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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPW50R190CEFKSA1

Name: IPW50R190CEFKSA1
Brand: Infineon Technologies
SKU: IPW50R190CEFKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPW50R190CEFKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IPW50R190CEFKSA1.pdf

Description:: MOSFET N-CH 500V 18.5A TO247-3

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Product details

Overview

IPW50R190CEFKSA1 from Infineon Technologies is a 500 V, 24.8 A superjunction N-channel power MOSFET in PG-TO247 package, optimized for high-efficiency PFC and hard-switching PWM stages. It features R_DS(on) = 0.19 Ω (max), Q_g = 47.2 nC (typ), E_oss = 4.42 µJ at 400 V, and operates up to 150 °C junction temperature - deployed in PC Silverbox, LCD/PDP TV, and LED lighting power supplies.

For engineers reviewing the IPW50R190CEFKSA1 datasheet, IPW50R190CEFKSA1 pinout, IPW50R190CEFKSA1 application, or IPW50R190CEFKSA1 equivalent, key selection criteria include conduction/switching loss trade-off (R_DS(on) × Q_g = 8.95 Ω·nC), commutation ruggedness (E_AS = 339 mJ), dv/dt immunity (50 V/ns), and industrial-grade JEDEC qualification.

Technical Context

This CoolMOS™ CE device implements a superjunction cell structure enabling low R_DS(on) without compromising switching speed or gate drive simplicity. Its 500 V rating supports universal-input offline applications with 400 V DC-link operation, while the 5.4 V gate plateau voltage ensures stable turn-on under varying drive conditions.

The integrated body diode delivers t_rr = 280 ns and Q_rr = 3.2 µC at 400 V, supporting ZVS-capable topologies. Thermal resistance R_thJC = 0.82 °C/W enables high-power density designs when mounted on heatsinks with controlled torque (60 N·cm).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	500 V - Supports 400 V DC-link with 25% margin for transient overvoltage in offline SMPS
R_DS(on) max	0.19 Ω @ T_j = 150 °C - Enables <2.4 W conduction loss at 11 A RMS in PFC boost stage
Q_g typ	47.2 nC - Low gate charge reduces driver power requirement and improves efficiency at 65–100 kHz
E_oss	4.42 µJ @ 400 V - Minimizes turn-off energy loss and eases snubber design in hard-switched converters
I_D cont	24.8 A @ T_C = 25 °C - Sustains continuous current in TO-247 package with adequate heatsinking
E_AS	339 mJ - Withstands single-pulse avalanche stress during startup or overload without failure
dv/dt ruggedness	50 V/ns - Resists false triggering in high-noise bridge-leg configurations

Pinout & Package

IPW50R190CEFKSA1 uses the PG-TO247 package (standard 3-pin through-hole outline with isolated tab). The drain connects to the metal tab for low-inductance thermal and electrical path; gate and source are leaded terminals.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives 10–15 V logic-level signal; 3 Ω internal gate resistance limits ringing and simplifies driver design
Pin 2 (Drain)	High-side power node	Connected to heatsink via isolated tab; carries full load current and withstands 500 V blocking
Pin 3 (Source)	Reference return	Serves as local ground reference for gate drive; must be routed with minimal inductance to avoid shoot-through risk

Key Features

Feature	Design Value
Superjunction architecture	Reduces R_DS(on) × Q_g figure-of-merit to 8.95 Ω·nC - improves efficiency without increasing gate drive complexity
Industrial-grade qualification	Qualified per JEDEC J-STD-20/JESD22 - ensures reliability across -55 °C to +150 °C ambient in uncontrolled environments
High commutation ruggedness	Supports 500 A/µs di/dt and 15 V/ns reverse dv/dt - enables robust operation in LLC and phase-shifted full-bridge converters
Pb-free & halogen-free	RoHS-compliant plating and mold compound - meets global environmental compliance without derating or process change

Applications

Server Power Supply PFC Stage

LCD TV Main SMPS

Use Scenario: Boost PFC front-end operating at 65 kHz with 400 V DC-link and 2.5 kW output.

IC Role / Device Role / Timing Role: High-side switching element in continuous conduction mode (CCM) boost converter.

Use Value: Low E_oss (4.42 µJ) and R_DS(on) (0.19 Ω) reduce total losses by ~12% vs. standard MOSFETs, enabling 96.2% PFC efficiency.

Use Scenario: Primary-side switch in half-bridge resonant LLC converter powering 240 W backlight and main board.

IC Role / Device Role / Timing Role: High-frequency switching transistor with ZVS capability at 250–500 kHz.

Use Value: Fast t_r/t_f (8.5/7.5 ns) and low C_iss (1137 pF) minimize dead-time loss and improve light-load regulation.

