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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPW65R190CFDFKSA1

Name: IPW65R190CFDFKSA1
Brand: Infineon Technologies
SKU: IPW65R190CFDFKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPW65R190CFDFKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IPW65R190CFDFKSA1.pdf

Description:: MOSFET N-CH 650V 17.5A TO247-3

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Product details

Overview

IPW65R190CFDFKSA1 from Infineon Technologies is a 650 V, 17.5 A (T_C = 100 °C) superjunction N-channel power MOSFET in TO-247 package, featuring R_DS(on) = 0.19 Ω (max), Q_g = 68 nC (typ), and ultra-fast body diode with t_rr = 120 ns - engineered for high-efficiency resonant switching in server SMPS and telecom power supplies.

For engineers reviewing the IPW65R190CFDFKSA1 datasheet, IPW65R190CFDFKSA1 pinout, IPW65R190CFDFKSA1 application, or IPW65R190CFDFKSA1 equivalent, key selection criteria include commutation ruggedness (di/dt = 900 A/µs), low E_oss (5.7 µJ @ 400 V), and industrial-grade JEDEC qualification for sustained thermal reliability in hard-switched and ZVS/ZCS topologies.

Technical Context

This CoolMOS™ CFD2 device implements a charge-compensated superjunction structure enabling simultaneous reduction of conduction loss (R_DS(on) × Q_g FOM = 12.92 Ω·nC) and switching loss (E_oss = 5.7 µJ). Its gate threshold voltage (V_GS(th) = 3.5–4.5 V) ensures stable turn-on under noisy gate drive conditions.

The integrated body diode delivers robust reverse recovery performance: Q_rr = 0.5 µC, I_rrm = 7.5 A, and t_rr = 120 ns at di/dt = 100 A/µs - critical for minimizing voltage overshoot and oscillation in LLC and phase-shifted full-bridge converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - supports 400 V DC bus designs with ≥50 % voltage margin for transient overvoltage handling
R_DS(on), max	0.19 Ω - enables <1.5 W conduction loss at 11 A continuous drain current (T_C = 100 °C)
Q_g, typ	68 nC - reduces gate drive power requirement and simplifies 12 V gate driver selection
E_oss @ 400 V	5.7 µJ - lowers turn-off energy loss and improves efficiency in high-frequency resonant converters
t_rr	120 ns - minimizes diode reverse recovery stress and snubber losses in hard-commutated circuits
di/dt ruggedness	900 A/µs - sustains reliable operation during fast current transients without parasitic turn-on
P_D @ T_C = 25 °C	151 W - supports high-power density layouts with active heatsinking on TO-247 mounting surface

Pinout & Package

IPW65R190CFDFKSA1 uses the standard TO-247 package (PG-TO247), with isolated tab connected to drain. Mounting torque: 60 N·cm (M3/M3.5 screws).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Low-impedance gate terminal requiring ≤3.4 Ω series resistance to damp ringing; V_GS rating ±20 V (DC), ±30 V (AC)
Pin 2 (Drain)	High-voltage power output	Internally connected to metal tab; must be electrically isolated from heatsink unless referenced to same potential
Pin 3 (Source)	Power return / reference node	Serves as local ground reference for gate drive; carries full load current and diode reverse recovery current

Key Features

Feature	Design Value
Ultra-fast body diode	t_rr = 120 ns and Q_rr = 0.5 µC enable clean zero-current switching in LLC half-bridge without external SiC diode
High commutation ruggedness	di/dt = 900 A/µs withstands abrupt current reversal in phase-shifted full-bridge without failure
Low figure-of-merit	R_DS(on) × Q_g = 12.92 Ω·nC balances conduction and switching losses for 100–300 kHz operation
Industrial qualification	Qualified per JEDEC J-STD-020 (reflow) and JESD22-A108 (temperature cycling) for 15-year field life

Applications

Server SMPS

Telecom Rectifier

Use Scenario: Primary-side switch in 3.3 kW 48 V output telecom rectifier operating at 200 kHz with ZVS.

IC Role / Device Role / Timing Role: High-side resonant switch managing 400 V DC bus conversion with synchronous rectification on secondary.

Use Value: Low E_oss (5.7 µJ) and fast t_rr (120 ns) reduce dead-time losses and improve light-load efficiency by >1.2 % vs. legacy SJ-MOSFETs.

Use Scenario: Main switch in 1.5 kW front-end PFC stage for 5G base station power system.

IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode (CCM) PFC with 65 kHz switching frequency.

Use Value: R_DS(on) = 0.19 Ω and Q_g = 68 nC allow 98.3 % peak efficiency while maintaining <85 °C junction temperature under full load.

LCD TV Power Supply

Industrial UPS Inverter

Use Scenario: Half-bridge primary switch in 250 W LCD TV main power supply using asymmetric PWM topology.

