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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IQD005N04NM6SCATMA1

Name: IQD005N04NM6SCATMA1
Brand: Infineon Technologies
SKU: IQD005N04NM6SCATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IQD005N04NM6SCATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerWDFN

Datasheet:: IQD005N04NM6SCATMA1.pdf

Description:: OPTIMOS POWER MOSFETS 25 V - 150

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Product details

Overview

IQD005N04NM6SCATMA1 from Infineon is a 40 V, 0.49 mΩ R_DS(on) N-channel enhancement-mode MOSFET in PG-WHSON-8 package with double-side cooling capability, 100% avalanche tested, and qualified for industrial applications. It delivers 597 A continuous drain current at T_C = 25 °C and supports high-efficiency synchronous rectification in DC-DC converters.

For engineers reviewing the IQD005N04NM6SCATMA1 datasheet, IQD005N04NM6SCATMA1 pinout, IQD005N04NM6SCATMA1 application, or IQD005N04NM6SCATMA1 equivalent, key selection criteria include its ultra-low R_DS(on), dual thermal path design, gate charge profile (Q_g = 130 nC), and robust 1115 mJ single-pulse avalanche energy rating.

Technical Context

This OptiMOS™ 6 device uses trench-based silicon technology optimized for high-current, low-voltage switching in power stages. Its 0.42–0.54 mΩ R_DS(on) range (V_GS = 10 V, I_D = 50 A) and 142 nC output charge (Q_oss) enable fast, low-loss transitions in hard-switched topologies.

The PG-WHSON-8 package integrates an exposed drain tab for bottom-side thermal conduction (R_thJC = 0.45 °C/W) and top-side cooling (R_thJC = 0.56 °C/W), supporting bidirectional heat extraction in compact, high-power-density designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V/24 V/48 V bus systems
R_DS(on), max	0.49 mΩ at V_GS = 10 V, I_D = 50 A - Enables <1 W conduction loss at 500 A in parallel configurations
I_D, cont	597 A at T_C = 25 °C - Supports multi-phase VRMs and high-current battery switches
Q_g	130 nC - Defines gate drive power requirement for 100–500 kHz operation
E_AS	1115 mJ - Withstands repetitive inductive switching stress without failure
R_thJC (bottom)	0.45 °C/W - Allows >300 W dissipation with 70 °C temperature rise to case
Q_oss	142 nC - Directly impacts turn-off energy and snubber sizing in hard-switched converters

Pinout & Package

Package: PG-WHSON-8 (exposed drain tab, 5 mm × 6 mm, 0.55 mm height), optimized for double-side cooling and automated optical inspection.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Pins 5–8 + Tab)	Main current path collector	Exposed metal tab serves as primary thermal and electrical drain connection; requires soldered thermal pad
Gate (Pin 4)	Control terminal	Low-impedance input (R_G = 0.68 Ω) compatible with standard gate drivers; threshold V_GS(th) = 1.8–2.8 V
Source (Pins 1–3)	Reference node for gate drive and current sensing	Three-pin parallel layout minimizes source inductance for high di/dt stability
Internal Body Diode	Integrated freewheeling path	Forward voltage V_SD = 0.78–1.0 V at 50 A; t_rr = 29–116 ns depending on dI/dt

Key Features

Feature	Design Value
Double-side cooling architecture	Enables thermal management flexibility in constrained PCB layouts via simultaneous top/bottom heat extraction
100% avalanche tested	Guarantees ruggedness under unclamped inductive switching-no derating required for EAS-limited designs
Ultra-low Q_g/R_DS(on) ratio	130 nC / 0.49 mΩ = 265 nC·mΩ - balances switching loss and conduction loss for 300–600 kHz operation
Pb-free, halogen-free	Complies with RoHS and IEC61249-2-21 - suitable for automotive and industrial end-equipment without exemptions
Optimized for synchronous FET use	Q_g(sync) = 122 nC at V_DS = 0.1 V - reduces reverse conduction losses in buck/boost/flyback topologies

Applications

Server VRM Power Stage

Industrial 48 V DC-DC Converter

Use Scenario: High-current, multiphase buck converter supplying CPU/GPU core voltage (0.6–1.2 V) at up to 1000 A peak.

IC Role / Device Role / Timing Role: Synchronous high-side switch operating at 300–500 kHz with tight duty-cycle control.

Use Value: 0.49 mΩ R_DS(on) limits conduction loss to <0.5 W per phase at 125 A; double-side cooling maintains junction temp <125 °C under full load.

Use Scenario: Isolated 48 V-to-12 V LLC or phase-shifted full-bridge converter for factory automation PLCs.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier or secondary-side FET in high-frequency resonant topology.

Use Value: 142 nC Q_oss enables efficient zero-voltage switching (ZVS) extension; 1115 mJ E_AS tolerates transient overcurrent during startup/fault.

EV Onboard Charger (OBC) PFC Stage

High-Power Motor Drive Inverter

Use Scenario: 6.6 kW two-stage OBC with totem-pole PFC using SiC/GaN-compatible high-speed switching.

IC Role / Device Role / Timing Role: Low-side switch in interleaved totem-pole bridge with 100–200 kHz switching.

