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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPW60R125P6XKSA1

Name: IPW60R125P6XKSA1
Brand: Infineon Technologies
SKU: IPW60R125P6XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPW60R125P6XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IPW60R125P6XKSA1.pdf

Description:: MOSFET N-CH 600V 30A TO247-3

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Product details

Overview

IPW60R125P6XKSA1 from Infineon Technologies is a 600 V, 125 mΩ superjunction N-channel power MOSFET in the CoolMOS™ P6 family, optimized for high-efficiency hard-switching and resonant SMPS topologies. It delivers 30 A continuous drain current at T_C = 25°C, 56 nC total gate charge, and 7.2 µJ output energy at 400 V, enabling compact, thermally efficient PFC and main switch stages in server PSUs and telecom rectifiers.

For engineers reviewing the IPW60R125P6XKSA1 datasheet, IPW60R125P6XKSA1 pinout, IPW60R125P6XKSA1 application, or IPW60R125P6XKSA1 equivalent, key selection criteria include R_DS(on) vs. Q_g trade-off, dv/dt ruggedness (100 V/ns), body diode commutation capability (300 A/µs), and TO-247 thermal resistance (0.57 °C/W).

Technical Context

This device implements Infineon's superjunction architecture with optimized charge balancing for reduced conduction and switching losses. Its 6.1 V gate plateau voltage and low effective output capacitance (90 pF energy-related) support stable ZVS operation in LLC resonant converters.

The MOSFET features enhanced avalanche ruggedness (636 mJ single-pulse E_AS) and industrial-grade qualification per JEDEC J-STD-20/JESD22. Its 0.9 V body diode forward voltage at 14.5 A and 385 ns reverse recovery time enable reliable synchronous rectification and bidirectional current handling in bridge configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Rated blocking voltage for 400 V DC-link applications with 25% margin
R_DS(on),max	125 mΩ @ T_j = 150°C - Enables <30 W conduction loss at 11.6 A in PFC boost stage
Q_g,typ	56 nC - Low gate drive power requirement for 100–300 kHz PWM operation
E_oss@400V	7.2 µJ - Reduces turn-on switching loss in hard-switched converters
dv/dt ruggedness	100 V/ns - Supports robust operation in high-dI/dt environments without false triggering
Body diode dI/dt	300 A/µs - Allows safe commutation in phase-shifted full-bridge and active clamp topologies
P_tot	219 W @ T_C = 25°C - Sustains high-power operation with standard TO-247 heatsinking

Pinout & Package

IPW60R125P6XKSA1 is housed in a TO-247 package with isolated tab (PG-TO247). The case serves as the Drain terminal, enabling direct mounting to heatsink without insulating washer when referenced to high-side potential.

Pin/Terminal	Circuit Role	Design Meaning
Tab / Case	Drain (D)	High-voltage power node; electrically connected to internal die backside; requires isolation or common-potential mounting
Pin 1	Gate (G)	Control input; low gate resistance (1.7 Ω) enables fast, low-loss switching with standard gate drivers
Pin 2	Source (S)	Reference node for gate drive; connects to power ground or floating source in high-side configuration

Key Features

Feature	Design Value
Superjunction charge optimization	Reduces R_DS(on) × Q_g figure-of-merit by >25% vs. prior CoolMOS™ generations
Enhanced dv/dt immunity	100 V/ns rating eliminates need for external gate clamping in most 400 V bus designs
High commutation ruggedness	300 A/µs body diode dI/dt supports zero-voltage switching in LLC and phase-shifted topologies
Industrial temperature qualification	Rated for continuous operation from –55°C to +150°C junction temperature per JEDEC standards

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3.3 kW front-end AC-DC converter with interleaved PFC and phase-shifted full-bridge.

IC Role / Device Role / Timing Role: High-side main switch handling 400 V DC-link with 100 kHz switching frequency and ZVS-assisted turn-on.

Use Value: 125 mΩ R_DS(on) and 7.2 µJ E_oss reduce conduction and switching losses, enabling >96% efficiency at full load.

Use Scenario: Output rectification stage in 48 V telecom rectifier using active clamp forward topology.

IC Role / Device Role / Timing Role: Synchronous rectifier operating with bidirectional current flow and high dI/dt during dead-time commutation.

Use Value: 300 A/µs body diode dI/dt and 0.9 V V_SD minimize reverse recovery loss and conduction drop.

