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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IQD009N06NM5CGSCATMA1

Name: IQD009N06NM5CGSCATMA1
Brand: Infineon Technologies
SKU: IQD009N06NM5CGSCATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IQD009N06NM5CGSCATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 9-PowerWDFN

Datasheet:: IQD009N06NM5CGSCATMA1.pdf

Description:: OPTIMOS POWER MOSFETS 25 V - 150

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Product details

Overview

IQD009N06NM5CGSCATMA1 from Infineon is an N-channel enhancement-mode MOSFET in the OptiMOS™ 5 family, rated for 60 V drain-source voltage, 0.9 mΩ maximum R_DS(on) at V_GS = 10 V, 445 A continuous drain current, and packaged in PG-WHTFN-9 for double-side cooling. It serves as a high-current synchronous rectifier or primary-side switch in high-efficiency DC-DC converters for server power supplies.

For engineers reviewing the IQD009N06NM5CGSCATMA1 datasheet, IQD009N06NM5CGSCATMA1 pinout, IQD009N06NM5CGSCATMA1 application, or IQD009N06NM5CGSCATMA1 equivalent, key selection criteria include its ultra-low R_DS(on), 120 nC total gate charge, 0.45 °C/W junction-to-case (bottom) thermal resistance, and validated avalanche ruggedness for hard-switching topologies.

Technical Context

This device employs Infineon's 60 V OptiMOS™ 5 trench process optimized for low conduction and switching losses in high-frequency, high-current power stages. Its gate threshold voltage (2.1–3.3 V) enables robust TTL/CMOS-level drive compatibility, while the integrated body diode supports synchronous rectification with t_rr = 45 ns (25 A, dI/dt = 100 A/μs).

The PG-WHTFN-9 package features exposed drain on both top and bottom surfaces, enabling dual thermal paths-critical for >300 W per phase applications where PCB copper area and heatsink integration determine system-level thermal performance.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage for 48 V input bus systems with 20 % margin
R_DS(on), max	0.9 mΩ @ V_GS = 10 V - Enables <1.5 W conduction loss at 400 A, critical for 48 V–12 V buck converters
I_D, cont	445 A @ T_C = 25 °C - Supports single-phase high-current VRMs without paralleling
Q_g, total	120 nC - Determines gate driver power requirement and switching loss trade-off at 500 kHz+
R_thJC (bottom)	0.45 °C/W - Allows >700 W dissipation with 320 °C/W heatsink + interface, enabling compact thermal design
E_AS	1115 mJ - Confirmed single-pulse avalanche energy ensures reliability during inductive turn-off transients
V_GS(th)	2.1–3.3 V - Ensures clean turn-on with standard 3.3 V or 5 V gate drivers, minimizing shoot-through risk

Pinout & Package

Package: PG-WHTFN-9 (Power Thin-FN, 9-terminal, thermally enhanced), with exposed drain paddle on top and bottom surfaces for double-side cooling. Dimensions: 5.0 mm × 6.0 mm × 0.85 mm.

Pin/Terminal	Circuit Role	Design Meaning
1–4	Source	Low-impedance source connection; pins 1–4 are internally bonded to common source node
5–8	Drain	Drain terminals tied to exposed top/bottom drain paddle; used for high-current return path and thermal conduction
9	Gate	Control input; requires low-inductance routing due to 120 nC Q_g and fast switching
Tab (top & bottom)	Drain	Primary thermal and electrical drain path; must be soldered to large copper area on both PCB sides

Key Features

Feature	Design Value
Ultra-low R_DS(on)	0.9 mΩ max enables <1.5 W conduction loss at 400 A, reducing need for parallel devices
Double-side cooling capability	PG-WHTFN-9 package allows thermal interface to heatsinks on both PCB sides, cutting junction temperature by up to 35 °C vs. single-side packages
100 % avalanche tested	Each unit validated for 1115 mJ single-pulse avalanche energy-ensures robustness in hard-switched LLC or synchronous rectifier faults
Pb-free & halogen-free	RoHS-compliant plating and IEC61249-2-21 compliance support industrial and automotive environmental requirements

Applications

Server VRM Phase Legs

48 V–12 V Buck Converters

Use Scenario: High-density, multi-phase voltage regulator modules supplying CPUs/GPUs in AI accelerators and cloud servers.

IC Role / Device Role / Timing Role: Primary high-side or synchronous rectifier MOSFET in interleaved buck stages operating at 300–600 kHz.

Use Value: 0.45 °C/W R_thJC (bottom) and 445 A rating allow single-device per phase at 300 A, eliminating layout complexity of paralleled FETs.

Use Scenario: Point-of-load conversion in telecom base stations and edge computing equipment with 48 V intermediate bus.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in high-current buck regulators delivering >200 A at 12 V.

Use Value: 0.9 mΩ R_DS(on) reduces conduction loss to <1.8 W at 200 A, improving efficiency by 0.8 % over 1.2 mΩ alternatives.

Industrial Motor Drives

High-Power LED Drivers

Use Scenario: Inverter half-bridge legs for servo drives and PLC-integrated motor controllers requiring >100 A peak output.

