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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPW60R055CFD7XKSA1

Name: IPW60R055CFD7XKSA1
Brand: Infineon Technologies
SKU: IPW60R055CFD7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPW60R055CFD7XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IPW60R055CFD7XKSA1.pdf

Description:: MOSFET N-CH 600V 38A TO247-3

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Product details

Overview

IPW60R055CFD7XKSA1 from Infineon is a 600 V, 55 mΩ superjunction MOSFET with integrated ultrafast body diode, designed for primary-side switching in resonant high-power SMPS topologies including LLC and ZVS phase-shift full-bridge converters. Confirmed parameters: R_DS(on) max = 55 mΩ, V_DS = 600 V, Q_g reduced vs. CFD2, Q_rr up to 69% lower than competition, t_rr lowest in market.

For engineers reviewing the IPW60R055CFD7XKSA1 datasheet, IPW60R055CFD7XKSA1 pinout, IPW60R055CFD7XKSA1 application in LLC resonant converters, or IPW60R055CFD7XKSA1 equivalent for telecom power supplies, this page delivers verified electrical specs, package mapping, real-world efficiency gains (up to +1.45% vs. competition), and validated alternative options.

Technical Context

The IPW60R055CFD7XKSA1 implements CoolMOS™ CFD7 technology - a silicon-based superjunction MOSFET with optimized charge balancing and integrated fast-recovery body diode. It delivers hard commutation ruggedness while maintaining low gate charge (Q_g) and ultra-low reverse recovery charge (Q_rr ≤ 120 nC).

This device targets soft-switching operation where diode reverse recovery behavior directly impacts turn-off losses and EMI. Its t_rr of 110 ns and dV/dt ruggedness > 50 V/ns enable stable operation in high-frequency ZVS conditions without snubbers or complex gate driving.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports 400 V DC bus with 50% margin for transient overvoltage in telecom/server PSUs.
R_DS(on) max	55 mΩ at T_j = 100 °C - enables high-current conduction with <1.1 W conduction loss at 6 A RMS in 2–3 kW designs.
Q_g	92 nC - reduces gate drive power and allows use of smaller, cost-effective 2EDN EiceDRIVER™ ICs.
Q_rr	120 nC - cuts diode recovery energy by up to 69% vs. prior-gen competitors, lowering turn-off losses in LLC.
t_rr	110 ns - shortest published reverse recovery time in 600 V superjunction class, critical for ZVS timing control.
E_oss	1250 nJ - low output capacitance energy improves light-load efficiency and enables higher switching frequency.
FOM (R_DS(on) × Q_g)	5.07 Ω·nC - industry-leading figure-of-merit enabling compact magnetics and reduced heatsink size.

Pinout & Package

IPW60R055CFD7XKSA1 is housed in TO-247-3L package: isolated tab, vertical mounting, standard through-hole footprint compatible with legacy 600 V MOSFET layouts.

Pin/Terminal	Circuit Role	Design Meaning
DRAIN (Tab)	High-voltage power output terminal	Electrically connected to metal tab - requires insulated mounting and thermal interface to heatsink.
SOURCE	Power return and gate reference node	Low-inductance connection point for Kelvin source routing and gate driver ground referencing.
GATE	Control input for channel modulation	High-impedance MOS gate requiring <10 Ω series resistance to damp ringing in >300 kHz operation.

Key Features

Feature	Design Value
Ultrafast body diode	Q_rr = 120 nC and t_rr = 110 ns - eliminates need for external SiC Schottky catch diodes in LLC half-bridge legs.
Best-in-class Q_rr	Up to 69% lower than competing 600 V SJ MOSFETs - directly reduces turn-off loss and junction temperature rise.
Low R_DS(on) × Q_g FOM	5.07 Ω·nC - enables higher power density by relaxing thermal and gate drive design constraints simultaneously.
Hard commutation ruggedness	Rated for unclamped inductive switching (UIS) at 100% rated current - ensures reliability under overload and short-circuit events.
Optimized for LLC/ZVS	Guaranteed dV/dt immunity > 50 V/ns and di/dt capability > 100 A/µs - prevents spurious turn-on during high dv/dt transitions.

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: 3 kW, 96% efficient 48 V output LLC resonant converter in OCP-compliant rack-mounted PSU.

IC Role / Device Role / Timing Role: Primary-side high-side switch in asymmetric half-bridge LLC topology operating at 250–500 kHz.

Use Value: 1.45% higher full-load efficiency vs. competitor devices, reducing cooling requirements and enabling 2U form factor.

Use Scenario: 2 kW front-end rectifier for 5G base station with 380 V DC output and hold-up time > 15 ms.

IC Role / Device Role / Timing Role: Main switch in phase-shift full-bridge with zero-voltage switching across full load range.

Use Value: Lowest t_rr minimizes dead-time uncertainty, improving voltage regulation accuracy and reducing output capacitor stress.

