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Infineon Technologies IPW65R190CFD7AXKSA1
- Part No.:
- IPW65R190CFD7AXKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-247-3
- Datasheet:
-
IPW65R190CFD7AXKSA1.pdf
- Description:
- MOSFET N-CH 650V 14A TO247-3
- Quantity:
- Payment:
- Shipping:
Inventory:7,105
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Product details
Overview
IPW65R190CFD7AXKSA1 from Infineon is a 650 V, 190 mΩ automotive-qualified Superjunction MOSFET in PG-TO247-3 package with integrated fast body diode and ultra-low Qrr (0.46 µC). It delivers RDS(on) × Qg and RDS(on) × Eoss FOMs optimized for ZVS phase-shift full-bridge and LLC resonant DC-DC converters in on-board chargers.
For engineers reviewing the IPW65R190CFD7AXKSA1 datasheet, IPW65R190CFD7AXKSA1 pinout, IPW65R190CFD7AXKSA1 application, or IPW65R190CFD7AXKSA1 equivalent, key selection criteria include its 1300 A/µs diF/dt rating, 100% avalanche-tested ruggedness, AEC-Q101 qualification, and suitability for bidirectional 475 V battery systems requiring low light-load losses and high switching frequency capability.
Technical Context
This CoolMOS™ CFD7A device uses charge compensation technology to achieve ultra-low gate charge (Qg = 28 nC) and energy-related output capacitance (Eoss = 3.7 µJ @ 400 V), enabling efficient soft-switching operation in resonant topologies. Its integrated fast-recovery body diode (trr = 97 ns, Qrr = 0.46 µC) eliminates need for external anti-parallel diodes in PFC and isolated DC-DC stages.
The MOSFET features 120 V/ns dv/dt ruggedness and 70 V/ns reverse diode dv/dt rating-critical for noise immunity in high-frequency, high-voltage automotive power stages. Thermal resistance RthJC = 1.62 °C/W supports high-power density designs when mounted on heatsinks with M3/M3.5 screws.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 650 V - Rated blocking voltage for 475 V battery systems with margin against transients and cosmic radiation effects. |
| RDS(on),max | 190 mΩ @ Tj = 150°C - Ensures stable conduction loss under worst-case thermal conditions in automotive OBCs. |
| Qg,typ | 28 nC - Enables low gate drive power and fast switching at >200 kHz in LLC converters without excessive driver stress. |
| Eoss @ 400 V | 3.7 µJ - Reduces turn-off loss and improves ZVS behavior in phase-shifted full-bridge topologies. |
| diF/dt | 1300 A/µs - Supports high-speed synchronous rectification and minimizes commutation-induced voltage spikes in bidirectional converters. |
| trr | 97 ns - Limits reverse recovery overshoot and EMI generation during hard-commutated transitions in PFC boost stages. |
| Avalanche Energy | 64 mJ - Guarantees single-pulse ruggedness under short-circuit or overload events without derating. |
Pinout & Package
Package: PG-TO247-3 - Through-hole thermally enhanced package with isolated tab (Drain-connected) for direct heatsink mounting and low-inductance layout.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Gate) | Control input | Low-impedance gate terminal with 10 Ω internal RG; requires <13 V drive for full enhancement and plateau crossing at 5.7 V. |
| Pin 2 (Drain / Tab) | Main current path (high-side switch node) | Exposed metal tab electrically connected to Drain; serves as primary thermal path and must be insulated from heatsink unless referenced to same potential. |
| Pin 3 (Source) | Reference return path | Common source node for gate drive reference and current sensing; ties to low-side switch or ground in half-bridge configurations. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated fast body diode | Qrr = 0.46 µC, trr = 97 ns - Eliminates need for discrete anti-parallel diodes in resonant LLC secondaries and reduces BOM count. |
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and UIS - enables use in OBCs without additional qualification effort. |
| Ultra-low RDS(on) × Qg | 5.32 Ω·nC - Delivers best-in-class trade-off between conduction and switching loss for 650 V SJ MOSFETs in high-frequency PFC. |
| 100% UIS tested | Single-pulse avalanche energy ≥64 mJ - Confirms robustness against inductive kickback in unregulated DC-DC stages during fault conditions. |
| Optimized for ZVS | Eoss = 3.7 µJ @ 400 V - Enables reliable zero-voltage switching down to 100 kHz in phase-shifted full-bridge converters with minimal dead-time tuning. |
Applications
| On-Board Charger (OBC) Primary Side | LLC Resonant DC-DC Converter |
|---|---|
|
Use Scenario: High-efficiency AC/DC + DC/DC conversion in EVs with 400–475 V battery architecture. IC Role / Device Role / Timing Role: High-side switch in asymmetric half-bridge PFC stage and primary-side switch in LLC transformer driver. Use Value: Low Qrr and high diF/dt enable clean zero-current switching in boost PFC and reduce circulating current losses in LLC primary. |
Use Scenario: Isolated 800 V to 400 V bidirectional DC-DC conversion for vehicle-to-grid (V2G) and battery balancing. IC Role / Device Role / Timing Role: Primary-side switching element in phase-shifted full-bridge topology operating at 150–300 kHz. Use Value: Ultra-low Eoss ensures reliable ZVS across load range, while 1.62 °C/W RthJC sustains >3 kW output with passive cooling. |
| Unidirectional DC-DC Boost Stage | Industrial Solar Inverter DC Link |
|
Use Scenario: 1000 V DC link step-up for grid-tied solar inverters using SiC-compatible gate drivers. IC Role / Device Role / Timing Role: Main switching transistor in two-level boost converter handling up to 15 A continuous current. Use Value: 650 V rating with 120 V/ns dv/dt ruggedness prevents false triggering during fast voltage transients in PV string interfaces. |
