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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPW65R190C7XKSA1

Name: IPW65R190C7XKSA1
Brand: Infineon Technologies
SKU: IPW65R190C7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPW65R190C7XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IPW65R190C7XKSA1.pdf

Description:: MOSFET N-CH 650V 13A TO247-3

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Product details

Overview

IPW65R190C7XKSA1 from Infineon Technologies is a 650 V, 190 mΩ superjunction N-channel power MOSFET in the CoolMOS™ C7 family, designed for high-efficiency hard-switching and PFC applications. It delivers 13 A continuous drain current at T_C = 25°C, 23 nC total gate charge, and 2.7 µJ output switching energy at 400 V - enabling high-frequency operation in server and telecom SMPS.

For engineers reviewing the IPW65R190C7XKSA1 datasheet, IPW65R190C7XKSA1 pinout, IPW65R190C7XKSA1 application, or IPW65R190C7XKSA1 equivalent, key selection criteria include R_DS(on) × Q_g figure-of-merit, dv/dt ruggedness (100 V/ns), body diode dI/dt rating (55 A/µs), and TO-247 package thermal resistance (1.73 °C/W).

Technical Context

This device implements Infineon's superjunction (SJ) architecture with optimized charge compensation for reduced conduction and switching losses. Its 650 V V_(BR)DSS, 3.5 V typical gate threshold voltage, and 5.4 V gate plateau enable robust gate drive compatibility with standard 12–15 V controllers.

The CoolMOS™ C7 generation features enhanced dv/dt immunity and improved E_oss linearity versus prior generations, supporting stable operation in high-noise PFC boost stages and LLC resonant half-bridges without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - rated for primary-side switching in universal-input 400 V DC bus systems
R_DS(on) max @ 150°C	190 mΩ - ensures low conduction loss at full-load junction temperature
Q_g typ	23 nC - enables fast turn-on with moderate gate driver strength (e.g., 1–2 A peak)
E_oss @ 400 V	2.7 µJ - reduces turn-off loss and improves efficiency in hard-switched topologies
dv/dt ruggedness	100 V/ns - supports reliable operation in noisy high-dV/dt environments without false triggering
Body diode dI/dt	55 A/µs - sustains fast commutation in synchronous rectification and ZVS transitions
T_j max	150 °C - qualified for industrial-grade thermal cycling and long-term reliability

Pinout & Package

IPW65R190C7XKSA1 is housed in a TO-247 package with isolated tab (drain-connected). The package provides low thermal resistance (R_thJC = 1.73 °C/W) and mechanical robustness for high-power board mounting.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Lead)	Gate	Control terminal; requires <10 Ω series resistance to suppress ringing during fast switching
Pin 2 (Tab)	Drain	Main high-voltage power terminal; electrically connected to metal tab for heatsink mounting
Pin 3 (Lead)	Source	Power return and reference node; forms common connection for gate driver ground and current sensing

Key Features

Feature	Design Value
Superjunction structure	Enables 650 V rating with R_DS(on) × Q_g FOM 4.39 Ω·nC - best-in-class tradeoff for 65–100 kHz PFC designs
Enhanced dv/dt immunity	100 V/ns rating eliminates need for gate clamping in most 400 V bus applications
Low E_oss	2.7 µJ at 400 V reduces turn-off loss by ~35% vs. prior C6 generation under identical conditions
Industrial qualification	JEDEC J-STD-20/JESD22 compliant - validated for 1000-cycle reflow and 1000-hr HTRB at 150 °C

Applications

Server SMPS PFC Stage

Telecom Rectifier Module

Use Scenario: Boost PFC front-end in 3 kW redundant AC/DC power supply for data center servers.

IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost converter operating at 65–100 kHz.

Use Value: 190 mΩ R_DS(on) and 23 nC Q_g reduce conduction + switching losses, enabling >98% PFC efficiency at full load.

Use Scenario: Primary-side switch in 2 kW telecom rectifier with universal AC input and 54 V DC output.

IC Role / Device Role / Timing Role: Hard-switched PWM transistor in phase-shifted full-bridge topology.

Use Value: 100 V/ns dv/dt ruggedness prevents spurious turn-on during high-slew-rate transformer reset events.

UPS Inverter Stage

Solar String Inverter DC/AC

Use Scenario: Output H-bridge switch in online double-conversion UPS delivering clean 230 V sine wave.

IC Role / Device Role / Timing Role: Low-side switching element handling 15 A RMS output current at 16 kHz PWM frequency.

Use Value: 55 A/µs body diode dI/dt rating ensures reliable freewheeling during dead-time commutation.

