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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPWS65R050CFD7AXKSA1

Name: IPWS65R050CFD7AXKSA1
Brand: Infineon Technologies
SKU: IPWS65R050CFD7AXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPWS65R050CFD7AXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IPWS65R050CFD7AXKSA1.pdf

Description:: MOSFET N-CH 650V 45A TO247-3-41

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Product details

Overview

IPWS65R050CFD7AXKSA1 from Infineon is a 650 V, 50 mΩ automotive-qualified Superjunction MOSFET in PG-TO247-3 package with integrated fast body diode, ultra-low Qrr (1.2 µC), and 100% avalanche tested. It delivers R_DS(on) × Q_g and R_DS(on) × E_oss FOMs optimized for ZVS phase-shift full-bridge and LLC resonant DC-DC converters in on-board chargers.

For engineers reviewing the IPWS65R050CFD7AXKSA1 datasheet, IPWS65R050CFD7AXKSA1 pinout, IPWS65R050CFD7AXKSA1 application, or IPWS65R050CFD7AXKSA1 equivalent, key selection criteria include di_F/dt capability (1300 A/µs), E_oss at 400 V (13.0 µJ), and AEC-Q101 qualification for bidirectional battery charging systems.

Technical Context

This CoolMOS™ CFD7A device employs charge compensation technology with field-stop trench structure to achieve simultaneous low conduction loss (R_DS(on) = 50 mΩ max) and low switching loss (Q_g = 102 nC typ, E_oss = 13.0 µJ @ 400 V). Its integrated fast body diode enables reliable zero-voltage switching in hard-commutated topologies without external SiC diodes.

The MOSFET features 120 V/ns dv/dt ruggedness and 1300 A/µs di_F/dt rating-critical for high-frequency resonant operation under dynamic load transients. Thermal resistance R_thJC is 0.55 °C/W, supporting continuous 45 A drain current at T_C = 25°C with robust 248 mJ single-pulse avalanche energy.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Withstands DC bus voltages up to 475 V in battery systems with margin for transient overvoltage.
R_DS(on),max	50 mΩ @ T_j = 25°C - Enables low conduction loss in high-current PFC and DC-DC stages.
Q_g,typ	102 nC - Supports efficient gate drive design for 100–300 kHz resonant switching with minimal driver loss.
E_oss @ 400 V	13.0 µJ - Reduces turn-off energy loss and enables higher efficiency in soft-switching topologies.
di_F/dt	1300 A/µs - Ensures stable reverse recovery in high-di/dt LLC secondary-side synchronous rectification.
trr	177 ns - Fast body diode recovery minimizes commutation loss and voltage overshoot during ZVS transitions.
T_j max	150 °C - Rated for automotive under-hood environments with extended thermal headroom.

Pinout & Package

Package: PG-TO247-3 (through-hole, isolated tab). Tab is Drain (Pin 2); Gate is Pin 1; Source is Pin 3. Internal body diode anode connects to Source, cathode to Drain.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives 10 V gate drive to fully enhance channel; plateau voltage 5.7 V ensures stable Miller region control.
Pin 2 (Tab / Drain)	High-side power output	Electrically connected to MOSFET drain and internal body diode cathode; requires insulated mounting due to high-voltage potential.
Pin 3 (Source)	Reference and return path	Serves as common reference for gate drive and current sensing; connects internally to body diode anode.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain and charging applications per stress test requirements including HTGB, HTRB, and UIS.
Integrated fast body diode	Q_rr = 1.2 µC and trr = 177 ns enable reliable synchronous rectification without external diode in LLC half-bridge secondaries.
Ultra-low R_DS(on) × Q_g FOM	5.1 Ω·nC - Balances conduction and switching loss for optimal efficiency across light-to-full load in 400 V DC-DC stages.
100% single-pulse avalanche tested	248 mJ rated energy withstand - guarantees robustness against inductive switching surges in unregulated PFC front-ends.
Low E_oss (13.0 µJ @ 400 V)	Reduces turn-off loss by >35% vs. prior CFD generation - critical for maintaining ZVS across wide load ranges.

Applications

On-Board Charger (OBC) PFC Stage

LLC Resonant DC-DC Converter

Use Scenario: Boost-type active PFC in 11 kW bi-directional OBCs operating from 350–475 V DC bus.

IC Role / Device Role / Timing Role: High-side switch in interleaved boost stage handling 45 A continuous current at 100 kHz.

Use Value: Low R_DS(on) and high di_F/dt ensure stable boost operation under grid transients and regenerative braking surges.

Use Scenario: Primary-side switch in 6.6 kW LLC converter converting 400 V battery to 400 V traction inverter supply.

IC Role / Device Role / Timing Role: Zero-voltage switched primary MOSFET operating at 200–300 kHz with 50% duty cycle.

Use Value: Ultra-low E_oss and fast body diode enable consistent ZVS across 10–100% load, reducing total losses by 12% vs. CFD6.

ZVS Phase-Shift Full-Bridge (PSFB)

Bidirectional DC-DC for Vehicle-to-Grid (V2G)

Use Scenario: High-efficiency 22 kW PSFB used in modular charging stations interfacing AC grid and EV battery.

