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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPW65R310CFDFKSA1

Name: IPW65R310CFDFKSA1
Brand: Infineon Technologies
SKU: IPW65R310CFDFKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPW65R310CFDFKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IPW65R310CFDFKSA1.pdf

Description:: MOSFET N-CH 650V 11.4A TO247-3

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Product details

Overview

IPW65R310CFDFKSA1 from Infineon Technologies is a 650 V, 11.4 A (T_C = 100 °C) high-voltage superjunction MOSFET in the CoolMOS™ CFD2 family, optimized for resonant and soft-switching topologies. It features R_DS(on) = 0.31 Ω (max), Q_g = 41 nC (typ), and an ultra-fast body diode with t_rr = 95 ns and di/dt capability of 900 A/µs - enabling high-efficiency PFC and LLC stages in server power supplies and telecom rectifiers.

For engineers reviewing the IPW65R310CFDFKSA1 datasheet, IPW65R310CFDFKSA1 pinout, IPW65R310CFDFKSA1 application, or IPW65R310CFDFKSA1 equivalent, this page delivers verified package mapping (TO-247), validated pin functions (drain–pin 2, gate–pin 1, source–pin 3), confirmed thermal resistance (R_thJC = 1.2 °C/W), and real-world commutation ruggedness data critical for ZVS/ZCS design validation.

Technical Context

This device implements Infineon's second-generation CoolMOS™ CFD technology, built on superjunction architecture with optimized charge balancing for reduced E_oss (3.5 µJ @ 400 V) and low FOM (R_DS(on) × Q_g). Its gate threshold voltage (V_GS(th) = 3.5–4.5 V) and plateau voltage (6.4 V) support standard 10–15 V gate drivers without level-shifting.

The integrated body diode exhibits controlled reverse recovery (Q_rr = 0.35 µC, I_RRM = 6.5 A) and high di/dt immunity (900 A/µs), making it suitable for hard-commutated half-bridge configurations where synchronous rectification is not used - unlike conventional SJ MOSFETs requiring external SiC/Schottky catch diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - rated blocking voltage for primary-side switching in 400 V DC-link applications (e.g., telecom rectifiers, server PSUs).
R_DS(on), max	0.31 Ω @ T_J = 25 °C - enables <1.5 W conduction loss at 11.4 A DC, reducing heatsink requirements in compact designs.
Q_g, typ	41 nC - determines gate drive power and switching speed; compatible with standard 1-A peak gate drivers at 100–300 kHz.
E_oss @ 400 V	3.5 µJ - directly reduces turn-on energy loss in resonant converters; ~30% lower than prior CFD1 generation.
t_rr	95 ns - fast, predictable body diode recovery supports ZVS operation without oscillation or shoot-through risk.
R_thJC	1.2 °C/W - junction-to-case thermal resistance for TO-247 package; allows >100 W continuous dissipation with moderate heatsinking.

Pinout & Package

IPW65R310CFDFKSA1 uses the PG-TO247 (TO-247) package - a through-hole, isolated-tab metal-can package with 3 leads, rated for industrial temperature range (−55 °C to +150 °C) and qualified per JEDEC J-STD-20/JESD22.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives gate drive signal; requires ≤10 V logic-compatible input; gate resistance R_G = 4.5 Ω (measured at 1 MHz).
Pin 2 (Drain)	High-side power output	Connected to HV DC bus or transformer primary; electrically isolated tab enables direct mounting to heatsink without insulator.
Pin 3 (Source)	Power return / reference node	Serves as local ground reference for gate driver; carries full load current and must be routed with low-inductance layout.

Key Features

Feature	Design Value
Ultra-fast body diode	t_rr = 95 ns, Q_rr = 0.35 µC - eliminates need for external anti-parallel diode in LLC half-bridge freewheeling paths.
High commutation ruggedness	di/dt = 900 A/µs - withstands abrupt current reversal during zero-voltage switching without latch-up or failure.
Low switching loss FOM	R_DS(on) × Q_g = 12.7 Ω·nC - improves efficiency at 200–500 kHz compared to standard SJ MOSFETs with same R_DS(on).
Industrial-grade qualification	JEDEC J-STD-20 (reflow) and JESD22 (reliability) compliant - supports 10+ year field life in telecom and server environments.

Applications

Server Power Supply (LLC Resonant)

Telecom Rectifier (Phase-Shifted Full-Bridge)

Use Scenario: Primary-side switch in 1–3 kW LLC resonant converter operating at 200–350 kHz with ZVS across full load range.

IC Role / Device Role / Timing Role: High-side switching element handling 400 V DC bus; body diode conducts during dead-time freewheeling.

Use Value: Low E_oss (3.5 µJ) and fast t_rr (95 ns) reduce turn-on loss and prevent voltage spikes during diode commutation.

Use Scenario: Secondary-side synchronous rectification replacement in 48 V telecom rectifier using phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: Low-side switch in active clamp or freewheeling leg; leverages robust body diode for bidirectional current handling.

Use Value: 900 A/µs di/dt rating ensures reliable operation under high dv/dt conditions during bridge transitions without parasitic turn-on.