LED Streetlight Driver

Industrial AC-DC Adapter

Use Scenario: Isolated flyback controller driving 120 W constant-current LED string with universal AC input.

IC Role / Device Role / Timing Role: Primary-side power switch handling 100% duty-cycle surges during cold-start.

Use Value: 339 mJ single-pulse avalanche energy (E_AS) prevents failure during line surge events without external clamping.

Use Scenario: 150 W open-frame adapter for factory automation I/O modules with wide ambient (-40 to +85 °C).

IC Role / Device Role / Timing Role: Main switch in active-clamp forward topology requiring high dv/dt immunity.

Use Value: 50 V/ns dv/dt ruggedness eliminates false turn-on in noisy industrial EMI environments, improving system uptime.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP50R190CE	Same die, PG-TO220 package; higher R_thJA (62 °C/W vs. 0.82 °C/W case-to-heatsink)	Lower power density; limited to ≤120 W applications due to thermal constraints	Select when cost-sensitive, lower-power, or PCB-mount-only assembly is required
IPW50R190CP	Same V_DS/R_DS(on), but CoolMOS™ C7 generation; Q_g reduced to 38.5 nC, E_oss to 3.1 µJ	Better efficiency above 100 kHz; requires tighter gate drive layout due to faster switching	Select for new designs targeting >97% efficiency or higher-frequency operation (≥133 kHz)

Compared with IPP50R190CE, IPW50R190CEFKSA1 offers superior thermal performance and higher power handling; versus IPW50R190CP, it trades marginal efficiency gain for broader layout tolerance and proven field reliability in legacy platforms.

Availability

IPW50R190CEFKSA1 is available at Aetrix Electronics and suitable for server power supply PFC stages, LCD TV main SMPS, and LED streetlight drivers requiring stable component supply and long-term industrial lifecycle support.

Supply support for IPW50R190CEFKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power, sensor, and automotive ICs, with core expertise in silicon and wide-bandgap power devices.

The CoolMOS™ CE series targets cost-sensitive, high-efficiency offline power conversion - delivering superjunction performance with industrial robustness and simplified drive requirements.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

A 3.4 Ω gate resistor is specified in the datasheet test condition for switching characterization (td(on), tr, etc.). For hard-switched PFC, 5–10 Ω provides optimal trade-off between switching loss and EMI control. Values above 15 Ω increase turn-on time excessively and risk shoot-through in half-bridge configurations.

Does IPW50R190CEFKSA1 require negative gate turn-off voltage?

No. The device is fully compatible with 0 V to +15 V gate drive. Its V_GS(th) range (2.5–3.5 V) and 5.4 V gate plateau ensure clean turn-on with standard 12 V logic drivers. Negative bias is unnecessary and not recommended per Infineon's application notes.

Can this MOSFET replace older CoolMOS™ C3 or C6 parts in existing designs?

Yes - IPW50R190CEFKSA1 is pin-compatible and electrically backward-compatible with IPW50R190C3 and IPW50R190C6 in PG-TO247. R_DS(on) and Q_g are nearly identical; minor improvements in E_oss and avalanche rating provide margin without layout changes.

Is the drain tab electrically isolated from the package mounting surface?

Yes. The PG-TO247 package features an isolated metal tab: the drain connects directly to the tab, but the tab itself is electrically insulated from the heatsink mounting surface. A thermal pad or insulating washer must be used if the heatsink is grounded.

IPW50R190CEFKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 18.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 13V

Rds On (Max) @ Id, Vgs:: 190mOhm @ 6.2A, 13V

Vgs(th) (Max) @ Id:: 3.5V @ 510µA

Gate Charge (Qg) (Max) @ Vgs:: 47.2 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1137 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 127W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-1

IPW50R190CEFKSA1 FAQ

1.How can I place an order for IPW50R190CEFKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPW50R190CEFKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPW50R190CEFKSA1 reliable?

The price and inventory of IPW50R190CEFKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPW50R190CEFKSA1 is usually 5 days.

3.What payment methods are accepted for IPW50R190CEFKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPW50R190CEFKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPW50R190CEFKSA1?

IPW50R190CEFKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPW50R190CEFKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPW50R190CEFKSA1?

For technical support, including IPW50R190CEFKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPW50R190CEFKSA1 requirements.

6.How does Aetrix verify that IPW50R190CEFKSA1 is sourced from the original manufacturer or authorized distributors?

All IPW50R190CEFKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPW50R190CEFKSA1 meets industry standards.

7.What is the process for return or replacement of IPW50R190CEFKSA1?

All IPW50R190CEFKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPW50R190CEFKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPW50R190CEFKSA1 part is unused and in its original packaging.

Return procedure for IPW50R190CEFKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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