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Infineon Technologies IPW50R250CPFKSA1

Part No.:
IPW50R250CPFKSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-247-3
Datasheet:
AetrixIPW50R250CPFKSA1.pdf
Description:
MOSFET N-CH 500V 13A TO247-3
Quantity:
Payment:
Payment
Shipping:
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Inventory:6,880

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Product details

Overview

IPW50R250CPFKSA1 from Infineon Technologies is a 500 V, 14 A, 250 mΩ CoolMOS™ C7 superjunction power MOSFET in TO-247-3 package, optimized for high-efficiency hard-switched and resonant SMPS topologies including LLC and PFC stages. It delivers low conduction and switching losses with 100% avalanche-rated ruggedness and enhanced body diode softness for reliable operation in server, telecom, and industrial AC-DC power supplies.

For engineers reviewing the IPW50R250CPFKSA1 datasheet, IPW50R250CPFKSA1 pinout, IPW50R250CPFKSA1 application, or IPW50R250CPFKSA1 equivalent, key selection criteria include RDS(on) at 10 V gate drive, Eoss and Qg values for ZVS/ZCS design, avalanche energy rating (EAS), thermal resistance (RthJC), and body diode reverse recovery charge (Qrr) in high-frequency PFC circuits.

Technical Context

This device implements CoolMOS™ C7 technology with optimized charge balance and trench-gate structure to reduce both static and dynamic losses. Its 500 V blocking voltage supports universal input (85–265 VAC) front-end designs, while the 250 mΩ RDS(on) at VGS = 10 V enables high-power density in 1–3 kW systems.

The MOSFET features a fast, soft-recovery body diode (Qrr = 190 nC, trr = 210 ns) and low gate charge (Qg = 42 nC, Qgd = 11 nC), enabling efficient operation in continuous conduction mode (CCM) PFC and asymmetric half-bridge LLC converters without external snubbers.

Key Specifications

ParameterValue and Actual Design Meaning
VDS500 V - Supports universal AC input rectified bus up to 400 VDC with margin for transients and ripple.
RDS(on) max250 mΩ @ VGS = 10 V - Enables low conduction loss in 14 A continuous drain current applications.
ID cont14 A @ TC = 25 °C - Sustains full load in compact heatsinked 1.5–2 kW power stages.
Eoss35 nJ @ VDS = 400 V - Reduces turn-on switching loss in ZVS LLC resonant converters.
Qg42 nC - Allows use with standard gate drivers (e.g., 1EDN7512B) without excessive drive power.
Qrr190 nC - Minimizes diode-induced voltage spikes and EMI in CCM PFC boost stages.
RthJC0.5 K/W - Enables thermal management with standard TO-247 mounting and 20–30 cm² copper area.

Pinout & Package

IPW50R250CPFKSA1 is housed in a standard TO-247-3 plastic package with isolated tab, rated for 30 A peak solder temperature and RoHS-compliant lead-free finish.

Pin/TerminalCircuit RoleDesign Meaning
Drain (D)Main high-side power terminalConnected to primary bus (e.g., 400 V DC link); electrically tied to metal tab for thermal path.
Gate (G)Control inputReceives PWM signal; requires 10–15 V drive with <10 Ω series resistance to control dV/dt and ringing.
Source (S)Reference node for gate drive and current sensingCommon return for gate driver supply and shunt-based current monitoring; must be low-inductance layout.

Key Features

FeatureDesign Value
Enhanced body diode softnessQrr/Irr ratio < 1.2 μs/A - Reduces voltage overshoot and EMI during diode commutation in PFC.
100% rated avalanche capabilityEAS = 210 mJ @ TC = 25 °C - Eliminates need for external clamping in transient-prone industrial mains inputs.
Low effective output capacitanceCoss,eff = 190 pF @ 400 V - Improves ZVS behavior and reduces dead-time sensitivity in resonant topologies.
Optimized gate charge profileQgd/Qg = 26% - Balances switching speed and Miller immunity for stable hard-switching at >100 kHz.

Applications

Server Power SupplyTelecom Rectifier

Use Scenario: 2 kW CRPS-compliant ATX12VO or 3+1 phase interleaved PFC stage.

IC Role / Device Role / Timing Role: Main switch in continuous conduction mode (CCM) boost converter operating at 65–100 kHz.

Use Value: 250 mΩ RDS(on) and 190 nC Qrr enable >98.5% efficiency at full load while meeting EN 61000-3-2 Class A harmonic limits.

Use Scenario: 3 kW -48 V telecom rectifier with dual-phase interleaved PFC + LLC resonant DC-DC.

IC Role / Device Role / Timing Role: High-side switch in asymmetric half-bridge LLC primary side, switching at 250–500 kHz.

Use Value: Low Eoss (35 nJ) and soft body diode ensure zero-voltage switching across line/load range without auxiliary circuits.

Industrial Motor Drive InverterEV Charging Station PFC

Use Scenario: 5 kW three-phase inverter input stage with active front-end (AFE) PFC.

