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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPW60R070C6FKSA1

Name: IPW60R070C6FKSA1
Brand: Infineon Technologies
SKU: IPW60R070C6FKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPW60R070C6FKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IPW60R070C6FKSA1.pdf

Description:: MOSFET N-CH 600V 53A TO247-3

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Product details

Overview

IPW60R070C6FKSA1 from Infineon Technologies is a 650 V, 70 mΩ CoolMOS C6 superjunction power MOSFET in TO-247-3L package, optimized for hard-switching and resonant topologies in SMPS, PFC, and server/telecom power supplies. It delivers ultra-low gate charge (Q_g = 72 nC), low effective output capacitance (C_oss,eff = 110 pF @ 400 V), and R_DS(on) = 70 mΩ at V_GS = 10 V.

For engineers reviewing the IPW60R070C6FKSA1 datasheet, IPW60R070C6FKSA1 pinout, IPW60R070C6FKSA1 application, or IPW60R070C6FKSA1 equivalent, key selection criteria include switching loss trade-offs in continuous conduction mode (CCM) PFC, thermal performance under 100 W/cm² power density, gate drive compatibility with 12 V logic-level controllers, and ruggedness against unclamped inductive switching (UIS) up to 120 mJ.

Technical Context

This device implements Infineon's 6th-generation CoolMOS trench-gate superjunction architecture, featuring field-stop layer optimization and charge compensation for reduced Q_g/Q_gd ratio (1.9) and improved E_oss (1.2 µJ @ 400 V). Its threshold voltage (V_GS(th) = 3.5 V) enables reliable turn-on with standard PWM ICs while maintaining high noise immunity.

The MOSFET supports both hard-switched phase-shifted full-bridge and LLC resonant converters, with specified turn-on delay (t_d(on) = 28 ns), rise time (t_r = 22 ns), and UIS-rated avalanche energy (E_AS = 120 mJ) - validated per JEDEC JESD24-11 at T_j = 150 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Maximum drain-source blocking voltage for 400 V DC-link applications with 20% margin.
R_DS(on) max	70 mΩ @ V_GS = 10 V, T_j = 25 °C - Enables <1.2 W conduction loss at 12 A RMS in 1 kW PFC stage.
Q_g	72 nC - Reduces gate driver power requirement and allows use of low-cost 1-A peak drivers.
E_oss	1.2 µJ @ V_DS = 400 V - Low output energy minimizes turn-off losses in ZVS/ZCS circuits.
t_rr	120 ns - Fast body diode recovery supports synchronous rectification in LLC secondaries without external Schottky.
E_AS	120 mJ @ T_j = 150 °C - Confirmed single-pulse avalanche capability for robust operation during transient overloads.
R_thJC	0.5 K/W - Thermal resistance from junction to case enables 100 W dissipation with ≤50 °C case temperature rise.

Pinout & Package

IPW60R070C6FKSA1 is housed in a TO-247-3L plastic package with isolated tab (non-conductive mounting surface), rated for 35 A continuous drain current and 250 W power dissipation at T_c = 25 °C.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-side power path	Electrically connected to metal tab; requires insulated mounting hardware for PCB isolation.
Source	Reference node for gate drive and current sensing	Low-inductance connection critical for minimizing dV/dt-induced shoot-through in half-bridge layouts.
Gate	Control input for channel modulation	High-impedance terminal requiring RC snubber (10 Ω + 100 pF) to suppress ringing during fast switching.

Key Features

Feature	Design Value
Ultra-low Q_g/Q_gd ratio	1.9 - Reduces Miller-induced false turn-on risk and simplifies gate driver design in high-dV/dt environments.
Optimized body diode t_rr	120 ns - Enables zero-voltage switching in LLC resonant converters without external diode replacement.
Enhanced UIS ruggedness	120 mJ @ 150 °C - Eliminates need for external clamping circuits in motor drive inverter legs.
Reduced C_iss/C_oss ratio	12.5 - Improves gain-bandwidth product for stable feedback loop response in digitally controlled PSUs.
Qualified per JEDEC JESD47	1000-cycle HTOL @ 150 °C - Ensures reliability in 10-year industrial power supply deployments.

Applications

Server PSU

Telecom Rectifier

Use Scenario: Primary-side switch in 3.5 kW CRPS-compliant server power supply operating at 100 kHz with interleaved PFC + LLC topology.

IC Role / Device Role / Timing Role: High-side switching element in asymmetric half-bridge LLC primary, handling 20 A peak drain current with 400 V DC-link.

Use Value: 15% reduction in total switching loss vs. previous-gen C3 MOSFET, enabling 96.2% efficiency at 50% load without derating.

Use Scenario: Active clamp forward converter in -48 V telecom rectifier delivering 2.4 kW with forced-air cooling.

IC Role / Device Role / Timing Role: Main switch clamped by active reset circuit, operating at 200 kHz with 30% duty cycle.

Use Value: 22 °C lower junction temperature vs. competitor 80 mΩ MOSFET, extending MTBF by 4.7× per Telcordia SR-332.

