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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPW65R080CFDFKSA1

Name: IPW65R080CFDFKSA1
Brand: Infineon Technologies
SKU: IPW65R080CFDFKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPW65R080CFDFKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IPW65R080CFDFKSA1.pdf

Description:: MOSFET N-CH 700V 43.3A TO247-3

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Product details

Overview

IPW65R080CFDFKSA1 from Infineon Technologies is a 650 V, 43.3 A (T_C = 25°C) superjunction N-channel power MOSFET in the CoolMOS™ CFD2 family, featuring R_DS(on) = 0.08 Ω (max), Q_g = 167 nC (typ), and E_oss = 12.5 µJ @ 400 V. It delivers ultra-fast body diode recovery (t_rr = 180 ns, Q_rr = 1 µC) and high commutation ruggedness (di/dt = 900 A/µs), enabling high-efficiency resonant topologies in server SMPS and telecom rectifiers.

For engineers reviewing the IPW65R080CFDFKSA1 datasheet, IPW65R080CFDFKSA1 pinout, IPW65R080CFDFKSA1 application, or IPW65R080CFDFKSA1 equivalent, key selection criteria include its low R_DS(on)×Q_g figure-of-merit, robust body diode for ZVS/ZCS operation, TO-247 package thermal performance (R_thJC = 0.32 °C/W), and industrial-grade JEDEC qualification.

Technical Context

This device implements Infineon's superjunction (SJ) architecture with charge compensation trenches, enabling high-voltage blocking (650 V) while minimizing conduction and switching losses. Its optimized gate charge profile (Q_gs = 32 nC, Q_gd = 87 nC) supports clean turn-on/turn-off transitions under hard-switched and resonant conditions.

The integrated body diode exhibits controlled reverse recovery with low Q_rr and high di/dt capability-critical for LLC and phase-shifted full-bridge converters where diode commutation stress dominates reliability. Thermal design leverages the TO-247 case's low junction-to-case resistance (0.32 °C/W) for sustained 391 W power dissipation at T_C = 25°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Rated blocking voltage for primary-side switching in 400 V DC bus applications (e.g., telecom rectifiers, solar inverters).
R_DS(on), max	0.08 Ω @ V_GS = 10 V, T_J = 25°C - Enables <1.5 W conduction loss at 43.3 A, reducing heatsink requirements in high-current SMPS.
Q_g, typ	167 nC - Determines gate drive power and switching speed; compatible with standard 1–2 A peak gate drivers in 100–300 kHz designs.
E_oss	12.5 µJ @ 400 V - Low stored output capacitance energy reduces turn-on switching loss in resonant converters.
t_rr	180 ns - Fast, soft reverse recovery minimizes voltage overshoot and EMI during hard-commutation events.
di/dt rating	900 A/µs - Supports reliable operation in high-di/dt LLC transformer reset and synchronous rectification circuits.
P_D, max	391 W @ T_C = 25°C - High power handling enables single-device solutions for 1–3 kW industrial PSUs without paralleling.

Pinout & Package

IPW65R080CFDFKSA1 uses the standard TO-247 package with isolated tab (drain-connected), offering mechanical robustness and thermal efficiency for high-power mounting on heatsinks.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	High-impedance MOS gate requiring <20 V drive; internal gate resistor (R_G = 0.7 Ω) aids EMI control.
Pin 2 (Drain)	High-voltage power terminal	Connected to drain silicon die and metal tab; must be electrically isolated from heatsink unless specified as non-isolated variant.
Pin 3 (Source)	Power return / reference node	Serves as signal ground for gate drive and current sensing; low-inductance layout critical for fast switching stability.

Key Features

Feature	Design Value
Ultra-fast body diode	t_rr = 180 ns, Q_rr = 1 µC - Enables zero-voltage switching in LLC half-bridge without external SiC diodes.
High commutation ruggedness	di/dt = 900 A/µs, E_AS = 1160 mJ - Withstands repeated hard-switching transients in PFC and motor drive inverters.
Low-loss FOM	R_DS(on) × Q_g = 13.4 Ω·nC - Balances conduction and switching loss for optimal efficiency across 100–500 kHz range.
Industrial qualification	JEDEC J-STD-020/JESD22 compliant - Validated for 150°C operation and reflow soldering up to 260°C (10 s), supporting automotive-adjacent industrial use.

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 1–3 kW LLC resonant DC-DC converters powering CPU/GPU VRMs.

IC Role / Device Role / Timing Role: High-frequency (200–350 kHz) resonant switch with ZVS turn-on enabled by ultra-fast body diode.

Use Value: Reduces switching loss by >30% vs. standard SJ MOSFETs, lowering thermal load and enabling fanless operation in dense 1U chassis.

Use Scenario: Active clamp forward or phase-shifted full-bridge stage in -48 V telecom rectifiers.

IC Role / Device Role / Timing Role: Main power switch handling 400 V DC bus with high di/dt during transformer reset.

Use Value: 900 A/µs di/dt rating prevents commutation failure during rapid current reversal, improving system MTBF.

