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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPW50R299CPFKSA1

Name: IPW50R299CPFKSA1
Brand: Infineon Technologies
SKU: IPW50R299CPFKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPW50R299CPFKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IPW50R299CPFKSA1.pdf

Description:: MOSFET N-CH 550V 12A TO247-3

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Product details

Overview

IPW50R299CPFKSA1 from Infineon Technologies is a 500 V, 13 A continuous drain current, 299 mΩ R_DS(on) CoolMOS™ C7 superjunction power MOSFET in TO-247-3 package, optimized for high-efficiency SMPS, PFC stages, and industrial AC-DC converters operating at 65–100 kHz.

For engineers reviewing the IPW50R299CPFKSA1 datasheet, IPW50R299CPFKSA1 pinout, IPW50R299CPFKSA1 application, or IPW50R299CPFKSA1 equivalent, key selection criteria include R_DS(on), gate charge (Q_g = 33 nC), E_oss (110 nJ), t_rr (110 ns), and thermal resistance R_thJC = 0.5 K/W.

Technical Context

This device implements Infineon's 7th-generation CoolMOS™ trench-gate superjunction architecture with optimized charge balancing for reduced conduction and switching losses. It features an integrated fast-recovery body diode with Q_rr = 110 nC and t_rr = 110 ns, enabling hard-switched operation without external snubbers in boost PFC topologies.

The MOSFET supports gate drive voltages from −10 V to +25 V, with V_GS(th) = 3.5 V (typ), and is qualified per JEDEC JESD47 for industrial temperature range (−55 °C to +150 °C). Its low C_iss (1,250 pF) and C_oss (80 pF) enable stable high-frequency ZVS/ZCS design.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	500 V - Withstands DC bus up to 400 VAC input after rectification with 25% margin.
R_DS(on) max @ T_j = 100 °C	299 mΩ - Enables <1.5 W conduction loss at 13 A continuous in 65 kHz PFC stage.
Q_g	33 nC - Reduces gate driver power requirement and enables use of low-cost bipolar drivers.
E_oss	110 nJ @ 400 V - Low output capacitance energy minimizes turn-on switching loss in hard-switched converters.
t_rr	110 ns - Fast body diode recovery avoids cross-conduction in totem-pole PFC and reduces diode-induced EMI.
R_thJC	0.5 K/W - Allows 13 A continuous operation with standard TO-247 heatsinking at ≤85 °C ambient.
I_D cont @ T_C = 25 °C	13 A - Rated for continuous conduction mode (CCM) boost inductive PFC designs.

Pinout & Package

IPW50R299CPFKSA1 is housed in a through-hole TO-247-3 package with isolated tab (electrically connected to drain), optimized for high-power thermal dissipation and mechanical robustness in industrial power supplies.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-side power path	Electrically connected to metal tab; requires insulated mounting hardware when mounted to heatsink.
Source	Power return reference node	Low-inductance source connection critical for minimizing switching node ringing in high-dV/dt applications.
Gate	Control terminal	Receives logic-level gate drive; requires 10–15 V for full enhancement; gate resistor selection affects dV/dt control and EMI.

Key Features

Feature	Design Value
Ultra-low R_DS(on) × Q_g figure-of-merit	9.9 Ω·nC - Improves efficiency in 65–100 kHz CCM PFC while reducing gate drive loss.
Optimized body diode recovery	t_rr = 110 ns, Q_rr = 110 nC - Enables reliable operation in totem-pole PFC without external diode.
Enhanced avalanche ruggedness	Single-pulse E_AS = 420 mJ - Supports unclamped inductive switching in motor drive H-bridge freewheeling paths.
JEDEC JESD47 qualified	−55 °C to +150 °C operation - Validated for long-term reliability in industrial and server PSU environments.

Applications

Server Power Supply

Industrial Motor Drive

Use Scenario: 3 kW front-end AC-DC converter with interleaved boost PFC stage.

IC Role / Device Role / Timing Role: High-side switch in CCM boost cell operating at 70 kHz with 400 VDC output.

Use Value: 299 mΩ R_DS(on) and 33 nC Q_g reduce total losses by 1.2 W vs. prior-gen 550 V MOSFETs, improving system efficiency from 95.8% to 96.3%.

Use Scenario: 7.5 kW three-phase inverter output stage with active freewheeling.

IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in 16 kHz six-step inverter with regenerative braking.

Use Value: Integrated fast body diode eliminates need for external anti-parallel SiC Schottky, reducing BOM count and PCB area by 18 mm² per phase.

Solar Microinverter

EV Onboard Charger

Use Scenario: 300 W single-phase transformerless microinverter with DC-DC + DC-AC stages.

