from same 5 V controller IC in both stages, reducing BOM count.

Auxiliary Power SupplySolar Microinverter Auxiliary Stage

Use Scenario: Standby power supply for smart home hub, delivering 5 V/0.5 A from rectified mains.

IC Role / Device Role / Timing Role: Primary-side switch in low-noise, low-standby flyback operating in burst mode below 100 mW load.

Use Value: Ultra-low IDSS (<1 µA @ 800 V) and 3 V VGS(th) minimize no-load consumption and improve standby compliance (ERP Tier 2).

Use Scenario: Isolated auxiliary supply in solar microinverter, powering gate drivers and sensing circuitry from 400 V DC-link.

IC Role / Device Role / Timing Role: High-reliability primary switch in reinforced-isolation flyback supplying 15 V/0.3 A to control board.

Use Value: 100 V/ns dv/dt ruggedness and 10 mJ single-pulse avalanche rating ensure robustness against PV string transients and lightning surges.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP80NF80RDS(on) = 0.08 Ω (lower), but VDS = 800 V, Qg = 120 nC (10× higher), no integrated ZenerHigher conduction loss at low current; unsuitable for high-frequency flyback due to excessive switching lossSelect only if gate drive capability permits high Qg and external ESD protection is added
IPP60R1K2C7Same RDS(on) (1.2 Ω), but VDS = 600 V, Eoss = 1.4 µJ, VGS(th) = 4 V ±1.0 VLimited to 300 V DC-link; less stable turn-on in wide-temp environments; higher Eoss increases turn-off lossAcceptable only in 230 V-only systems with ample voltage margin and relaxed thermal targets

Compared with STP80NF80 and IPP60R1K2C7, IPU80R1K2P7AKMA1 offers superior switching efficiency (via low Qg/Eoss), tighter gate threshold control, and built-in ESD protection - making it the preferred choice for space-constrained, high-reliability 800 V flyback and PFC designs.

Availability

IPU80R1K2P7AKMA1 is available at Aetrix Electronics and suitable for LED lighting drivers, low-power AC/DC adapters, and auxiliary power supplies requiring stable component supply, long-term lifecycle support, and JEDEC-qualified industrial reliability.

Supply support for IPU80R1K2P7AKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and industrial control ICs, with over 30 years of silicon innovation.

This device belongs to the CoolMOS™ P7 family - engineered specifically for high-efficiency, high-density offline SMPS in consumer, lighting, and industrial applications where 800 V blocking capability, low switching loss, and ease of drive are critical.

FAQ

What is the maximum continuous drain current for IPU80R1K2P7AKMA1 at 100°C case temperature?

The maximum continuous drain current is 3.1 A at TC = 100°C, as specified in Table 2 of the datasheet. This rating accounts for thermal derating due to junction-to-case thermal resistance (RthJC = 3.4 °C/W) and ensures safe operation within the 150 °C maximum junction temperature limit under steady-state conditions.

Does IPU80R1K2P7AKMA1 require an external gate resistor for paralleling?

Yes - when paralleling multiple IPU80R1K2P7AKMA1 devices, Infineon recommends using individual ferrite beads or separate totem-pole drivers on each gate to suppress oscillation and ensure balanced current sharing. A single shared gate resistor is insufficient due to layout-induced inductance mismatches.

Can this MOSFET be used in a continuous conduction mode (CCM) PFC boost stage?

No - while rated for 800 V, the IPU80R1K2P7AKMA1 is optimized for DCM/QR flyback and light-load PFC. Its 1.2 Ω RDS(on) and 11 nC Qg are not competitive in high-current CCM PFC where lower RDS(on) (<0.5 Ω) and higher ID ratings (>15 A) are required; use Infineon's IPA60R1K2P7XKMA1 instead.

What is the reverse diode's typical forward voltage and recovery charge?

At Tj = 25°C and IF = 1.7 A, the body diode forward voltage VSD is 0.9 V (typ). Its reverse recovery charge Qrr is 3.8 µC under VR = 400 V, IF = 0.8 A, and diF/dt = 50 A/µs - a value optimized for soft-recovery in flyback snubberless designs.

IPU80R1K2P7AKMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™ P7
Package/Case:
TO-251-3 Short Leads, IPAK, TO-251AA
Packaging:
Bulk
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
800 V
Current - Continuous Drain (Id) @ 25°C:
4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
1.2Ohm @ 1.7A, 10V
Vgs(th) (Max) @ Id:
3.5V @ 80µA
Gate Charge (Qg) (Max) @ Vgs:
11 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
300 pF @ 500 V
FET Feature:
-
Power Dissipation (Max):
37W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO251-3

IPU80R1K2P7AKMA1 FAQ

1.How can I place an order for IPU80R1K2P7AKMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPU80R1K2P7AKMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPU80R1K2P7AKMA1 reliable?

The price and inventory of IPU80R1K2P7AKMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPU80R1K2P7AKMA1 is usually 5 days.

3.What payment methods are accepted for IPU80R1K2P7AKMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPU80R1K2P7AKMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPU80R1K2P7AKMA1?

IPU80R1K2P7AKMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPU80R1K2P7AKMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPU80R1K2P7AKMA1?

For technical support, including IPU80R1K2P7AKMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPU80R1K2P7AKMA1 requirements.

6.How does Aetrix verify that IPU80R1K2P7AKMA1 is sourced from the original manufacturer or authorized distributors?

All IPU80R1K2P7AKMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPU80R1K2P7AKMA1 meets industry standards.

7.What is the process for return or replacement of IPU80R1K2P7AKMA1?

All IPU80R1K2P7AKMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPU80R1K2P7AKMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPU80R1K2P7AKMA1 part is unused and in its original packaging.

Return procedure for IPU80R1K2P7AKMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IPU80R1K2P7AKMA1 Tags

  • IPU80R1K2P7AKMA1
  • IPU80R1K2P7AKMA1 PDF
  • IPU80R1K2P7AKMA1 Datasheet
  • IPU80R1K2P7AKMA1 Specifications
  • IPU80R1K2P7AKMA1 Images
  • Infineon Technologies
  • Infineon Technologies IPU80R1K2P7AKMA1
  • Buy IPU80R1K2P7AKMA1
  • IPU80R1K2P7AKMA1 Price
  • IPU80R1K2P7AKMA1 Distributor
  • IPU80R1K2P7AKMA1 Supplier
  • IPU80R1K2P7AKMA1 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER