Infineon Technologies IPZ65R095C7XKSA1

Overview

IPZ65R095C7XKSA1 from Infineon Technologies is a 650 V, 95 mΩ superjunction MOSFET in the CoolMOS™ C7 family, designed for high-frequency hard-switching and PFC stages. It delivers 45 nC total gate charge, 5.5 µJ output switching energy at 400 V, and 100 A pulsed drain current, enabling high-efficiency power conversion in server and telecom SMPS.

For engineers reviewing the IPZ65R095C7XKSA1 datasheet, IPZ65R095C7XKSA1 pinout, IPZ65R095C7XKSA1 application, or IPZ65R095C7XKSA1 equivalent, key selection criteria include R_DS(on) vs. temperature stability, dv/dt ruggedness (100 V/ns), body diode commutation speed (60 A/µs), and driver-source pin implementation for gate control integrity.

Technical Context

This CoolMOS™ C7 device employs a superjunction architecture optimized for reduced R_DS(on) × Q_g and R_DS(on) × E_oss figures of merit. Its 4-pin TO-247 package integrates a dedicated source sense pin to decouple power and signal return paths, minimizing gate loop inductance and improving switching controllability.

The MOSFET supports industrial-grade operation up to 150 °C junction temperature and exhibits 118 mJ single-pulse avalanche energy. Its reverse recovery characteristics-Q_rr = 9 µC, t_rr = 800 ns at 24 A-are specified under controlled di/dt (60 A/µs) and 400 V reverse bias, critical for ZVS/ZCS design validation.

Key Specifications

Pinout & Package

IPZ65R095C7XKSA1 uses the PG-TO247-4 package: a 4-pin through-hole variant with isolated source sense terminal. The package features copper leadframe, Pb-free plating, and halogen-free mold compound, qualified per JEDEC J-STD-020 and JESD22 for industrial reliability.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Compared with STW65N60DM6 and IXFH60N60X3, IPZ65R095C7XKSA1 trades slightly higher R_DS(on) for superior gate drive control, lower E_oss, and proven dv/dt immunity-making it optimal for high-frequency, high-reliability PFC and telecom rectifiers where layout constraints and thermal management are critical.

Availability

IPZ65R095C7XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and UPS inverters requiring stable component supply, long-term industrial qualification, and consistent parametric performance across manufacturing lots.

Supply support for IPZ65R095C7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global R&D and wafer fabrication infrastructure.

The CoolMOS™ C7 series targets high-efficiency AC-DC and DC-DC conversion in datacenter, telecom, and renewable energy systems, emphasizing reduced switching loss, enhanced ruggedness, and simplified gate drive design.

FAQ

What is the purpose of the fourth pin (Sense Source) on IPZ65R095C7XKSA1?

The fourth pin is a Kelvin-connected sense source terminal, electrically isolated from the main source pin. It provides a low-noise reference for gate drive circuitry, eliminating voltage drop across source bond wires and PCB traces that would otherwise distort gate-to-source voltage timing. This ensures accurate turn-on/turn-off control and suppresses parasitic oscillation during fast switching.

Can IPZ65R095C7XKSA1 replace older CoolMOS™ C3 or C6 devices in existing designs?

Yes, with layout verification. IPZ65R095C7XKSA1 offers improved R_DS(on) × Q_g and E_oss versus C3/C6, but its 4-pin configuration requires routing separation between main and sense source paths. Gate drive strength may be reduced due to lower Q_g, so driver slew rate and dead-time settings should be revalidated, especially in half-bridge configurations.

Is the IPZ65R095C7XKSA1 suitable for zero-voltage switching (ZVS) topologies?

Yes-it is widely used in LLC resonant and active-clamp forward converters. Its low E_oss (5.5 µJ at 400 V) minimizes turn-on loss during ZVS transitions, and its 60 A/µs body diode dI/dt supports clean commutation. However, ZVS operation requires matching resonant tank design and gate drive timing to ensure full voltage fall before current rise.

What is the maximum recommended gate resistor value for reliable operation?

Infineon recommends R_G ≤ 10 Ω for hard-switched applications to maintain <12 ns turn-on delay and <60 ns turn-off delay. For ZVS topologies, R_G can be increased to 22 Ω to moderate dV/dt and reduce EMI, provided gate drive voltage remains ≥12 V and layout inductance stays below 5 nH to avoid oscillation.