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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPW65R060CFD7XKSA1

Name: IPW65R060CFD7XKSA1
Brand: Infineon Technologies
SKU: IPW65R060CFD7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPW65R060CFD7XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IPW65R060CFD7XKSA1.pdf

Description:: 650V FET COOLMOS TO247

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPW65R060CFD7XKSA1 from Infineon is a 650 V superjunction N-channel CoolMOS™ CFD7 power MOSFET in PG-TO247-3 package, featuring 60 mΩ max R_DS(on), 146 A pulsed drain current, ultra-fast body diode (1300 A/µs di_F/dt), and optimized for zero-voltage switching topologies. It delivers highest efficiency in industrial SMPS, server, telecom, EV charging, and solar inverters.

For engineers reviewing the IPW65R060CFD7XKSA1 datasheet, IPW65R060CFD7XKSA1 pinout, IPW65R060CFD7XKSA1 application, or IPW65R060CFD7XKSA1 equivalent, key selection criteria include hard commutation ruggedness, low temperature coefficient of R_DS(on), E_oss of 9.5 µJ at 400 V, and gate charge total of 68 nC for resonant converter design.

Technical Context

This device implements Infineon's 7th-generation CoolMOS™ SJ technology with integrated fast-recovery body diode, enabling robust operation under high di/dt hard commutation. Its 650 V V_DS rating supports 400 V bus designs with margin, while R_DS(on) remains stable up to 150 °C (0.060 Ω max).

The MOSFET exhibits low effective output capacitance (Co(er) = 119 pF) and optimized gate charge distribution (Q_gd = 21 nC, Q_gs = 19 nC), reducing switching losses in phase-shift full-bridge and LLC converters operating above 100 kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS Rating	650 V - Supports 400 V DC bus with 1.6× voltage margin for transient overvoltage handling
R_DS(on), max	60 mΩ @ T_j = 25°C - Enables low conduction loss in high-current 3–5 kW industrial SMPS
Q_g, typ	68 nC - Optimized for efficient gate drive in ZVS topologies with moderate driver strength
E_oss @ 400 V	9.5 µJ - Reduces turn-on energy loss in resonant converters with soft-switched transitions
di_F/dt, max	1300 A/µs - Ensures reliable body diode commutation without oscillation in hard-switched phases
T_j Range	−55 to +150 °C - Qualified per JEDEC for industrial applications with extended thermal cycling life
R_thJC	0.73 °C/W - Enables high-power dissipation (171 W @ T_C = 25°C) with standard heatsink mounting

Pinout & Package

Package: PG-TO247-3, through-hole, isolated case, screw-mountable (M3/M3.5), thermally optimized for high-power dissipation.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal / internal body diode cathode	Reference node for gate drive; connects to low-side return path and heatsink ground plane
Pin 2 (Gate)	Control electrode	High-impedance input requiring <5.8 Ω gate resistance to damp ringing during ZVS transitions
Pin 3 (Drain)	Main power output / internal body diode anode	High-voltage node tied to bus capacitor; carries full load current and reverse recovery charge

Key Features

Feature	Design Value
Ultra-fast body diode	1300 A/µs di_F/dt rating enables reliable commutation in asymmetric half-bridge and PSFB without snubbers
Low R_DS(on) tempco	R_DS(on) increases only ~1.5× from 25°C to 150°C - improves current sharing in paralleled configurations
Reduced E_oss	9.5 µJ at 400 V - cuts turn-on loss by >30% vs. prior CFD2 generation in LLC resonant tanks
JEDEC industrial qualification	Full qualification per JESD47 - ensures reliability in 10+ year field deployments for telecom and solar systems

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: 3 kW 48 V output front-end using phase-shift full-bridge topology with 100–200 kHz switching frequency.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch with ZVS capability and fast body diode for lagging-leg commutation.

Use Value: Achieves >96.5% peak efficiency and eliminates external anti-parallel diodes due to 156 ns t_rr and 1.72 µC Q_rr.

Use Scenario: 48 V/50 A telecom rectifier module operating in continuous conduction mode with 400 V DC bus.

IC Role / Device Role / Timing Role: Primary-side switching element in dual-active-bridge isolation stage with bidirectional soft switching.

Use Value: Enables 10 KHz–200 KHz variable-frequency control while maintaining <120 V/ns dv/dt ruggedness across full load range.

EV Onboard Charger

Solar String Inverter

Use Scenario: 11 kW bidirectional OBC PFC + DC/DC stage with interleaved totem-pole and PSFB stages.

IC Role / Device Role / Timing Role: High-voltage bridge leg switch in isolated DC/DC converter, handling 400–800 V bus transients.

