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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPW60R120P7XKSA1

Name: IPW60R120P7XKSA1
Brand: Infineon Technologies
SKU: IPW60R120P7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPW60R120P7XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IPW60R120P7XKSA1.pdf

Description:: MOSFET N-CH 600V 26A TO247-3

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Product details

Overview

IPW60R120P7XKSA1 from Infineon Technologies is a 600 V, 120 mΩ R_DS(on) CoolMOS™ P7 superjunction power MOSFET in PG-TO247-3 package, featuring 36 nC total gate charge, 78 A pulsed drain current, and 900 A/µs body diode commutation speed. It is engineered for high-efficiency hard- and soft-switching PFC and LLC stages in server PSUs, telecom rectifiers, and industrial UPS systems.

For engineers reviewing the IPW60R120P7XKSA1 datasheet, IPW60R120P7XKSA1 pinout, IPW60R120P7XKSA1 application, or IPW60R120P7XKSA1 equivalent, key selection criteria include its low E_oss (4.0 µJ @ 400 V), robust 82 mJ single-pulse avalanche energy, JEDEC-qualified industrial temperature range (−55 °C to +150 °C), and proven body diode ruggedness under hard commutation.

Technical Context

This 600 V superjunction MOSFET implements Infineon's 7th-generation CoolMOS™ platform with optimized charge balancing for reduced switching losses and enhanced dv/dt ruggedness (80 V/ns). Its gate plateau voltage of 5.2 V and low Q_gd/Q_g ratio (11/36 nC) support stable, low-ringing turn-on in high-frequency resonant topologies.

The device integrates a fast, soft-recovery body diode (t_rr = 207 ns, Q_rr = 1.9 µC) with 900 A/µs diF/dt capability-enabling reliable operation in bidirectional and synchronous rectification roles without external snubbing in LLC half-bridge configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - supports 400 V DC-link designs with 62.5 % voltage margin for transient overvoltage handling
R_DS(on) max @ 150°C	120 mΩ - enables compact thermal design in 1–3 kW PFC stages with <1.31 °C/W R_thJC
Q_g typ	36 nC - reduces gate drive power loss and simplifies 13 V gate driver selection in 100–300 kHz applications
E_oss @ 400 V	4.0 µJ - lowers turn-off loss and improves efficiency in ZVS/ZCS soft-switching converters
Body diode diF/dt	900 A/µs - sustains high-current reverse recovery without oscillation in high-dV/dt LLC resonant tanks
Avalanche energy E_AS	82 mJ - provides intrinsic overvoltage protection during load dump or short-circuit events without external clamping
ESD rating (HBM)	>2 kV - ensures robust handling during PCB assembly and reduces gate oxide failure risk in automated manufacturing

Pinout & Package

IPW60R120P7XKSA1 uses the PG-TO247-3 through-hole package with isolated mounting flange, optimized for high-power thermal dissipation and mechanical stability in industrial power supplies.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Low-impedance gate terminal requiring ≤5.3 Ω series resistance to suppress ringing; referenced to source
Pin 2 (Drain)	High-voltage power output	Connected to DC-link or transformer primary; electrically tied to metal flange for thermal conduction
Pin 3 (Source)	Power return / reference node	Serves as local ground reference for gate drive and current sensing; carries full load current and diode reverse recovery charge

Key Features

Feature	Design Value
Hard/soft switching compatibility	Validated for both continuous conduction mode (CCM) PFC and zero-voltage switching (ZVS) LLC due to low ringing tendency and 80 V/ns dv/dt ruggedness
Body diode ruggedness	Withstands 900 A/µs commutation diF/dt without failure-critical for unidirectional flyback and bidirectional bridgeless PFC
Thermal performance	1.31 °C/W junction-to-case resistance enables >95 W continuous dissipation at T_C = 25 °C without forced air
JEDEC industrial qualification	Rated for −55 °C to +150 °C operating junction temperature with full parametric guarantee per JESD47
Low R_DS(on) × area	0.96 Ω·mm² (120 mΩ × 8 mm² die area)-delivers higher power density than prior P6 generation in same TO247 footprint

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: 3 kW front-end PFC stage in redundant 1U server PSUs operating at 100–200 kHz with active clamp control.

IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost converter; handles 26 A RMS input current at 230 V AC.

Use Value: 120 mΩ R_DS(on) and 4.0 µJ E_oss reduce conduction + switching loss by 18 % vs. P6 generation, enabling 96.2 % efficiency at full load.

Use Scenario: 2.5 kW isolated DC/DC stage in -48 V telecom rectifier using phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: Primary-side ZVS switch; operates at 150 kHz with 400 V DC-link and 50 % duty cycle.

Use Value: 900 A/µs body diode diF/dt ensures clean turn-on during lagging-leg commutation, eliminating need for external diode snubbers.

