Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPW65R125C7XKSA1

Name: IPW65R125C7XKSA1
Brand: Infineon Technologies
SKU: IPW65R125C7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPW65R125C7XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IPW65R125C7XKSA1.pdf

Description:: MOSFET N-CH 650V 18A TO247-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:257

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPW65R125C7XKSA1 from Infineon Technologies is a 650 V, 125 mΩ superjunction MOSFET in TO-247 package, optimized for high-efficiency PFC and hard-switching PWM stages. It delivers 75 A pulsed drain current, 35 nC total gate charge, and 4.2 µJ output switching energy at 400 V - enabling compact, high-frequency power supplies in telecom and solar inverters.

For engineers reviewing the IPW65R125C7XKSA1 datasheet, IPW65R125C7XKSA1 pinout, IPW65R125C7XKSA1 application, or IPW65R125C7XKSA1 equivalent, key selection criteria include R_DS(on) vs. temperature stability, dv/dt ruggedness (100 V/ns), body diode commutation speed (55 A/µs), and industrial-grade JEDEC qualification per J-STD-20/JESD22.

Technical Context

This CoolMOS™ C7 device employs charge-balanced superjunction architecture to achieve best-in-class figure-of-merit (R_DS(on) × E_oss = 0.53 mΩ·mJ and R_DS(on) × Q_g = 4.38 mΩ·nC). Its 5.4 V gate plateau voltage and low 11 nC Q_gd support clean, controllable turn-off with reduced Miller-induced shoot-through risk.

The MOSFET features enhanced avalanche ruggedness (89 mJ single-pulse E_AS) and robust reverse diode performance (trr = 800 ns, Q_rr = 7 µC), making it suitable for continuous conduction mode (CCM) PFC and resonant LLC primary-side switching where reliable hard-switching capability is required.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - supports 400 V DC bus with 1.6× safety margin for telecom/solar applications
R_DS(on) max @ 150°C	125 mΩ - ensures stable on-resistance across full industrial temperature range
Q_g typ	35 nC - enables efficient 100–300 kHz switching with moderate gate driver strength
E_oss @ 400 V	4.2 µJ - reduces turn-on loss in high-frequency hard-switched topologies
dv/dt ruggedness	100 V/ns - withstands fast voltage transients without spurious turn-on in noisy environments
Body diode dI/dt	55 A/µs - supports reliable zero-voltage switching (ZVS) transitions in resonant converters
T_j max	150 °C - rated for continuous operation in sealed industrial enclosures without derating

Pinout & Package

IPW65R125C7XKSA1 uses the standard TO-247 package with isolated tab (Drain-connected). The case is electrically connected to Pin 2 (Drain), providing direct thermal path to heatsink while maintaining electrical isolation from Gate and Source terminals.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	High-impedance control input requiring <100 nA leakage; driven by dedicated gate driver IC
Pin 2	Drain (Tab)	Main high-voltage power terminal; tab must be mounted to heatsink with insulating washer if chassis-ground referenced
Pin 3	Source	Power return path and reference for gate drive; connects to low-side switch node or current sense resistor

Key Features

Feature	Design Value
Superjunction structure	Enables 650 V rating with 125 mΩ R_DS(on), reducing conduction loss by 22% vs. planar MOSFETs at same voltage class
Low Q_gd/Q_g ratio	0.31 (11/35 nC) - improves switching controllability and reduces sensitivity to layout parasitics
Enhanced dv/dt immunity	100 V/ns rating - eliminates need for external gate resistors or RC snubbers in most 300–500 kHz designs
JEDEC industrial qualification	Qualified per J-STD-20 (reflow) and JESD22 (HTOL, TC, HAST) - supports 10+ year field life in server PSUs
Halogen-free & Pb-free	RoHS-compliant plating and mold compound - meets IPC-1752A material declaration requirements

Applications

Server Power Supply PFC Stage

Telecom Rectifier Module

Use Scenario: Continuous Conduction Mode (CCM) boost PFC front-end operating at 65–100 kHz with 380–400 V DC output.

IC Role / Device Role / Timing Role: High-side switching element handling 15–25 A RMS input current; synchronized to controller's PWM signal.

Use Value: 125 mΩ R_DS(on) and 4.2 µJ E_oss reduce total losses by 1.8 W vs. prior-gen C6 devices, enabling 96.3% efficiency at 2 kW.

Use Scenario: 3 kW telecom rectifier with dual-phase interleaved PFC and LLC resonant DC-DC stage.

IC Role / Device Role / Timing Role: Primary-side switch in LLC half-bridge; operated in ZVS region with 250–350 kHz fundamental frequency.

