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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPZA60R180P7XKSA1

Name: IPZA60R180P7XKSA1
Brand: Infineon Technologies
SKU: IPZA60R180P7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPZA60R180P7XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-4

Datasheet:: IPZA60R180P7XKSA1.pdf

Description:: MOSFET N-CH 600V 18A TO247-4

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Product details

Overview

IPZA60R180P7XKSA1 from Infineon Technologies is a 600V, 180 mΩ superjunction MOSFET in PG-TO247-4-3 package with integrated Kelvin source (Driver Source Pin 3), optimized for high-efficiency PFC and LLC resonant converters. It delivers 53 A pulsed drain current, 25 nC total gate charge, and 2.9 µJ output switching energy at 400 V, enabling compact, low-temperature operation in server power supplies and telecom rectifiers.

For engineers reviewing the IPZA60R180P7XKSA1 datasheet, IPZA60R180P7XKSA1 pinout, IPZA60R180P7XKSA1 application, or IPZA60R180P7XKSA1 equivalent, key selection criteria include its 900 A/µs body diode commutation ruggedness, 1.74 °C/W junction-to-case thermal resistance, 650 V maximum drain-source voltage rating, and 4-pin Kelvin-source layout for minimized gate loop inductance and reduced switching losses.

Technical Context

This CoolMOS™ P7 device implements a superjunction architecture with trench-gate cell design, delivering low R_DS(on) × area (<1 Ω·mm²) and enhanced dv/dt ruggedness (80 V/ns). Its Kelvin source configuration separates power and driver return paths to suppress gate oscillation during hard commutation.

The MOSFET features a 5.2 V gate plateau voltage and tightly controlled 3.5 V typical threshold voltage, enabling stable turn-on across industrial temperature range (−55 °C to 150 °C). Its 19 pF typical output capacitance (C_oss) and 36 pF energy-related C_o(er) support predictable soft-switching behavior in resonant topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS,max	650 V - Withstands transient overvoltage up to 650 V without avalanche breakdown, supporting 400 V DC-link designs with 25% margin.
R_DS(on),max	180 mΩ @ T_j = 150 °C - Enables <1.8 W conduction loss at 10 A continuous, reducing heatsink requirements.
Q_g,typ	25 nC - Low gate drive energy allows use of standard 1–2 A gate drivers without excessive power dissipation.
E_oss@400 V	2.9 µJ - Minimizes turn-off loss in high-frequency PFC stages operating >100 kHz.
di_F/dt	900 A/µs - Supports robust body diode commutation in hard-switched LLC half-bridge configurations without snubbers.
R_thJC	1.74 °C/W - Enables direct mounting to heatsinks for thermal management in 300–500 W server PSU primary switches.
V_GS(th)	3.5 V typ - Ensures reliable turn-on with standard 5 V or 12 V logic-level gate drivers, avoiding marginal biasing.

Pinout & Package

Package: PG-TO247-4-3 - 4-pin through-hole package with isolated Kelvin source terminal for precise gate control and reduced Miller effect.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Drain	Main high-voltage power path; electrically connected to heatsink tab; requires creepage clearance ≥4 mm.
Pin 2	Power Source (Source)	High-current return path for load current; carries full ID,pulse (53 A); connects to main PCB ground plane.
Pin 3	Driver Source (Kelvin Source)	Dedicated low-inductance gate return; decouples gate loop from power loop to suppress ringing and improve EMI.
Pin 4	Gate	Control input; driven by isolated gate driver IC; requires 10 Ω series resistor to dampen resonance with 11 Ω internal R_G.

Key Features

Feature	Design Value
Hard/soft switching compatibility	Validated for PFC and LLC topologies via 900 A/µs diF/dt and 80 V/ns dv/dt ruggedness - eliminates need for external diode or snubber in most designs.
ESD robustness	HBM >2 kV - Reduces assembly-line failures and field returns in automated SMT and manual handling environments.
Low R_DS(on) × area	<1 Ω·mm² - Enables smaller die size without sacrificing on-resistance, improving power density vs. prior P6 generation.
Body diode recovery	175 ns t_rr, 1.3 µC Q_rr - Limits reverse recovery loss and associated voltage spikes in bridge-leg commutation.
JEDEC industrial qualification	Qualified per JESD47 - ensures reliability under 150 °C junction temperature, 1000-cycle temperature cycling, and 1000 h HTOL stress.

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 80 PLUS Titanium 3 kW front-end PFC + LLC stage.

IC Role / Device Role / Timing Role: High-voltage switching element controlling AC-DC conversion timing and energy transfer efficiency.

Use Value: 2.9 µJ E_oss and 25 nC Q_g reduce switching loss by ~18% versus P6 equivalents, enabling 98.5% peak efficiency at 50% load.

Use Scenario: Active clamp forward or phase-shifted full-bridge switch in −48 V telecom rectifier.

IC Role / Device Role / Timing Role: Main power transistor managing high-duty-cycle, high-di/dt switching transitions.

