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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPW65R110CFDFKSA1

Name: IPW65R110CFDFKSA1
Brand: Infineon Technologies
SKU: IPW65R110CFDFKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPW65R110CFDFKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IPW65R110CFDFKSA1.pdf

Description:: MOSFET N-CH 650V 31.2A TO247-3

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Product details

Overview

IPW65R110CFDFKSA1 from Infineon Technologies is a 650 V, 31.2 A (T_C = 25°C), 0.11 Ω R_DS(on) CoolMOS™ CFD2 superjunction power MOSFET in TO-247 package, featuring ultra-fast body diode (t_rr = 150 ns, Q_rr = 0.8 µC), high commutation ruggedness (di/dt = 900 A/µs), and low E_oss (9.2 µJ @ 400 V), designed for resonant LLC and ZVS-PWM stages in server PSUs and telecom rectifiers.

For engineers reviewing the IPW65R110CFDFKSA1 datasheet, IPW65R110CFDFKSA1 pinout, IPW65R110CFDFKSA1 application, or IPW65R110CFDFKSA1 equivalent, key selection criteria include body diode recovery performance, R_DS(on)×Q_g figure-of-merit (118 nC total gate charge), thermal resistance (R_thJC = 0.45 °C/W), avalanche energy rating (E_AS = 845 mJ), and industrial-grade JEDEC qualification.

Technical Context

This device implements Infineon's second-generation CoolMOS™ CFD superjunction architecture with optimized charge balancing and integrated fast-recovery body diode. It delivers simultaneous low conduction loss (R_DS(on) = 0.11 Ω max at 25°C) and low switching loss (C_iss = 3240 pF, C_oss,eff = 118 pF), enabling high-frequency operation above 100 kHz in soft-switching topologies.

The MOSFET supports robust hard-switching and synchronous rectification due to its 50 V/ns dv/dt ruggedness, 900 A/µs di/dt capability, and 650 V blocking voltage with guaranteed 700 V surge rating. Gate threshold voltage (V_GS(th) = 3.5–4.5 V) ensures stable turn-on under wide drive conditions while maintaining noise immunity.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS Rating	650 V - Sustains full bridge or LLC primary-side DC bus up to 400 V nominal with 1.7× safety margin for transient overvoltage
R_DS(on), max	0.11 Ω @ 25°C - Enables <3.5 W conduction loss at 19.1 A RMS in 1U server PSU designs
Q_g, typ	118 nC - Determines gate driver current requirement (~1.2 A peak for 100 ns rise time with 10 Ω gate resistor)
E_oss @ 400 V	9.2 µJ - Directly reduces turn-off energy loss in ZVS transitions; enables >95% efficiency at 200 kHz
t_rr	150 ns - Limits reverse recovery overshoot and EMI in phase-shifted full-bridge converters
R_thJC	0.45 °C/W - Allows 277.8 W continuous dissipation at T_C = 25°C; critical for thermally constrained PCB layouts
I_D,pulse	99.6 A - Supports short-term overload tolerance during inrush or fault conditions without latch-up

Pinout & Package

IPW65R110CFDFKSA1 uses the standard TO-247 package (PG-TO247), with isolated mounting hole, screw-compatible footprint, and industry-standard lead form for vertical heatsink attachment. Thermal path is optimized via direct die-to-case copper interface.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives 10 V logic-level drive; 1.3 Ω internal gate resistance limits ringing and simplifies layout
Pin 2 (Drain)	High-voltage power output	Connected to primary-side DC bus; carries full switching current and must be routed with minimum loop area
Pin 3 (Source)	Power return / reference node	Serves as local ground reference for gate driver; requires low-inductance connection to minimize shoot-through risk

Key Features

Feature	Design Value
Ultra-fast body diode	t_rr = 150 ns, Q_rr = 0.8 µC - Eliminates need for external SiC Schottky catch diodes in LLC resonant tanks
High commutation ruggedness	di/dt = 900 A/µs - Withstands abrupt current reversal in phase-shifted full-bridge without oscillation or failure
Low R_DS(on) × Q_g FOM	13.0 Ω·nC - Reduces combined conduction + switching loss, enabling smaller magnetics and heatsinks
Industrial qualification	JEDEC J-STD-020 & JESD22 compliant - Validated for 150°C operating temperature and 1000-cycle thermal cycling
Pb-free & halogen-free	RoHS-compliant plating and mold compound - Meets IPC-J-STD-609A Class 1 and IEC 61249-2-21 requirements

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 2–3 kW half-bridge LLC resonant converter for 1U rack-mount servers.

IC Role / Device Role / Timing Role: High-side switching element synchronized to zero-voltage switching transitions; operates at 150–300 kHz.

Use Value: Low E_oss and fast body diode reduce dead-time losses by 18% versus prior-gen SJ MOSFETs, improving full-load efficiency to ≥96.2%.

Use Scenario: Primary switch in 3.3 kW telecom rectifier with active clamp forward topology.

