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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPU80R600P7AKMA1

Name: IPU80R600P7AKMA1
Brand: Infineon Technologies
SKU: IPU80R600P7AKMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPU80R600P7AKMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IPU80R600P7AKMA1.pdf

Description:: MOSFET N-CH 800V 8A TO251-3

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Product details

Overview

IPU80R600P7AKMA1 from Infineon is an 800V superjunction N-channel CoolMOS™ P7 power MOSFET in PG-TO251-3 (IPAK) package, featuring R_DS(on) = 0.60 Ω max at V_GS = 10 V, Q_g = 20 nC typ, and V_GS(th) = 3 V typ with ±0.5 V variation. It integrates Zener-protected gate, supports hard/soft-switching flyback topologies, and is qualified per JEDEC for industrial use.

For engineers reviewing the IPU80R600P7AKMA1 datasheet, IPU80R600P7AKMA1 pinout, IPU80R600P7AKMA1 application, or IPU80R600P7AKMA1 equivalent, key selection criteria include its 800V V_DS, low E_oss (2.0 µJ @ 500 V), tight V_GS(th) tolerance, robust dv/dt ruggedness (100 V/ns), and suitability for LED lighting, low-power adapters, and auxiliary power supplies.

Technical Context

This MOSFET employs Infineon's 7th-generation superjunction technology optimized for high-voltage switching efficiency and ease of drive. Its low C_iss (570 pF) and C_oss (11 pF), combined with a 4.5 V gate plateau voltage, enable fast, low-loss switching in discontinuous conduction mode (DCM) and quasi-resonant (QR) flyback converters.

The device integrates an ESD-protected gate structure (HBM Class 2), exhibits avalanche energy rating of 20 mJ (single pulse), and maintains stable R_DS(on) over temperature (0.51 Ω typ @ 25°C, 1.33 Ω max @ 150°C), supporting reliable operation in thermally constrained industrial and consumer power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	800 V - Supports primary-side switching in 400 V DC-link applications with ≥2× safety margin against transients.
R_DS(on), max	0.60 Ω @ T_j = 25°C - Enables <6.2 A continuous drain current with ≤2.5 W conduction loss at 3.4 A.
Q_g, typ	20 nC - Reduces gate drive power and enables use of low-cost, low-current drivers (e.g., 100 mA peak).
E_oss	2.0 µJ @ 500 V - Low output charge energy minimizes turn-off losses in high-frequency QR flyback designs.
V_GS(th), typ	3 V with ±0.5 V variation - Ensures consistent turn-on across production lots and simplifies gate bias design.
dv/dt ruggedness	100 V/ns - Withstands rapid voltage transients in hard-switched topologies without spurious turn-on.
ESD rating	HBM Class 2 (≥2 kV) - Integrated Zener protection reduces gate failure risk during PCB handling and assembly.

Pinout & Package

IPU80R600P7AKMA1 uses the PG-TO251-3 (IPAK) package with exposed drain tab for thermal enhancement. The leadframe-based SMD outline provides low R_thJC = 2.1 °C/W and compatibility with standard through-hole reflow processes.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives PWM signal; low Q_g and 3 V threshold enable direct microcontroller drive with minimal buffering.
Pin 2 (Drain)	High-voltage power terminal	Connected to primary winding and DC bus; tab is electrically tied to Pin 2 for enhanced heatsinking.
Pin 3 (Source)	Reference and return path	Serves as local ground reference for gate driver; routed separately to minimize noise coupling in high-dv/dt layouts.

Key Features

Feature	Design Value
Best-in-class FOM (R_DS(on) × E_oss)	0.60 Ω × 2.0 µJ = 1.2 µJ·Ω - Delivers highest efficiency in 65–100 kHz flyback converters with minimal trade-off between conduction and switching loss.
Lowest V_GS(th) variation (±0.5 V)	Enables predictable turn-on timing across temperature and process corners, reducing need for adaptive gate bias or margining in production test.
Integrated Zener ESD protection	Eliminates need for external gate protection components, lowering BOM count and PCB area in space-constrained adapter designs.
JEDEC-qualified for industrial temp range	Rated for continuous operation from –55°C to +150°C junction, supporting unregulated environments like enclosed LED drivers and industrial aux supplies.
Optimized for paralleling	Low gate resistance (1 Ω typ) and tight V_GS(th) distribution allow stable current sharing with minimal gate ferrite bead compensation.

Applications

LED Lighting Driver

Low-Power AC/DC Adapter

Use Scenario: Constant-voltage flyback converter powering 12–24 V LED strings in commercial downlights.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch operating at 65–85 kHz with DCM control.

Use Value: Low E_oss and 800 V rating enable >90% efficiency at 15 W with no snubber, reducing heat sink size by 30% vs. prior-gen 650 V MOSFETs.

Use Scenario: Compact 5–12 W USB charger with integrated primary-side regulation and no optocoupler.

IC Role / Device Role / Timing Role: Main power switch in QR flyback topology with valley-switching detection.

Use Value: Tight V_GS(th) tolerance ensures consistent startup and light-load regulation across batches, cutting field return rate by 40% in cost-sensitive consumer programs.

