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Infineon Technologies IPW65R150CFDFKSA1

Name: IPW65R150CFDFKSA1
Brand: Infineon Technologies
SKU: IPW65R150CFDFKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPW65R150CFDFKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IPW65R150CFDFKSA1.pdf

Description:: MOSFET N-CH 650V 22.4A TO247-3

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Product details

Overview

IPW65R150CFDFKSA1 from Infineon Technologies is a 650 V, 22.4 A (T_C = 100 °C) N-channel superjunction MOSFET in TO-247 package, featuring R_DS(on) = 0.15 Ω (max), Q_g = 86 nC (typ), and ultra-fast body diode with t_rr = 140 ns - engineered for high-efficiency resonant switching in server power supplies and telecom rectifiers.

For engineers reviewing the IPW65R150CFDFKSA1 datasheet, IPW65R150CFDFKSA1 pinout, IPW65R150CFDFKSA1 application, or IPW65R150CFDFKSA1 equivalent, this device delivers verified commutation ruggedness (di/dt = 900 A/µs), low E_oss (6.8 µJ @ 400 V), and industrial-grade JEDEC qualification - critical for ZVS/ZCS topologies requiring robust hard-switching capability.

Technical Context

This CoolMOS™ CFD2 device implements a charge-compensated superjunction structure enabling simultaneous reduction of conduction and switching losses. Its gate threshold voltage (V_GS(th) = 3.5–4.5 V) and plateau voltage (V_GP = 6.4 V) support standard 10 V gate drive while maintaining noise immunity.

The integrated ultra-fast body diode exhibits low Q_rr (0.7 µC) and controlled reverse recovery, eliminating need for external anti-parallel diodes in LLC half-bridge primary switches. Thermal resistance R_thJC = 0.64 °C/W enables high-power operation with minimal heatsink footprint.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - supports 400 V DC bus with ≥50 % safety margin in telecom/server PFC and resonant converters
R_DS(on)	0.15 Ω max - enables <22.4 A continuous current at T_C = 100 °C with ≤34 W conduction loss
Q_g	86 nC typ - determines gate drive power requirement and switching speed in 100–500 kHz LLC designs
E_oss	6.8 µJ @ 400 V - directly reduces turn-on loss in zero-voltage-switching (ZVS) applications
t_rr	140 ns - ensures clean commutation without voltage overshoot in synchronous rectifier or half-bridge configurations
R_thJC	0.64 °C/W - allows junction temperature control under 195.3 W P_D with standard TO-247 heatsinking
I_D,pulse	72 A - supports short-term overload handling during startup or fault conditions in SMPS

Pinout & Package

IPW65R150CFDFKSA1 uses the industry-standard TO-247 package (PG-TO247), with isolated mounting hole, high-current drain tab, and lead-free plating compliant with RoHS and halogen-free requirements.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives 10 V logic-level gate drive; low R_G = 1.5 Ω minimizes ringing and simplifies driver selection
Pin 2 (Drain)	High-side power output	Connected to DC bus or transformer primary; electrically isolated tab enables direct heatsink mounting
Pin 3 (Source)	Power return / reference node	Serves as local ground reference for gate driver; must be low-inductance path to minimize dV/dt coupling

Key Features

Feature	Design Value
Ultra-fast body diode	t_rr = 140 ns, Q_rr = 0.7 µC - eliminates need for external SiC/Schottky diode in resonant half-bridges
Commutation ruggedness	di/d = 900 A/µs - withstands abrupt current reversal in LLC tank circuits without failure
Low figure-of-merit	R_DS(on) × Q_g = 12.9 Ω·nC - balances conduction and switching losses for optimal 200–300 kHz efficiency
Industrial qualification	JEDEC J-STD-020 & JESD22 compliant - validated for 150 °C operation and thermal cycling in harsh environments

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3 kW LLC resonant converter for datacenter PSUs.

IC Role / Device Role / Timing Role: High-side switching element operating at 250 kHz with ZVS, managing 48 V–54 V output regulation.

Use Value: Low E_oss (6.8 µJ) and fast body diode reduce dead-time losses and improve full-load efficiency by ≥0.8 % vs. standard SJ MOSFETs.

Use Scenario: Active clamp forward or phase-shifted full-bridge in 48 V telecom rectifiers.

IC Role / Device Role / Timing Role: Main switching transistor handling 30 A peak current with 650 V blocking capability.

Use Value: 900 A/µs di/d rating prevents commutation failure during rapid load transients common in base station power systems.

LCD TV Backlight Inverter

Solar Microinverter

Use Scenario: Half-bridge switch in resonant inverter driving CCFL or LED backlight arrays.

IC Role / Device Role / Timing Role: High-frequency (150–300 kHz) switching device with integrated body diode for bidirectional current flow.

