Infineon Technologies IPW60R330P6FKSA1

Overview

IPW60R330P6 from Infineon Technologies is a 600 V, 330 mΩ superjunction N-channel power MOSFET in TO-247 package, optimized for high-efficiency hard-switching and resonant PFC and PWM stages. It delivers 12 A continuous drain current at T_C = 25°C, 22 nC total gate charge, and 3 µJ output energy (E_oss) at 400 V - enabling compact, cooler-running server PSUs and telecom rectifiers.

For engineers reviewing the IPW60R330P6 datasheet, IPW60R330P6 pinout, IPW60R330P6 application, or IPW60R330P6 equivalent, key selection criteria include R_DS(on) vs. temperature stability, dv/dt ruggedness (100 V/ns), body diode commutation capability (500 A/µs), and thermal resistance (1.35 °C/W junction-to-case) in high-power industrial switching designs.

Technical Context

This CoolMOS™ P6 device implements an optimized superjunction cell structure with reduced specific on-resistance and minimized gate-drain charge (Q_gd = 8 nC), enabling fast, low-loss switching while maintaining robustness against voltage transients. Its 6.1 V gate plateau voltage ensures stable turn-on under varying drive conditions.

The MOSFET features enhanced avalanche ruggedness (E_AS = 247 mJ), high diode dI/dt capability (500 A/µs), and JEDEC industrial-grade qualification (J-STD-20/JESD22). It operates up to 150°C junction temperature and supports parallel operation with gate ferrite bead recommendations.

Key Specifications

Pinout & Package

IPW60R330P6 uses the standard TO-247 package with isolated tab (drain-connected). The three leads are arranged linearly: Pin 1 (Gate), Pin 2 (Drain), Pin 3 (Source), with the metal tab electrically tied to Drain.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPW60R330P6, IPW60R380P6 trades 15% higher R_DS(on) for 14% lower Q_g, favoring high-frequency PFC; STW62N60M2 offers marginally lower R_DS(on) but doubles E_oss, increasing turn-off loss and thermal stress in resonant converters.

Availability

IPW60R330P6 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, LCD TV power boards, and UPS inverter stages requiring stable component supply, long-term industrial lifecycle support, and traceable sourcing.

Supply support for IPW60R330P6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with over 30 years of high-voltage MOSFET innovation.

The CoolMOS™ P6 series was engineered specifically for high-efficiency, high-power-density AC/DC conversion - targeting 96%+ efficiency in 1–5 kW server, telecom, and industrial power supplies operating at 100–500 kHz.

FAQ

What is the maximum continuous drain current for IPW60R330P6 at 100°C case temperature?

The maximum continuous drain current is 7.6 A at T_C = 100°C, as specified in Table 2 of the datasheet. This value accounts for thermal derating due to increased R_DS(on) and reduced safe operating area at elevated temperatures, and must be used with appropriate heatsinking to maintain T_j ≤ 150°C.

Does IPW60R330P6 require a negative gate voltage for reliable turn-off?

No - the device is fully compatible with 0 V to +15 V gate drive. Its gate threshold voltage (V_GS(th)) ranges from 3.5 V to 4.5 V, and it exhibits stable turn-off behavior with 0 V gate bias. A negative voltage is not required, though –5 V may be used to improve noise immunity in high-dv/dt environments.

Can IPW60R330P6 be paralleled with identical units without external gate resistors?

No - the datasheet explicitly recommends using individual ferrite beads on each gate or separate totem-pole drivers to ensure balanced dynamic current sharing. Without such measures, mismatched propagation delays and parasitic inductance can cause current imbalance and thermal runaway during switching transitions.

Is the TO-247 package of IPW60R330P6 lead-free and RoHS-compliant?

Yes - the device uses Pb-free plating and halogen-free mold compound, and is qualified for industrial-grade applications per JEDEC standards J-STD-20 and JESD22. Full compliance documentation, including RoHS and REACH declarations, is available from Infineon's official product page and Aetrix Electronics' material compliance portal.