Use Scenario: DC-link switch in string inverter stage converting 600–1000 V PV input to grid-synchronized AC.

IC Role / Device Role / Timing Role: High-voltage bridge leg switch in three-phase inverter with unipolar modulation.

Use Value: 650 V V_(BR)DSS and 150 °C T_j max support operation across wide ambient and solar irradiance variations.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW65N60DM6	600 V rating, 65 mΩ R_DS(on), higher Q_g (45 nC), lower E_oss (1.9 µJ)	Better suited for 200–400 V DC bus; not rated for 400 V+ PFC hold-up	Select when system DC bus ≤ 400 V and lower R_DS(on) outweighs voltage margin needs
IXFH60N60P3	600 V rating, 60 mΩ R_DS(on), significantly higher Q_g (120 nC), no dv/dt spec	Requires stronger gate driver; lacks documented dv/dt immunity for noise-prone PFC layouts	Prefer only in low-frequency (<30 kHz), low-noise industrial motor drives where gate drive capability is abundant

Compared with STW65N60DM6 and IXFH60N60P3, IPW65R190C7XKSA1 offers superior voltage margin for 400 V+ PFC, lower gate charge for faster switching, and verified 100 V/ns dv/dt immunity - making it optimal for high-density, high-efficiency telecom and server power supplies.

Availability

IPW65R190C7XKSA1 is available at Aetrix Electronics and suitable for server SMPS, telecom rectifiers, and UPS inverters requiring stable component supply, JEDEC-qualified reliability, and consistent parametric performance across production lots.

Supply support for IPW65R190C7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

The CoolMOS™ C7 product line targets high-efficiency, high-power-density AC/DC conversion - specifically engineered for next-generation PFC and soft/hard-switched SMPS in computing, telecom, and renewable energy systems.

FAQ

What is the maximum continuous drain current for IPW65R190C7XKSA1 at 100°C case temperature?

The maximum continuous drain current is 8 A at T_C = 100°C, as specified in Table 2 of the Rev. 2.1 datasheet. This derating reflects thermal limits of the TO-247 package and internal silicon constraints - not gate drive capability. Operation above this current requires active cooling or pulse-width limitation to maintain T_j ≤ 150°C.

Does IPW65R190C7XKSA1 have an integrated body diode, and what is its reverse recovery performance?

Yes, it features a monolithic body diode with t_rr = 830 ns, Q_rr = 6.5 µC, and I_rrm = 18 A under V_R = 400 V, I_F = 13 A, and dI_F/dt = 55 A/µs conditions. Its soft recovery characteristic minimizes voltage overshoot during commutation, reducing EMI in high-frequency PFC stages.

Can IPW65R190C7XKSA1 be paralleled with identical units, and what layout precautions are required?

Yes, parallel operation is supported but requires individual gate resistors and ferrite beads on each gate lead to suppress oscillation. Layout must ensure matched source inductance and symmetrical thermal coupling. The datasheet explicitly recommends separate totem-pole drivers or gate ferrites to prevent current imbalance due to dynamic parameter mismatches.

Is IPW65R190C7XKSA1 RoHS-compliant and halogen-free?

Yes - it uses Pb-free plating and halogen-free mold compound, fully compliant with RoHS Directive 2011/65/EU and JEDEC standards J-STD-20 and JESD22. The "XKSA1" suffix confirms industrial-grade packaging and environmental compliance per Infineon's ordering code convention.

IPW65R190C7XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ C7

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 190mOhm @ 5.7A, 10V

Vgs(th) (Max) @ Id:: 4V @ 290µA

Gate Charge (Qg) (Max) @ Vgs:: 23 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1150 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 72W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3

IPW65R190C7XKSA1 FAQ

1.How can I place an order for IPW65R190C7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPW65R190C7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPW65R190C7XKSA1 reliable?

The price and inventory of IPW65R190C7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPW65R190C7XKSA1 is usually 5 days.

3.What payment methods are accepted for IPW65R190C7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPW65R190C7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPW65R190C7XKSA1?

IPW65R190C7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPW65R190C7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPW65R190C7XKSA1?

For technical support, including IPW65R190C7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPW65R190C7XKSA1 requirements.

6.How does Aetrix verify that IPW65R190C7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPW65R190C7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPW65R190C7XKSA1 meets industry standards.

7.What is the process for return or replacement of IPW65R190C7XKSA1?

All IPW65R190C7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPW65R190C7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPW65R190C7XKSA1 part is unused and in its original packaging.

Return procedure for IPW65R190C7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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