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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPW60R199CPFKSA1

Name: IPW60R199CPFKSA1
Brand: Infineon Technologies
SKU: IPW60R199CPFKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPW60R199CPFKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IPW60R199CPFKSA1.pdf

Description:: MOSFET N-CH 600V 16A TO247-3

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Product details

Overview

IPW60R199CPFKSA1 from Infineon Technologies is a 650 V, 0.199 Ω R_DS(on) CoolMOS® C-series power MOSFET in PG-TO247-3 package, optimized for hard-switching server and telecom SMPS topologies. It delivers 9.9 A continuous drain current at T_C = 25 °C, 33 nC total gate charge, and 436 mJ single-pulse avalanche energy, enabling high-efficiency, high-density 1–3 kW AC/DC converters.

For engineers reviewing the IPW60R199CPFKSA1 datasheet, IPW60R199CPFKSA1 pinout, IPW60R199CPFKSA1 application, or IPW60R199CPFKSA1 equivalent, key selection criteria include R_DS(on) × Q_g figure-of-merit, dv/dt ruggedness (480 V/ns), peak current capability (51 A pulsed), and JEDEC-qualified reliability for industrial power supplies.

Technical Context

This device implements a superjunction MOSFET architecture with optimized charge compensation for reduced conduction and switching losses. Its 0.9 K/W junction-to-case thermal resistance and 650 V V_(BR)DSS support operation in 400 V DC-link PFC and LLC resonant stages.

The integrated fast-recovery body diode exhibits 340 ns reverse recovery time and 5.5 µC Q_rr, enabling robust synchronous rectification and ZVS transitions in high-frequency half-bridge configurations without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	650 V - Withstands 400 V DC-link with 25% margin in telecom rectifiers
R_DS(on), max	0.199 Ω @ T_j = 25 °C - Enables <1.5 W conduction loss at 9.9 A in TO247 heatsink
Q_g, typ	33 nC - Reduces gate drive power requirement for 100–300 kHz switching
E_AS	436 mJ - Supports single-pulse inductive turn-off without snubber in 1.5 kW PFC
dv/dt ruggedness	480 V/ns - Sustains fast voltage transients in hard-switched bridge legs
t_rr	340 ns - Limits diode commutation loss during ZVS transitions
R_thJC	0.9 K/W - Allows 100 W dissipation with ≤90 °C case temperature rise

Pinout & Package

PG-TO247-3 package with isolated tab (drain-connected), standard through-hole mounting, RoHS-compliant lead plating, and 60 Ncm M3 screw torque rating.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main power output terminal	Electrically connected to metal tab; requires insulated mounting in non-isolated designs
Source	Power return and reference node	Low-inductance source path critical for gate loop stability in high-dI/dt operation
Gate	Control input	High-impedance node requiring low-Z driver and local 100 nF decoupling to suppress oscillation

Key Features

Feature	Design Value
Ultra-low R_DS(on) × Q_g	6.56 Ω·nC - Directly improves efficiency in 100–200 kHz hard-switched PFC stages
Extreme dv/dt rating	480 V/ns - Eliminates need for external dv/dt snubbers in high-speed bridge designs
JEDEC-qualified reliability	Complies with J-STD-20/JESD22 - Validated for 10-year field life in server PSU applications
Integrated fast body diode	t_rr = 340 ns, Q_rr = 5.5 µC - Enables zero-voltage switching in LLC half-bridges without discrete diodes

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: 2 kW front-end PFC stage operating at 100 kHz with 400 V DC-link.

IC Role / Device Role / Timing Role: High-side switch in boost converter topology handling full line current.

Use Value: 0.199 Ω R_DS(on) reduces conduction loss by 22% vs. prior-generation 600 V MOSFETs, improving system efficiency from 95.1% to 95.8%.

Use Scenario: 3 kW telecom rectifier with active clamp forward topology.

IC Role / Device Role / Timing Role: Main switch in primary-side clamped circuit with 150 kHz switching frequency.

Use Value: 436 mJ E_AS withstands repetitive inductive turn-off stress without derating, extending MTBF beyond 200,000 hours.

Industrial UPS Inverter

EV Charger Auxiliary Supply

Use Scenario: 5 kVA online UPS inverter stage with 16 kHz PWM modulation.