Use Value: 0.68 Ω gate resistance suppresses ringing without external damping; 29–116 ns t_rr ensures clean commutation with minimal voltage overshoot.

Use Scenario: 15–30 kW traction inverter sub-module for electric forklifts or e-bikes.

IC Role / Device Role / Timing Role: Half-bridge low-side switch in 6–12 kHz PWM-driven inverter with regenerative braking.

Use Value: 294 A I_S rating supports motor phase current peaks; 0.45 °C/W R_thJC allows direct heatsink mounting without thermal interface material degradation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB017N04LGATMA1	R_DS(on) = 0.17 mΩ (lower), but larger PG-HSOF-8 package (6.1 × 5.1 mm); higher Q_g = 165 nC	Better for ultra-low-loss, space-tolerant designs; less suitable for double-side cooled modules	Select when lowest possible conduction loss dominates; avoid if board real estate or dual thermal path is constrained
IRL1404ZPBF	R_DS(on) = 4.0 mΩ (10× higher); TO-220 package; no avalanche rating; Q_g = 71 nC	Legacy replacement only; unsuitable for high-current (>50 A) or high-reliability industrial use	Acceptable for cost-sensitive, low-power (<500 W) prototypes; not recommended for production-grade 48 V systems

Compared with IPB017N04LGATMA1, IQD005N04NM6SCATMA1 trades 0.32 mΩ higher R_DS(on) for 1.1 mm² smaller footprint and superior thermal symmetry; versus IRL1404ZPBF, it delivers 8.2× lower conduction loss and certified avalanche ruggedness essential for automotive-qualified inverters.

Availability

IQD005N04NM6SCATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial 48 V DC-DC converters, EV onboard chargers, and high-power motor drives requiring stable component supply and long-term industrial qualification.

Supply support for IQD005N04NM6SCATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and security solutions, with global manufacturing and R&D infrastructure.

This part belongs to the OptiMOS™ 6 family-designed specifically for high-efficiency, high-current switching in datacenter, industrial, and e-mobility power systems where thermal density and reliability are critical.

FAQ

What is the maximum allowable PCB copper area for optimal thermal performance?

The datasheet specifies a 40 mm × 40 mm × 1.5 mm FR4 PCB with 6 cm² of 70 μm-thick copper for source connection as the reference test condition. For best thermal performance, extend the copper pour under the exposed drain tab and connect source pins to ≥10 cm² of inner-layer copper using multiple thermal vias (≥12× 0.3 mm diameter).

Does IQD005N04NM6SCATMA1 support gate oxide protection against dv/dt-induced false turn-on?

Yes-the device features a robust gate oxide with guaranteed |dV_DS/dt| immunity up to 50 V/ns at V_GS = 0 V, validated per JEDEC JESD22-A118. This eliminates need for negative gate drive or external Miller clamps in typical 48 V half-bridge layouts.

Can this MOSFET be used in linear mode (active region) for hot-swap or inrush limiting?

No-it is not characterized or rated for linear-mode operation. The Safe Operating Area (SOA) diagram shows limited DC capability beyond 100 A at V_DS > 5 V. For inrush control, use dedicated hot-swap controllers or discrete linear FETs with SOA-rated packages like TO-247.

Is the PG-WHSON-8 package compatible with standard reflow profiles for lead-free assembly?

Yes-Infineon qualifies this package for IPC/JEDEC J-STD-020D Level 3 moisture sensitivity and standard Pb-free reflow (peak 260 °C, 20–40 s above 217 °C). Pre-bake at 125 °C for 24 h is required if MSL exposure exceeds 168 h at ≤30 °C/60% RH.

IQD005N04NM6SCATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 6

Package/Case:: 8-PowerWDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 57A (Ta), 597A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 0.49mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2.8V @ 1.449mA

Gate Charge (Qg) (Max) @ Vgs:: 163 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 12000 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 333W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-WHSON-8-U02

IQD005N04NM6SCATMA1 FAQ

1.How can I place an order for IQD005N04NM6SCATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IQD005N04NM6SCATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IQD005N04NM6SCATMA1 reliable?

The price and inventory of IQD005N04NM6SCATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IQD005N04NM6SCATMA1 is usually 5 days.

3.What payment methods are accepted for IQD005N04NM6SCATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IQD005N04NM6SCATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IQD005N04NM6SCATMA1?

IQD005N04NM6SCATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IQD005N04NM6SCATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IQD005N04NM6SCATMA1?

For technical support, including IQD005N04NM6SCATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IQD005N04NM6SCATMA1 requirements.

6.How does Aetrix verify that IQD005N04NM6SCATMA1 is sourced from the original manufacturer or authorized distributors?

All IQD005N04NM6SCATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IQD005N04NM6SCATMA1 meets industry standards.

7.What is the process for return or replacement of IQD005N04NM6SCATMA1?

All IQD005N04NM6SCATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IQD005N04NM6SCATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IQD005N04NM6SCATMA1 part is unused and in its original packaging.

Return procedure for IQD005N04NM6SCATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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