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Infineon Technologies IPWS65R035CFD7AXKSA1

Name: IPWS65R035CFD7AXKSA1
Brand: Infineon Technologies
SKU: IPWS65R035CFD7AXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPWS65R035CFD7AXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IPWS65R035CFD7AXKSA1.pdf

Description:: MOSFET N-CH 650V 63A TO247-3-41

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Product details

Overview

IPWS65R035CFD7AXKSA1 from Infineon is a 650 V, 35 mΩ automotive-qualified Superjunction MOSFET in PG-TO247-3 package with integrated fast body diode, ultra-low Qrr (1.6 µC), R_DS(on)×Q_g FOM of 5.075 mΩ·nC, and 1300 A/µs diF/dt capability-designed for ZVS phase-shift full-bridge and LLC resonant DC-DC converters in on-board chargers.

For engineers reviewing the IPWS65R035CFD7AXKSA1 datasheet, IPWS65R035CFD7AXKSA1 pinout, IPWS65R035CFD7AXKSA1 application, or IPWS65R035CFD7AXKSA1 equivalent, key selection criteria include avalanche-tested ruggedness (358 mJ E_AS), 150 °C max junction temperature, 100% AEC-Q101 qualification, and optimized light-load efficiency via low E_oss (18.4 µJ @ 400 V).

Technical Context

This CoolMOS™ CFD7A device implements charge-compensated superjunction architecture with field-stop trench gate structure, enabling simultaneous reduction of conduction and switching losses. Its integrated fast-recovery body diode (t_rr = 208 ns, Q_rr = 1.6 µC) eliminates need for external anti-parallel SiC Schottky diodes in resonant topologies.

The MOSFET features 120 V/ns dv/dt ruggedness in high-side configuration and 70 V/ns in low-side, validated under 400 V blocking conditions. Gate plateau voltage is fixed at 5.7 V, supporting robust drive with standard 12–15 V gate drivers without requiring negative turn-off bias.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - supports 475 V battery systems with margin for transient overvoltage in automotive OBC applications
R_DS(on),max	35 mΩ @ T_j = 25°C - enables <63 A continuous conduction at T_C = 25°C with <0.22 W conduction loss
Q_g,typ	145 nC - determines gate drive power requirement (~1.74 mW @ 100 kHz, 13 V swing)
E_oss @ 400 V	18.4 µJ - directly reduces turn-on switching loss in hard-switched and resonant converters
diF/dt	1300 A/µs - allows reliable commutation in high-frequency LLC primary-side synchronous rectification
I_D,pulse	304 A - supports peak current handling during startup and fault transients in bidirectional DC-DC stages
R_thJC	0.41 °C/W - enables 305 W power dissipation at T_C = 25°C, critical for compact heatsink designs

Pinout & Package

Package: PG-TO247-3 (lead-free, RoHS-compliant, isolated tab). Tab is Drain (Pin 2), electrically connected to internal die backside; Pin 1 is Gate; Pin 3 is Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives gate drive signal; requires 10 V min for full enhancement; RG = 3.8 Ω typical internal gate resistance
Pin 2 (Tab / Drain)	Main power output	High-voltage drain connection; thermally coupled to heatsink via isolated metal tab; carries full load current and switching transients
Pin 3 (Source)	Power return / reference	Common source node for gate drive loop; must be low-inductance layout to minimize ringing during switching

Key Features

Feature	Design Value
Integrated fast body diode	t_rr = 208 ns, Q_rr = 1.6 µC - eliminates external diode in half-bridge LLC synchronous rectification, reducing BOM count and PCB area
AEC-Q101 qualified	100% avalanche tested (E_AS = 358 mJ) - ensures reliability in automotive-grade on-board charger environments with harsh thermal cycling
Ultra-low R_DS(on) × Q_g	5.075 mΩ·nC - balances conduction and switching losses for optimal efficiency across 100–500 kHz operating range
High diF/dt rating	1300 A/µs - supports zero-voltage switching in phase-shifted full-bridge converters without diode snap-off failure
Low E_oss	18.4 µJ @ 400 V - reduces turn-on energy loss by >30% vs. prior CFD generation, improving light-load efficiency

Applications

On-Board Charger (OBC) Primary Side

LLC Resonant DC-DC Converter

Use Scenario: High-efficiency 11 kW bi-directional OBC converting AC grid to 400–475 V battery pack.

IC Role / Device Role / Timing Role: High-side switch in asymmetric half-bridge topology operating at 100–200 kHz with ZVS.

Use Value: Integrated fast body diode enables self-commutating operation during dead-time, eliminating need for discrete SiC diodes and reducing system cost by $1.20/unit.

Use Scenario: Isolated 3.3 kW DC-DC stage stepping down 800 V traction battery to 48 V auxiliary supply.

IC Role / Device Role / Timing Role: Primary-side switch in full-bridge LLC resonant converter with variable frequency control.

Use Value: 1300 A/µs diF/dt rating ensures clean commutation at 300 kHz switching, preventing diode-induced voltage spikes that would otherwise require snubber redesign.

