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Infineon Technologies IPW95R310PFD7XKSA1

Part No.:
IPW95R310PFD7XKSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-247-3
Datasheet:
AetrixIPW95R310PFD7XKSA1.pdf
Description:
MOSFET N-CH 950V 17.5A TO247-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,433

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Product details

Overview

IPW95R310PFD7XKSA1 from Infineon Technologies is a 950 V, 310 mΩ superjunction N-channel MOSFET in PG-TO247-3 package with integrated ultra-fast body diode, optimized for LLC and ZVS resonant topologies in industrial SMPS and high-voltage lighting power supplies. It delivers 17.5 A continuous drain current, 61 nC total gate charge, and industry-leading 0.78 µC reverse recovery charge (Qrr) at 400 V.

For engineers reviewing the IPW95R310PFD7XKSA1 datasheet, IPW95R310PFD7XKSA1 pinout, IPW95R310PFD7XKSA1 application, or IPW95R310PFD7XKSA1 equivalent, key selection criteria include hard commutation robustness (diF/dt = 1300 A/µs), low Eoss (4.2 µJ @ 500 V), tight VGS(th) tolerance (±0.5 V), and JEDEC-qualified industrial reliability.

Technical Context

This CoolMOS™ PFD7 device uses charge-compensated superjunction architecture with field-plated gate structure to achieve simultaneous reduction in RDS(on), Qg, Ciss, and Eoss while maintaining 950 V blocking capability. Its integrated fast body diode enables zero-voltage switching without external diode replacement.

The MOSFET features a 3 V nominal gate threshold voltage with ±0.5 V variation across temperature and process, enabling stable turn-on in high-noise industrial environments. Its 1.00 °C/W junction-to-case thermal resistance supports high-power-density designs when mounted on heatsinks with M3/M3.5 screws.

Key Specifications

ParameterValue and Actual Design Meaning
VDS950 V - Enables direct use in 800 V DC bus systems with 15% safety margin for surge and ripple.
RDS(on), max310 mΩ @ Tj = 25°C - Defines conduction loss at rated current; increases to 640 mΩ at 150°C per datasheet.
Qg, typ61 nC - Determines gate driver power requirement and switching speed control in resonant converters.
Eoss @ 500 V4.2 µJ - Quantifies energy lost during turn-off; critical for efficiency in high-frequency LLC operation.
Qrr0.78 µC @ VR = 400 V - Lowest published Qrr in 950 V SJ MOSFET class, reducing diode-related losses in soft-switching.
diF/dt1300 A/µs - Confirmed hard commutation robustness for reliable operation in asymmetric half-bridge and phase-shifted full-bridge.
Tj max150 °C - JEDEC-qualified for continuous industrial operation; enables derating up to 125 °C ambient with proper heatsinking.

Pinout & Package

IPW95R310PFD7XKSA1 is housed in PG-TO247-3 package with isolated tab (Drain-connected), standard lead pitch, and screw-mount compatibility (M3/M3.5). The tab serves as the Drain terminal and provides primary thermal path to heatsink.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Lead)GateControl input; requires <30 V dynamic rating; 1 Ω typical gate resistance limits ringing.
Pin 2 (Tab)DrainMain high-voltage power terminal; electrically connected to metal tab for thermal and electrical conduction.
Pin 3 (Lead)SourcePower return and gate reference node; forms common source path for internal body diode conduction.

Key Features

FeatureDesign Value
Integrated ultra-fast body diodeQrr = 0.78 µC enables reliable zero-current switching in LLC without external diode snubbing.
Tight VGS(th) distribution±0.5 V variation ensures consistent turn-on timing across production lots and temperature range.
Low Eoss × RDS(on) FoMBest-in-class figure-of-merit reduces combined conduction and switching losses in 100–500 kHz SMPS.
ESD protectionHBM Class 2 (≥2 kV) minimizes handling damage during PCB assembly and rework.
JEDEC industrial qualificationValidated for 150 °C Tj continuous operation and thermal cycling per JESD22-A104.

Applications

Industrial PFC StageLLC Resonant Converter

Use Scenario: Boost PFC stage in 1–3 kW industrial power supplies operating from 3-phase 400 V AC input.

IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost converter; handles 950 V DC link stress.

Use Value: Low Qrr and fast diF/dt prevent shoot-through during zero-current turn-on, improving system reliability at 65 kHz.

Use Scenario: Primary-side switch in 1.5 kW server PSU LLC resonant half-bridge with 400 V nominal bus.

IC Role / Device Role / Timing Role: Resonant switch enabling ZVS over full load range; leverages integrated diode for freewheeling.

Use Value: 4.2 µJ Eoss and 61 nC Qg reduce switching loss by ≥12% vs. prior P7 generation at 300 kHz.

