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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IQD005N04NM6CGSCATMA1

Name: IQD005N04NM6CGSCATMA1
Brand: Infineon Technologies
SKU: IQD005N04NM6CGSCATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IQD005N04NM6CGSCATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 9-PowerWDFN

Datasheet:: IQD005N04NM6CGSCATMA1.pdf

Description:: OPTIMOS POWER MOSFETS 25 V - 150

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Product details

Overview

IQD005N04NM6CGSCATMA1 from Infineon is an N-channel enhancement-mode MOSFET in the OptiMOS™ 6 family, rated for 40 V drain-source voltage, 0.49 mΩ maximum R_DS(on) at V_GS = 10 V, 597 A continuous drain current (T_C = 25 °C), and housed in a PG-WHTFN-9 package with double-side cooling capability. It serves as a high-current synchronous rectifier or main switch in high-efficiency DC-DC converters for server power supplies.

For engineers reviewing the IQD005N04NM6CGSCATMA1 datasheet, IQD005N04NM6CGSCATMA1 pinout, IQD005N04NM6CGSCATMA1 application, or IQD005N04NM6CGSCATMA1 equivalent, key selection criteria include its ultra-low on-resistance, 100% avalanche-tested ruggedness, top- and bottom-side thermal resistance (0.56 °C/W and 0.45 °C/W), and gate charge profile optimized for high-frequency synchronous buck operation.

Technical Context

This device implements a trench-based silicon MOSFET architecture with optimized cell pitch and deep-trench gate structure to minimize both conduction and switching losses. Its gate threshold voltage (1.8–2.8 V) and plateau voltage (~3.3 V) support robust gate drive compatibility with standard 5 V and 3.3 V controllers.

The integrated body diode exhibits low forward voltage (0.78–1.0 V at 50 A, 25 °C) and fast reverse recovery (t_rr = 29–116 ns depending on di/dt), enabling efficient hard-switched and synchronous rectification modes without external Schottky assistance.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 12 V and 48 V input bus architectures
R_DS(on), max	0.49 mΩ at V_GS = 10 V - Enables <1.5 W conduction loss at 50 A, critical for >98% efficiency in 48 V→12 V conversion
I_D, cont	597 A at T_C = 25 °C - Supports high-current single-phase or paralleled multi-phase VRMs
Q_g, total	130 nC - Matches typical 3–5 MHz PWM controllers with moderate gate driver power demand
R_thJC, bottom	0.45 °C/W - Allows direct thermal interface to heatsink or cold plate via exposed drain tab
E_AS	1115 mJ - Withstands single-pulse inductive energy in hard-switched motor drives or hot-swap circuits
Q_oss	2900–3800 pF - Low output capacitance reduces turn-off loss and improves light-load efficiency

Pinout & Package

Package: PG-WHTFN-9 - Thermally enhanced wettable flank QFN with exposed drain pad (pins 5–8 and tab), source-connected pins (1–4), and single gate pin (9). Designed for automated optical solder inspection and double-side cooling.

Pin/Terminal	Circuit Role	Design Meaning
1–4	Source	Low-inductance parallel source connection; ties directly to PCB ground plane for minimal loop inductance
5–8 + Tab	Drain	Exposed copper drain pad enables dual thermal paths-top-side heatsinking and bottom-side PCB copper area
9	Gate	Single gate input with 0.68 Ω internal gate resistance-reduces ringing and simplifies external gate resistor selection

Key Features

Feature	Design Value
Double-side cooling design	Enables thermal management via both top heatsink and bottom PCB copper, reducing junction-to-ambient ΔT by up to 40% vs. standard QFN
100% avalanche tested	Guarantees ruggedness under unclamped inductive switching-no derating required for flyback or boost converter primary switches
Optimized for synchronous FET use	Q_g(sync) = 122 nC and low Q_gd/Q_gs ratio improve dead-time control and reduce shoot-through risk in buck converters
Pb-free & halogen-free	Complies with RoHS and IEC61249-2-21-qualified for industrial and automotive under-hood applications

Applications

Server VRM Phase Block

48 V–12 V Intermediate Bus Converter

Use Scenario: High-density, multi-phase buck converter supplying CPU/GPU core voltage in AI accelerators.

IC Role / Device Role / Timing Role: Synchronous rectifier (low-side switch) operating at 500 kHz–1 MHz with tight duty cycle control.

Use Value: 0.49 mΩ R_DS(on) cuts conduction loss by >35% versus prior-gen 60 V MOSFETs, enabling 50 A+ per phase without forced air.

Use Scenario: Isolated or non-isolated point-of-load converter stepping down 48 V telecom/datacenter bus to 12 V system rail.

IC Role / Device Role / Timing Role: Primary-side high-current switch in hard-switched or ZVS-enabled topology.

Use Value: 1115 mJ E_AS and 2388 A pulsed rating allow reliable operation during load dump or short-circuit events without snubbers.

Industrial Motor Drive Inverter

High-Power USB PD 3.1 EPR GaN Companion

Use Scenario: 3-phase inverter stage for servo drives handling 3 kW–5 kW loads.

IC Role / Device Role / Timing Role: Low-side switching element in IGBT or SiC hybrid inverter, commutating at ≤20 kHz.

