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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPW65R037C6FKSA1

Name: IPW65R037C6FKSA1
Brand: Infineon Technologies
SKU: IPW65R037C6FKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPW65R037C6FKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IPW65R037C6FKSA1.pdf

Description:: MOSFET N-CH 650V 83.2A TO247-3

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Product details

Overview

IPW65R037C6FKSA1 from Infineon Technologies is a 650 V, 83.2 A (T_C = 25°C) superjunction N-channel power MOSFET in TO-247 package, featuring R_DS(on) = 0.037 Ω (max), Q_g = 330 nC (typ), and E_oss = 24.5 µJ @ 400 V. It serves as a high-efficiency primary-side switch in hard-switched and resonant SMPS topologies for industrial and telecom power supplies.

For engineers reviewing the IPW65R037C6FKSA1 datasheet, IPW65R037C6FKSA1 pinout, IPW65R037C6FKSA1 application, or IPW65R037C6FKSA1 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), high commutation ruggedness (di/dt = 300 A/µs), and industrial-grade qualification per JEDEC J-STD-020/JESD22.

Technical Context

This CoolMOS™ C6 device implements a charge-compensated superjunction structure enabling simultaneous reduction of conduction and switching losses. Its gate threshold voltage (V_GS(th) = 2.5–3.5 V) and plateau voltage (V_GP = 5.5 V) support robust gate drive with standard 12 V controllers.

The MOSFET delivers high dv/dt ruggedness (50 V/ns) and reverse diode performance with t_rr = 1020 ns and Q_rr = 36 µC, enabling reliable operation in PFC and LLC half-bridge stages without external snubbers in many designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - rated blocking voltage for primary-side switching in 400 V DC bus applications
R_DS(on), max	0.037 Ω - enables <83 A continuous current at T_C = 25°C with low conduction loss
Q_g, typ	330 nC - determines gate drive power and switching speed in 100–500 kHz converters
E_oss @ 400 V	24.5 µJ - quantifies turn-off energy loss; critical for ZVS/ZCS soft-switching efficiency
di/dt rating	300 A/µs - supports fast current transitions in synchronous rectification and resonant circuits
T_j max	150 °C - defines thermal derating envelope for industrial ambient conditions up to 85 °C
R_thJC	0.25 °C/W - enables 500 W power dissipation with modest heatsinking in TO-247 mounting

Pinout & Package

IPW65R037C6FKSA1 uses the standard TO-247 package with isolated tab (drain-connected). Pin 1 is Gate, Pin 2 is Drain, Pin 3 is Source - confirmed per Infineon PG-TO247 outline and datasheet Figure 13.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control electrode	Receives 10 V gate drive; low R_G = 0.7 Ω minimizes ringing risk
Pin 2 (Drain)	High-voltage output terminal	Connected to heatsink; electrically tied to drain metallization and package tab
Pin 3 (Source)	Power return and reference node	Serves as local ground reference for gate driver; carries full load current

Key Features

Feature	Design Value
Low R_DS(on) × Q_g figure-of-merit	12.21 Ω·nC - reduces total switching + conduction loss in 100–300 kHz SMPS
High commutation ruggedness	300 A/µs di/dt rating - withstands fast current reversal in PFC boost diodes and LLC resonant tanks
Industrial-grade reliability	Qualified per JEDEC J-STD-020 (reflow) and JESD22 (HTOL, TC, HAST) - suitable for 10+ year field life
Halogen-free & Pb-free construction	RoHS-compliant plating and mold compound - meets IPC-J-STD-609 and EU Directive 2011/65/EU

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3 kW, 94% efficient 48 V telecom rectifier with active clamp forward topology.

IC Role / Device Role / Timing Role: High-voltage switching element handling 400 V DC input, switching at 200 kHz with zero-voltage turn-on.

Use Value: Low E_oss (24.5 µJ) and R_DS(on) (0.037 Ω) reduce thermal stress and enable compact heatsink design.

Use Scenario: Boost switch in front-end PFC stage of 1 RU server PSU operating at 65 kHz.

IC Role / Device Role / Timing Role: Unidirectional high-current switch controlling inductor current in continuous conduction mode (CCM).

Use Value: 300 A/µs di/dt rating ensures robust body diode commutation during zero-crossing events.

Solar Inverter DC-DC Stage

Industrial UPS Inverter

Use Scenario: Isolated DC-DC converter in string-level solar optimizer, stepping 60–150 V PV input to 12 V control rail.