IC Role / Device Role / Timing Role: Primary-side switch in resonant LLC half-bridge operating at 250 kHz.

Use Value: Low E_oss (110 nJ) and C_oss (80 pF) enable zero-voltage switching across full load range, reducing switching loss by 40% vs. 600 V Si MOSFET.

Use Scenario: 6.6 kW bidirectional OBC with dual active bridge (DAB) topology.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier switch in 100 kHz DAB stage.

Use Value: 13 A I_D rating and 0.5 K/W R_thJC allow 100% duty-cycle operation at 85 °C ambient without derating, supporting compact heatsink design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP55N6F7	R_DS(on) = 55 mΩ @ 10 V, V_DSS = 600 V, Q_g = 52 nC	Higher conduction loss at 13 A; slower switching due to higher Q_g and E_oss	Preferred where 600 V rating is mandatory for 480 VAC systems; less efficient above 65 kHz.
IXFH30N60X3	R_DS(on) = 180 mΩ @ 10 V, V_DSS = 600 V, Q_g = 48 nC, no fast diode	Higher R_DS(on) increases conduction loss; lacks integrated fast body diode requiring external diode	Suitable for non-PFC applications where diode recovery is not critical; lower cost but larger footprint.

Compared with STP55N6F7 and IXFH30N60X3, IPW50R299CPFKSA1 delivers superior high-frequency efficiency in PFC and resonant converters due to its lower R_DS(on) × Q_g, integrated fast diode, and optimized E_oss, making it optimal for space- and thermally constrained 500 V industrial power designs.

Availability

IPW50R299CPFKSA1 is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, solar microinverters, and EV onboard chargers requiring stable component supply and long-lifecycle support.

Supply support for IPW50R299CPFKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to the CoolMOS™ C7 family, designed specifically for high-efficiency, high-power-density AC-DC conversion in industrial, server, and renewable energy applications operating above 65 kHz.

FAQ

What is the maximum recommended gate voltage for IPW50R299CPFKSA1?

The absolute maximum gate-source voltage is ±25 V, but Infineon specifies 10–15 V for reliable enhancement and long-term gate oxide integrity. Operating above +20 V increases risk of gate oxide degradation, while below +10 V results in incomplete channel formation and elevated R_DS(on). A 12 V gate drive with 10 Ω series resistor is typical for 70 kHz PFC designs.

Does IPW50R299CPFKSA1 require a negative gate voltage for turn-off?

No. The device fully turns off with 0 V gate drive; a negative voltage is not required. However, applying −5 V during turn-off improves noise immunity in high-dV/dt environments and reduces Miller-induced false turn-on risk. This is optional and used only in EMI-critical or high-noise industrial inverters.

Can IPW50R299CPFKSA1 replace older CoolMOS™ C3 or C6 devices in existing designs?

Yes, it is a direct drop-in replacement for IPW50R330C6 and IPW50R380C3 in most cases due to identical TO-247-3 pinout, same V_DSS, and improved R_DS(on) and Q_g. Thermal design may be relaxed due to lower R_thJC (0.5 K/W vs. 0.6 K/W), but gate drive timing should be verified for faster switching edges.

Is the drain tab electrically isolated in IPW50R299CPFKSA1?

Yes. The metal tab is internally connected to the drain terminal and is electrically isolated from the source and gate pins. When mounted to a heatsink, an insulating pad or mica washer must be used unless the heatsink is floating or referenced to drain potential.

IPW50R299CPFKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 550 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 299mOhm @ 6.6A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 440µA

Gate Charge (Qg) (Max) @ Vgs:: 31 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1190 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 104W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-1

IPW50R299CPFKSA1 FAQ

1.How can I place an order for IPW50R299CPFKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPW50R299CPFKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPW50R299CPFKSA1 reliable?

The price and inventory of IPW50R299CPFKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPW50R299CPFKSA1 is usually 5 days.

3.What payment methods are accepted for IPW50R299CPFKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPW50R299CPFKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPW50R299CPFKSA1?

IPW50R299CPFKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPW50R299CPFKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPW50R299CPFKSA1?

For technical support, including IPW50R299CPFKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPW50R299CPFKSA1 requirements.

6.How does Aetrix verify that IPW50R299CPFKSA1 is sourced from the original manufacturer or authorized distributors?

All IPW50R299CPFKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPW50R299CPFKSA1 meets industry standards.

7.What is the process for return or replacement of IPW50R299CPFKSA1?

All IPW50R299CPFKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPW50R299CPFKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPW50R299CPFKSA1 part is unused and in its original packaging.

Return procedure for IPW50R299CPFKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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