IC Role / Device Role / Timing Role: Main power switch handling 48 V output regulation under dynamic load steps up to 100 A/µs.

Use Value: 900 A/µs di/dt rating prevents commutation failure during rapid load transients, extending MTBF beyond 500,000 hours.

LCD TV Backlight Inverter

Solar Microinverter

Use Scenario: Resonant half-bridge switch driving CCFL or LED backlight in 55-inch LCD TVs.

IC Role / Device Role / Timing Role: High-frequency (500 kHz) switching transistor in series-resonant tank with tight timing control.

Use Value: 0.45 °C/W R_thJC allows direct heatsink mounting on compact metal chassis, eliminating fan requirement.

Use Scenario: DC-DC boost stage switch in single-phase 300 W solar microinverter interfacing PV panels.

IC Role / Device Role / Timing Role: Unidirectional power switch operating in discontinuous conduction mode (DCM) at 120 kHz.

Use Value: 700 V surge rating accommodates PV open-circuit voltage spikes up to 600 V without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R099CFD	R_DS(on) = 0.099 Ω (lower), Q_g = 132 nC (higher), same package and voltage rating	Better conduction loss but higher gate drive loss; requires stronger gate driver	Select when thermal budget is dominated by conduction loss and gate drive capability is available
STW65N60DM2	600 V rating, R_DS(on) = 0.095 Ω, t_rr = 220 ns, no CFD body diode optimization	Lower voltage margin; unsuitable for 400 V+ DC bus; higher EMI in resonant circuits	Acceptable only in cost-sensitive 600 V applications where diode recovery is not critical

Compared with IPW65R099CFD, this part trades 11% lower R_DS(on) for 12% higher Q_g and reduced diode ruggedness; compared with STW65N60DM2, it provides 50 V higher blocking, 32% faster t_rr, and 44% lower E_oss, making it superior for high-efficiency resonant converters.

Availability

IPW65R110CFDFKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar microinverters requiring stable component supply, long-lifecycle support, and traceable industrial-grade sourcing.

Supply support for IPW65R110CFDFKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and R&D centers across Europe, Asia, and the Americas.

This device belongs to the CoolMOS™ CFD2 product line, engineered specifically for high-frequency resonant and soft-switching power conversion in datacenter, telecom, and renewable energy systems where efficiency, reliability, and thermal density are critical.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies R_G = 1.8 Ω for characterization, but practical designs use 5–15 Ω to balance switching speed and gate oscillation. At 10 Ω, turn-on delay is ~16 ns and rise time ~11 ns; exceeding 22 Ω risks incomplete turn-on during high-duty-cycle operation due to gate charge limitations.

Can IPW65R110CFDFKSA1 replace older CoolMOS™ CFD1 devices in existing designs?

Yes-pin-compatible with CFD1 variants in TO-247, offering identical footprint and improved parameters: 15% lower R_DS(on), 25% lower E_oss, and 30% faster t_rr. No PCB changes needed, but gate drive strength should be verified due to higher Q_g (118 nC vs. ~95 nC for CFD1).

Is avalanche energy rating validated per JEDEC JESD22-A112A?

Yes-the 845 mJ single-pulse avalanche energy (E_AS) is measured per JESD22-A112A using I_D = 6.2 A, V_DD = 50 V, and specified test circuit. This qualifies the device for unclamped inductive switching in PFC and flyback applications without external snubbers.

Does the TO-247 package support surface-mount reflow assembly?

No-IPW65R110CFDFKSA1 in TO-247 is through-hole only. The package lacks MSL rating and has leads incompatible with standard reflow profiles. For SMD alternatives, consider D²PAK variants like IPB65R110CFD (PG-TO263) rated for MSL 1 reflow per J-STD-020.

IPW65R110CFDFKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 31.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 110mOhm @ 12.7A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 1.3mA

Gate Charge (Qg) (Max) @ Vgs:: 118 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3240 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 277.8W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-1

IPW65R110CFDFKSA1 FAQ

1.How can I place an order for IPW65R110CFDFKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPW65R110CFDFKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPW65R110CFDFKSA1 reliable?

The price and inventory of IPW65R110CFDFKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPW65R110CFDFKSA1 is usually 5 days.

3.What payment methods are accepted for IPW65R110CFDFKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPW65R110CFDFKSA1 transactions.

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4.How is shipping managed for IPW65R110CFDFKSA1?

IPW65R110CFDFKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPW65R110CFDFKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPW65R110CFDFKSA1?

For technical support, including IPW65R110CFDFKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPW65R110CFDFKSA1 requirements.

6.How does Aetrix verify that IPW65R110CFDFKSA1 is sourced from the original manufacturer or authorized distributors?

All IPW65R110CFDFKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPW65R110CFDFKSA1 meets industry standards.

7.What is the process for return or replacement of IPW65R110CFDFKSA1?

All IPW65R110CFDFKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPW65R110CFDFKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPW65R110CFDFKSA1 part is unused and in its original packaging.

Return procedure for IPW65R110CFDFKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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