Use Value: 0.56 °C/W top-side R_thJC permits direct heatsink mounting-eliminating thermal interface material and reducing assembly cost.

Use Scenario: Secondary-side synchronous rectifier paired with 65 W–240 W GaN half-bridge controllers.

IC Role / Device Role / Timing Role: Output rectifier in active-clamp forward or LLC resonant converter.

Use Value: 142 nC Q_oss and 58 ns t_rr (low di/dt) minimize reverse recovery loss and EMI when co-packaged with GaN switches.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 40 V MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXFH50N40X3	TO-247 package, higher R_DS(on) (0.75 mΩ), no double-side cooling	Requires external heatsink; unsuitable for ultra-thin VRM modules	Preferred where legacy through-hole assembly or higher pulse current margin is needed
IRFB4115PBF	TO-220AB, R_DS(on) = 1.5 mΩ, lower I_D (115 A), no avalanche rating	Limited to <200 W applications; not qualified for industrial temperature cycling	Cost-sensitive designs with relaxed thermal and reliability requirements

Compared with IXFH50N40X3 and IRFB4115PBF, IQD005N04NM6CGSCATMA1 delivers 35–65% lower conduction loss, enables 2× power density via surface-mount double-side cooling, and supports mission-critical industrial operation with JEDEC-qualified lifetime validation.

Availability

IQD005N04NM6CGSCATMA1 is available at Aetrix Electronics and suitable for server VRMs, 48 V intermediate bus converters, industrial motor inverters, and high-power USB PD EPR systems requiring stable component supply across multi-year production cycles.

Supply support for IQD005N04NM6CGSCATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and security ICs, with global manufacturing and qualification infrastructure.

This part belongs to the OptiMOS™ 6 product line-engineered specifically for high-efficiency, high-current DC-DC conversion in datacenter, industrial, and e-mobility applications where thermal density and avalanche ruggedness are critical.

FAQ

What is the maximum recommended gate drive voltage for IQD005N04NM6CGSCATMA1?

The absolute maximum gate-source voltage is ±20 V, but the device is characterized and optimized for 10 V drive. Operating at 6 V yields R_DS(on) = 0.54 mΩ-still suitable for many high-efficiency designs-while 4.5 V is the minimum guaranteed threshold for turn-on. Exceeding 12 V provides diminishing returns and increases gate oxide stress risk.

Does IQD005N04NM6CGSCATMA1 require a gate resistor, and if so, what value is recommended?

Yes-a series gate resistor is recommended to dampen ringing and control dV/dt. Based on its 0.68 Ω intrinsic gate resistance and 130 nC total gate charge, a 2.2–4.7 Ω external resistor balances switching speed (t_r/t_f ≈ 6–9 ns) and EMI suppression. Values below 1.5 Ω increase risk of gate oscillation in high-di/dt layouts.

Can IQD005N04NM6CGSCATMA1 be used in parallel configurations?

Yes-its positive temperature coefficient for R_DS(on) (normalized to 25 °C: 1.2× at 100 °C, 1.6× at 175 °C) ensures inherent current sharing. Layout best practices include matched gate trace lengths, Kelvin source connections, and symmetrical thermal coupling. Derating to 500 A per device is advised for long-term reliability in paralleled 3+ unit arrays.

Is the internal body diode suitable for freewheeling in hard-switched topologies?

Yes-the diode is fully rated for 294 A continuous forward current and 2388 A pulsed current, with t_rr = 29–116 ns and Q_rr = 221–442 nC. Its soft recovery behavior minimizes voltage overshoot, making it viable for non-synchronous flyback or forward converters without external diode replacement-though synchronous operation remains preferred for peak efficiency.

IQD005N04NM6CGSCATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 6

Package/Case:: 9-PowerWDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 57A (Ta), 597A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 0.49mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2.8V @ 1.449mA

Gate Charge (Qg) (Max) @ Vgs:: 163 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 12000 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 333W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-WHTFN-9-U02

IQD005N04NM6CGSCATMA1 FAQ

1.How can I place an order for IQD005N04NM6CGSCATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IQD005N04NM6CGSCATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IQD005N04NM6CGSCATMA1 reliable?

The price and inventory of IQD005N04NM6CGSCATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IQD005N04NM6CGSCATMA1 is usually 5 days.

3.What payment methods are accepted for IQD005N04NM6CGSCATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IQD005N04NM6CGSCATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IQD005N04NM6CGSCATMA1?

IQD005N04NM6CGSCATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IQD005N04NM6CGSCATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IQD005N04NM6CGSCATMA1?

For technical support, including IQD005N04NM6CGSCATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IQD005N04NM6CGSCATMA1 requirements.

6.How does Aetrix verify that IQD005N04NM6CGSCATMA1 is sourced from the original manufacturer or authorized distributors?

All IQD005N04NM6CGSCATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IQD005N04NM6CGSCATMA1 meets industry standards.

7.What is the process for return or replacement of IQD005N04NM6CGSCATMA1?

All IQD005N04NM6CGSCATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IQD005N04NM6CGSCATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IQD005N04NM6CGSCATMA1 part is unused and in its original packaging.

Return procedure for IQD005N04NM6CGSCATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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