LCD TV Power Board

UPS Inverter Stage

Use Scenario: PFC boost switch in 250 W LCD TV power board with universal AC input (90–264 VAC).

IC Role / Device Role / Timing Role: Critical conduction mode (CRM) switch requiring low Q_g for light-load efficiency and high dv/dt immunity for EMI robustness.

Use Value: 56 nC Q_g and 100 V/ns dv/dt rating ensure stable CRM operation across line and load variations.

Use Scenario: Half-bridge in 1 kVA online UPS inverter delivering pure sine wave output.

IC Role / Device Role / Timing Role: High-reliability switching element subjected to repetitive unclamped inductive switching during battery backup mode.

Use Value: 636 mJ single-pulse avalanche energy rating protects against transient overvoltage during short-circuit events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R125P6	Same die, TO-220 package; higher R_thJC (0.95 °C/W) and lower P_tot (136 W)	Suitable for lower-power (<1 kW), space-constrained designs where heatsink area is limited	Select when mechanical footprint or cost outweighs thermal performance requirements
IPW60R099P6	Lower R_DS(on) (99 mΩ), higher Q_g (72 nC); identical TO-247 package and voltage rating	Better for high-current, lower-frequency (<100 kHz) applications where conduction loss dominates	Choose when optimizing for full-load efficiency over light-load or switching loss

Compared with IPP60R125P6, IPW60R125P6XKSA1 offers 35% lower thermal resistance and 60% higher power dissipation; versus IPW60R099P6, it trades 21% higher R_DS(on) for 22% lower gate charge-favoring high-frequency, medium-power SMPS designs.

Availability

IPW60R125P6XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and UPS inverter stages requiring stable component supply and long-term industrial-grade reliability.

Supply support for IPW60R125P6XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The CoolMOS™ P6 product line targets high-efficiency AC-DC and DC-DC conversion in industrial, computing, and telecom infrastructure, emphasizing low-loss superjunction MOSFETs with enhanced ruggedness and ease of use.

FAQ

What is the maximum continuous drain current for IPW60R125P6XKSA1 at 100°C case temperature?

The maximum continuous drain current is 19.0 A at T_C = 100°C, as specified in Table 2 of the Rev. 2.0 datasheet. This derating reflects thermal limits of the TO-247 package and ensures safe operation within the 150°C maximum junction temperature under sustained load conditions.

Does IPW60R125P6XKSA1 require a gate resistor for stability in hard-switching applications?

Yes-a gate resistor is required to control switching speed and suppress oscillation. The datasheet specifies R_G = 1.7 Ω for dynamic characterization; typical design values range from 5 Ω to 22 Ω depending on EMI requirements, layout parasitics, and driver strength.

Can IPW60R125P6XKSA1 be paralleled with identical units without external gate damping?

No. The datasheet explicitly recommends ferrite beads on each gate or separate totem-pole drivers when paralleling to prevent current imbalance and oscillatory gate voltage due to mismatched loop inductances and capacitive coupling.

Is the TO-247 tab of IPW60R125P6XKSA1 electrically isolated from the leads?

No-the tab is internally connected to the Drain terminal. It is not electrically isolated; therefore, mounting to a heatsink requires either direct thermal contact (if heatsink is at drain potential) or an insulating pad with appropriate voltage rating for grounded or floating heatsink configurations.

IPW60R125P6XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ P6

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 125mOhm @ 11.6A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 960µA

Gate Charge (Qg) (Max) @ Vgs:: 56 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2660 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 219W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3

IPW60R125P6XKSA1 FAQ

1.How can I place an order for IPW60R125P6XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPW60R125P6XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPW60R125P6XKSA1 reliable?

The price and inventory of IPW60R125P6XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPW60R125P6XKSA1 is usually 5 days.

3.What payment methods are accepted for IPW60R125P6XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPW60R125P6XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPW60R125P6XKSA1?

IPW60R125P6XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPW60R125P6XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPW60R125P6XKSA1?

For technical support, including IPW60R125P6XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPW60R125P6XKSA1 requirements.

6.How does Aetrix verify that IPW60R125P6XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPW60R125P6XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPW60R125P6XKSA1 meets industry standards.

7.What is the process for return or replacement of IPW60R125P6XKSA1?

All IPW60R125P6XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPW60R125P6XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPW60R125P6XKSA1 part is unused and in its original packaging.

Return procedure for IPW60R125P6XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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