Use Value: Withstands 700 V V_DS surge rating and provides 171 mJ single-pulse avalanche energy for fault tolerance during grid faults.

Use Scenario: 5 kW string inverter DC/AC stage using unipolar modulation with split-capacitor neutral point clamped topology.

IC Role / Device Role / Timing Role: Upper-leg switching device in NPC inverter leg, managing high dv/dt during neutral-point transitions.

Use Value: Delivers 120 V/ns MOSFET dv/dt ruggedness and 70 V/ns reverse diode dv/dt to suppress shoot-through risk in multi-level topologies.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R041CFD7	Lower R_DS(on) (41 mΩ), higher Q_g (85 nC), same package and voltage rating	Better conduction loss but requires stronger gate driver; less suitable for very high-frequency (>300 kHz) ZVS	Select when thermal budget is tighter and switching frequency ≤150 kHz
IPP65R095C7	Higher R_DS(on) (95 mΩ), lower Q_g (42 nC), same CFD7 die but TO-220FP package	Limited to ≤100 W continuous power; unsuitable for >2 kW designs due to R_thJA = 62 °C/W	Select only for cost-sensitive, space-constrained low-power auxiliary supplies

Compared with IPW65R060CFD7XKSA1, the IPW65R041CFD7 trades higher gate drive loss for lower conduction loss in medium-frequency PSFB, while the IPP65R095C7 sacrifices power density for lower system cost in non-resonant applications.

Availability

IPW65R060CFD7XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply, long-term industrial lifecycle support, and JEDEC-qualified reliability.

Supply support for IPW65R060CFD7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

This part belongs to the CoolMOS™ CFD7 superjunction MOSFET product line, engineered specifically for high-efficiency, high-power-density resonant and soft-switching power conversion systems.

FAQ

What is the maximum recommended gate resistor value for ZVS operation?

A gate resistor of 5.3 Ω is specified in the datasheet for turn-on/turn-off timing measurements. For ZVS topologies, values between 4.7 Ω and 10 Ω are typical; higher values increase turn-on delay but reduce gate ringing. Ferrite beads are recommended on the gate trace when paralleling multiple devices to suppress common-mode oscillation.

Does this MOSFET require external body diode protection in LLC resonant converters?

No. The integrated ultra-fast body diode (t_rr = 156–234 ns, Q_rr = 0.86–1.72 µC) is fully rated for hard commutation in LLC half-bridge configurations. External diodes are unnecessary unless operating beyond 1300 A/µs di_F/dt or at junction temperatures exceeding 150 °C.

How does R_DS(on) change over temperature, and what impact does it have on current sharing?

R_DS(on) increases from 0.052 Ω at 25 °C to 0.060 Ω at 150 °C - a 15% rise - significantly flatter than earlier CoolMOS™ generations. This low temperature coefficient improves current balancing in paralleled configurations, especially under mismatched thermal conditions across multiple devices.

Is this device suitable for use in a totem-pole PFC stage?

Yes. Its 120 V/ns MOSFET dv/dt ruggedness, 1300 A/µs body diode di_F/dt, and 700 V V_DS surge rating make it suitable for both high-side and low-side positions in continuous-conduction-mode totem-pole PFC. Gate plateau voltage of 5.7 V ensures stable Miller immunity during fast voltage transitions.

IPW65R060CFD7XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CFD7

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 36A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 60mOhm @ 16.4A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 860µA

Gate Charge (Qg) (Max) @ Vgs:: 68 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3288 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 171W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3

IPW65R060CFD7XKSA1 FAQ

1.How can I place an order for IPW65R060CFD7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPW65R060CFD7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPW65R060CFD7XKSA1 reliable?

The price and inventory of IPW65R060CFD7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPW65R060CFD7XKSA1 is usually 5 days.

3.What payment methods are accepted for IPW65R060CFD7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPW65R060CFD7XKSA1 transactions.

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4.How is shipping managed for IPW65R060CFD7XKSA1?

IPW65R060CFD7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPW65R060CFD7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPW65R060CFD7XKSA1?

For technical support, including IPW65R060CFD7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPW65R060CFD7XKSA1 requirements.

6.How does Aetrix verify that IPW65R060CFD7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPW65R060CFD7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPW65R060CFD7XKSA1 meets industry standards.

7.What is the process for return or replacement of IPW65R060CFD7XKSA1?

All IPW65R060CFD7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPW65R060CFD7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPW65R060CFD7XKSA1 part is unused and in its original packaging.

Return procedure for IPW65R060CFD7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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