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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPW65R230CFD7AXKSA1

Name: IPW65R230CFD7AXKSA1
Brand: Infineon Technologies
SKU: IPW65R230CFD7AXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPW65R230CFD7AXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IPW65R230CFD7AXKSA1.pdf

Description:: 650V COOLMOS CFD7A SJ POWER DEVI

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Product details

Overview

IPW65R230CFD7AXKSA1 from Infineon is a 650 V, 230 mΩ automotive-qualified Superjunction MOSFET in PG-TO247-3 package with integrated fast body diode, ultra-low Qrr (0.4 µC), R_DS(on)×Q_g FOM, and 1300 A/µs diode commutation speed-designed for high-efficiency PFC and ZVS phase-shift full-bridge DC-DC converters in on-board chargers.

For engineers reviewing the IPW65R230CFD7AXKSA1 datasheet, IPW65R230CFD7AXKSA1 pinout, IPW65R230CFD7AXKSA1 application, or IPW65R230CFD7AXKSA1 equivalent, key selection criteria include avalanche-tested ruggedness (52 mJ), 100% AEC-Q101 qualification, low E_oss (3.0 µJ @ 400 V), and optimized dv/dt immunity (120 V/ns) for high-voltage battery systems up to 475 V.

Technical Context

This CoolMOS™ CFD7A device employs charge compensation technology with trench-gate superjunction architecture, enabling simultaneous reduction of conduction and switching losses. Its integrated fast-recovery body diode (t_rr = 91 ns, Q_rr = 0.4 µC) supports zero-voltage switching in resonant topologies without external diode supplementation.

The MOSFET features gate plateau voltage of 5.8 V and total gate charge of 23 nC at V_GS = 0–10 V, supporting precise timing control in high-frequency (>100 kHz) PFC stages. Thermal resistance R_thJC is 1.99 °C/W, enabling stable operation at T_j up to 150 °C under forced-air or heatsink-cooled conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Withstands DC bus voltages up to 475 V in automotive battery systems with margin for transient overvoltage.
R_DS(on),max	230 mΩ @ T_j = 150 °C - Enables low conduction loss in high-current PFC boost inductors and LLC primary switches.
Q_g,typ	23 nC - Supports efficient gate driving with standard 1-A peak drivers while minimizing switching transition time.
E_oss	3.0 µJ @ 400 V - Reduces turn-off energy loss in hard-switched and resonant converters operating above 100 kHz.
di_F/dt	1300 A/µs - Allows fast, controlled reverse recovery in bidirectional DC-DC converters without oscillation or shoot-through risk.
t_rr	91 ns - Limits reverse recovery tail current, reducing diode-induced switching loss and EMI in phase-shifted full-bridge topologies.
I_D,pulse	44 A - Sustains short-duration overload during inrush or fault conditions in OBC primary-side power stages.

Pinout & Package

Package: PG-TO247-3 (through-hole, isolated tab). Tab is Drain (Pin 2); Gate is Pin 1; Source is Pin 3. Internal body diode anode connects to Source; cathode to Drain. Integrated ESD protection diode between Gate and Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives 0–10 V logic-level drive; 11 Ω internal gate resistance limits ringing and simplifies driver design.
Pin 2 (Tab / Drain)	High-side power output	Electrically connected to MOSFET drain and internal body diode cathode; requires thermal interface to heatsink.
Pin 3 (Source)	Reference and return path	Serves as common reference for gate drive and current sensing; connects to body diode anode and PCB ground plane.

Key Features

Feature	Design Value
Automotive qualification	AEC-Q101 qualified with 100% single-pulse avalanche testing (E_AS = 52 mJ) - ensures reliability in harsh vehicle environments.
Integrated fast body diode	Q_rr = 0.4 µC, t_rr = 91 ns - eliminates need for external anti-parallel diodes in LLC and phase-shifted full-bridge circuits.
Low switching loss profile	R_DS(on) × E_oss = 230 mΩ × 3.0 µJ = 690 pJ - enables >98% efficiency in 3.3 kW OBC PFC stages at 100 kHz.
dv/dt ruggedness	120 V/ns - prevents false turn-on during high dV/dt transients in high-side switching configurations.
Thermal performance	R_thJC = 1.99 °C/W - allows 63 W power dissipation at T_C = 25 °C, supporting compact heatsink designs in space-constrained OBC modules.

Applications

On-Board Charger (OBC) PFC Stage

Bi-Directional DC-DC Converter

Use Scenario: Boost PFC front-end in 11 kW EV on-board charger converting AC grid to 400–475 V DC bus.

IC Role / Device Role / Timing Role: High-side switching element in continuous conduction mode (CCM) boost converter operating at 65–100 kHz.

Use Value: Ultra-low Q_rr and 1300 A/µs di_F/dt enable clean zero-current switching transitions, reducing EMI and improving light-load efficiency by 1.2%.

Use Scenario: Primary-side switch in dual-active-bridge (DAB) topology transferring power between 400 V traction battery and 12 V auxiliary system.

IC Role / Device Role / Timing Role: Resonant switch in ZVS-controlled DAB with 200–350 kHz switching frequency and soft-commutated turn-on.

Use Value: Low E_oss (3.0 µJ) and fast body diode reduce dead-time losses and improve ZVS window margin across full load range.

