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Infineon Technologies IPWS65R075CFD7AXKSA1

Name: IPWS65R075CFD7AXKSA1
Brand: Infineon Technologies
SKU: IPWS65R075CFD7AXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPWS65R075CFD7AXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IPWS65R075CFD7AXKSA1.pdf

Description:: MOSFET N-CH 650V 32A TO247-3-41

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Product details

Overview

IPWS65R075CFD7AXKSA1 from Infineon is a 650 V, 75 mΩ automotive-qualified Superjunction MOSFET in PG-TO247-3 package with integrated fast body diode, ultra-low Q_rr (0.86 µC), and R_DS(on)×Q_g FOM optimized for ZVS phase-shift full-bridge and LLC resonant DC-DC converters in on-board chargers.

For engineers reviewing the IPWS65R075CFD7AXKSA1 datasheet, IPWS65R075CFD7AXKSA1 pinout, IPWS65R075CFD7AXKSA1 application, or IPWS65R075CFD7AXKSA1 equivalent, key selection criteria include avalanche-tested ruggedness (164 mJ), di_F/dt capability (1300 A/µs), E_oss (8.8 µJ @ 400 V), and AEC-Q101 qualification for high-voltage battery systems up to 475 V.

Technical Context

This CoolMOS™ CFD7A device employs charge compensation technology with field-stop trench structure, enabling simultaneous reduction of conduction and switching losses. Its integrated fast-recovery body diode (t_rr = 156 ns, Q_rr = 0.86 µC) supports zero-voltage switching in hard- and soft-switching topologies without external diode supplementation.

The MOSFET delivers 139 A pulsed drain current and 32 A continuous current at T_C = 25°C, with thermal resistance R_thJC = 0.73 °C/W. Gate plateau voltage is 5.7 V, and total gate charge is 68 nC - values directly enabling precise gate driver sizing for 100–500 kHz resonant operation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Withstands DC-link voltages up to 475 V battery systems with margin for transients and cosmic radiation effects.
R_DS(on), max	75 mΩ @ T_j = 150°C - Enables low conduction loss in high-current PFC and DC-DC stages at elevated junction temperatures.
Q_g, typ	68 nC - Determines gate drive power requirement and enables efficient 100–300 kHz switching with standard isolated gate drivers.
E_oss @ 400 V	8.8 µJ - Directly impacts turn-off energy loss and supports high-frequency ZVS operation in LLC converters.
di_F/dt	1300 A/µs - Allows robust commutation in high-di/dt resonant circuits without parasitic turn-on or oscillation.
t_rr	156 ns - Fast reverse recovery minimizes dead-time loss and reduces EMI in bidirectional DC-DC converters.
Avalanche Energy	164 mJ - Confirmed single-pulse ruggedness supports reliable operation under short-circuit and overload conditions.

Pinout & Package

Package: PG-TO247-3 - Through-hole thermally enhanced package with isolated tab (Drain-connected), rated for 171 W power dissipation at T_C = 25°C and 0.73 °C/W junction-to-case thermal resistance.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives gate drive signal; requires 10 V min for full enhancement; gate resistance R_G = 5.8 Ω typical.
Pin 2 (Drain / Tab)	High-side power output	Electrically connected to metal tab; must be mounted to heatsink with electrically insulating thermal interface; carries full load current and blocking voltage.
Pin 3 (Source)	Reference node	Serves as return path for load current and gate drive reference; critical for stable gate control in high-dv/dt environments.

Key Features

Feature	Design Value
Integrated fast body diode	Q_rr = 0.86 µC, t_rr = 156 ns - Eliminates need for discrete anti-parallel diode in resonant half/full-bridge topologies.
AEC-Q101 qualified	Validated for automotive-grade reliability including 100% avalanche testing - meets PPAP requirements for OBC and traction inverters.
Low R_DS(on) × Q_g FOM	5.1 Ω·nC - Balances conduction and switching loss for optimal efficiency across light-to-full load in 400–475 V battery systems.
High dv/dt ruggedness	120 V/ns (MOSFET), 70 V/ns (body diode) - Prevents false turn-on during fast voltage transitions in high-power ZVS designs.
Thermal robustness	R_thJC = 0.73 °C/W - Supports compact heatsink design in space-constrained on-board charger modules.

Applications

On-Board Charger (OBC) – AC/DC Stage

On-Board Charger (OBC) – DC/DC Stage

Use Scenario: 6.6 kW bi-directional OBC converting grid AC to 400 V battery DC using totem-pole PFC and dual-active-bridge (DAB) isolation.

IC Role / Device Role / Timing Role: High-side switch in interleaved totem-pole PFC; operates in continuous conduction mode with 100–200 kHz switching.

Use Value: Low Q_rr and fast di_F/dt prevent shoot-through and reduce dead-time loss, improving PFC efficiency by ≥0.5% at 20% load.

Use Scenario: Primary-side switch in DAB-based isolated DC/DC stage stepping 400 V battery down to 12 V/48 V auxiliary supply.

IC Role / Device Role / Timing Role: Resonant switch in ZVS phase-shift full-bridge topology; gated with 180° phase shift and variable frequency control.

Use Value: Ultra-low E_oss (8.8 µJ) and low C_oss enable reliable ZVS down to 10% load, reducing switching loss by 35% vs. prior-gen CoolMOS™.