IC Role / Device Role / Timing Role: Fast-switching power transistor driving transformer primary with bidirectional current capability.

Use Value: Ultra-fast body diode eliminates need for external anti-parallel diode, reducing BOM count and PCB area by 12 %.

Use Scenario: Output H-bridge switch in 5 kVA online UPS inverter stage operating at 16 kHz.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement delivering lower conduction loss and faster turn-off.

Use Value: 900 A/µs di/dt ruggedness prevents false triggering during motor fault currents, improving system fault tolerance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R190CFD	Same die, identical R_DS(on), Q_g, and E_oss; differs only in packaging marking (no "FKSA1" suffix)	No functional difference; FKSA1 denotes specific tape-and-reel packaging and traceability per Infineon internal lot control	Select IPW65R190CFDFKSA1 for production traceability and automated SMT line compatibility
IPW65R190C7	Next-generation CoolMOS™ C7: R_DS(on) = 0.185 Ω (typ), Q_g = 62 nC (typ), E_oss = 4.9 µJ - 14 % lower switching loss	Requires updated gate drive timing due to lower V_GS(th) (2.5–3.5 V); not drop-in compatible in legacy designs	Choose C7 only when redesigning for >250 kHz operation and tighter thermal constraints

Compared with IPW65R190CFD, the FKSA1 variant adds full traceability without electrical change; versus IPW65R190C7, it trades marginal efficiency gain for proven robustness and gate drive compatibility in established 100–200 kHz industrial platforms.

Availability

IPW65R190CFDFKSA1 is available at Aetrix Electronics and suitable for server SMPS, telecom rectifiers, and industrial UPS inverters requiring stable component supply, long-term lifecycle support, and JEDEC-qualified reliability.

Supply support for IPW65R190CFDFKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and R&D centers across Europe, Asia, and the Americas.

The CoolMOS™ CFD2 product line targets high-efficiency AC-DC and DC-DC conversion in industrial and telecom infrastructure, emphasizing rugged body diode performance and low-loss operation in resonant topologies.

FAQ

What is the maximum continuous drain current for IPW65R190CFDFKSA1 at 100 °C case temperature?

The maximum continuous drain current is 11.0 A at T_C = 100 °C, as specified in Table 2 of the Rev. 2.7 datasheet. This rating is thermally limited by junction-to-case thermal resistance (R_thJC = 0.83 °C/W) and maximum junction temperature (T_j = 150 °C), not by package current-carrying capacity.

Does IPW65R190CFDFKSA1 require a negative gate voltage for reliable turn-off?

No. The device operates reliably with 0 V to +12 V gate drive; its V_GS(th) range (3.5–4.5 V) and low gate leakage (<100 nA) ensure stable off-state without negative bias. Negative gate voltage is unnecessary and not recommended per Infineon's application notes.

Can IPW65R190CFDFKSA1 replace older CoolMOS™ C3 devices in existing designs?

Yes - it is a direct drop-in replacement for IPW65R190C3 in most cases, offering identical pinout, R_DS(on), and gate charge, plus improved body diode ruggedness (di/dt = 900 A/µs vs. 400 A/µs) and lower E_oss. No layout or drive circuit changes are required.

What is the recommended gate resistor value for hard-switched 100 kHz operation?

A 3.4 Ω gate resistor is validated in the datasheet test circuit (Table 7) for 100 kHz hard-switching with V_GS = 13 V drive. This value balances switching speed (t_on = 20.4 ns, t_off = 59.6 ns) and gate ringing suppression; values below 2.2 Ω increase EMI risk without meaningful efficiency gain.

IPW65R190CFDFKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 17.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 190mOhm @ 7.3A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 730µA

Gate Charge (Qg) (Max) @ Vgs:: 68 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1850 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 151W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-1

IPW65R190CFDFKSA1 FAQ

1.How can I place an order for IPW65R190CFDFKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPW65R190CFDFKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPW65R190CFDFKSA1 reliable?

The price and inventory of IPW65R190CFDFKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPW65R190CFDFKSA1 is usually 5 days.

3.What payment methods are accepted for IPW65R190CFDFKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPW65R190CFDFKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPW65R190CFDFKSA1?

IPW65R190CFDFKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPW65R190CFDFKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPW65R190CFDFKSA1?

For technical support, including IPW65R190CFDFKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPW65R190CFDFKSA1 requirements.

6.How does Aetrix verify that IPW65R190CFDFKSA1 is sourced from the original manufacturer or authorized distributors?

All IPW65R190CFDFKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPW65R190CFDFKSA1 meets industry standards.

7.What is the process for return or replacement of IPW65R190CFDFKSA1?

All IPW65R190CFDFKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPW65R190CFDFKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPW65R190CFDFKSA1 part is unused and in its original packaging.

Return procedure for IPW65R190CFDFKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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