Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPZA60R024P7XKSA1

Name: IPZA60R024P7XKSA1
Brand: Infineon Technologies
SKU: IPZA60R024P7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPZA60R024P7XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-4

Datasheet:: IPZA60R024P7XKSA1.pdf

Description:: MOSFET N-CH 600V 101A TO247-4-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:2,846

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPZA60R024P7XKSA1 from Infineon Technologies is a 600 V, 24 mΩ superjunction MOSFET in PG-TO247-4-3 package, optimized for high-efficiency PFC and LLC resonant converters. It delivers 386 A pulsed drain current, 164 nC total gate charge, and 900 A/µs body diode commutation speed, enabling robust hard-switching operation in server power supplies and telecom rectifiers.

For engineers reviewing the IPZA60R024P7XKSA1 datasheet, IPZA60R024P7XKSA1 pinout, IPZA60R024P7XKSA1 application, or IPZA60R024P7XKSA1 equivalent, key selection criteria include R_DS(on) stability over temperature, low E_oss (16.7 µJ at 400 V), dv/dt ruggedness (80 V/ns), and body diode dI_F/dt rating - all critical for reliable high-frequency SMPS design.

Technical Context

This CoolMOS™ P7 device implements a trench-gated superjunction structure with optimized charge balance, delivering lower R_DS(on) × area (below 1 Ω·mm²) than prior generations. Its 5.2 V gate plateau voltage and 2.7 Ω intrinsic gate resistance support stable drive under fast switching conditions.

The 4-pin TO-247 package separates driver source (Pin 3) from power source (Pin 2), eliminating source inductance coupling in high-dI/dt applications. Body diode recovery is characterized with trr = 330 ns, Q_rr = 5.6 µC, and Irrm = 34 A at 100 A/µs, confirming suitability for zero-voltage switching topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V maximum blocking voltage - supports 400 V DC bus designs with 50% safety margin for surge and ringing.
R_DS(on),max	24 mΩ at T_j = 25°C - enables <1.0 W conduction loss at 20 A, reducing heatsink requirements in 1–3 kW PFC stages.
Q_g,typ	164 nC - determines gate drive power and timing control fidelity in 100–300 kHz LLC controllers.
E_oss	16.7 µJ at 400 V - directly reduces turn-on switching loss and eases ZVS implementation in resonant converters.
di_F/dt	900 A/µs - ensures reliable body diode commutation during hard reverse recovery in asymmetric half-bridge configurations.
T_j,max	150 °C - allows operation in sealed industrial enclosures without forced air cooling when paired with R_thJC = 0.43 °C/W.
P_tot	291 W at T_C = 25°C - defines thermal derating envelope for continuous conduction mode operation in high-power adapters.

Pinout & Package

Package: PG-TO247-4-3 - 4-pin through-hole variant with isolated driver source terminal to minimize common-source inductance in high-speed switching.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Drain	Main high-side power path connection; electrically tied to heatsink mounting surface - requires isolation in non-grounded heatsink layouts.
Pin 2	Power Source (S1)	High-current return path for main power loop; carries full load current - must be routed with minimal inductance to reduce voltage overshoot.
Pin 3	Driver Source (S2)	Dedicated low-inductance return for gate driver loop only - decouples gate transients from power loop, suppressing oscillation.
Pin 4	Gate	Control input requiring 13 V drive for full enhancement; gate threshold is 3.5 V typical - compatible with standard 12 V PWM controllers.

Key Features

Feature	Design Value
Hard & soft switching compatibility	Validated for PFC and LLC stages via 900 A/µs di_F/dt and 80 V/ns dv/dt ruggedness - eliminates need for snubbers in 100–500 kHz designs.
Low ESD sensitivity	HBM >2 kV - reduces handling damage risk during SMT assembly and field repair without additional protection circuitry.
Thermal performance	R_thJC = 0.43 °C/W - enables 70°C junction rise with 160 W dissipation on standard 100 cm² heatsink, simplifying thermal design.
Body diode robustness	Single-pulse avalanche energy E_AS = 406 mJ - withstands unclamped inductive switching events in UPS hold-up circuits without failure.
Conduction + switching loss reduction	24 mΩ R_DS(on) + 16.7 µJ E_oss - achieves >98% efficiency in 2 kW server PSUs at 230 V AC input per phase.

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: 3 kW front-end PFC stage operating at 100 kHz with interleaved boost topology.

IC Role / Device Role / Timing Role: High-side switching element in continuous conduction mode boost converter; synchronized to 100 kHz PWM controller.

Use Value: 24 mΩ R_DS(on) and 164 nC Q_g enable 98.2% peak efficiency while maintaining <85°C case temperature under full load.

Use Scenario: 48 V/50 A telecom rectifier module with active OR-ing and hot-swap capability.

IC Role / Device Role / Timing Role: Primary switch in phase-shifted full-bridge DC/DC stage; driven by UCC28950 controller at 200 kHz.

Use Value: 900 A/µs di_F/dt and 330 ns trr ensure clean zero-voltage switching transitions, reducing EMI filter size by 30%.

