Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPW60R170CFD7XKSA1

Name: IPW60R170CFD7XKSA1
Brand: Infineon Technologies
SKU: IPW60R170CFD7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPW60R170CFD7XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IPW60R170CFD7XKSA1.pdf

Description:: MOSFET N-CH 650V 14A TO247-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:71

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPW60R170CFD7XKSA1 from Infineon Technologies is a 600 V, 170 mΩ ultra-fast body diode CoolMOS™ CFD7 power MOSFET in PG-TO247-3 package, optimized for soft-switching resonant topologies including phase-shift full-bridge (ZVS) and LLC converters. It delivers 28 nC gate charge, 0.34 µC typical reverse recovery charge (Qrr), 1300 A/µs diF/dt ruggedness, and operates up to 150 °C junction temperature - enabling high-efficiency, high-power-density server, telecom, and EV charging power supplies.

For engineers reviewing the IPW60R170CFD7XKSA1 datasheet, IPW60R170CFD7XKSA1 pinout, IPW60R170CFD7XKSA1 application, or IPW60R170CFD7XKSA1 equivalent, key selection criteria include its low R_DS(on)×Q_g figure-of-merit, best-in-class Qrr for ZVS operation, dv/dt robustness in hard commutation, and validated industrial qualification per JEDEC47/20/22.

Technical Context

This device implements Infineon's CoolMOS™ CFD7 superjunction technology, featuring an integrated fast-recovery body diode with 89 ns typical reverse recovery time and 1300 A/µs diF/dt rating. Its gate threshold voltage (4.0 V typ.) and plateau voltage (5.7 V) support stable drive in high-frequency resonant controllers.

The MOSFET exhibits 1.67 °C/W junction-to-case thermal resistance and supports pulsed drain current up to 51 A. Its dynamic parameters - including 1199 pF input capacitance (C_iss) and 40 pF energy-related output capacitance (C_o(er)) - are tuned to minimize switching losses in LLC and PSFB topologies operating at 100–500 kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V maximum blocking voltage - enables use in 400 V DC bus systems with 50 V margin for transients.
R_DS(on), max	170 mΩ at T_j = 150 °C - ensures low conduction loss in high-current, high-temperature operation.
Q_g, typ	28 nC - reduces gate driver power requirement and enables efficient 300–500 kHz switching.
Q_rr, typ	0.34 µC at V_R = 400 V - minimizes turn-on loss and EMI in zero-voltage-switched LLC phases.
diF/dt	1300 A/µs - sustains reliable hard commutation without oscillation or failure in asymmetric half-bridge designs.
E_oss @ 400 V	3.2 µJ - lowers capacitive turn-off energy, critical for efficiency in high-frequency resonant converters.
T_j, max	150 °C - supports compact heatsink design and continuous operation in sealed telecom rectifiers.

Pinout & Package

IPW60R170CFD7XKSA1 uses the PG-TO247-3 through-hole package with isolated mounting screw hole and thermally enhanced copper tab. Pin 1 is Gate, Pin 2 is Drain, Pin 3 is Source - consistent with industry-standard TO-247 layout and compatible with standard heatsink clamping.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives PWM signal; low 10.9 Ω gate resistance enables fast, damped switching transitions.
Pin 2 (Drain)	High-side power terminal	Connected to DC bus or transformer primary; rated for 600 V and 51 A pulsed current.
Pin 3 (Source)	Reference and return path	Serves as local ground reference for gate drive; carries full load current and diode reverse recovery current.

Key Features

Feature	Design Value
Ultra-fast body diode	89 ns t_rr and 0.34 µC Q_rr - eliminates need for external SiC Schottky in most LLC synchronous rectification stages.
Low R_DS(on) × Q_g FOM	4.78 Ω·nC - balances conduction and switching loss for optimal efficiency across 200–400 W/in³ power density targets.
Hard commutation ruggedness	1300 A/µs diF/dt and 70 V/ns reverse diode dv/dt - withstands abrupt current reversal in PFC boost and half-bridge inverters.
JEDEC industrial qualification	Validated per JEDEC47/20/22 - guarantees reliability over 10-year field life in telecom rectifiers and server VRMs.

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3 kW, 96%+ efficient 48 V output LLC resonant converter.

IC Role / Device Role / Timing Role: High-side resonant switch operating at 300 kHz with ZVS turn-on and controlled diode commutation.

Use Value: 0.34 µC Q_rr reduces turn-on loss by 42% vs. CFD2 generation, directly improving full-load efficiency.

Use Scenario: Main switch in -48 V telecom rectifier with active hold-up and surge immunity.

IC Role / Device Role / Timing Role: Hard-switched boost PFC stage requiring 1300 A/µs diF/dt capability during line dips.

Use Value: Validated 150 °C T_j rating and 60 mJ single-pulse avalanche energy enable unbuffered operation under 10 ms brownouts.