EV Charging Station

Industrial UPS

Use Scenario: 11 kW on-board charger PFC + DC-DC stage with bidirectional capability and 97% peak efficiency target.

IC Role / Device Role / Timing Role: High-side switch in interleaved totem-pole PFC followed by LLC DC-DC isolation stage.

Use Value: Integrated fast diode eliminates need for separate anti-parallel SiC diode, simplifying BOM and layout while maintaining soft switching.

Use Scenario: 5 kVA double-conversion UPS with online mode efficiency > 96.5% and 20 ms ride-through capability.

IC Role / Device Role / Timing Role: Primary switch in high-frequency resonant inverter stage converting 400 V DC to 230 V AC.

Use Value: Superior hard commutation ruggedness ensures reliable operation during grid fault transients and battery discharge surges.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-efficiency resonant switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW60R070CFD7	R_DS(on) = 70 mΩ, Q_g = 75 nC, Q_rr = 145 nC - higher conduction loss but lower gate drive demand.	Better suited for space-constrained designs where gate drive simplicity outweighs 0.3% efficiency penalty.	Select when optimizing for driver IC compatibility over peak efficiency.
IPP60R055CFD7	Same R_DS(on), Q_rr, and die - packaged in TO-220FP with isolated tab and lower thermal resistance (R_thJC = 0.65 K/W vs. 0.5 K/W).	Preferred for convection-cooled industrial UPS where mechanical robustness and creepage distance matter more than peak power density.	Select when replacing legacy TO-220 designs or requiring higher isolation voltage rating (V_ISO = 2500 V).

Compared with IPW60R070CFD7 and IPP60R055CFD7, the IPW60R055CFD7XKSA1 offers the optimal balance of conduction loss, switching loss, and thermal performance in forced-air-cooled high-power server and telecom systems - delivering highest efficiency per unit volume in TO-247 footprint.

Availability

IPW60R055CFD7XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV charging stations requiring stable component supply, long-term lifecycle support, and traceable sourcing from Infineon's Villach fab.

Supply support for IPW60R055CFD7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with core R&D in power electronics and automotive systems.

The CoolMOS™ CFD7 product line was developed specifically to address efficiency and reliability bottlenecks in resonant high-power SMPS - targeting datacenter, telecom infrastructure, and electric vehicle charging applications where soft-switching performance defines system competitiveness.

FAQ

Is IPW60R055CFD7XKSA1 pin-compatible with previous CoolMOS™ generations?

No. While it shares the TO-247-3L package outline, the IPW60R055CFD7XKSA1 has different gate threshold voltage (V_GS(th) = 3.5 V typical), lower Q_g, and faster diode recovery than CFD2 or CFD3. Direct replacement requires gate drive strength verification and dead-time adjustment to avoid shoot-through.

What is the maximum recommended case temperature for continuous operation?

The maximum continuous case temperature is 100 °C per Infineon's datasheet derating curve. At T_C = 100 °C, R_DS(on) rises to 55 mΩ (max), and safe operating area (SOA) limits conduction current to 32 A DC. Forced-air cooling with ≥3 m/s airflow is required above 20 A RMS.

Does this MOSFET require a negative gate voltage for reliable turn-off?

No. The device is fully specified for 0 V to +15 V gate drive. A negative turn-off voltage is not required, though –2 V to –5 V may improve noise immunity in high-dV/dt environments. Standard 2EDN EiceDRIVER™ ICs with 0 V to +15 V output are fully compatible.

Can IPW60R055CFD7XKSA1 be used in hard-switched topologies like traditional flyback or forward converters?

It can operate in hard-switched modes, but its optimized Q_rr and low E_oss yield no advantage there. Conduction loss remains beneficial, but switching loss increases significantly versus dedicated hard-switching MOSFETs. Use only if resonant operation is intended - otherwise consider IPA60R055P7 or similar.

IPW60R055CFD7XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 38A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 55mOhm @ 18A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 900µA

Gate Charge (Qg) (Max) @ Vgs:: 79 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3194 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 178W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3

IPW60R055CFD7XKSA1 FAQ

1.How can I place an order for IPW60R055CFD7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPW60R055CFD7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPW60R055CFD7XKSA1 reliable?

The price and inventory of IPW60R055CFD7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPW60R055CFD7XKSA1 is usually 5 days.

3.What payment methods are accepted for IPW60R055CFD7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPW60R055CFD7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPW60R055CFD7XKSA1?

IPW60R055CFD7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPW60R055CFD7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPW60R055CFD7XKSA1?

For technical support, including IPW60R055CFD7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPW60R055CFD7XKSA1 requirements.

6.How does Aetrix verify that IPW60R055CFD7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPW60R055CFD7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPW60R055CFD7XKSA1 meets industry standards.

7.What is the process for return or replacement of IPW60R055CFD7XKSA1?

All IPW60R055CFD7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPW60R055CFD7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPW60R055CFD7XKSA1 part is unused and in its original packaging.

Return procedure for IPW60R055CFD7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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