Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPW65R041CFDFKSA1

Name: IPW65R041CFDFKSA1
Brand: Infineon Technologies
SKU: IPW65R041CFDFKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPW65R041CFDFKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IPW65R041CFDFKSA1.pdf

Description:: MOSFET N-CH 650V 68.5A TO247-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:9,056

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPW65R041CFDFKSA1 from Infineon Technologies is a 650 V, 68.5 A (T_C = 25°C) superjunction N-channel power MOSFET in TO-247 package, featuring R_DS(on) = 0.041 Ω (max), Q_g = 300 nC (typ), and ultra-fast body diode with t_rr = 250 ns - engineered for high-efficiency resonant switching in server PSUs and telecom rectifiers.

For engineers reviewing the IPW65R041CFDFKSA1 datasheet, IPW65R041CFDFKSA1 pinout, IPW65R041CFDFKSA1 application, or IPW65R041CFDFKSA1 equivalent, key selection criteria include commutation ruggedness (di/dt = 900 A/µs), E_oss = 22.5 µJ @ 400 V, and industrial-grade JEDEC qualification per J-STD-20/JESD22.

Technical Context

This CoolMOS™ CFD2 device implements a charge-compensated superjunction structure enabling simultaneous low conduction loss (R_DS(on) × Q_g FOM = 12.3 Ω·nC) and fast, soft reverse recovery (Q_rr = 1.9 µC, I_rrm = 15 A). Its gate threshold voltage (V_GS(th) = 3.5–4.5 V) ensures stable turn-on under noisy industrial bus conditions.

The integrated body diode delivers 900 A/µs commutation di/dt capability and 50 V/ns dv/dt ruggedness - critical for ZVS/ZCS operation in LLC resonant converters and phase-shifted full-bridge topologies where hard-switching stress must be minimized.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - supports 400 V DC-link operation with 1.6× safety margin for telecom/server applications.
R_DS(on), max	0.041 Ω @ T_J = 25°C - enables <1.4 W conduction loss at 68.5 A, reducing heatsink size in high-power SMPS.
Q_g, typ	300 nC - determines gate drive power requirement; compatible with standard 1–2 A peak gate drivers.
E_oss @ 400 V	22.5 µJ - directly reduces turn-off switching loss in high-frequency resonant stages (>100 kHz).
t_rr	250 ns - enables clean zero-current switching transitions without voltage overshoot or oscillation.
di/dt (body diode)	900 A/µs - sustains rapid current reversal during LLC resonant tank commutation without failure.
R_thJC	0.25 °C/W - allows 500 W power dissipation at T_C = 25°C, supporting compact thermal design in TO-247 mounting.

Pinout & Package

IPW65R041CFDFKSA1 uses the standard TO-247 package with isolated tab (drain-connected), optimized for high-current PCB mounting and heatsink interface. Pin numbering follows JEDEC TO-247 outline: pin 1 = gate, pin 2 = drain, pin 3 = source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives 10 V logic-level drive; gate resistance R_G = 0.7 Ω enables predictable switching timing.
Pin 2 (Drain)	High-voltage output node	Connected to internal die backside; electrically tied to metal tab - requires isolation from heatsink unless floating.
Pin 3 (Source)	Reference and return path	Serves as common reference for gate drive and current sensing; low-inductance layout essential for di/dt stability.

Key Features

Feature	Design Value
Ultra-fast body diode	t_rr = 250 ns, Q_rr = 1.9 µC - eliminates need for external SiC/Schottky anti-parallel diodes in resonant half-bridges.
High commutation ruggedness	di/dt = 900 A/µs, dv/dt = 50 V/ns - withstands abrupt current reversal in LLC tank without latch-up or avalanche failure.
Low figure-of-merit	R_DS(on) × Q_g = 12.3 Ω·nC - balances conduction and switching losses for optimal efficiency at 100–300 kHz.
Industrial qualification	JEDEC J-STD-20 & JESD22 compliant - validated for 150°C junction operation and reflow soldering up to 260°C.

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3 kW LLC resonant converter for 48 V intermediate bus generation.

IC Role / Device Role / Timing Role: High-side switching element operating at 200 kHz with ZVS turn-on and soft-recovery turn-off.

Use Value: Enables >96% full-load efficiency by minimizing E_oss-dominated turn-off loss and eliminating snubber circuits.

Use Scenario: Active clamp forward or phase-shifted full-bridge stage in -48 V telecom rectifier systems.

IC Role / Device Role / Timing Role: Main power switch handling 400 V DC input and delivering regulated 54 V output.

Use Value: Supports 900 A/µs di/dt during clamp discharge, preventing secondary-side voltage spikes and transformer saturation.