Industrial AC-DC Power Supply

Renewable Energy Inverter

Use Scenario: Active clamp forward or LLC resonant converter in 3 kW telecom rectifier with universal AC input.

IC Role / Device Role / Timing Role: Main power switch handling 650 V blocking and 11 A continuous current with 44 A pulse capability.

Use Value: 150 °C max junction temperature and 1.99 °C/W R_thJC support derating-free operation in fanless enclosures up to 60 °C ambient.

Use Scenario: DC-link switch in string-level solar microinverter interfacing 600 V PV array to 230 V AC grid.

IC Role / Device Role / Timing Role: High-voltage bridge leg switch in unidirectional DC-AC inversion with partial-sine modulation.

Use Value: Avalanche-rated ruggedness (52 mJ) withstands lightning-induced surges and grid fault transients without clamping circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage Superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW65N60DM6	R_DS(on) = 60 mΩ (higher), Q_g = 45 nC (higher), no integrated fast diode, AEC-Q101 not claimed	Requires external SiC Schottky for resonant operation; better suited for non-automotive industrial SMPS	Select when cost sensitivity outweighs automotive qualification and diode integration needs.
IXFH60N60X3	R_DS(on) = 60 mΩ, Q_rr = 1.2 µC (3× higher), E_oss = 12 µJ (4× higher), TO-247-3 but no AEC-Q101	Limited to lower-frequency (<60 kHz) hard-switched topologies due to higher recovery loss	Prefer only where legacy design reuse or vendor consolidation overrides efficiency and qualification requirements.

Compared with STW65N60DM6 and IXFH60N60X3, IPW65R230CFD7AXKSA1 delivers superior light-load efficiency in resonant converters via its ultra-low Q_rr and integrated diode, while maintaining AEC-Q101 compliance essential for automotive OBC deployment.

Availability

IPW65R230CFD7AXKSA1 is available at Aetrix Electronics and suitable for on-board chargers, bi-directional DC-DC converters, and industrial AC-DC power supplies requiring stable component supply, automotive-grade reliability, and high-voltage switching performance.

Supply support for IPW65R230CFD7AXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification aligned to IATF 16949.

This device belongs to the CoolMOS™ CFD7A product line-engineered specifically for automotive on-board chargers and high-efficiency resonant DC-DC conversion, emphasizing robustness at 475 V battery systems and seamless integration into AEC-Q101-compliant power architectures.

FAQ

Is IPW65R230CFD7AXKSA1 suitable for linear-mode operation?

No. Infineon explicitly advises against linear-mode operation for this device. The datasheet states "We do not recommend using the CoolMOS mentioned in this datasheet to operate in 'linear mode'" due to thermal instability and potential failure under sustained high V_DS × I_D conditions. It is designed exclusively for switched-mode applications such as PFC and resonant converters.

What is the maximum recommended gate resistor value for reliable ZVS in a phase-shifted full-bridge?

For ZVS operation at 200–350 kHz, a gate resistor of 10.2 Ω is validated in the datasheet test conditions (td(on)/td(off) measurements). Using >15 Ω risks extending turn-on delay beyond the ZVS window, increasing switching loss. Lower values (≤8 Ω) may cause excessive gate current overshoot and require careful PCB layout to suppress ringing.

Does the integrated body diode eliminate need for external freewheeling diodes in LLC half-bridge designs?

Yes-its 1300 A/µs di_F/dt rating and 91 ns t_rr allow it to handle resonant current reversal cleanly without oscillation or voltage spikes. External diodes are unnecessary unless operating beyond 400 V bus or requiring >44 A pulsed current, where parallel devices may be needed.

How does the 1.99 °C/W R_thJC translate to practical heatsink requirements at 63 W dissipation?

At 63 W and T_j = 150 °C, with T_C = 100 °C, the allowable case-to-ambient thermal resistance is ≤0.79 °C/W. This requires a medium-performance extruded aluminum heatsink (~200 cm² surface area, 30 mm fin height) with forced airflow ≥2 m/s-or direct mounting to a cold plate in liquid-cooled OBC modules.

IPW65R230CFD7AXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 230mOhm @ 5.2A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 260µA

Gate Charge (Qg) (Max) @ Vgs:: 23 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1044 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 63W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3

IPW65R230CFD7AXKSA1 FAQ

1.How can I place an order for IPW65R230CFD7AXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPW65R230CFD7AXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPW65R230CFD7AXKSA1 reliable?

The price and inventory of IPW65R230CFD7AXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPW65R230CFD7AXKSA1 is usually 5 days.

3.What payment methods are accepted for IPW65R230CFD7AXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPW65R230CFD7AXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPW65R230CFD7AXKSA1?

IPW65R230CFD7AXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPW65R230CFD7AXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPW65R230CFD7AXKSA1?

For technical support, including IPW65R230CFD7AXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPW65R230CFD7AXKSA1 requirements.

6.How does Aetrix verify that IPW65R230CFD7AXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPW65R230CFD7AXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPW65R230CFD7AXKSA1 meets industry standards.

7.What is the process for return or replacement of IPW65R230CFD7AXKSA1?

All IPW65R230CFD7AXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPW65R230CFD7AXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPW65R230CFD7AXKSA1 part is unused and in its original packaging.

Return procedure for IPW65R230CFD7AXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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