Use Scenario: Auxiliary power supply and auxiliary DC-DC stage in industrial solar inverters requiring long-term field reliability. IC Role / Device Role / Timing Role: High-voltage switch in flyback or forward converter powering gate drivers and control logic. Use Value: AEC-Q101 qualification and -40°C to +150°C Tj rating ensure stable operation in outdoor enclosures with wide ambient swings. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage Superjunction MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPW65R095CFD7A | RDS(on) = 95 mΩ (lower), Qg = 52 nC (higher), same package and AEC-Q101 grade | Better conduction loss but higher switching loss; requires larger gate driver and careful layout for EMI control | Select when system prioritizes full-load efficiency over light-load performance and switching frequency headroom |
| STW65N60M2 | 600 V rating, RDS(on) = 110 mΩ, no integrated fast diode, not AEC-Q101 qualified | Limited to non-automotive 400 V systems; requires external diode and additional qualification for automotive use | Consider only for cost-sensitive industrial PFC where automotive reliability and integrated diode are not required |
Compared with IPW65R190CFD7AXKSA1, the IPW65R095CFD7A trades higher gate charge for lower RDS(on), making it preferable in fixed-frequency hard-switched PFC, while STW65N60M2 lacks automotive qualification and fast diode integration-limiting its use to non-safety-critical industrial applications.
Availability
IPW65R190CFD7AXKSA1 is available at Aetrix Electronics and suitable for on-board chargers, LLC resonant DC-DC converters, and unidirectional boost stages requiring stable component supply, automotive-grade reliability, and high-voltage switching performance.
Supply support for IPW65R190CFD7AXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.
This device belongs to the CoolMOS™ CFD7A product line-designed specifically for high-efficiency, high-reliability automotive power conversion in on-board chargers and bidirectional DC-DC systems operating up to 475 V battery voltage.
FAQ
Is IPW65R190CFD7AXKSA1 suitable for linear-mode operation?
No. Infineon explicitly advises against linear-mode operation for this device due to thermal instability risks. The datasheet states "We do not recommend using the CoolMOS mentioned in this datasheet to operate in 'linear mode'" and directs users to contact sales for assessment if such use is unavoidable. Its design targets switched-mode topologies only.
What is the maximum recommended gate drive voltage?
The absolute maximum gate-source voltage is ±30 V for pulsed conditions (≤2 ns, ≤100 kHz repetition), but the recommended operating range is ±20 V static. Gate plateau voltage is 5.7 V, and full enhancement occurs at VGS ≥ 10 V. Exceeding 20 V static risks oxide degradation over time.
Does the device require an external gate resistor for safe operation?
Yes. Although it has an internal gate resistance of 10 Ω, external RG is required to control dV/dt, suppress oscillation, and limit peak gate current. Typical values range from 5 Ω to 22 Ω depending on switching speed requirements and driver capability-per layout-dependent recommendations in Infineon's AN2017-04 application note.
How does the integrated body diode differ from standard MOSFET body diodes?
It is a specially engineered fast-recovery diode with Qrr = 0.46 µC and trr = 97 ns-over 5× faster than conventional SJ MOSFET body diodes. This enables soft commutation in resonant topologies and eliminates reverse recovery spikes that cause EMI and stress in hard-switched PFC circuits.
IPW65R190CFD7AXKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolMOS™
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 190mOhm @ 6.4A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 320µA
- Gate Charge (Qg) (Max) @ Vgs:
- 28 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1291 pF @ 400 V
- FET Feature:
- -
- Power Dissipation (Max):
- 77W (Tc)
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO247-3
IPW65R190CFD7AXKSA1 FAQ
1.How can I place an order for IPW65R190CFD7AXKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPW65R190CFD7AXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPW65R190CFD7AXKSA1 reliable?
The price and inventory of IPW65R190CFD7AXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPW65R190CFD7AXKSA1 is usually 5 days.
3.What payment methods are accepted for IPW65R190CFD7AXKSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPW65R190CFD7AXKSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPW65R190CFD7AXKSA1?
IPW65R190CFD7AXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPW65R190CFD7AXKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPW65R190CFD7AXKSA1?
For technical support, including IPW65R190CFD7AXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPW65R190CFD7AXKSA1 requirements.
6.How does Aetrix verify that IPW65R190CFD7AXKSA1 is sourced from the original manufacturer or authorized distributors?
All IPW65R190CFD7AXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPW65R190CFD7AXKSA1 meets industry standards.
7.What is the process for return or replacement of IPW65R190CFD7AXKSA1?
All IPW65R190CFD7AXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPW65R190CFD7AXKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPW65R190CFD7AXKSA1 part is unused and in its original packaging.
Return procedure for IPW65R190CFD7AXKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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