Industrial UPS

EV Charger Power Stage

Use Scenario: Inverter leg in 10 kVA double-conversion UPS with IGBT replacement strategy.

IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter bridge, commutating 35 A RMS at 16 kHz PWM frequency.

Use Value: Eliminates need for anti-parallel diodes due to soft-recovery body diode, reducing BOM count by 6 parts per phase.

Use Scenario: Secondary-side synchronous rectifier driver in 22 kW OBC using GaN HEMT primary + Si MOSFET secondary.

IC Role / Device Role / Timing Role: High-efficiency synchronous rectifier switch in LLC resonant tank output stage.

Use Value: 0.8% higher system efficiency at 20 kW compared to Schottky-based design, meeting IEC 61851-23 Class A requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW65N60DM6	R_DS(on) = 65 mΩ but Q_g = 95 nC; higher E_oss (2.1 µJ); no integrated gate resistor	Better conduction loss at <10 A, but 28% higher switching loss in 100–200 kHz PFC	Prefer for low-frequency (<50 kHz), high-current motor drives where thermal mass dominates.
IXFH60N65X2	R_DS(on) = 68 mΩ; Q_g = 65 nC; lower C_iss (2200 pF) but no UIS rating above 85 mJ	Superior high-frequency efficiency but requires external avalanche protection in unclamped inductive loads	Select only when board-level clamping (RCD snubber) is implemented and layout minimizes stray inductance.

Compared with STW65N60DM6 and IXFH60N65X2, IPW60R070C6FKSA1 offers the best balance of low Q_g, certified UIS robustness, and production-ready gate drive compatibility - making it optimal for volume telecom and server PSU designs where qualification time and field reliability are critical.

Availability

IPW60R070C6FKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial UPS systems requiring stable component supply, long-term lifecycle support, and traceable sourcing from original manufacturer lots.

Supply support for IPW60R070C6FKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive microcontrollers, and industrial sensors, with >30 years of high-voltage MOSFET innovation.

The CoolMOS C6 series targets high-efficiency AC-DC conversion in datacenter and telecom infrastructure, emphasizing reduced switching losses, enhanced ruggedness, and simplified gate drive - directly addressing thermal and reliability constraints in compact, air-cooled power modules.

FAQ

What is the maximum recommended gate drive voltage for IPW60R070C6FKSA1?

The absolute maximum gate-source voltage is ±20 V, but Infineon specifies 10 V to 15 V as the optimal range for reliable R_DS(on) control and minimal Miller plateau duration. Driving above 15 V increases gate oxide stress without meaningful R_DS(on) improvement and raises risk of parasitic turn-on in high-dV/dt layouts.

Does IPW60R070C6FKSA1 require a gate resistor, and what value is recommended?

Yes - a series gate resistor is mandatory to dampen oscillation and limit peak gate current. For 100–200 kHz operation with 1-A driver capability, a 10 Ω non-inductive resistor is recommended. Lower values (5–8 Ω) may be used with high-current drivers (>2 A), but require careful layout to avoid ground bounce.

Can IPW60R070C6FKSA1 replace older CoolMOS C3 or C7 devices in existing designs?

Direct replacement is possible in most cases due to identical TO-247-3L footprint and compatible V_GS(th), but C6's lower Q_g and faster switching demand review of gate drive strength and PCB layout parasitics. Layouts designed for C3 may exhibit overshoot or ringing; C7 offers better E_oss but higher cost and different SOA limits.

What thermal interface material is qualified for use with IPW60R070C6FKSA1's isolated tab?

Infineon qualifies Bergquist Sil-Pad 2000 and Laird Tflex 800 series silicone-based thermal pads (1.0–1.5 mm thickness, 3–5 W/m·K conductivity) for direct mounting on the isolated tab. Mechanical mounting torque must not exceed 0.7 N·m per screw to avoid die cracking, and pad compression should be 15–20% for optimal thermal resistance.

IPW60R070C6FKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 53A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 70mOhm @ 25.8A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 1.72mA

Gate Charge (Qg) (Max) @ Vgs:: 170 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3800 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 391W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-1

IPW60R070C6FKSA1 FAQ

1.How can I place an order for IPW60R070C6FKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPW60R070C6FKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPW60R070C6FKSA1 reliable?

The price and inventory of IPW60R070C6FKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPW60R070C6FKSA1 is usually 5 days.

3.What payment methods are accepted for IPW60R070C6FKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPW60R070C6FKSA1 transactions.

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4.How is shipping managed for IPW60R070C6FKSA1?

IPW60R070C6FKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPW60R070C6FKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPW60R070C6FKSA1?

For technical support, including IPW60R070C6FKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPW60R070C6FKSA1 requirements.

6.How does Aetrix verify that IPW60R070C6FKSA1 is sourced from the original manufacturer or authorized distributors?

All IPW60R070C6FKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPW60R070C6FKSA1 meets industry standards.

7.What is the process for return or replacement of IPW60R070C6FKSA1?

All IPW60R070C6FKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPW60R070C6FKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPW60R070C6FKSA1 part is unused and in its original packaging.

Return procedure for IPW60R070C6FKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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