Use Value: Ultra-low Q_rr (0.7 µC) suppresses voltage spikes during flyback transitions, reducing EMI filter size by 30 %.

Use Scenario: DC-DC boost stage in single-phase microinverters interfacing PV panels to grid.

IC Role / Device Role / Timing Role: High-voltage switch in interleaved boost converter operating up to 600 V DC input.

Use Value: R_DS(on) = 0.15 Ω enables >98.2 % conversion efficiency at 250 W per channel under 75 °C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R110CFD	R_DS(on) = 0.11 Ω (lower), Q_g = 105 nC (higher), same package and V_DS	Better conduction loss but higher gate drive demand; less suitable for high-frequency (>350 kHz) operation	Select when thermal headroom is limited and switching frequency ≤200 kHz
IPW65R099CFD	R_DS(on) = 0.099 Ω, Q_g = 125 nC, identical CFD2 platform	Higher conduction efficiency but increased E_on; requires stronger gate driver and tighter layout control	Prefer for high-power density designs where board space constrains heatsink area

Compared with IPW65R110CFD and IPW65R099CFD, IPW65R150CFDFKSA1 offers optimal balance of gate drive simplicity (86 nC), thermal performance (0.64 °C/W), and ruggedness - making it ideal for cost-sensitive, mid-power resonant converters where reliability trumps marginal efficiency gains.

Availability

IPW65R150CFDFKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, LCD TV backlight inverters, and solar microinverters requiring stable component supply across multi-year production cycles.

Supply support for IPW65R150CFDFKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and industrial control solutions, with over 30 years of silicon innovation and global manufacturing scale.

This device belongs to the CoolMOS™ CFD2 product line - developed specifically for high-efficiency resonant and soft-switching topologies in industrial and telecom power conversion, emphasizing body-diode robustness and low E_oss.

FAQ

What is the maximum continuous drain current for IPW65R150CFDFKSA1 at 100 °C case temperature?

The maximum continuous drain current is 14.2 A at T_C = 100 °C, as specified in Table 2 of the Rev. 2.0 datasheet. This rating is thermally limited by junction-to-case thermal resistance (0.64 °C/W) and package power dissipation (195.3 W at T_C = 25 °C). Derating curves confirm linear reduction to zero at 150 °C junction temperature.

Does IPW65R150CFDFKSA1 require a negative gate turn-off voltage?

No. The device operates with 0 V to +10 V gate drive and does not require negative turn-off bias. Its gate threshold voltage (3.5–4.5 V) and plateau voltage (6.4 V) are compatible with standard unipolar gate drivers. Negative voltage is unnecessary due to low gate leakage (<100 nA) and high dv/dt ruggedness (50 V/ns).

Can IPW65R150CFDFKSA1 replace older CoolMOS™ CFD devices in existing designs?

Yes - it is a direct drop-in replacement for IPW65R150CFD (same marking, TO-247 package, identical pinout and thermal footprint). Electrical parameters including R_DS(on), Q_g, and E_oss are unchanged; only the suffix "FKSA1" denotes updated packaging and traceability compliance per Infineon's 2020 manufacturing revision.

What is the recommended gate resistor value for 250 kHz LLC operation?

A gate resistor of 10–15 Ω is recommended to balance switching speed and gate oscillation damping. With Q_g = 86 nC and typical driver output impedance ~2 Ω, this yields ~15–20 ns rise/fall times - sufficient for ZVS initiation while limiting EMI and shoot-through risk in half-bridge configurations.

IPW65R150CFDFKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 22.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 150mOhm @ 9.3A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 900µA

Gate Charge (Qg) (Max) @ Vgs:: 86 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2340 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 195.3W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3

IPW65R150CFDFKSA1 FAQ

1.How can I place an order for IPW65R150CFDFKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPW65R150CFDFKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPW65R150CFDFKSA1 reliable?

The price and inventory of IPW65R150CFDFKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPW65R150CFDFKSA1 is usually 5 days.

3.What payment methods are accepted for IPW65R150CFDFKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPW65R150CFDFKSA1 transactions.

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4.How is shipping managed for IPW65R150CFDFKSA1?

IPW65R150CFDFKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPW65R150CFDFKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPW65R150CFDFKSA1?

For technical support, including IPW65R150CFDFKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPW65R150CFDFKSA1 requirements.

6.How does Aetrix verify that IPW65R150CFDFKSA1 is sourced from the original manufacturer or authorized distributors?

All IPW65R150CFDFKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPW65R150CFDFKSA1 meets industry standards.

7.What is the process for return or replacement of IPW65R150CFDFKSA1?

All IPW65R150CFDFKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPW65R150CFDFKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPW65R150CFDFKSA1 part is unused and in its original packaging.

Return procedure for IPW65R150CFDFKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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