LCD TV Backlight Inverter

Solar Microinverter

Use Scenario: Half-bridge switch driving resonant LC tank for CCFL or LED backlight dimming.

IC Role / Device Role / Timing Role: High-efficiency, low-EMI switching element operating at 50–150 kHz with soft-recovery body diode.

Use Value: 12.5 µJ E_oss cuts turn-on loss by ~40% versus legacy 600 V MOSFETs, extending backlight lifetime.

Use Scenario: DC-AC H-bridge switch in single-phase microinverters converting PV panel output (30–60 V) to 230 V AC.

IC Role / Device Role / Timing Role: 650 V-rated switch handling boosted DC link (up to 450 V) with high dv/dt immunity (50 V/ns).

Use Value: Robust avalanche energy rating (E_AS = 1160 mJ) absorbs transient overvoltage from PV string mismatch or lightning surges.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R099CFD7	R_DS(on) = 0.099 Ω (higher), Q_g = 142 nC (lower), same 650 V rating and TO-247 package.	Slightly lower switching loss but higher conduction loss; better suited for <200 kHz, higher-current continuous duty.	Select when thermal margin favors lower Q_g over R_DS(on), e.g., forced-air-cooled telecom PSUs.
STP65N6F6	650 V, R_DS(on) = 0.075 Ω, Q_g = 170 nC, standard superjunction (no CFD2 body diode enhancement).	Higher Q_rr (~4 µC) and slower t_rr (~350 ns) limit ZVS capability in resonant topologies.	Choose only for hard-switched PFC or non-resonant converters where body diode performance is secondary.

Compared with IPW65R080CFDFKSA1, the IPW65R099CFD7 trades conduction efficiency for reduced gate drive demand, while the STP65N6F6 lacks the CFD2 diode ruggedness needed for reliable LLC operation-making the original part uniquely balanced for high-frequency resonant designs.

Availability

IPW65R080CFDFKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, LCD TV backlight inverters, and solar microinverters requiring stable component supply and long-term industrial-grade availability.

Supply support for IPW65R080CFDFKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and R&D infrastructure.

This device belongs to the CoolMOS™ CFD2 product line, engineered specifically for high-efficiency resonant and soft-switching power conversion in industrial and telecom infrastructure-emphasizing body diode robustness alongside low R_DS(on) and Q_g.

FAQ

What is the maximum junction temperature for continuous operation?

The IPW65R080CFDFKSA1 is rated for continuous operation up to T_J = 150°C, validated per JEDEC JESD22-A108. Derating begins above T_C = 25°C per the R_thJC = 0.32 °C/W thermal resistance curve, with safe operating area defined up to 10 ms pulses at 80°C case temperature.

Is the TO-247 package electrically isolated?

Yes-the TO-247 package used for IPW65R080CFDFKSA1 features an electrically isolated metal tab connected to the drain. This allows direct mounting to a grounded heatsink without additional insulation, provided creepage/clearance requirements are met per IEC 62368-1.

How does the CFD2 body diode improve LLC converter reliability?

The CFD2 body diode achieves t_rr = 180 ns and Q_rr = 1 µC-over 3× faster and 4× lower charge than standard SJ MOSFETs-enabling consistent ZVS across load and line variations, eliminating diode-induced voltage spikes and reducing EMI filter burden.

Can this MOSFET replace older CoolMOS™ CFD variants in existing designs?

Yes-IPW65R080CFDFKSA1 is a direct drop-in replacement for IPW65R080CFD (Rev. 2.3) with identical pinout, R_DS(on), and dynamic parameters. The 'FKSA1' suffix denotes updated packaging and JEDEC-compliant lead finish (Pb-free plating, halogen-free mold compound).

IPW65R080CFDFKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 700 V

Current - Continuous Drain (Id) @ 25°C:: 43.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 80mOhm @ 17.6A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 1.76mA

Gate Charge (Qg) (Max) @ Vgs:: 170 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5030 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 391W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-1

IPW65R080CFDFKSA1 FAQ

1.How can I place an order for IPW65R080CFDFKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPW65R080CFDFKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPW65R080CFDFKSA1 reliable?

The price and inventory of IPW65R080CFDFKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPW65R080CFDFKSA1 is usually 5 days.

3.What payment methods are accepted for IPW65R080CFDFKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPW65R080CFDFKSA1 transactions.

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4.How is shipping managed for IPW65R080CFDFKSA1?

IPW65R080CFDFKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPW65R080CFDFKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPW65R080CFDFKSA1?

For technical support, including IPW65R080CFDFKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPW65R080CFDFKSA1 requirements.

6.How does Aetrix verify that IPW65R080CFDFKSA1 is sourced from the original manufacturer or authorized distributors?

All IPW65R080CFDFKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPW65R080CFDFKSA1 meets industry standards.

7.What is the process for return or replacement of IPW65R080CFDFKSA1?

All IPW65R080CFDFKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPW65R080CFDFKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPW65R080CFDFKSA1 part is unused and in its original packaging.

Return procedure for IPW65R080CFDFKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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