LCD TV Backlight Inverter

Solar Microinverter

Use Scenario: Half-bridge driver in resonant inverter powering CCFL or LED backlight arrays.

IC Role / Device Role / Timing Role: Fast-switching primary transistor with integrated body diode conducting freewheeling current.

Use Value: Eliminates external diode and reduces BOM count while maintaining soft-switching across 50–200 Hz dimming range.

Use Scenario: DC-DC boost stage in single-phase microinverter converting PV panel output to 400 V DC link.

IC Role / Device Role / Timing Role: High-voltage switch managing 600 V transients and 15 A peak input current.

Use Value: Withstands 700 V surge rating and delivers 22.5 µJ E_oss for efficient MPPT tracking at variable switching frequencies.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW65N60DM2	R_DS(on) = 0.038 Ω, Q_g = 260 nC, t_rr = 320 ns - lower gate charge but slower diode recovery.	Less suitable for high-di/dt LLC tanks; requires snubber in >150 kHz designs.	Prefer when gate drive power budget is tight and diode softness is secondary.
IXFH60N60X3	R_DS(on) = 0.039 Ω, Q_g = 340 nC, no specified di/dt rating - higher drive loss, uncharacterized body diode robustness.	Not recommended for resonant topologies requiring guaranteed 900 A/µs commutation.	Select only for hard-switched PFC or non-resonant converters where diode speed is irrelevant.

Compared with STW65N60DM2 and IXFH60N60X3, IPW65R041CFDFKSA1 uniquely combines sub-250 ns t_rr, 900 A/µs di/dt, and 22.5 µJ E_oss - making it the only choice for high-reliability, high-frequency resonant converters demanding both efficiency and ruggedness.

Availability

IPW65R041CFDFKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar microinverters requiring stable component supply, long-term industrial qualification, and proven high-temperature reliability.

Supply support for IPW65R041CFDFKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with over 30 years of high-voltage MOSFET innovation.

This device belongs to the CoolMOS™ CFD2 product line - designed specifically for resonant and soft-switching topologies in industrial and telecom power conversion, emphasizing body-diode robustness and low E_oss.

FAQ

What is the maximum continuous drain current at T_C = 100°C?

The maximum continuous drain current is 43.3 A at case temperature 100°C, derated from 68.5 A at 25°C per the thermal resistance R_thJC = 0.25 °C/W and SOA limits. This value assumes proper heatsinking and is validated per JEDEC JESD22-A104 thermal cycling tests.

Is IPW65R041CFDFKSA1 suitable for paralleling in high-current designs?

Yes, but gate drive must be carefully balanced: Infineon recommends ferrite beads on individual gate lines or separate totem-pole drivers to prevent dynamic current imbalance. The device's matched R_DS(on) tolerance (±15%) and low gate resistance (0.7 Ω) support stable parallel operation when layout symmetry and gate loop inductance are controlled.

Does this MOSFET require a negative gate turn-off voltage?

No - the gate threshold voltage range is 3.5–4.5 V, and the device is fully enhanced at V_GS = 10 V. Negative turn-off (e.g., –5 V) is not required for reliable operation, though it may improve noise immunity in high-dv/dt environments; the absolute maximum V_GS is ±20 V (static) and ±30 V (AC).

What is the avalanche energy rating for single-pulse conditions?

The single-pulse avalanche energy rating is 2185 mJ at I_D = 13.7 A and V_DS = 50 V, measured per JEDEC JESD22-A110. This rating reflects capability to absorb inductive switching energy without failure - critical for protection during startup or fault events in offline SMPS.

IPW65R041CFDFKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 68.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 41mOhm @ 33.1A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 3.3mA

Gate Charge (Qg) (Max) @ Vgs:: 300 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 8400 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 500W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-1

IPW65R041CFDFKSA1 FAQ

1.How can I place an order for IPW65R041CFDFKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPW65R041CFDFKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPW65R041CFDFKSA1 reliable?

The price and inventory of IPW65R041CFDFKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPW65R041CFDFKSA1 is usually 5 days.

3.What payment methods are accepted for IPW65R041CFDFKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPW65R041CFDFKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPW65R041CFDFKSA1?

IPW65R041CFDFKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPW65R041CFDFKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPW65R041CFDFKSA1?

For technical support, including IPW65R041CFDFKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPW65R041CFDFKSA1 requirements.

6.How does Aetrix verify that IPW65R041CFDFKSA1 is sourced from the original manufacturer or authorized distributors?

All IPW65R041CFDFKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPW65R041CFDFKSA1 meets industry standards.

7.What is the process for return or replacement of IPW65R041CFDFKSA1?

All IPW65R041CFDFKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPW65R041CFDFKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPW65R041CFDFKSA1 part is unused and in its original packaging.

Return procedure for IPW65R041CFDFKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…