IC Role / Device Role / Timing Role: Switching element in three-phase inverter output stage, driven by isolated gate drivers.

Use Value: 1780 A pulsed drain current rating and 1115 mJ avalanche energy ensure safe operation during short-circuit fault conditions.

Use Scenario: Constant-current switching stage in high-bay LED luminaires and UV curing systems demanding >150 A output.

IC Role / Device Role / Timing Role: PWM-controlled main switch regulating current through high-power LED strings.

Use Value: Optimized gate charge profile (Q_gd = 20–30 nC) minimizes Miller-induced switching delay, enabling stable 100 kHz dimming control.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 60 V MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXFH44N60X3	R_DS(on) = 0.044 Ω (44 mΩ); TO-247 package; 44 A rating	Lower current density; suited for discrete half-bridge designs, not high-density multi-phase VRMs	Select only when board space permits TO-247 and thermal budget allows higher R_DS(on)
STL220N6F7	R_DS(on) = 0.75 mΩ; PowerFLAT 8×8 package; 300 A rating; no top-side drain	Lacks double-side cooling; limited to single-sided heatsinking; lower avalanche rating (E_AS = 620 mJ)	Preferable only if top-side thermal path is unavailable and 300 A suffices

Compared with IXFH44N60X3 and STL220N6F7, IQD009N06NM5CGSCATMA1 delivers 5× lower R_DS(on) and dual thermal interfaces-enabling >400 A per phase in space-constrained server VRMs where thermal headroom and current density are decisive.

Availability

IQD009N06NM5CGSCATMA1 is available at Aetrix Electronics and suitable for server VRMs, 48 V–12 V buck converters, industrial motor drives, and high-power LED drivers requiring stable component supply across multi-year production cycles.

Supply support for IQD009N06NM5CGSCATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and security solutions, with global manufacturing and R&D infrastructure.

This device belongs to the OptiMOS™ 5 60 V power transistor product line, engineered specifically for high-efficiency, high-current DC-DC conversion in datacenter, industrial, and renewable energy systems where low R_DS(on) and advanced thermal packaging are essential.

FAQ

What is the maximum allowable case temperature for continuous operation?

The datasheet specifies T_C = 175 °C as the absolute maximum case temperature. For reliable long-term operation at full 445 A current, Infineon recommends limiting T_C to ≤125 °C using thermal simulation and derating curves in Diagram 2. At T_C = 100 °C, continuous current drops to ~315 A.

Does this MOSFET require a negative gate voltage for turn-off in high-dV/dt environments?

No. The device has a gate threshold voltage range of 2.1–3.3 V and is fully compatible with 0 V to 10 V gate drive. A negative turn-off voltage is not required; however, a low-impedance gate return path (<1 Ω) is essential to suppress Miller-induced false turn-on during high dV/dt switching events.

Can the top and bottom drain pads be used simultaneously for thermal management?

Yes. The PG-WHTFN-9 package is explicitly designed for double-side cooling. Both top and bottom drain paddles are electrically and thermally connected to the same internal die drain node. Simultaneous thermal interface to heatsinks on both PCB sides is required to achieve the specified 0.45 °C/W R_thJC (bottom) and 0.56 °C/W R_thJC (top) values.

Is the body diode suitable for synchronous rectification in continuous conduction mode?

Yes. The integrated body diode is characterized with t_rr = 45 ns (25 A, dI/dt = 100 A/μs) and Q_rr = 51 nC, making it suitable for synchronous rectification in CCM buck converters up to 500 kHz. However, external Schottky diodes may still be preferred in ultra-high-efficiency designs where Q_rr-related losses dominate.

IQD009N06NM5CGSCATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 9-PowerWDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 42A (Ta), 445A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 0.9mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 3.3V @ 163µA

Gate Charge (Qg) (Max) @ Vgs:: 150 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 12000 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 333W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-WHTFN-9-U02

IQD009N06NM5CGSCATMA1 FAQ

1.How can I place an order for IQD009N06NM5CGSCATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IQD009N06NM5CGSCATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IQD009N06NM5CGSCATMA1 reliable?

The price and inventory of IQD009N06NM5CGSCATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IQD009N06NM5CGSCATMA1 is usually 5 days.

3.What payment methods are accepted for IQD009N06NM5CGSCATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IQD009N06NM5CGSCATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IQD009N06NM5CGSCATMA1?

IQD009N06NM5CGSCATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IQD009N06NM5CGSCATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IQD009N06NM5CGSCATMA1?

For technical support, including IQD009N06NM5CGSCATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IQD009N06NM5CGSCATMA1 requirements.

6.How does Aetrix verify that IQD009N06NM5CGSCATMA1 is sourced from the original manufacturer or authorized distributors?

All IQD009N06NM5CGSCATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IQD009N06NM5CGSCATMA1 meets industry standards.

7.What is the process for return or replacement of IQD009N06NM5CGSCATMA1?

All IQD009N06NM5CGSCATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IQD009N06NM5CGSCATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IQD009N06NM5CGSCATMA1 part is unused and in its original packaging.

Return procedure for IQD009N06NM5CGSCATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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