Industrial UPS Inverter

LED Streetlight Driver

Use Scenario: Output H-bridge in 5 kVA online UPS delivering 230 V AC with 10 ms transfer time and THD <3 %.

IC Role / Device Role / Timing Role: Low-side switching element in IGBT-driven inverter leg; subjected to repetitive 82 mJ avalanche stress during grid fault conditions.

Use Value: 82 mJ single-pulse E_AS provides intrinsic overvoltage clamping, reducing reliance on TVS diodes and improving system MTBF.

Use Scenario: Secondary-side synchronous rectifier in 300 W constant-current LED driver with LLC resonance at 350 kHz.

IC Role / Device Role / Timing Role: Fast-recovery body diode used for zero-current switching (ZCS) during dead-time; conducts 12 A peak forward current.

Use Value: 207 ns t_rr and 1.9 µC Q_rr minimize reverse recovery loss, increasing driver efficiency from 92.1 % to 93.7 % at nominal load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW62N60M2	R_DS(on) = 115 mΩ, Q_g = 42 nC, E_oss = 5.1 µJ @ 400 V	Higher gate charge increases driver loss; slightly lower R_DS(on) benefits conduction-limited designs	Prefer when thermal budget allows higher gate drive power and R_DS(on) dominates total loss
IXFH60N60X3	R_DS(on) = 130 mΩ, Q_g = 32 nC, E_oss = 3.8 µJ @ 400 V	Lower Q_g eases gate drive design but higher R_DS(on) raises conduction loss above 15 A RMS	Choose for ZVS-dominant topologies where switching loss > conduction loss and gate drive simplicity is critical

Compared with STW62N60M2 and IXFH60N60X3, IPW60R120P7XKSA1 delivers the best balance of low E_oss, moderate Q_g, and industry-leading body diode ruggedness-making it optimal for mixed-mode PFC+LLC architectures where both hard and soft switching occur within one power stage.

Availability

IPW60R120P7XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial UPS systems requiring stable component supply, long-term lifecycle support, and JEDEC-qualified reliability.

Supply support for IPW60R120P7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and wafer fabrication facilities.

The CoolMOS™ P7 product line was developed to extend superjunction MOSFET performance into higher-frequency, higher-efficiency SMPS applications-specifically targeting 100–500 kHz PFC, LLC, and phase-shifted full-bridge topologies in datacenter and telecom infrastructure.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

Infineon specifies a 5.3 Ω gate resistor for characterization (V_DD = 400 V, I_D = 8.2 A). For production use, 4.7–10 Ω is typical: values below 4.7 Ω increase ringing risk, while >10 Ω extends switching times and raises losses. Ferrite beads are advised for paralleled devices per datasheet note.

Does IPW60R120P7XKSA1 require a negative gate turn-off voltage?

No. The device is rated for ±30 V dynamic gate-source voltage and operates reliably with 0 V to +13 V gate drive. Negative turn-off (e.g., −5 V) is not required and offers no benefit-its low Q_gd/Q_g ratio and 5.2 V gate plateau ensure clean, low-overshoot turn-off with standard 0/+12 V drivers.

Can this MOSFET replace older CoolMOS™ P6 devices in existing designs?

Yes-pin-compatible with IPW60R120P6XKSA1 and functionally superior: 12 % lower E_oss, 15 % lower R_DS(on) at 150 °C, and improved body diode ruggedness. No layout changes needed; gate drive and thermal design remain valid, though efficiency gains may allow derating.

Is the PG-TO247-3 package lead-free and RoHS-compliant?

Yes. IPW60R120P7XKSA1 is manufactured in full compliance with RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. The package uses lead-free solderable terminations and meets JEDEC J-STD-020 moisture sensitivity level MSL3.

IPW60R120P7XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ P7

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 26A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 120mOhm @ 8.2A, 10V

Vgs(th) (Max) @ Id:: 4V @ 410µA

Gate Charge (Qg) (Max) @ Vgs:: 36 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1544 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 95W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3

IPW60R120P7XKSA1 FAQ

1.How can I place an order for IPW60R120P7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPW60R120P7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPW60R120P7XKSA1 reliable?

The price and inventory of IPW60R120P7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPW60R120P7XKSA1 is usually 5 days.

3.What payment methods are accepted for IPW60R120P7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPW60R120P7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPW60R120P7XKSA1?

IPW60R120P7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPW60R120P7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPW60R120P7XKSA1?

For technical support, including IPW60R120P7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPW60R120P7XKSA1 requirements.

6.How does Aetrix verify that IPW60R120P7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPW60R120P7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPW60R120P7XKSA1 meets industry standards.

7.What is the process for return or replacement of IPW60R120P7XKSA1?

All IPW60R120P7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPW60R120P7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPW60R120P7XKSA1 part is unused and in its original packaging.

Return procedure for IPW60R120P7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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