Infineon Technologies IPW60R099C7XKSA1

Overview

IPW60R099C7XKSA1 from Infineon Technologies is a 600 V, 99 mΩ R_DS(on) superjunction MOSFET in TO-247 package, optimized for high-frequency hard- and soft-switching PFC and LLC resonant converters. It delivers 36 A continuous drain current at T_j < 150°C, 42 nC total gate charge, and 4.95 µJ E_oss at 400 V - enabling high-efficiency, high-power-density server and telecom SMPS designs.

For engineers reviewing the IPW60R099C7XKSA1 datasheet, IPW60R099C7XKSA1 pinout, IPW60R099C7XKSA1 application, or IPW60R099C7XKSA1 equivalent, key selection criteria include dv/dt ruggedness (120 V/ns), body diode di/dt rating (360 A/µs), R_DS(on) × E_oss figure-of-merit, thermal resistance (1.135 °C/W), and industrial-grade JEDEC qualification.

Technical Context

This CoolMOS™ C7 device implements a trench-gated superjunction structure with optimized charge balance for reduced conduction and switching losses. Its 99 mΩ R_DS(on) at 10 V gate drive and 42 nC Q_g enable fast, low-loss switching up to MHz-range frequencies in high-voltage topologies.

The MOSFET features enhanced dv/dt immunity (120 V/ns), robust unclamped inductive switching capability (97 mJ E_AS), and a body diode rated for 360 A/µs reverse recovery di/dt - critical for reliable operation in asymmetric half-bridge and LLC primary-side switches.

Key Specifications

Pinout & Package

IPW60R099C7XKSA1 uses the standard TO-247 package with isolated tab (Drain-connected). The case is electrically connected to Drain (Pin 2), enabling direct heatsink mounting with no insulator required when Drain is at system ground or common potential.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Compared with STW62N60M2 and IXFH60N60X3, IPW60R099C7XKSA1 offers the lowest R_DS(on) × E_oss and highest dv/dt immunity - directly enabling smaller magnetics, reduced heatsink mass, and simplified gate drive in next-gen 3 kW+ SMPS.

Availability

IPW60R099C7XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar inverters requiring stable component supply, long-term lifecycle support, and industrial-grade reliability certification.

Supply support for IPW60R099C7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and R&D infrastructure.

This part belongs to the CoolMOS™ C7 superjunction MOSFET product line, engineered specifically for high-efficiency, high-frequency AC-DC conversion in datacenter, telecom, and renewable energy systems.

FAQ

What is the maximum continuous drain current for IPW60R099C7XKSA1 at 100°C case temperature?

The maximum continuous drain current is 14 A at T_C = 100°C, as specified in Table 2 of the Rev. 2.0 datasheet. This rating reflects thermal limitation at the case interface and assumes proper heatsinking with ≤1.135 °C/W R_thJC. Derating curves in Diagram 1 confirm linear reduction from 22 A at 25°C to 14 A at 100°C.

Is IPW60R099C7XKSA1 suitable for paralleling in high-current PFC designs?

Yes - but with mandatory gate ferrite beads or individual totem-pole drivers per device, as explicitly recommended in the datasheet's application note section. The 120 V/ns dv/dt rating and matched dynamic parameters across units support stable current sharing, provided layout symmetry and gate impedance matching are maintained.

Does this MOSFET have an isolated package tab?

Yes - the TO-247 package features an electrically isolated tab that is internally connected to the Drain (Pin 2). This allows direct mechanical mounting to a heatsink without thermal interface material requiring electrical isolation, provided the heatsink remains at Drain potential or is otherwise safely referenced.

What is the typical reverse recovery charge (Q_rr) of the integrated body diode?

The typical reverse recovery charge is 4.4 µC at V_R = 400 V, I_F = 9.7 A, and di_F/dt = 100 A/µs, per Table 7 in the datasheet. This low Q_rr contributes to reduced switching loss and EMI in bridge-leg commutation, especially in asymmetrical half-bridge topologies.