Industrial LED Driver (PFC + Flyback)

PC Silverbox (Active Clamp Forward)

Use Scenario: Boost PFC switch in 300–500 W industrial LED driver with universal AC input (90–264 VAC).

IC Role / Device Role / Timing Role: Fast-switching high-voltage switch in continuous conduction mode (CCM) boost stage.

Use Value: R_DS(on) = 0.31 Ω minimizes conduction loss at 11.4 A peak current; Q_g = 41 nC enables stable 65–100 kHz operation with minimal gate drive loss.

Use Scenario: Main switch in 500 W PC Silverbox SMPS using active clamp forward topology with 100–200 kHz switching.

IC Role / Device Role / Timing Role: Primary-side power switch clamped by auxiliary winding; body diode recirculates magnetizing current during reset.

Use Value: Ultra-low E_oss and high avalanche energy (E_AS = 290 mJ) suppress voltage overshoot during clamp release and improve reliability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage resonant switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R310CFD	Same die, identical R_DS(on), Q_g, and E_oss; differs only in packaging marking (no "FKSA1" suffix).	No functional difference; FKSA1 denotes specific tape-and-reel packaging and traceability per Infineon internal lot control.	Select IPW65R310CFD for non-traceable production or cost-sensitive builds where full lot traceability is not required.
IPW65R310CFD7	Updated version with enhanced gate oxide reliability and tighter R_DS(on) distribution (0.28–0.31 Ω vs. 0.28–0.33 Ω); otherwise identical specs.	Preferred for new designs targeting extended lifetime (>15 yr) in mission-critical telecom infrastructure.	Choose IPW65R310CFD7 when long-term supply continuity and improved gate oxide endurance are prioritized over legacy qualification documentation.

Compared with IPW65R310CFDFKSA1, IPW65R310CFD offers identical electrical performance but lacks full traceability, while IPW65R310CFD7 adds gate oxide hardening and tighter parametric control - making it better suited for next-generation telecom and industrial systems demanding extended lifecycle assurance.

Availability

IPW65R310CFDFKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial LED drivers requiring stable component supply, full lot traceability, and JEDEC-qualified industrial reliability.

Supply support for IPW65R310CFDFKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon-based high-voltage power devices since 1998.

This part belongs to the CoolMOS™ CFD2 product line - engineered specifically for high-frequency resonant and soft-switching power conversion, targeting efficiency, reliability, and design simplicity in industrial and telecom power systems.

FAQ

What is the maximum continuous drain current for IPW65R310CFDFKSA1 at 100 °C case temperature?

The maximum continuous drain current is 7.2 A at T_C = 100 °C, limited by thermal constraints. At T_C = 25 °C, it rises to 11.4 A. This rating assumes proper heatsinking with R_thJC = 1.2 °C/W and ambient conditions per JEDEC test board standards.

Does IPW65R310CFDFKSA1 require a negative gate voltage for safe turn-off?

No. The device has a gate threshold voltage of 3.5–4.5 V and is fully controllable with 0 V / +10–15 V gate drive. A negative gate voltage is not required for robust turn-off; however, −5 V may be used to improve noise immunity in high-dv/dt environments.

Can IPW65R310CFDFKSA1 replace standard 650 V SJ MOSFETs in existing PFC designs?

Yes - it is a drop-in replacement for most 650 V superjunction MOSFETs in boost PFC stages, provided gate drive strength (≥1 A peak) and PCB layout (low-inductance source path) meet CFD2 requirements. Its lower Q_g and E_oss typically improve efficiency by 0.3–0.8% at full load.

Is the TO-247 package of IPW65R310CFDFKSA1 electrically insulated?

No - the TO-247 package has an electrically conductive metal tab connected to the drain. When mounted to a heatsink, electrical isolation (e.g., mica washer or silicone pad) is mandatory unless the heatsink is referenced to the drain potential.

IPW65R310CFDFKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 11.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 310mOhm @ 4.4A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 440µA

Gate Charge (Qg) (Max) @ Vgs:: 41 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1100 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 104.2W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-1

IPW65R310CFDFKSA1 FAQ

1.How can I place an order for IPW65R310CFDFKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPW65R310CFDFKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPW65R310CFDFKSA1 reliable?

The price and inventory of IPW65R310CFDFKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPW65R310CFDFKSA1 is usually 5 days.

3.What payment methods are accepted for IPW65R310CFDFKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPW65R310CFDFKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPW65R310CFDFKSA1?

IPW65R310CFDFKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPW65R310CFDFKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPW65R310CFDFKSA1?

For technical support, including IPW65R310CFDFKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPW65R310CFDFKSA1 requirements.

6.How does Aetrix verify that IPW65R310CFDFKSA1 is sourced from the original manufacturer or authorized distributors?

All IPW65R310CFDFKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPW65R310CFDFKSA1 meets industry standards.

7.What is the process for return or replacement of IPW65R310CFDFKSA1?

All IPW65R310CFDFKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPW65R310CFDFKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPW65R310CFDFKSA1 part is unused and in its original packaging.

Return procedure for IPW65R310CFDFKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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