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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPW60R125CFD7XKSA1

Name: IPW60R125CFD7XKSA1
Brand: Infineon Technologies
SKU: IPW60R125CFD7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPW60R125CFD7XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IPW60R125CFD7XKSA1.pdf

Description:: MOSFET N-CH 600V 18A TO247-3

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Product details

Overview

IPW60R125CFD7XKSA1 from Infineon Technologies is a 600 V, 125 mΩ ultra-fast body diode CoolMOS™ CFD7 superjunction MOSFET in PG-TO247-3 package, optimized for soft-switching resonant topologies including phase-shift full-bridge (ZVS) and LLC converters. It delivers 36 nC typical gate charge, 0.47–0.94 µC reverse recovery charge (Qrr), and 1300 A/µs diF/dt ruggedness, enabling high-efficiency, high-power-density server and EV charging power supplies.

For engineers reviewing the IPW60R125CFD7XKSA1 datasheet, IPW60R125CFD7XKSA1 pinout, IPW60R125CFD7XKSA1 application, or IPW60R125CFD7XKSA1 equivalent, key selection criteria include RDS(on)×Qg FOM (lowest in class), hard commutation robustness, ZVS/LLC timing behavior, and thermal resistance (RthJC = 1.36 °C/W) for thermally constrained industrial designs.

Technical Context

This MOSFET implements Infineon's CoolMOS™ CFD7 superjunction architecture with optimized charge distribution to minimize Qg and Eoss while maintaining low RDS(on). Its ultra-fast body diode enables reliable zero-voltage switching without external snubbers in resonant converters.

The device features enhanced dv/dt ruggedness (70 V/ns reverse diode, 120 V/ns MOSFET) and validated hard commutation performance up to 1300 A/µs diF/dt - critical for unidirectional energy transfer in LLC half-bridge legs and phase-shifted full-bridge primary switches.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V maximum blocking voltage - supports 400 V DC bus with 50 % margin for transient overvoltage in telecom/server PSUs.
R_DS(on),max	125 mΩ at T_j = 150 °C - enables low conduction loss in high-current primary-side switching at elevated temperatures.
Q_g,typ	36 nC - reduces gate drive power and allows use of smaller, lower-cost gate drivers in high-frequency (>100 kHz) resonant designs.
Q_rr	0.47–0.94 µC - minimizes switching loss and EMI during body diode commutation in ZVS transitions.
E_oss	4.1 µJ at 400 V - lowers turn-off energy loss and improves efficiency in soft-switching topologies.
diF/dt	1300 A/µs - ensures robust hard commutation without oscillation or failure when used in asymmetric half-bridge configurations.
R_thJC	1.36 °C/W - enables direct heatsink mounting for high-power density thermal management in compact 1–3 kW modules.

Pinout & Package

Package: PG-TO247-3 (through-hole, isolated tab), with drain connected to metal tab for low-inductance thermal path and electrical isolation per IEC 60747-17.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives PWM signal; low input capacitance (Ciss = 1503 pF) enables fast edge control with minimal driver stress.
Pin 2 (Drain)	High-side power terminal	Connected to HV DC bus; metal tab provides low-impedance thermal path and electrical connection to heatsink.
Pin 3 (Source)	Reference and current return	Serves as local ground reference for gate driver; low-inductance layout essential to prevent shoot-through in bridge configurations.

Key Features

Feature	Design Value
Ultra-fast body diode	trr = 102–152 ns and Qrr = 0.47–0.94 µC - eliminates need for external SiC Schottky catch diodes in LLC synchronous rectification.
Low R_DS(on) × Q_g FOM	125 mΩ × 36 nC = 4.5 Ω·nC - highest figure-of-merit among 600 V THD MOSFETs, directly improving full-load efficiency.
Improved dv/dt ruggedness	70 V/ns reverse diode dv/dt - prevents false turn-on during high dV/dt transitions in high-side switch position.
Hard commutation robustness	Validated to 1300 A/µs diF/dt - supports reliable operation in asymmetric resonant converters without gate clamping.
JEDEC industrial qualification	Qualified per JEDEC47/20/22 - ensures long-term reliability under thermal cycling and humidity bias in 24/7 server/telecom environments.

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 1.5–3 kW phase-shifted full-bridge (PSFB) with ZVS operation at 100–300 kHz.

IC Role / Device Role / Timing Role: High-side and low-side switching element; body diode conducts during dead-time for zero-voltage turn-on.

Use Value: 0.47 µC Qrr and 1300 A/µs diF/dt enable stable ZVS across full load range without added snubbers or gate damping.

Use Scenario: LLC resonant converter primary switch in 48 V telecom rectifier with 380 V DC bus.

IC Role / Device Role / Timing Role: Resonant tank switch; operates in soft-switching region where body diode conduction defines dead-time behavior.

