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Infineon Technologies IPW60R190P6FKSA1

Part No.:
IPW60R190P6FKSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-247-3
Datasheet:
AetrixIPW60R190P6FKSA1.pdf
Description:
MOSFET N-CH 600V 20.2A TO247-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:10

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Product details

Overview

IPW60R190P6 from Infineon Technologies is a 600 V, 20.2 A (TC = 25°C) superjunction N-channel power MOSFET in TO-247 package, featuring 190 mΩ max RDS(on), 37 nC typical gate charge, and 4.9 µJ Eoss at 400 V. It serves as a high-efficiency primary-side switch in hard-switched and resonant SMPS topologies including PFC and LLC converters for server PSUs and telecom rectifiers.

For engineers reviewing the IPW60R190P6 datasheet, IPW60R190P6 pinout, IPW60R190P6 application, or IPW60R190P6 equivalent, key selection criteria include its 100 V/ns dv/dt ruggedness, 500 A/µs body diode commutation capability, low FOM (RDS(on) × Qg), and industrial-grade JEDEC qualification.

Technical Context

This CoolMOS™ P6 device implements a charge-compensated superjunction structure enabling simultaneous reduction of conduction and switching losses. Its gate threshold voltage (3.5–4.5 V) and plateau voltage (~6.1 V) support robust drive with standard 12 V gate drivers while maintaining noise immunity.

The device delivers 419 mJ single-pulse avalanche energy and supports high-speed commutation with 310 ns reverse recovery time and 4 µC Qrr - critical for ZVS/ZCS operation in resonant converters and reliable hard-switching under transient overloads.

Key Specifications

ParameterValue and Actual Design Meaning
VDS max600 V - rated for 400 V bus applications with 50% margin against line surges in industrial AC-DC systems
RDS(on) max190 mΩ @ Tj = 150°C - enables <2 W conduction loss at 10 A RMS in continuous conduction mode PFC
Qg typ37 nC - reduces gate driver power demand and allows use of low-cost SOT-23 MOSFET drivers
Eoss4.9 µJ @ 400 V - lowers turn-on switching loss and improves light-load efficiency in LLC resonant converters
dv/dt ruggedness100 V/ns - ensures stable operation without spurious turn-on in high-di/dt half-bridge configurations
Body diode dI/dt500 A/µs - supports fast freewheeling in synchronous rectification and bidirectional DC-DC stages
Tj max150 °C - qualified for industrial ambient environments up to 85 °C with derated thermal design

Pinout & Package

IPW60R190P6 uses the TO-247 package with isolated tab (drain-connected). The three leads are arranged linearly: Pin 1 (Gate), Pin 2 (Drain), Pin 3 (Source), with the metal tab electrically connected to Drain.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1GateControl terminal requiring ≤20 V static and ≤30 V dynamic gate-source voltage; low 3.4 Ω internal gate resistance simplifies RC snubber design
Pin 2 / TabDrainMain high-voltage power terminal; tab provides low-inductance, high-current path to heatsink - must be electrically isolated from PCB ground plane
Pin 3SourcePower return and reference node for gate drive; connects to source of upstream driver or current-sense resistor in high-side configuration

Key Features

FeatureDesign Value
Superjunction architectureEnables 600 V rating with RDS(on) competitive with lower-voltage MOSFETs - reduces die size and system footprint by ~30% vs. planar equivalents
Low Eoss and QgReduces total switching loss by ≥25% vs. CoolMOS™ C7 at same RDS(on), directly improving 50–100 kHz hard-switched converter efficiency
High dv/dt ruggednessEliminates need for external gate clamping in bridge-leg layouts operating at >1 MHz edge rates - simplifies layout and reduces BOM count
Industrial qualificationComplies with JEDEC J-STD-020 (MSL 1) and JESD22-A108 - supports reflow assembly and 10-year field reliability in uncontrolled thermal environments

Applications

Server Power SupplyTelecom Rectifier

Use Scenario: Primary-side switch in 3.3 kW front-end PFC + LLC resonant stage for cloud infrastructure servers.

IC Role / Device Role / Timing Role: High-voltage switching element handling 400 V DC bus with ZVS-assisted turn-on and controlled body diode commutation.

Use Value: Achieves >96% full-load efficiency and <65 °C case temperature at 40 °C ambient due to 0.83 °C/W RthJC and low Eoss.

Use Scenario: Main switch in 2 kW telecom -48 V output rectifier with active clamp forward topology.

IC Role / Device Role / Timing Role: Hard-switched 100 kHz power transistor managing 380 V input transients and load-step response.

Use Value: Survives repeated 100 V/ns dv/dt events during line dips without false triggering - eliminates gate protection networks.

