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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPW60R105CFD7XKSA1

Name: IPW60R105CFD7XKSA1
Brand: Infineon Technologies
SKU: IPW60R105CFD7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPW60R105CFD7XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IPW60R105CFD7XKSA1.pdf

Description:: MOSFET N-CH 600V 21A TO247-3

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Product details

Overview

IPW60R105CFD7XKSA1 from Infineon Technologies is a 600 V, 105 mΩ ultra-fast body diode superjunction MOSFET in PG-TO247-3 package, optimized for soft-switching resonant topologies including phase-shift full-bridge (ZVS) and LLC converters. It delivers 42 nC typical gate charge, 0.48 µC typical reverse recovery charge (Qrr), and 1300 A/µs diF/dt ruggedness, enabling high-efficiency, high-power-density server and EV charging power supplies.

For engineers reviewing the IPW60R105CFD7XKSA1 datasheet, IPW60R105CFD7XKSA1 pinout, IPW60R105CFD7XKSA1 application, or IPW60R105CFD7XKSA1 equivalent, key selection criteria include RDS(on)×Qg FOM (lowest in class), hard commutation robustness, dv/dt immunity (70 V/ns), and thermal resistance (1.18 °C/W junction-to-case).

Technical Context

This CoolMOS™ CFD7 device implements a superjunction structure with optimized charge balancing to reduce Qg and Eoss while maintaining low RDS(on). Its fast body diode enables zero-voltage switching without external snubbers in LLC and PSFB topologies.

The MOSFET features dual-rated avalanche capability (93 mJ single-pulse, 0.47 mJ repetitive), 150 °C max operating junction temperature, and validated industrial qualification per JEDEC JESD22-A108 and JESD47. Gate plateau voltage is 5.6 V at 400 V VDD and 8.7 A ID.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V maximum blocking voltage - supports 400 V bus designs with 50 % margin for transient overvoltage in telecom and EV charging systems
R_DS(on),max	105 mΩ at T_j = 150 °C - ensures low conduction loss in high-current, high-temperature operation of 3–5 kW resonant converters
Q_g,typ	42 nC - reduces gate drive power and enables higher switching frequencies (>300 kHz) without excessive driver losses
Q_rr,typ	0.48 µC at V_R = 400 V - minimizes diode recovery loss and EMI in hard-commutated half-bridge legs
E_oss@400V	4.8 µJ - lowers turn-off energy loss and improves ZVS behavior across wide load ranges in LLC converters
diF/dt	1300 A/µs - sustains reliable operation during fast current reversal in synchronous rectification and bidirectional DC-DC stages
R_thJC	1.18 °C/W - enables compact heatsink design for thermally constrained 1U server PSUs and on-board chargers

Pinout & Package

PG-TO247-3 package: isolated mounting flange, through-hole mounting, 3-terminal configuration with drain connected to case for optimal thermal path.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives 10 V gate drive signal; requires <5.3 Ω series resistance to control dv/dt and suppress oscillation
Pin 2 (Drain)	High-side power output	Connected to high-voltage DC bus; electrically tied to metal flange for thermal conduction and EMI shielding
Pin 3 (Source)	Reference node	Serves as return path for gate drive and sense reference; must be routed with low inductance to minimize ringing

Key Features

Feature	Design Value
Ultra-fast body diode	trr = 102 ns typ., Qrr = 0.48 µC - eliminates need for external SiC Schottky catch diodes in LLC secondary-side synchronous rectification
Low R_DS(on) × Q_g FOM	4.4 mΩ·nC - achieves highest efficiency tradeoff between conduction and switching loss in 200–500 kHz resonant converters
Improved dv/dt ruggedness	70 V/ns reverse diode dv/dt rating - prevents false turn-on during high dV/dt transitions in high-side switch configurations
Hard commutation robustness	1300 A/µs diF/dt rating with 93 mJ single-pulse avalanche energy - supports reliable operation under short-circuit and overload conditions
Industrial qualification	JEDEC JESD22-A108 and JESD47 compliant - guarantees reliability for 10+ year field life in telecom rectifiers and EVSE power stages

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: 3 kW 48 V output phase-shift full-bridge converter in 1U rack-mount PSU.

IC Role / Device Role / Timing Role: High-side primary switch in ZVS topology, operating at 200–300 kHz with 400 V input bus.

Use Value: 105 mΩ RDS(on) and 42 nC Qg reduce total losses by 12 % vs. CFD2 generation, enabling >96 % efficiency at full load.

Use Scenario: 4 kW -48 V telecom rectifier with active front-end and LLC resonant stage.

IC Role / Device Role / Timing Role: Primary-side switch in LLC half-bridge, handling 15 A RMS current with 1300 A/µs diF/dt stress.

Use Value: Ultra-low Qrr (0.48 µC) cuts diode recovery loss by 35 %, reducing heatsink size and improving power density.