Use Value: 4.1 µJ Eoss and 36 nC Qg reduce total switching loss by >15 % vs. prior-gen CFD2, increasing system efficiency to >96 %.

EV Onboard Charger

Industrial AC-DC Module

Use Scenario: Bidirectional CLLC DC-DC stage in 11 kW OBC, operating in both buck and boost modes.

IC Role / Device Role / Timing Role: Symmetric switch with bidirectional body diode conduction; handles reverse recovery in both directions.

Use Value: Ultra-low Qrr asymmetry (<10 % variation) ensures balanced losses and thermal distribution across dual-phase operation.

Use Scenario: High-reliability 2 kW industrial AC-DC front-end with wide ambient temperature range (-40 to +85 °C).

IC Role / Device Role / Timing Role: Main switching transistor in continuous conduction mode (CCM) PFC + resonant DC-DC cascade.

Use Value: 150 °C max junction rating and JEDEC industrial qualification ensure 10+ year field life under sustained thermal stress.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-efficiency resonant switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW60R099CFD7	R_DS(on) = 99 mΩ, Q_g = 45 nC - lower conduction loss but higher gate drive demand.	Better suited for <1.5 kW designs where thermal headroom is limited but gate drive capability exists.	Select when prioritizing full-load efficiency over light-load switching loss and gate driver cost.
IPP60R125CFD7	Same die in PG-TO220FP package - R_thJC = 2.2 °C/W, no isolated tab, lower max P_tot (69 W).	Limited to <1 kW industrial SMPS with forced-air cooling; unsuitable for high-power density or isolated heatsink mounting.	Choose only for cost-sensitive, lower-power applications where TO-220 footprint and non-isolated mounting are acceptable.

Compared with IPW60R099CFD7 and IPP60R125CFD7, IPW60R125CFD7XKSA1 offers optimal balance of conduction loss, switching loss, thermal performance, and mechanical isolation - making it the preferred choice for 1.5–3 kW ZVS/LLC systems requiring long-term reliability and compact heatsinking.

Availability

IPW60R125CFD7XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply, JEDEC-qualified industrial reliability, and consistent parametric performance across production lots.

Supply support for IPW60R125CFD7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to the CoolMOS™ CFD7 product line - engineered specifically for soft-switching resonant topologies, emphasizing ultra-low Qrr, high diF/dt ruggedness, and best-in-class RDS(on)×Qg tradeoff for high-power-density power conversion.

FAQ

What is the maximum recommended gate resistor value for reliable ZVS operation?

A gate resistor of ≤5.3 Ω is validated in the datasheet for ZVS operation at 400 V bus and 8.1 A ID. Higher values increase turn-on delay and risk incomplete ZVS at light loads; values below 3.3 Ω may cause excessive gate ringing. Layout-dependent parasitic inductance must be minimized regardless of RG choice.

Can IPW60R125CFD7XKSA1 be paralleled for higher current handling?

Yes, but only with strict layout symmetry and individual gate ferrite beads (or separate totem-pole drivers) per device, as stated in the datasheet. Mismatched gate loop inductance causes dynamic current imbalance; thermal coupling must also be uniform to avoid runaway in shared heatsink configurations.

Does this MOSFET require a negative gate turn-off voltage?

No - the device is rated for ±30 V dynamic gate voltage and operates reliably with 0 V to +12 V or +15 V gate drive. Negative turn-off (e.g., –5 V) is not required for stability, though it may marginally improve noise immunity in high-dV/dt environments.

Is the metal tab electrically isolated from all pins?

Yes - the PG-TO247-3 package features an isolated tab (pin 2 drain connected to tab, but tab insulated from PCB mount surface). Isolation withstand voltage is rated per IEC 60747-17; creepage and clearance meet reinforced insulation requirements for 400 V DC bus applications.

IPW60R125CFD7XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 125mOhm @ 7.8A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 390µA

Gate Charge (Qg) (Max) @ Vgs:: 36 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1503 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 92W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3

IPW60R125CFD7XKSA1 FAQ

1.How can I place an order for IPW60R125CFD7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPW60R125CFD7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPW60R125CFD7XKSA1 reliable?

The price and inventory of IPW60R125CFD7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPW60R125CFD7XKSA1 is usually 5 days.

3.What payment methods are accepted for IPW60R125CFD7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPW60R125CFD7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPW60R125CFD7XKSA1?

IPW60R125CFD7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPW60R125CFD7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPW60R125CFD7XKSA1?

For technical support, including IPW60R125CFD7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPW60R125CFD7XKSA1 requirements.

6.How does Aetrix verify that IPW60R125CFD7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPW60R125CFD7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPW60R125CFD7XKSA1 meets industry standards.

7.What is the process for return or replacement of IPW60R125CFD7XKSA1?

All IPW60R125CFD7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPW60R125CFD7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPW60R125CFD7XKSA1 part is unused and in its original packaging.

Return procedure for IPW60R125CFD7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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