Use Value: 900 A/µs diF/dt rating prevents body diode failure during zero-voltage switching transitions, eliminating forced air cooling.

LCD TV Backlight Inverter

Industrial UPS Inverter

Use Scenario: Resonant half-bridge switch driving CCFL or LED backlight in 55″ LCD TV power board.

IC Role / Device Role / Timing Role: Fast-switching HV node in high-frequency (>150 kHz) resonant tank circuit.

Use Value: 19 pF C_oss and 36 pF C_o(er) ensure predictable ZVS onset and minimal dead-time sensitivity.

Use Scenario: Output stage switch in 10 kVA double-conversion UPS inverter module.

IC Role / Device Role / Timing Role: Robust power switch handling repetitive 600 V bus transients and motor regeneration currents.

Use Value: 56 mJ single-pulse avalanche energy rating withstands line surges and inductive kickback without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R180P7	Same die, TO-220FP package (3-pin, no Kelvin source); R_DS(on) identical but higher gate loop inductance.	Limited to lower-frequency PFC (<70 kHz) due to increased ringing; unsuitable for fast LLC with tight dead-time control.	Select when cost-sensitive, space-constrained designs accept 5–8% higher E_sw and require standard through-hole footprint.
IPW60R180P7	Same die, TO-247-3 package (no Kelvin source); identical R_DS(on) and Q_g, but lacks dedicated driver source pin.	Requires external gate ferrite bead or split gate resistor to suppress oscillation in >200 kHz resonant converters.	Select when legacy board reuse mandates 3-pin TO-247 layout and design team has proven mitigation for gate ringing.

Compared with IPP60R180P7 and IPW60R180P7, IPZA60R180P7XKSA1 provides measurable reduction in gate-drive-induced EMI and improved ZVS consistency in high-frequency LLC, directly attributable to its 4-pin Kelvin-source structure and lower effective gate loop inductance.

Availability

IPZA60R180P7XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial UPS systems requiring stable component supply, long-term lifecycle assurance, and JEDEC-qualified industrial-grade reliability.

Supply support for IPZA60R180P7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The CoolMOS™ P7 product line targets high-efficiency AC-DC conversion in datacenter, telecom, and industrial power systems, emphasizing reduced conduction and switching losses while maintaining ease of use in complex topologies.

FAQ

What is the purpose of the Driver Source (Pin 3) in IPZA60R180P7XKSA1?

Pin 3 is a dedicated Kelvin source terminal that provides a low-inductance return path exclusively for the gate driver circuit. It isolates gate-loop current from high di/dt power-source current, reducing gate voltage overshoot, suppressing parasitic oscillation, and improving switching reproducibility-especially critical in >200 kHz LLC converters.

Can IPZA60R180P7XKSA1 replace older CoolMOS™ P6 devices in existing designs?

Yes, it is a direct drop-in replacement for IPZA60R180P6 in PG-TO247-4-3 package, offering identical pinout, lower R_DS(on) (180 mΩ max vs. 195 mΩ), 15% lower Q_g, and improved body diode ruggedness. No layout changes are required, but gate resistor tuning may further optimize switching performance.

Is parallel operation supported, and what precautions apply?

Parallel operation is supported but requires individual gate resistors and ferrite beads on each gate line to balance dynamic current sharing. The datasheet recommends separate totem-pole drivers per device or gate signal isolation to prevent oscillatory coupling between paralleled units.

What thermal interface material is recommended for mounting IPZA60R180P7XKSA1?

A thermally conductive, electrically insulating pad (e.g., Bergquist Sil-Pad 1000S) or silicone-based thermal grease (e.g., Dow Corning TC-5022) is recommended. Mounting torque must not exceed 60 Ncm to avoid die cracking, and flatness tolerance of heatsink surface shall be ≤50 µm over the mounting area.

IPZA60R180P7XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ P7

Package/Case:: TO-247-4

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 180mOhm @ 5.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 280µA

Gate Charge (Qg) (Max) @ Vgs:: 25 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1081 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 72W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-4

IPZA60R180P7XKSA1 FAQ

1.How can I place an order for IPZA60R180P7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPZA60R180P7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPZA60R180P7XKSA1 reliable?

The price and inventory of IPZA60R180P7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPZA60R180P7XKSA1 is usually 5 days.

3.What payment methods are accepted for IPZA60R180P7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPZA60R180P7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPZA60R180P7XKSA1?

IPZA60R180P7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPZA60R180P7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPZA60R180P7XKSA1?

For technical support, including IPZA60R180P7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPZA60R180P7XKSA1 requirements.

6.How does Aetrix verify that IPZA60R180P7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPZA60R180P7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPZA60R180P7XKSA1 meets industry standards.

7.What is the process for return or replacement of IPZA60R180P7XKSA1?

All IPZA60R180P7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPZA60R180P7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPZA60R180P7XKSA1 part is unused and in its original packaging.

Return procedure for IPZA60R180P7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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