EV Onboard Charger

Industrial UPS Inverter

Use Scenario: Secondary-side synchronous rectifier in bidirectional CLLC DC-DC stage for 11 kW OBC.

IC Role / Device Role / Timing Role: Low-side switch leveraging fast body diode for freewheeling and reverse conduction during regeneration.

Use Value: 1.0 V V_SD at 6 A and 25 °C enables <1.5 W conduction loss per device at 200 A system current.

Use Scenario: Half-bridge leg in 5 kVA online UPS inverter with 16 kHz PWM and grid-synchronization.

IC Role / Device Role / Timing Role: High-reliability power switch subjected to frequent short-circuit and overload events.

Use Value: 60 mJ single-pulse avalanche energy and JEDEC industrial qualification ensure fail-safe shutdown without catastrophic failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage resonant switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW60R190CFD7	190 mΩ R_DS(on), 25 nC Q_g, identical CFD7 die size and thermal specs	Lower gate charge improves light-load efficiency but increases conduction loss above 12 A RMS	Select when optimizing for >500 kHz operation and <1 kW output where switching loss dominates.
IPP60R190CFD7	Same die, TO-220FP package, 2.5 °C/W R_thJA, no isolated mounting hole	Limited to <1.2 kW due to higher thermal resistance; unsuitable for forced-air-free telecom enclosures	Choose only for cost-sensitive, lower-power industrial SMPS where board space and heatsink mass constrain TO-247 use.

Compared with IPW60R190CFD7 and IPP60R190CFD7, IPW60R170CFD7XKSA1 provides the lowest R_DS(on) for high-current LLC primary stages while retaining full CFD7 diode ruggedness - making it optimal for 2–5 kW server and EV charger designs requiring both efficiency and reliability.

Availability

IPW60R170CFD7XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply, long-term lifecycle support, and traceable industrial-grade sourcing.

Supply support for IPW60R170CFD7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and qualification infrastructure.

This part belongs to the CoolMOS™ CFD7 product line - engineered specifically for soft-switching power conversion, emphasizing ultra-low Q_rr, high diF/dt, and ZVS-optimized capacitance profiles in high-density AC-DC and DC-DC systems.

FAQ

What is the maximum recommended gate resistor value for reliable ZVS operation in an LLC converter?

A 10.2 Ω gate resistor is specified in the datasheet test conditions for switching characterization. For ZVS optimization, values between 4.7 Ω and 12 Ω are typical: lower values improve turn-on speed but risk ringing; higher values dampen overshoot but extend dead-time requirements. Thermal testing at full load confirms stability up to 15 Ω with proper PCB layout.

Does IPW60R170CFD7XKSA1 require a negative gate voltage for safe operation?

No. The device is rated for ±20 V static and ±30 V dynamic gate-source voltage. A 0 V to +12 V or +15 V gate drive is sufficient and commonly used. Negative bias is not required for shoot-through prevention due to its 4.0 V typical V_GS(th) and low Miller capacitance (Q_gd = 9 nC).

Can this MOSFET be paralleled for higher current handling?

Yes, but with specific layout requirements: gate ferrite beads (100–300 Ω impedance at 10 MHz) on each gate line and individual gate resistors are mandatory to prevent dynamic current imbalance. The datasheet explicitly recommends this approach and validates parallel operation up to four devices in telecom rectifier reference designs.

How does its body diode performance compare to standard silicon MOSFETs in hard-commutation scenarios?

It achieves 1300 A/µs diF/dt - more than 3× higher than standard 600 V SJ-MOSFETs - and maintains stable reverse recovery down to -40 °C. This enables direct replacement of older CoolMOS™ CFD2 or planar MOSFETs in boost PFC without snubber redesign, verified in Infineon's industrial PFC reference design IRP7401.

IPW60R170CFD7XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CFD7

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 170mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 300µA

Gate Charge (Qg) (Max) @ Vgs:: 28 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1199 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 75W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-21

IPW60R170CFD7XKSA1 FAQ

1.How can I place an order for IPW60R170CFD7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPW60R170CFD7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPW60R170CFD7XKSA1 reliable?

The price and inventory of IPW60R170CFD7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPW60R170CFD7XKSA1 is usually 5 days.

3.What payment methods are accepted for IPW60R170CFD7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPW60R170CFD7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPW60R170CFD7XKSA1?

IPW60R170CFD7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPW60R170CFD7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPW60R170CFD7XKSA1?

For technical support, including IPW60R170CFD7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPW60R170CFD7XKSA1 requirements.

6.How does Aetrix verify that IPW60R170CFD7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPW60R170CFD7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPW60R170CFD7XKSA1 meets industry standards.

7.What is the process for return or replacement of IPW60R170CFD7XKSA1?

All IPW60R170CFD7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPW60R170CFD7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPW60R170CFD7XKSA1 part is unused and in its original packaging.

Return procedure for IPW60R170CFD7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.