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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPW60R017C7XKSA1

Name: IPW60R017C7XKSA1
Brand: Infineon Technologies
SKU: IPW60R017C7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPW60R017C7XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IPW60R017C7XKSA1.pdf

Description:: HIGH POWER_NEW

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPW60R017C7XKSA1 from Infineon Technologies is a 600 V, 17 mΩ R_DS(on) superjunction MOSFET in TO-247 package with drain pin 2, gate pin 1, and source pin 3. It delivers 129 A continuous current at T_j < 150°C, 240 nC total gate charge, and 30 µJ E_oss @ 400 V-optimized for high-efficiency PFC and LLC resonant converters in server and telecom power supplies.

For engineers reviewing the IPW60R017C7XKSA1 datasheet, IPW60R017C7XKSA1 pinout, IPW60R017C7XKSA1 application, or IPW60R017C7XKSA1 equivalent, key selection criteria include its 120 V/ns dv/dt ruggedness, industry-grade JEDEC qualification, low R_DS(on) × E_oss figure-of-merit, and suitability for hard/soft-switching topologies requiring high power density and thermal robustness.

Technical Context

This CoolMOS™ C7 device implements a superjunction architecture enabling sub-1 Ω·mm² R_DS(on)×A performance. Its optimized charge distribution reduces both conduction and switching losses, with Q_gd/Q_g ratio of ~35% supporting fast, controllable turn-off and reduced Miller-induced oscillation risk.

The MOSFET features a body diode with 630 ns reverse recovery time and 200 A/µs di/dt capability, validated for synchronous rectification and bidirectional energy transfer in resonant stages. Thermal resistance R_thJC is 0.28 °C/W, enabling high-power operation with standard heatsinking.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V maximum blocking voltage-supports 400 V DC bus designs with 50 V margin for transient overvoltage in industrial SMPS.
R_DS(on), max	17 mΩ at V_GS = 10 V, T_j = 150°C-enables low conduction loss in high-current PFC boost stages up to 129 A continuous.
Q_g, typ	240 nC-low gate drive energy requirement supports efficient 100–300 kHz switching in LLC half-bridge primary side.
E_oss @ 400 V	30 µJ-reduces turn-on loss in hard-switched applications and enables higher frequency operation without efficiency penalty.
dv/dt ruggedness	120 V/ns-ensures reliable operation under fast voltage transients in high-dV/dt environments like phase-shifted full-bridge converters.
I_D,pulse	495 A peak pulsed current-supports short-term overload conditions during startup or fault events in UPS and solar inverters.
T_j,max	150°C junction temperature rating-allows sustained operation in thermally constrained server PSU modules with active cooling.

Pinout & Package

Package: PG-TO247 (TO-247), thermally enhanced plastic case with isolated tab (drain-connected). Mounting torque: 60 N·cm for M3/M3.5 screws.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Low-impedance input accepting 13 V logic-level gate drive; RG = 0.45 Ω supports precise timing control and minimizes ringing.
Pin 2 (Drain)	High-voltage output terminal	Connected to internal die backside (tab); requires insulated mounting when used in non-isolated topologies.
Pin 3 (Source)	Reference node for gate drive and current sensing	Provides low-inductance return path for gate loop and enables accurate high-side current monitoring via Kelvin connection.

Key Features

Feature	Design Value
Superjunction R_DS(on) × A < 1 Ω·mm²	Enables smaller heatsink footprint vs. prior-gen 600 V MOSFETs while maintaining same thermal derating curve.
Body diode dI/dt = 200 A/µs	Supports fast commutation in ZVS/ZCS circuits without tail current-induced shoot-through risk.
JEDEC industrial qualification	Validated per J-STD-20 and JESD22-ensures reliability across extended temperature cycling and humidity bias stress.
Low E_oss and Q_g	Reduces total switching loss by >25% vs. C6 generation at 200 kHz, directly improving 80 PLUS Titanium efficiency targets.
120 V/ns dv/dt immunity	Eliminates need for external snubbers in high-frequency PFC designs, simplifying layout and reducing BOM count.

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: 3 kW front-end PFC stage operating at 100 kHz with interleaved boost topology.

IC Role / Device Role / Timing Role: High-side switching element in boost converter; handles 129 A continuous conduction mode current.

Use Value: 17 mΩ R_DS(on) and 30 µJ E_oss reduce conduction + switching losses to meet 96.5% efficiency at 50% load.

Use Scenario: 2 kW LLC resonant DC-DC converter for 48 V intermediate bus in 5G base station power system.

IC Role / Device Role / Timing Role: Primary-side half-bridge switch; operates in soft-switching region with zero-voltage turn-on.

Use Value: 240 nC Q_g and 120 V/ns dv/dt ruggedness enable stable 300 kHz operation without gate oscillation or false triggering.