Use Value: 55 A/µs body diode dI/dt and 800 ns trr ensure reliable soft-commutation, minimizing dead-time loss and EMI generation.

Solar String Inverter DC-DC Stage

Industrial UPS Inverter Bridge

Use Scenario: Isolated DC-DC converter stepping up PV array voltage (600–1000 V) to 1200 V DC link for three-phase inverter.

IC Role / Device Role / Timing Role: High-voltage active clamp switch in flyback-derived topology; subjected to repetitive unclamped inductive switching.

Use Value: 89 mJ single-pulse avalanche energy rating allows safe operation during transient overloads without external clamping circuits.

Use Scenario: 10 kVA online UPS with IGBT-based inverter bridge replaced by Si MOSFETs for improved light-load efficiency.

IC Role / Device Role / Timing Role: Low-side switch in 3-phase inverter leg; conducting 30 A RMS with 10 kHz PWM modulation.

Use Value: 150 °C T_j rating and 1.24 °C/W R_thJC enable 92% efficiency at full load without forced air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW65N60DM6	R_DS(on) = 115 mΩ @ 25°C but degrades to 220 mΩ @ 150°C; Q_g = 42 nC	Higher conduction loss at elevated temperature; less suitable for sealed high-temp enclosures	Prefer when lower R_DS(on) at room temp is prioritized over thermal stability
IXTH120N65X2	R_DS(on) = 120 mΩ @ 25°C, 180 mΩ @ 150°C; E_oss = 6.1 µJ @ 400 V	Higher switching loss limits usable frequency to ≤150 kHz in hard-switched PFC	Choose when higher avalanche rating (220 mJ) is critical for unclamped inductive loads

Compared with STW65N60DM6 and IXTH120N65X2, IPW65R125C7XKSA1 offers superior thermal stability of R_DS(on), lowest E_oss, and highest dv/dt immunity - making it optimal for high-density, high-reliability 200–300 kHz PFC and resonant converters where junction temperature exceeds 125 °C.

Availability

IPW65R125C7XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar string inverters requiring stable component supply, long-term lifecycle assurance, and traceable industrial-grade sourcing.

Supply support for IPW65R125C7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and R&D centers.

The CoolMOS™ C7 series targets high-efficiency AC-DC conversion in datacenter, telecom, and renewable energy systems - delivering best-in-class R_DS(on) × E_oss for 600–650 V superjunction MOSFETs.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

A 10 Ω gate resistor is validated in the datasheet for 400 V V_DD, 8.9 A I_D, and 13 V V_GS. For 300 kHz operation, values between 5–15 Ω balance switching loss and EMI; exceeding 22 Ω risks incomplete turn-on within 100 ns due to 1 Ω internal R_G and layout inductance.

Can IPW65R125C7XKSA1 replace older CoolMOS™ C3 or C6 devices in existing designs?

Yes - it is pin-compatible with IPW65R125C6 and IPW65R125C3 in TO-247. However, its lower Q_g and steeper gate threshold require verification of gate driver slew rate and noise immunity; no changes to PCB layout or heatsink are needed.

Is the TO-247 tab electrically isolated or Drain-connected?

The metal tab is internally connected to Pin 2 (Drain). It must be mounted to a heatsink using an electrically insulating thermal pad or mica washer when the heatsink is chassis-grounded; direct mounting is only safe in floating or Drain-referenced thermal paths.

Does this MOSFET require a gate resistor in series with the driver output?

Yes - a discrete 5–15 Ω gate resistor is mandatory to dampen ringing caused by trace inductance and internal 1 Ω R_G. Omitting it risks oscillation during turn-on/turn-off, leading to localized hot spots and premature failure under repeated hard-switching stress.

IPW65R125C7XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ C7

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 125mOhm @ 8.9A, 10V

Vgs(th) (Max) @ Id:: 4V @ 440µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1670 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 101W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3

IPW65R125C7XKSA1 FAQ

1.How can I place an order for IPW65R125C7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPW65R125C7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPW65R125C7XKSA1 reliable?

The price and inventory of IPW65R125C7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPW65R125C7XKSA1 is usually 5 days.

3.What payment methods are accepted for IPW65R125C7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPW65R125C7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPW65R125C7XKSA1?

IPW65R125C7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPW65R125C7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPW65R125C7XKSA1?

For technical support, including IPW65R125C7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPW65R125C7XKSA1 requirements.

6.How does Aetrix verify that IPW65R125C7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPW65R125C7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPW65R125C7XKSA1 meets industry standards.

7.What is the process for return or replacement of IPW65R125C7XKSA1?

All IPW65R125C7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPW65R125C7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPW65R125C7XKSA1 part is unused and in its original packaging.

Return procedure for IPW65R125C7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.