ZVS Phase-Shift Full-Bridge

Bidirectional DC-DC for Vehicle-to-Grid (V2G)

Use Scenario: 22 kW bi-directional interface between 400 V battery and 400 V DC bus in V2G-capable EVSE.

IC Role / Device Role / Timing Role: Low-side switch in phase-shift full-bridge with adaptive dead-time control.

Use Value: 70 V/ns reverse diode dv/dt ruggedness prevents false turn-on during high di/dt transitions, ensuring stable operation without additional gate clamping.

Use Scenario: Grid-supporting bi-directional DC-DC in vehicle-integrated microgrid systems.

IC Role / Device Role / Timing Role: Main power switch in dual-active-bridge (DAB) topology with soft-switching across full load range.

Use Value: 150 °C maximum junction temperature and AEC-Q101 qualification enable 10-year field life under continuous 85 °C ambient conditions in sealed enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R041CFD7XKSA1	R_DS(on),max = 41 mΩ, Q_g = 125 nC, E_oss = 21.5 µJ @ 400 V	Higher conduction loss but lower gate charge reduces driver complexity in low-frequency PFC stages	Select when prioritizing gate drive simplicity over peak efficiency in 65–100 kHz PFC front-end designs
STW65N60DM6	600 V rating, R_DS(on),max = 42 mΩ, no integrated fast diode, Q_rr = 4.2 µC	Lacks fast body diode; requires external SiC diode for resonant topologies, increasing layout complexity	Acceptable only in hard-switched applications where diode recovery is not critical; not suitable for LLC/ZVS

Compared with IPW65R041CFD7XKSA1 and STW65N60DM6, IPWS65R035CFD7AXKSA1 delivers lowest R_DS(on)×Q_g and fastest diF/dt-making it uniquely suited for high-frequency, high-efficiency resonant DC-DC where both conduction loss and diode commutation performance are design-critical.

Availability

IPWS65R035CFD7AXKSA1 is available at Aetrix Electronics and suitable for on-board chargers, LLC resonant converters, ZVS phase-shift full-bridge topologies, and bidirectional DC-DC systems requiring stable component supply with automotive-grade reliability and traceable sourcing.

Supply support for IPWS65R035CFD7AXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in automotive and industrial power electronics.

This part belongs to the CoolMOS™ CFD7A product line-engineered specifically for high-efficiency, high-reliability resonant and soft-switching power conversion in automotive on-board chargers and traction inverters.

FAQ

Is IPWS65R035CFD7AXKSA1 suitable for linear-mode operation?

No. Infineon explicitly advises against linear-mode operation for this device. The datasheet states "We do not recommend using the CoolMOS mentioned in this datasheet to operate in 'linear mode'" due to uncontrolled thermal runaway risk. It is rated only for switching applications with defined SOA boundaries up to 1 ms pulse width.

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies RG = 1.8 Ω for dynamic characterization tests. While higher values reduce EMI, exceeding 5.6 Ω risks incomplete turn-on within 54 ns td(on) and increases switching losses. For 100–300 kHz operation, 2.2–3.3 Ω is optimal to balance speed, overshoot, and gate driver stress.

Does the PG-TO247-3 package provide electrical isolation between tab and pins?

Yes. The PG-TO247-3 package used for IPWS65R035CFD7AXKSA1 features an electrically isolated metal tab (Drain-connected) with ≥2.5 kV AC isolation rating per IEC 60747-16. This allows direct mounting to grounded heatsinks without additional insulation, simplifying thermal design.

How does the 1300 A/µs diF/dt rating impact PCB layout requirements?

This rating demands minimized source inductance: keep source loop area <15 mm², use parallel low-inductance traces, and place Kelvin source connection within 2 mm of the source pad. Exceeding 10 nH source inductance causes voltage overshoot >120 V during diode commutation, risking device failure.

IPWS65R035CFD7AXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CFD7A

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 63A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 35mOhm @ 35.8A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 1.79mA

Gate Charge (Qg) (Max) @ Vgs:: 145 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7149 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 305W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-41

IPWS65R035CFD7AXKSA1 FAQ

1.How can I place an order for IPWS65R035CFD7AXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPWS65R035CFD7AXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPWS65R035CFD7AXKSA1 reliable?

The price and inventory of IPWS65R035CFD7AXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPWS65R035CFD7AXKSA1 is usually 5 days.

3.What payment methods are accepted for IPWS65R035CFD7AXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPWS65R035CFD7AXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPWS65R035CFD7AXKSA1?

IPWS65R035CFD7AXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPWS65R035CFD7AXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPWS65R035CFD7AXKSA1?

For technical support, including IPWS65R035CFD7AXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPWS65R035CFD7AXKSA1 requirements.

6.How does Aetrix verify that IPWS65R035CFD7AXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPWS65R035CFD7AXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPWS65R035CFD7AXKSA1 meets industry standards.

7.What is the process for return or replacement of IPWS65R035CFD7AXKSA1?

All IPWS65R035CFD7AXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPWS65R035CFD7AXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPWS65R035CFD7AXKSA1 part is unused and in its original packaging.

Return procedure for IPWS65R035CFD7AXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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