IC Role / Device Role / Timing Role: Upper-leg switch in three-level NPC topology operating at 16 kHz with SiC gate driver.

Use Value: 500 V rating and 210 mJ avalanche energy provide robustness against IGBT desaturation faults and bus overvoltage events.

Use Scenario: 11 kW single-phase OBC PFC stage compliant with IEC 61851-23.

IC Role / Device Role / Timing Role: Boost switch in critical conduction mode (CrCM) or transition-mode (TM) PFC controller IC interface.

Use Value: Fast, soft body diode (trr = 210 ns) prevents shoot-through risk and reduces EMI filter size by >30% vs. standard SJ-MOSFETs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP50N50F3500 V, 50 A, RDS(on) = 100 mΩ - higher current rating but higher Qg (120 nC) and no soft diode.Suitable for lower-frequency (<50 kHz), high-current linear PFC where diode softness is not critical.Select when higher ID headroom is needed and gate drive strength allows higher Qg.
IXFH50N50P500 V, 50 A, RDS(on) = 110 mΩ - planar MOSFET with slower body diode (Qrr = 420 nC) and no avalanche rating.Better for cost-sensitive industrial inverters where ruggedness and EMI are secondary to BOM cost.Choose only if system-level testing confirms adequate diode recovery and transient immunity without added snubbers.

Compared with STP50N50F3 and IXFH50N50P, IPW50R250CPFKSA1 provides superior high-frequency efficiency and reliability in resonant and CCM PFC due to its lower Eoss, soft diode, and guaranteed avalanche performance - making it optimal for space-constrained, high-efficiency server and telecom power supplies.

Availability

IPW50R250CPFKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial motor drive inverters requiring stable component supply and long-term lifecycle support.

Supply support for IPW50R250CPFKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and security solutions, with global R&D and wafer fabrication facilities.

This part belongs to the CoolMOS™ C7 family, engineered specifically for high-efficiency, high-density AC-DC conversion in datacenter, telecom, and industrial power systems where low RDS(on), low Eoss, and soft body diode recovery are essential.

FAQ

What is the maximum recommended gate-source voltage for IPW50R250CPFKSA1?

The absolute maximum VGS is ±30 V, but the device is characterized and optimized for operation between 10 V and 15 V. Driving above 15 V yields diminishing RDS(on) improvement while increasing gate oxide stress and risk of spurious turn-on during high dV/dt events. For robust operation, 12–15 V is recommended with active Miller clamp or negative turn-off bias.

Does IPW50R250CPFKSA1 require a gate resistor, and what value is typical?

Yes - a gate resistor is required to control switching speed, suppress oscillation, and limit peak gate current. A value between 5 Ω and 15 Ω is typical for 65–100 kHz PFC applications. Lower values (5–8 Ω) suit ZVS LLC where fast turn-on is beneficial; higher values (10–15 Ω) reduce EMI in CCM PFC. Layout parasitics must be minimized regardless of RG choice.

Can IPW50R250CPFKSA1 replace older CoolMOS™ C3 or C6 devices in existing designs?

Yes - it is a direct drop-in replacement for IPW50R280C6 and IPW50R330C3 in most cases due to identical TO-247-3 footprint, pinout, and VDS/ID ratings. However, its lower RDS(on) and Qg may increase dV/dt stress on gate drivers; verify driver capability and add minor gate damping if ringing occurs. Thermal design remains compatible.

Is the metal tab of IPW50R250CPFKSA1 electrically connected to the drain?

Yes - the TO-247-3 package's metal tab is internally connected to the drain terminal. This requires electrical isolation from heatsinks using insulating pads or ceramic washers unless the heatsink is floating or referenced to the high-side bus. Thermal interface material must maintain dielectric strength ≥2 kV RMS to meet safety standards.

IPW50R250CPFKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
500 V
Current - Continuous Drain (Id) @ 25°C:
13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
250mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id:
3.5V @ 520µA
Gate Charge (Qg) (Max) @ Vgs:
36 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1420 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
114W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO247-3-1

IPW50R250CPFKSA1 FAQ

1.How can I place an order for IPW50R250CPFKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPW50R250CPFKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPW50R250CPFKSA1 reliable?

The price and inventory of IPW50R250CPFKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPW50R250CPFKSA1 is usually 5 days.

3.What payment methods are accepted for IPW50R250CPFKSA1?

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IPW50R250CPFKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPW50R250CPFKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPW50R250CPFKSA1?

For technical support, including IPW50R250CPFKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPW50R250CPFKSA1 requirements.

6.How does Aetrix verify that IPW50R250CPFKSA1 is sourced from the original manufacturer or authorized distributors?

All IPW50R250CPFKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPW50R250CPFKSA1 meets industry standards.

7.What is the process for return or replacement of IPW50R250CPFKSA1?

All IPW50R250CPFKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPW50R250CPFKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPW50R250CPFKSA1 part is unused and in its original packaging.

Return procedure for IPW50R250CPFKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IPW50R250CPFKSA1 Tags

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