ZVS Phase-Shifted Full-BridgeHigh-Voltage LED Driver

Use Scenario: Primary switch in telecom rectifier PSUs using phase-shifted FB topology with 800 V DC bus.

IC Role / Device Role / Timing Role: High-side bridge arm switch; conducts during lagging leg ZVS transition.

Use Value: 1300 A/µs diF/dt rating ensures robustness against high di/dt during hard commutation events.

Use Scenario: Switch-mode driver for outdoor LED streetlights with 700–1000 V DC output requirements.

IC Role / Device Role / Timing Role: Main switching element in flyback or active clamp forward topology handling 950 V isolation.

Use Value: 950 V VDS rating eliminates need for series stacking; 150 °C Tj rating supports sealed outdoor enclosure operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IPW95R360PFD7RDS(on) = 360 mΩ; 54 nC Qg; identical 950 V rating and PFD7 body diodeHigher conduction loss but lower gate drive demand; better suited for lower-frequency (<100 kHz) PFC stagesSelect when thermal budget allows higher RDS(on) in exchange for reduced driver complexity.
IPP95R310P7No integrated fast diode; Qrr = 2.1 µC; 72 nC Qg; same RDS(on) and VDSNot suitable for resonant topologies requiring low Qrr; limited to hard-switched applicationsChoose only for cost-sensitive non-resonant SMPS where diode recovery is externally managed.

Compared with IPW95R360PFD7 and IPP95R310P7, IPW95R310PFD7XKSA1 uniquely combines lowest Qrr, tightest VGS(th) tolerance, and JEDEC industrial qualification-making it the sole option qualified for high-reliability LLC and ZVS designs above 200 kHz.

Availability

IPW95R310PFD7XKSA1 is available at Aetrix Electronics and suitable for industrial SMPS, high-voltage LED drivers, and telecom rectifiers requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IPW95R310PFD7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global manufacturing and R&D infrastructure.

This device belongs to the CoolMOS™ PFD7 product line, engineered specifically for high-efficiency, high-reliability resonant-mode power conversion in industrial and professional lighting applications.

FAQ

What is the maximum recommended gate resistor value for reliable ZVS in an LLC half-bridge?

Based on datasheet test conditions (RG = 5.3 Ω, VDD = 400 V, ID = 10.4 A), a gate resistor of 4.7–6.8 Ω is recommended to balance switching speed and ringing suppression. Higher values (>10 Ω) delay turn-on and risk incomplete ZVS at light loads; lower values (<3.3 Ω) increase gate driver stress without measurable efficiency gain.

Does the internal body diode support bidirectional current in synchronous rectification?

No-the internal body diode is unidirectional and optimized for reverse recovery in high-di/dt resonant freewheeling, not synchronous rectification. Its forward voltage is 1.1 V at 10.4 A and 25°C, but it lacks the low VF and controlled timing required for SR control; external MOSFETs remain necessary for synchronous rectification.

Can IPW95R310PFD7XKSA1 replace older CoolMOS™ P6 devices in existing designs?

Yes, with layout verification: pin-compatible in PG-TO247-3, same 950 V rating and 17.5 A ID, but lower Qg (61 nC vs. ~75 nC) and significantly lower Qrr (0.78 µC vs. >2 µC) require gate driver slew rate adjustment and may reduce snubber losses. Thermal design remains valid due to identical RthJC = 1.00 °C/W.

Is the tab electrically isolated from the package leads?

No-the metal tab is internally connected to Pin 2 (Drain) and is not electrically isolated. It must be mounted to a heatsink with insulating hardware (e.g., silicone pad + shoulder washer) when the heatsink is at a different potential than the drain node.

IPW95R310PFD7XKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
950 V
Current - Continuous Drain (Id) @ 25°C:
17.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
310mOhm @ 10.4A, 10V
Vgs(th) (Max) @ Id:
3.5V @ 520µA
Gate Charge (Qg) (Max) @ Vgs:
61 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1765 pF @ 400 V
FET Feature:
-
Power Dissipation (Max):
125W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO247-3-41

IPW95R310PFD7XKSA1 FAQ

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Please submit a Request for Quotation (RFQ) for IPW95R310PFD7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of IPW95R310PFD7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPW95R310PFD7XKSA1 is usually 5 days.

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5.How can I obtain technical support or documentation for IPW95R310PFD7XKSA1?

For technical support, including IPW95R310PFD7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPW95R310PFD7XKSA1 requirements.

6.How does Aetrix verify that IPW95R310PFD7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPW95R310PFD7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPW95R310PFD7XKSA1 meets industry standards.

7.What is the process for return or replacement of IPW95R310PFD7XKSA1?

All IPW95R310PFD7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPW95R310PFD7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPW95R310PFD7XKSA1 part is unused and in its original packaging.

Return procedure for IPW95R310PFD7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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