IC Role / Device Role / Timing Role: Low-side switch in three-phase IGBT/MOSFET hybrid inverter leg.

Use Value: 480 V/ns dv/dt ruggedness prevents false triggering during bus transients, eliminating gate driver protection circuitry.

Use Scenario: 1.2 kW auxiliary power supply in liquid-cooled EV DC fast charger.

IC Role / Device Role / Timing Role: Primary switch in flyback converter powering control board and cooling fans.

Use Value: 0.9 K/W R_thJC enables 100% load operation at 70 °C ambient with passive heatsinking only.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW62N65M5	R_DS(on) = 0.20 Ω, Q_g = 42 nC, E_AS = 390 mJ	Higher gate charge increases driver loss; lower E_AS limits unclamped inductive switching margin	Preferable where gate drive simplicity outweighs peak efficiency gain
IXFH32N65X2	R_DS(on) = 0.195 Ω, Q_g = 52 nC, t_rr = 280 ns	Lower R_DS(on) but higher Q_g degrades high-frequency efficiency; faster t_rr reduces diode loss but increases EMI risk	Preferred when diode recovery speed dominates over gate drive loss in ZVS designs

Compared with STW62N65M5 and IXFH32N65X2, IPW60R199CPFKSA1 offers the lowest R_DS(on) × Q_g product (6.56 Ω·nC), making it optimal for efficiency-critical 100–200 kHz hard-switched PFC and LLC converters where thermal headroom is constrained.

Availability

IPW60R199CPFKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial UPS inverters requiring stable component supply, long-term lifecycle support, and JEDEC-qualified reliability.

Supply support for IPW60R199CPFKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The CoolMOS® C-series targets high-efficiency, high-power-density AC/DC conversion in server, telecom, and industrial power supplies using optimized superjunction technology.

FAQ

What is the maximum continuous drain current at T_C = 100 °C?

The IPW60R199CPFKSA1 supports 10 A continuous drain current at T_C = 100 °C per the datasheet's derating curve. This value reflects thermal limitation of the PG-TO247-3 package, not device intrinsic capability, and assumes proper heatsinking with ≤0.9 K/W thermal resistance from junction to case.

Is the body diode suitable for synchronous rectification?

Yes - its 340 ns reverse recovery time and 5.5 µC Q_rr enable use in synchronous rectification within LLC resonant converters up to 300 kHz, provided gate timing accounts for diode conduction delay and reverse recovery tail current to avoid shoot-through.

Does this part require a negative gate turn-off voltage?

No - the gate threshold voltage is 2.5–3.5 V, and the device is fully enhanced at +10 V. Negative turn-off voltage is not required; however, a –5 V to –10 V gate drive improves noise immunity and ensures robust turn-off under high dv/dt conditions in bridge configurations.

What is the safe operating area (SOA) limitation at 100 µs pulse width?

At 100 µs pulse width and T_j = 25 °C, the SOA limit is 16 A at 400 V V_DS. This is defined by the device's transient thermal impedance and maximum power dissipation, not secondary breakdown - consistent with superjunction MOSFET behavior and validated per JEDEC JESD22-A114.

IPW60R199CPFKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 199mOhm @ 9.9A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 660µA

Gate Charge (Qg) (Max) @ Vgs:: 43 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1520 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 139W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-1

IPW60R199CPFKSA1 FAQ

1.How can I place an order for IPW60R199CPFKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPW60R199CPFKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPW60R199CPFKSA1 reliable?

The price and inventory of IPW60R199CPFKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPW60R199CPFKSA1 is usually 5 days.

3.What payment methods are accepted for IPW60R199CPFKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPW60R199CPFKSA1 transactions.

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4.How is shipping managed for IPW60R199CPFKSA1?

IPW60R199CPFKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPW60R199CPFKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPW60R199CPFKSA1?

For technical support, including IPW60R199CPFKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPW60R199CPFKSA1 requirements.

6.How does Aetrix verify that IPW60R199CPFKSA1 is sourced from the original manufacturer or authorized distributors?

All IPW60R199CPFKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPW60R199CPFKSA1 meets industry standards.

7.What is the process for return or replacement of IPW60R199CPFKSA1?

All IPW60R199CPFKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPW60R199CPFKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPW60R199CPFKSA1 part is unused and in its original packaging.

Return procedure for IPW60R199CPFKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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