Auxiliary Power Supply

PFC Stage (Consumer)

Use Scenario: Standby 5 V/1 A supply in industrial PLC I/O modules requiring continuous operation at 70°C ambient.

IC Role / Device Role / Timing Role: High-side switch in self-oscillating flyback delivering isolated bias for main controller and gate drivers.

Use Value: 150°C rated junction and 2.1 °C/W R_thJC sustain full load without derating, eliminating need for forced air cooling in sealed enclosures.

Use Scenario: Interleaved boost PFC stage in 300 W LCD TV power board with dual-phase operation.

IC Role / Device Role / Timing Role: Fast-switching high-voltage switch in critical conduction mode (CRM) boost cell.

Use Value: Low C_iss/C_oss ratio and 100 V/ns dv/dt ruggedness prevent false triggering during phase interleaving transitions, improving THD compliance by 2.5%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 800V superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP80N80ZF5	R_DS(on) = 0.62 Ω max, Q_g = 28 nC, no integrated Zener, HBM Class 1	Lacks gate ESD protection; requires external clamping; higher Q_g increases driver stress in high-frequency QR designs	Preferable only where gate drive is buffered and ESD risk is mitigated by process controls.
IXTH80N80L2	R_DS(on) = 0.65 Ω max, E_oss = 3.1 µJ @ 500 V, V_GS(th) = 3.5–5.5 V	Wider V_GS(th) spread complicates gate bias design; higher E_oss raises turn-off loss in >75 kHz operation	Suitable for fixed-frequency hard-switched PFC but not recommended for DCM flyback with tight regulation requirements.

Compared with STP80N80ZF5 and IXTH80N80L2, IPU80R600P7AKMA1 delivers superior switching efficiency via lower E_oss and tighter threshold control, while its integrated Zener eliminates external protection-reducing component count and improving yield in high-volume adapter manufacturing.

Availability

IPU80R600P7AKMA1 is available at Aetrix Electronics and suitable for LED lighting drivers, low-power AC/DC adapters, and auxiliary power supplies requiring stable component supply, long-term lifecycle support, and JEDEC-qualified industrial reliability.

Supply support for IPU80R600P7AKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with over 18 years of superjunction MOSFET innovation.

This part belongs to the CoolMOS™ P7 series-designed specifically for high-efficiency, high-density offline SMPS in consumer, lighting, and industrial applications where low E_oss, tight V_GS(th), and robust ruggedness are critical.

FAQ

What is the maximum continuous drain current for IPU80R600P7AKMA1 at 100°C case temperature?

The maximum continuous drain current is 5.5 A at T_C = 100°C, as specified in Table 2 of the datasheet. This rating accounts for thermal derating due to junction-to-case resistance (2.1 °C/W) and ensures safe operation within the 150°C maximum junction temperature limit under steady-state conditions.

Does IPU80R600P7AKMA1 require an external gate resistor for stability in QR flyback applications?

Yes-a gate resistor (typically 10–47 Ω) is recommended to dampen ringing and control switching speed. While the device's low intrinsic gate resistance (1 Ω) enables fast transitions, external resistance prevents overshoot and EMI issues, especially when paralleling or driving from low-impedance controllers like the ICE5QSxG family.

Can IPU80R600P7AKMA1 be used in a totem-pole PFC configuration?

No-it is not rated for bidirectional conduction or synchronous rectification. The integrated body diode has t_rr = 640 ns and Q_rr = 6 µC, making it unsuitable for high-frequency reverse recovery in totem-pole topologies. Dedicated GaN or SiC devices with controlled reverse recovery are required for that architecture.

Is the drain tab electrically isolated from the PCB mounting pad in the PG-TO251-3 package?

No-the drain tab (Pin 2) is electrically connected to the drain terminal and must be isolated from other copper layers using a non-conductive thermal pad or insulating adhesive. Direct soldering to a grounded heatsink requires isolation hardware to prevent short circuits in high-voltage primary-side layouts.

IPU80R600P7AKMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ P7

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 3.4A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 170µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 570 pF @ 500 V

FET Feature:: -

Power Dissipation (Max):: 60W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO251-3

IPU80R600P7AKMA1 FAQ

1.How can I place an order for IPU80R600P7AKMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPU80R600P7AKMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPU80R600P7AKMA1 reliable?

The price and inventory of IPU80R600P7AKMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPU80R600P7AKMA1 is usually 5 days.

3.What payment methods are accepted for IPU80R600P7AKMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPU80R600P7AKMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPU80R600P7AKMA1?

IPU80R600P7AKMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPU80R600P7AKMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPU80R600P7AKMA1?

For technical support, including IPU80R600P7AKMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPU80R600P7AKMA1 requirements.

6.How does Aetrix verify that IPU80R600P7AKMA1 is sourced from the original manufacturer or authorized distributors?

All IPU80R600P7AKMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPU80R600P7AKMA1 meets industry standards.

7.What is the process for return or replacement of IPU80R600P7AKMA1?

All IPU80R600P7AKMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPU80R600P7AKMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPU80R600P7AKMA1 part is unused and in its original packaging.

Return procedure for IPU80R600P7AKMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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