IC Role / Device Role / Timing Role: Lagging-leg switch subjected to hard commutation and high di/dt during phase shift transitions.

Use Value: 120 V/ns dv/dt ruggedness and 1300 A/µs di_F/dt prevent false turn-on and oscillation during dead-time commutation.

Use Scenario: Bidirectional 15 kW DC-DC linking 400 V battery and 800 V fast-charging infrastructure.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side full-bridge during reverse power flow (grid-to-vehicle).

Use Value: Integrated body diode with 1.1 V V_SD and low Q_rr eliminates need for discrete SiC diodes, reducing BOM count and layout complexity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage resonant switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R041CFD7XKSA1	R_DS(on) = 41 mΩ (lower), Q_g = 115 nC (higher), same package and AEC-Q101 rating	Better conduction loss but higher gate drive loss; requires stronger gate driver for same switching speed	Select when system prioritizes full-load efficiency over light-load switching loss and gate drive complexity
IPP65R095C7XKSA1	R_DS(on) = 95 mΩ (higher), Q_g = 62 nC (lower), same CFD7 platform but non-automotive grade	Lacks AEC-Q101 qualification; lower cost but unsuitable for production automotive OBCs	Acceptable for industrial or prototyping use where automotive reliability is not mandated

Compared with IPW65R041CFD7XKSA1, this part trades 9 mΩ higher R_DS(on) for 13 nC lower Q_g, improving gate drive efficiency and easing thermal management in space-constrained OBC modules; versus IPP65R095C7XKSA1, it adds AEC-Q101 validation and faster body diode recovery-essential for production vehicle integration.

Availability

IPWS65R050CFD7AXKSA1 is available at Aetrix Electronics and suitable for on-board chargers, LLC resonant converters, ZVS phase-shift full-bridge topologies, and bidirectional DC-DC systems requiring stable component supply with automotive-grade traceability.

Supply support for IPWS65R050CFD7AXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

This device belongs to the CoolMOS™ CFD7A product line-designed specifically for high-reliability, high-efficiency resonant and soft-switched power conversion in electric vehicle charging and traction systems.

FAQ

Is IPWS65R050CFD7AXKSA1 suitable for linear-mode operation?

No. Infineon explicitly advises against linear-mode operation for this device. The datasheet states "We do not recommend using the CoolMOS mentioned in this datasheet to operate in 'linear mode'" due to thermal instability risks. For applications requiring controlled analog conduction, contact Infineon's technical support for validated alternatives or derating guidance.

What is the maximum recommended gate resistor for ZVS operation at 250 kHz?

A gate resistor of 3.3 Ω is validated in the datasheet for 250 kHz switching (td(on) = 34 ns, td(off) = 115 ns). Using RG > 5.6 Ω increases switching time beyond ZVS window in LLC topologies, raising turn-on loss. For 250 kHz designs, RG = 3.3 Ω with 13 V gate drive ensures optimal timing alignment between voltage zero-crossing and current rise.

Does the PG-TO247-3 package require thermal interface material on the tab?

Yes. The isolated tab must be mounted to a heatsink using thermally conductive, electrically insulating material (e.g., ceramic washer or silicone pad) to maintain creepage/clearance while achieving R_thJC = 0.55 °C/W. Direct metal-to-metal mounting violates isolation and voids AEC-Q101 compliance.

How does the body diode performance compare to discrete SiC Schottky diodes?

This MOSFET's body diode achieves V_SD = 1.1 V and Q_rr = 1.2 µC at 24.8 A-comparable to 650 V SiC Schottkys in forward drop, but with higher Q_rr. However, its monolithic integration eliminates parasitic inductance, enabling cleaner commutation in compact layouts where discrete diode placement would degrade ZVS behavior.

IPWS65R050CFD7AXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CFD7A

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 45A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 50mOhm @ 24.8A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 1.24mA

Gate Charge (Qg) (Max) @ Vgs:: 102 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4975 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 227W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-41

IPWS65R050CFD7AXKSA1 FAQ

1.How can I place an order for IPWS65R050CFD7AXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPWS65R050CFD7AXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPWS65R050CFD7AXKSA1 reliable?

The price and inventory of IPWS65R050CFD7AXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPWS65R050CFD7AXKSA1 is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPWS65R050CFD7AXKSA1 transactions.

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4.How is shipping managed for IPWS65R050CFD7AXKSA1?

IPWS65R050CFD7AXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPWS65R050CFD7AXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPWS65R050CFD7AXKSA1?

For technical support, including IPWS65R050CFD7AXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPWS65R050CFD7AXKSA1 requirements.

6.How does Aetrix verify that IPWS65R050CFD7AXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPWS65R050CFD7AXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPWS65R050CFD7AXKSA1 meets industry standards.

7.What is the process for return or replacement of IPWS65R050CFD7AXKSA1?

All IPWS65R050CFD7AXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPWS65R050CFD7AXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPWS65R050CFD7AXKSA1 part is unused and in its original packaging.

Return procedure for IPWS65R050CFD7AXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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