Solar Inverter

UPS System

Use Scenario: MPPT DC-DC stage in string inverter handling 1000 V PV input with 20 kHz hard-switched buck-boost.

IC Role / Device Role / Timing Role: Main power switch in high-voltage buck-boost cell; rated for 600 V blocking with 150°C T_j.

Use Value: 650 V V_DS@T_j,max provides 50 V safety margin over 600 V nominal rating, ensuring long-term reliability under grid surge conditions.

Use Scenario: Online double-conversion UPS with 10 kVA capacity and battery backup; uses two-phase interleaved PFC + IGBT inverter.

IC Role / Device Role / Timing Role: Critical PFC switch handling 495 A pulsed current during line sag recovery and overload transients.

Use Value: 495 A I_D,pulse and 582 mJ single-pulse avalanche energy prevent failure during 200 ms brownout events with full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW62N60M2	R_DS(on) = 22 mΩ, Q_g = 225 nC, E_oss = 42 µJ @ 400 V	Higher conduction loss; lower dv/dt rating (80 V/ns) limits usable frequency in high-dV/dt layouts.	Preferred where cost sensitivity outweighs 3–5% efficiency gain and thermal margin is ample.
IXFH60N60X3	R_DS(on) = 19 mΩ, Q_g = 265 nC, E_oss = 35 µJ @ 400 V, no JEDEC industrial qualification	Higher gate charge increases driver loss; lacks formal industrial reliability certification for telecom/server deployment.	Acceptable for industrial motor drives but not recommended for mission-critical data center power systems.

Compared with STW62N60M2 and IXFH60N60X3, IPW60R017C7XKSA1 offers superior R_DS(on) × E_oss FOM and JEDEC qualification-making it the preferred choice for high-reliability, high-efficiency PFC and LLC designs where thermal headroom and long-term field stability are critical.

Availability

IPW60R017C7XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar inverters requiring stable component supply, long-lifecycle support, and traceable industrial-grade sourcing.

Supply support for IPW60R017C7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and R&D infrastructure.

The CoolMOS™ C7 product line was engineered specifically for high-efficiency, high-power-density AC-DC conversion-targeting next-generation computing, telecom, and renewable energy systems demanding best-in-class switching performance and reliability.

FAQ

What is the maximum continuous drain current for IPW60R017C7XKSA1 at 100°C case temperature?

The maximum continuous drain current is 69 A at T_C = 100°C, as specified in Table 2 of the Rev. 2.0 datasheet. This derating reflects thermal limitations of the TO-247 package and ensures safe operation within the 150°C maximum junction temperature limit under sustained load conditions.

Is IPW60R017C7XKSA1 suitable for paralleling in high-current PFC designs?

Yes, but with specific layout requirements: ferrite beads on each gate line or separate totem-pole drivers are recommended to suppress gate oscillation and ensure current sharing. The device's matched threshold voltage and low R_DS(on) tolerance support stable parallel operation when these controls are implemented.

Does IPW60R017C7XKSA1 have an integrated body diode, and what are its key recovery parameters?

Yes-it features a fast-recovery body diode with t_rr = 630 ns, Q_rr = 18 µC, and peak I_rrm = 55 A at V_R = 400 V and dI_F/dt = 100 A/µs. These values are measured per JEDEC standards and enable use in quasi-resonant and LLC topologies without external diode supplementation.

What is the gate plateau voltage, and why is it important for gate driver design?

The gate plateau voltage is 5.0 V (typical), defined as the voltage level where the Miller capacitance dominates during turn-on. This value determines the minimum gate drive voltage needed to fully enhance the channel and influences driver selection-drivers must sustain ≥5 V during the Miller region to avoid partial turn-on and excessive switching loss.

IPW60R017C7XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 109A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 17mOhm @ 58.2A, 10V

Vgs(th) (Max) @ Id:: 4V @ 2.91mA

Gate Charge (Qg) (Max) @ Vgs:: 240 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 9890 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 446W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-41

IPW60R017C7XKSA1 FAQ

1.How can I place an order for IPW60R017C7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPW60R017C7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPW60R017C7XKSA1 reliable?

The price and inventory of IPW60R017C7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPW60R017C7XKSA1 is usually 5 days.

3.What payment methods are accepted for IPW60R017C7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPW60R017C7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPW60R017C7XKSA1?

IPW60R017C7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPW60R017C7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPW60R017C7XKSA1?

For technical support, including IPW60R017C7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPW60R017C7XKSA1 requirements.

6.How does Aetrix verify that IPW60R017C7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPW60R017C7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPW60R017C7XKSA1 meets industry standards.

7.What is the process for return or replacement of IPW60R017C7XKSA1?

All IPW60R017C7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPW60R017C7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPW60R017C7XKSA1 part is unused and in its original packaging.

Return procedure for IPW60R017C7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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