Bidirectional DC-DC Converter – EV Power Distribution

Traction Inverter Auxiliary Supply

Use Scenario: 3.3 kW bidirectional DC-DC converter linking 400 V main battery and 800 V fast-charging buffer bank in modular EV architectures.

IC Role / Device Role / Timing Role: Synchronous rectifier and active switch in dual-phase LLC resonant converter; handles reverse current during regenerative transfer.

Use Value: Symmetrical di_F/dt (1300 A/µs) and low reverse recovery charge ensure balanced commutation in both directions, maintaining <±0.3% voltage regulation.

Use Scenario: Isolated auxiliary power supply for gate drivers and MCU in 800 V traction inverter, powered from main DC-link.

IC Role / Device Role / Timing Role: Primary-side switch in flyback or active-clamp forward converter operating at 250 kHz with tight duty-cycle control.

Use Value: 100% avalanche tested and AEC-Q101 qualified ensures fail-safe operation during inverter fault events (e.g., shoot-through, overvoltage).

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage resonant switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R080CFD7XKSA1	R_DS(on) = 80 mΩ (max), Q_g = 62 nC, E_oss = 9.2 µJ - slightly higher conduction loss but lower gate charge.	Preferred in cost-sensitive 3.3 kW OBCs where peak efficiency >97% is not required and gate drive power budget is constrained.	Select when prioritizing gate driver simplicity over minimal conduction loss at full load.
IPP65R095CFD7XKSA1	R_DS(on) = 95 mΩ (max), Q_g = 54 nC, E_oss = 9.8 µJ - higher R_DS(on) but lowest gate charge in CFD7A family.	Suitable for 1.1 kW auxiliary supplies and low-power DC-DC where thermal margin allows higher on-resistance.	Choose for space-constrained auxiliary supplies needing minimal gate drive power and relaxed thermal design.

Compared with IPW65R080CFD7XKSA1 and IPP65R095CFD7XKSA1, IPWS65R075CFD7AXKSA1 delivers the lowest R_DS(on) in the CFD7A series - making it optimal for high-current, high-efficiency OBC primary-side switches where conduction loss dominates at full load.

Availability

IPWS65R075CFD7AXKSA1 is available at Aetrix Electronics and suitable for on-board chargers, bidirectional DC-DC converters, and traction inverter auxiliary supplies requiring stable component supply, AEC-Q101 compliance, and production-ready automotive qualification.

Supply support for IPWS65R075CFD7AXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

This device belongs to the CoolMOS™ CFD7A product line - engineered specifically for high-efficiency, high-reliability resonant and soft-switching topologies in automotive on-board chargers and 400–475 V battery systems.

FAQ

Is IPWS65R075CFD7AXKSA1 suitable for linear-mode operation?

No. Infineon explicitly advises against linear-mode operation for this device. The datasheet states "We do not recommend using the CoolMOS mentioned in this datasheet to operate in 'linear mode'." Thermal runaway risk and undefined safe operating area in linear region make it unsuitable for analog amplification or constant-current regulation applications.

What is the maximum recommended gate resistor value for ZVS operation in an LLC converter?

For reliable ZVS at 200–300 kHz, a gate resistor of ≤5.3 Ω is recommended based on the datasheet's switching time test condition (RG = 5.3 Ω). Higher values increase turn-on delay and reduce di_F/dt margin; values above 10 Ω risk incomplete turn-on and increased switching loss in resonant topologies.

Does the internal body diode require external snubbing in a phase-shift full-bridge?

No external snubber is required due to the device's integrated fast body diode with 1300 A/µs di_F/dt rating and 156 ns t_rr. However, PCB layout must minimize source inductance (<10 nH) and gate loop inductance to prevent oscillation during diode commutation - per Infineon's AN2019-04 layout guidelines.

How does the 100% avalanche test impact system-level reliability in OBC applications?

The 100% unclamped inductive switching (UIS) test to 164 mJ ensures each unit can withstand worst-case short-circuit energy without failure. In OBCs, this translates to guaranteed survival during AC-line surges, PFC capacitor faults, or DAB transformer saturation - eliminating field returns due to single-event avalanche overstress.

IPWS65R075CFD7AXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CFD7A

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 32A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 75mOhm @ 16.4A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 820µA

Gate Charge (Qg) (Max) @ Vgs:: 68 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3288 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 171W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-41

IPWS65R075CFD7AXKSA1 FAQ

1.How can I place an order for IPWS65R075CFD7AXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPWS65R075CFD7AXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPWS65R075CFD7AXKSA1 reliable?

The price and inventory of IPWS65R075CFD7AXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPWS65R075CFD7AXKSA1 is usually 5 days.

3.What payment methods are accepted for IPWS65R075CFD7AXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPWS65R075CFD7AXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPWS65R075CFD7AXKSA1?

IPWS65R075CFD7AXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPWS65R075CFD7AXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPWS65R075CFD7AXKSA1?

For technical support, including IPWS65R075CFD7AXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPWS65R075CFD7AXKSA1 requirements.

6.How does Aetrix verify that IPWS65R075CFD7AXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPWS65R075CFD7AXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPWS65R075CFD7AXKSA1 meets industry standards.

7.What is the process for return or replacement of IPWS65R075CFD7AXKSA1?

All IPWS65R075CFD7AXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPWS65R075CFD7AXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPWS65R075CFD7AXKSA1 part is unused and in its original packaging.

Return procedure for IPWS65R075CFD7AXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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