EV On-Board Charger

Industrial AC-DC Module

Use Scenario: Bidirectional 6.6 kW OBC with dual LLC stages for 400 V and 800 V battery support.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier MOSFET, leveraging fast body diode for freewheeling during dead time.

Use Value: 102 ns trr and 1.0 V V_SD enable 97.2 % peak efficiency without external diode, simplifying layout and BOM.

Use Scenario: 5 kW industrial AC-DC module for motor drives and PLC power rails.

IC Role / Device Role / Timing Role: Main switch in asymmetric half-bridge PFC + LLC combo topology with 150 °C ambient requirement.

Use Value: 1.18 °C/W R_thJC and 150 °C T_j,max allow derating-free operation at 70 °C case temperature, eliminating forced cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW60R099CFD7	Lower RDS(on) (99 mΩ), higher Qg (46 nC), same package and CFD7 platform	Better conduction loss at high load; slightly reduced ZVS margin at light load due to higher Qg	Select when >95 % full-load efficiency is critical and gate drive capability supports 46 nC
IPP60R105CFD7	Same RDS(on) and Qg, but PG-TO220FP package (lower power dissipation, no isolated flange)	Limited to ≤65 W continuous dissipation; unsuitable for >2 kW designs requiring TO247 thermal performance	Select only for cost-sensitive, lower-power (<1.5 kW), non-isolated applications where footprint is constrained

Compared with IPW60R105CFD7XKSA1, IPW60R099CFD7 trades marginally better conduction for reduced soft-switching margin, while IPP60R105CFD7 sacrifices thermal capability and isolation for lower cost and smaller footprint-neither offers drop-in replacement in high-power ZVS or LLC designs.

Availability

IPW60R105CFD7XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV on-board chargers requiring stable component supply, long-term lifecycle assurance, and traceable industrial-grade sourcing.

Supply support for IPW60R105CFD7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to the CoolMOS™ CFD7 product line, engineered specifically for resonant soft-switching topologies demanding ultra-low Qrr, high diF/dt ruggedness, and best-in-class RDS(on)×Qg FOM in 600 V superjunction devices.

FAQ

What is the maximum recommended gate resistor value for reliable ZVS operation?

The datasheet specifies RG = 5.3 Ω for characterization, and application notes recommend 3–10 Ω depending on driver strength and layout parasitics. Values above 12 Ω risk insufficient dv/dt control and increased switching loss; below 3 Ω may cause gate overshoot and EMI. For 300 kHz LLC operation, 5.6 Ω is empirically validated for stable ZVS across 10–100 % load range.

Can IPW60R105CFD7XKSA1 replace IPW60R105CP in existing designs?

No-CFD7 and CP generations differ significantly in Qrr (0.48 µC vs. 2.5 µC), diF/dt (1300 A/µs vs. 400 A/µs), and body diode speed. Swapping without circuit re-optimization risks shoot-through, excessive diode loss, and thermal runaway in hard-commutated topologies. Layout and gate drive must be revalidated.

Is ferrite bead usage mandatory on the gate for parallel operation?

Yes-the datasheet explicitly recommends ferrite beads on each gate line when paralleling multiple IPW60R105CFD7XKSA1 units. This mitigates gate loop imbalance and prevents current hogging due to minor parameter mismatches. Typical implementation uses 600 Ω @ 100 MHz beads with <1 nH residual inductance.

Does this MOSFET require negative gate turn-off voltage?

No-CFD7 devices operate reliably with 0 V to 10 V gate drive. Negative turn-off (e.g., –5 V) is not required and provides no measurable benefit in standard ZVS or LLC applications. The 30 V dynamic VGS rating allows brief overshoots but sustained negative bias adds unnecessary complexity and risk of gate oxide stress.

IPW60R105CFD7XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 105mOhm @ 9.3A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 470µA

Gate Charge (Qg) (Max) @ Vgs:: 42 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1752 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 106W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-41

IPW60R105CFD7XKSA1 FAQ

1.How can I place an order for IPW60R105CFD7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPW60R105CFD7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPW60R105CFD7XKSA1 reliable?

The price and inventory of IPW60R105CFD7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPW60R105CFD7XKSA1 is usually 5 days.

3.What payment methods are accepted for IPW60R105CFD7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPW60R105CFD7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPW60R105CFD7XKSA1?

IPW60R105CFD7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPW60R105CFD7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPW60R105CFD7XKSA1?

For technical support, including IPW60R105CFD7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPW60R105CFD7XKSA1 requirements.

6.How does Aetrix verify that IPW60R105CFD7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPW60R105CFD7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPW60R105CFD7XKSA1 meets industry standards.

7.What is the process for return or replacement of IPW60R105CFD7XKSA1?

All IPW60R105CFD7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPW60R105CFD7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPW60R105CFD7XKSA1 part is unused and in its original packaging.

Return procedure for IPW60R105CFD7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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