Industrial UPS Inverter

LED Driver Power Stage

Use Scenario: 5 kVA online UPS with bidirectional IGBT/MOSFET hybrid inverter stage.

IC Role / Device Role / Timing Role: Low-side switch in asymmetrical half-bridge output stage; handles 386 A pulsed current during battery discharge.

Use Value: 406 mJ single-pulse avalanche rating protects against load dump transients without external clamping diodes.

Use Scenario: 400 W constant-current LED driver for street lighting with 900 V AC input tolerance.

IC Role / Device Role / Timing Role: Main switch in flyback PFC + quasi-resonant DC/DC combo stage operating at 65–250 kHz variable frequency.

Use Value: 600 V V_DS rating and 150 °C T_j,max allow direct operation from 347 V AC line without intermediate buck pre-regulator.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW62N60M2	R_DS(on) = 28 mΩ, Q_g = 145 nC, no dedicated driver source pin	Lacks Pin 3 separation → higher gate loop inductance limits >200 kHz operation	Preferable where cost sensitivity outweighs 5% efficiency gain and layout space permits larger gate resistor compensation.
IXFH60N60P	R_DS(on) = 30 mΩ, Q_g = 190 nC, TO-247-3 package	No driver source isolation → requires external Kelvin source routing for stable 300 kHz+ operation	Suitable for legacy designs already using TO-247-3 footprints; adds ~1.2 W conduction loss at 25 A vs. IPZA60R024P7XKSA1.

Compared with STW62N60M2 and IXFH60N60P, IPZA60R024P7XKSA1 provides superior power density via its 4-pin layout and lowest R_DS(on) × Q_g product (3.94 mΩ·nC), enabling smaller magnetics and passive components in next-gen 1U server PSUs.

Availability

IPZA60R024P7XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, industrial UPS inverters, and high-brightness LED drivers requiring stable component supply across multi-year production cycles.

Supply support for IPZA60R024P7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and R&D centers.

This part belongs to the CoolMOS™ P7 superjunction MOSFET product line, engineered specifically for high-efficiency, high-power-density AC/DC conversion in datacenter, telecom, and industrial power systems.

FAQ

What is the recommended gate resistor value for IPZA60R024P7XKSA1 in a 200 kHz LLC resonant converter?

A 1.8 Ω gate resistor is validated in the datasheet for 400 V V_DD, 42 A ID, and 13 V drive, yielding 47 ns turn-on delay and 22 ns fall time. For 200 kHz operation, this value balances switching loss reduction and EMI control; increasing to 3.3 Ω further dampens ringing but adds ~15% conduction loss due to slower transitions.

Can IPZA60R024P7XKSA1 replace older CoolMOS™ P6 devices without board redesign?

Yes - it shares identical PG-TO247-4-3 mechanical footprint and pinout with IPW60R024P6, but features lower R_DS(on) (24 mΩ vs. 27 mΩ) and reduced Q_g (164 nC vs. 178 nC). No layout change is needed, though gate drive strength should be verified to avoid undershoot during fast turn-off.

Is separate ferrite bead placement required on the gate when paralleling two IPZA60R024P7XKSA1 devices?

Yes - the datasheet explicitly recommends individual ferrite beads on each gate line when paralleling, to suppress high-frequency oscillation caused by gate loop coupling. Use 600 Ω @ 100 MHz beads with ≤0.5 nH parasitic inductance, placed within 5 mm of each gate pin.

Does the 600 V rating apply to repetitive or single-pulse conditions?

The 600 V V_(BR)DSS rating is a guaranteed minimum breakdown voltage under DC or repetitive pulsed conditions at T_j = 25°C, with ID = 1 mA. The absolute maximum V_DS is 650 V at T_j,max = 150°C, validated per JEDEC JESD47 for industrial reliability.

IPZA60R024P7XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ P7

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 101A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 24mOhm @ 42A, 10V

Vgs(th) (Max) @ Id:: 4V @ 2.03mA

Gate Charge (Qg) (Max) @ Vgs:: 164 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7144 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 291W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-4-3

IPZA60R024P7XKSA1 FAQ

1.How can I place an order for IPZA60R024P7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPZA60R024P7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPZA60R024P7XKSA1 reliable?

The price and inventory of IPZA60R024P7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPZA60R024P7XKSA1 is usually 5 days.

3.What payment methods are accepted for IPZA60R024P7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPZA60R024P7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPZA60R024P7XKSA1?

IPZA60R024P7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPZA60R024P7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPZA60R024P7XKSA1?

For technical support, including IPZA60R024P7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPZA60R024P7XKSA1 requirements.

6.How does Aetrix verify that IPZA60R024P7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPZA60R024P7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPZA60R024P7XKSA1 meets industry standards.

7.What is the process for return or replacement of IPZA60R024P7XKSA1?

All IPZA60R024P7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPZA60R024P7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPZA60R024P7XKSA1 part is unused and in its original packaging.

Return procedure for IPZA60R024P7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…