IC Role / Device Role / Timing Role: Primary-side switch in flyback or active-clamp forward topology with variable duty cycle.

Use Value: 150 °C max junction temperature and 0.25 °C/W R_thJC support operation in unventilated enclosures up to 70 °C ambient.

Use Scenario: Half-bridge leg in 5 kVA online UPS inverter stage delivering 230 V AC output.

IC Role / Device Role / Timing Role: High-reliability switching device in hard-switched H-bridge with 50 Hz fundamental and 10 kHz PWM carrier.

Use Value: 50 V/ns dv/dt ruggedness prevents false turn-on during high-slew-rate bus transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW65N60DM6	R_DS(on) = 0.038 Ω, Q_g = 320 nC, E_oss = 27 µJ @ 400 V	Lower di/dt rating (220 A/µs); less suited for high-frequency PFC	Preferable where lower gate charge reduces driver complexity, but requires snubber in fast-di/dt layouts
IXFH60N60X3	R_DS(on) = 0.032 Ω, Q_g = 370 nC, E_oss = 31 µJ @ 400 V	Higher E_oss increases turn-off loss in ZVS designs above 250 kHz	Better for conduction-limited 50–100 kHz applications; avoid in >200 kHz resonant converters

Compared with STW65N60DM6 and IXFH60N60X3, IPW65R037C6FKSA1 offers the best balance of low E_oss, high di/dt capability, and industrial qualification-making it optimal for high-efficiency, high-reliability 100–300 kHz SMPS where both switching and conduction losses must be minimized.

Availability

IPW65R037C6FKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, solar DC-DC converters, and industrial UPS inverters requiring stable component supply and long-term lifecycle support.

Supply support for IPW65R037C6FKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The CoolMOS™ C6 series was engineered specifically for high-efficiency, high-power-density switched-mode power supplies in industrial, telecom, and renewable energy systems-emphasizing low-loss operation across wide load and frequency ranges.

FAQ

What is the maximum continuous drain current for IPW65R037C6FKSA1 at 100°C case temperature?

The maximum continuous drain current is 52.6 A at T_C = 100°C, as specified in Table 2 of the Rev. 2.0 datasheet. This value is thermally limited by junction-to-case thermal resistance (0.25 °C/W) and maximum junction temperature (150°C), not by package current-carrying capacity alone.

Is IPW65R037C6FKSA1 suitable for paralleling in high-current designs?

Yes, but with gate ferrite beads or individual totem-pole drivers recommended per datasheet Section 1 footnote. The device's matched threshold voltage and low gate resistance (0.7 Ω) support balanced current sharing, though layout symmetry and gate loop inductance must be tightly controlled to prevent oscillation.

Does IPW65R037C6FKSA1 have avalanche energy rating?

Yes: single-pulse avalanche energy E_AS is 2185 mJ (I_D = 14.4 A, V_DD = 50 V), and repetitive avalanche energy E_AR is 3.31 mJ under identical test conditions. These ratings validate robustness against inductive switching transients in hard-switched topologies.

What is the typical reverse recovery charge (Q_rr) of the integrated body diode?

The typical reverse recovery charge is 36 µC, measured at V_DD = 400 V, I_F = 49.6 A, and di/dt = 100 A/µs (Table 7). This value directly impacts commutation loss in synchronous rectification and PFC boost stages, especially when body diode conduction occurs.

IPW65R037C6FKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ C6

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 83.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 37mOhm @ 33.1A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 3.3mA

Gate Charge (Qg) (Max) @ Vgs:: 330 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7240 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 500W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3

IPW65R037C6FKSA1 FAQ

1.How can I place an order for IPW65R037C6FKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPW65R037C6FKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPW65R037C6FKSA1 reliable?

The price and inventory of IPW65R037C6FKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPW65R037C6FKSA1 is usually 5 days.

3.What payment methods are accepted for IPW65R037C6FKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPW65R037C6FKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPW65R037C6FKSA1?

IPW65R037C6FKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPW65R037C6FKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPW65R037C6FKSA1?

For technical support, including IPW65R037C6FKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPW65R037C6FKSA1 requirements.

6.How does Aetrix verify that IPW65R037C6FKSA1 is sourced from the original manufacturer or authorized distributors?

All IPW65R037C6FKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPW65R037C6FKSA1 meets industry standards.

7.What is the process for return or replacement of IPW65R037C6FKSA1?

All IPW65R037C6FKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPW65R037C6FKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPW65R037C6FKSA1 part is unused and in its original packaging.

Return procedure for IPW65R037C6FKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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