LCD TV Backlight InverterIndustrial UPS Inverter

Use Scenario: Half-bridge switch in resonant CCFL backlight inverter driving 1.2 kV lamps.

IC Role / Device Role / Timing Role: High-frequency (60–120 kHz) switching device with fast body diode recovery for lamp ignition phase.

Use Value: 310 ns trr and 25 A IRRM ensure clean zero-crossing transitions and eliminate lamp flicker during dimming.

Use Scenario: Output H-bridge switch in 5 kVA online UPS delivering pure sine wave to medical equipment.

IC Role / Device Role / Timing Role: Bidirectional power switch supporting regenerative braking and battery charging modes.

Use Value: 500 A/µs body diode dI/dt rating enables safe 10 ms overload current handling without latch-up or thermal runaway.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IPW60R190C7Same RDS(on) but 25% lower Qg (28 nC); higher cost; improved Eoss (3.2 µJ)Better suited for >200 kHz resonant designs where gate drive loss dominatesSelect when optimizing for ultra-high-frequency operation and gate driver thermal budget is constrained
STW60N60DM6650 V rating; 180 mΩ RDS(on); 42 nC Qg; no specified dv/dt ratingRequires additional gate clamping in bridge configurations; less rugged under fast transientsConsider only for cost-sensitive, non-critical industrial supplies with conservative layout and filtering

Compared with IPW60R190C7 and STW60N60DM6, the IPW60R190P6 offers optimal balance of ruggedness, ease of drive, and industrial qualification - making it preferred for telecom rectifiers and server PSUs where reliability and layout simplicity are prioritized over marginal high-frequency gains.

Availability

IPW60R190P6 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, LCD TV backlight inverters, and industrial UPS inverters requiring stable component supply across multi-year production cycles.

Supply support for IPW60R190P6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and R&D centers.

The CoolMOS™ P6 series was engineered specifically for high-efficiency, high-reliability AC-DC conversion in datacenter, telecom, and industrial power systems - emphasizing ruggedness, low-loss operation, and simplified drive requirements.

FAQ

What is the maximum continuous drain current for IPW60R190P6 at 100°C case temperature?

The maximum continuous drain current is 12.7 A at TC = 100°C, as specified in Table 2 of the datasheet. This value is thermally limited by junction-to-case thermal resistance (0.83 °C/W) and maximum junction temperature (150 °C), not by package current rating alone.

Can IPW60R190P6 be used in parallel configurations?

Yes, but Infineon recommends using ferrite beads on individual gate lines or separate totem-pole drivers to ensure balanced dynamic current sharing. The device's matched threshold voltage and low gate resistance support paralleling, though layout symmetry and gate loop inductance must be tightly controlled.

Does IPW60R190P6 have an integrated body diode, and what are its key ratings?

Yes - it features a fast-recovery epitaxial body diode rated for 17.5 A continuous forward current and 57 A pulsed current. Key parameters include 0.9 V forward voltage at 9.5 A, 310 ns reverse recovery time, 4 µC Qrr, and 500 A/µs commutation dI/dt - validated per JEDEC test conditions.

Is IPW60R190P6 RoHS and halogen-free compliant?

Yes - it uses Pb-free plating and halogen-free mold compound, fully compliant with RoHS Directive 2011/65/EU and JEDEC standards J-STD-020 (MSL 1) and JESD22-A108 for industrial-grade reliability and environmental safety.

IPW60R190P6FKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™ P6
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
190mOhm @ 7.6A, 10V
Vgs(th) (Max) @ Id:
4.5V @ 630µ
Gate Charge (Qg) (Max) @ Vgs:
11 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1750 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
151W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO247-3

IPW60R190P6FKSA1 FAQ

1.How can I place an order for IPW60R190P6FKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPW60R190P6FKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPW60R190P6FKSA1 reliable?

The price and inventory of IPW60R190P6FKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPW60R190P6FKSA1 is usually 5 days.

3.What payment methods are accepted for IPW60R190P6FKSA1?

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4.How is shipping managed for IPW60R190P6FKSA1?

IPW60R190P6FKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPW60R190P6FKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPW60R190P6FKSA1?

For technical support, including IPW60R190P6FKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPW60R190P6FKSA1 requirements.

6.How does Aetrix verify that IPW60R190P6FKSA1 is sourced from the original manufacturer or authorized distributors?

All IPW60R190P6FKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPW60R190P6FKSA1 meets industry standards.

7.What is the process for return or replacement of IPW60R190P6FKSA1?

All IPW60R190P6FKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPW60R190P6FKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPW60R190P6FKSA1 part is unused and in its original packaging.

Return procedure for IPW60R190P6FKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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