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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IQD016N08NM5CGSCATMA1

Name: IQD016N08NM5CGSCATMA1
Brand: Infineon Technologies
SKU: IQD016N08NM5CGSCATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IQD016N08NM5CGSCATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 9-PowerWDFN

Datasheet:: IQD016N08NM5CGSCATMA1.pdf

Description:: OPTIMOS POWER MOSFETS 25 V - 150

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Product details

Overview

IQD016N08NM5CGSCATMA1 from Infineon is an N-channel 80 V OptiMOS™ 5 power MOSFET in PG-WHTFN-9 package, featuring 1.57 mΩ max R_DS(on) at V_GS = 10 V, 323 A continuous drain current, and 106 nC total gate charge. It is optimized for high-efficiency synchronous rectification and double-side cooling in industrial DC-DC converters.

For engineers reviewing the IQD016N08NM5CGSCATMA1 datasheet, IQD016N08NM5CGSCATMA1 pinout, IQD016N08NM5CGSCATMA1 application, or IQD016N08NM5CGSCATMA1 equivalent, key selection criteria include thermal resistance (0.45 °C/W j–case bottom), avalanche ruggedness (802 mJ), and low Q_g/Q_oss ratio for hard-switching efficiency.

Technical Context

This device employs a trench-based silicon process with optimized cell pitch and deep-trench gate structure to achieve ultra-low R_DS(on) × Q_g figure-of-merit. Its dual-sided thermal interface supports direct heatsink mounting on both top and bottom surfaces.

The integrated body diode exhibits 0.82 V typical forward voltage at 50 A and 25 °C, with t_rr of 48 ns under dI/dt = 100 A/μs - enabling use in synchronous buck stages without external Schottky replacement.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Maximum blocking voltage for 48 V input bus systems with 20 % margin
R_DS(on), max	1.57 mΩ at V_GS = 10 V - Enables <1.5 W conduction loss at 300 A
I_D, cont	323 A at T_C = 25 °C - Supports high-current phase legs in server VRMs
Q_g, total	106 nC - Low gate drive energy reduces controller loading in high-frequency (>500 kHz) operation
R_thJC, bottom	0.45 °C/W - Allows >300 W dissipation with 135 °C case rise over ambient
E_AS	802 mJ - Withstands single-pulse inductive energy in motor drive fault conditions
Q_oss	123 nC - Minimizes turn-off loss during hard switching at 40 V V_DS

Pinout & Package

PG-WHTFN-9 is a 9-terminal exposed-drain copper-clip package with top-side thermal pad and bottom-side cooling interface. Drain terminals are internally paralleled across pins 5–8 and the metal tab for low-inductance, high-current routing.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1–4	Source	Four dedicated source connections reduce source inductance and improve gate control stability
Pin 5–8 + Tab	Drain	Parallel drain paths minimize voltage overshoot during high di/dt switching
Pin 9	Gate	Single gate input with 0.35 Ω internal gate resistance - simplifies gate driver layout
Internal Body Diode	Anti-parallel	Integrated into die structure; enables synchronous rectification without discrete diode

Key Features

Feature	Design Value
Double-side cooling capability	0.45 °C/W (j–case bottom) + 0.56 °C/W (j–case top) - enables thermal management in constrained 2U server chassis
100 % avalanche tested	Rated for 802 mJ single-pulse E_AS - eliminates need for external snubbers in inductive load switching
Optimized for synchronous FET operation	Q_g(sync) = 90 nC at V_GS = 0.1 V - ensures fast turn-on with minimal reverse recovery penalty
Pb-free & halogen-free	RoHS-compliant plating per IEC61249-2-21 - meets IPC-J-STD-020 moisture sensitivity level 3

Applications

Server VRM Phase Legs

Industrial DC-DC Converters

Use Scenario: High-density 48 V–12 V step-down conversion in AI accelerator racks requiring >800 A per rail.

IC Role / Device Role / Timing Role: Synchronous high-side FET in multiphase buck converter with 600 kHz switching frequency.

Use Value: 1.57 mΩ R_DS(on) and 0.45 °C/W thermal resistance enable 97.2 % peak efficiency at 300 A output.

Use Scenario: Isolated 400 V–48 V LLC secondary-side synchronous rectification in factory automation power supplies.

IC Role / Device Role / Timing Role: Low-V_GS(th) (2.2–3.8 V) N-channel FET replacing Schottky diodes in center-tapped rectifier.

Use Value: 0.82 V V_SD and 48 ns t_rr reduce conduction and switching losses by 35 % vs. 45 V Schottky.

Motor Drive Half-Bridges

Renewable Energy Inverters

Use Scenario: 75 kW traction inverter module for electric forklifts operating at 80 °C ambient.

IC Role / Device Role / Timing Role: Low-side switch in three-phase IGBT/MOSFET hybrid half-bridge with active short-circuit protection.

Use Value: 802 mJ E_AS rating withstands motor regeneration spikes without desaturation fault triggering.

Use Scenario: 15 kW string inverter DC optimizer stage with bidirectional power flow capability.

IC Role / Device Role / Timing Role: Bidirectional switch in active clamp flyback topology supporting reverse current during grid feedback.

Use Value: Symmetrical R_DS(on) and low Q_oss/Q_g ratio ensure <2.1 % conduction loss in both directions at 200 A.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 80 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTH120N075L2	R_DS(on) = 0.75 mΩ (lower), but TO-247 package with R_thJC = 0.55 °C/W and no double-side cooling	Requires single-sided heatsinking; unsuitable for ultra-thin modules	Select when lowest possible R_DS(on) dominates over thermal footprint constraints
IPB180N08N5	Same OptiMOS™ 5 family, 1.8 mΩ R_DS(on), PG-HSOF-8 package, no top-side thermal pad	Limited to bottom-side cooling only; lower current rating (240 A)	Select when cost sensitivity outweighs thermal performance and board space is less constrained

Compared with IXTH120N075L2 and IPB180N08N5, IQD016N08NM5CGSCATMA1 uniquely balances ultra-low R_DS(on), dual thermal interfaces, and compact PG-WHTFN-9 footprint - making it optimal for space-constrained, high-power-density designs where thermal headroom is critical.

Availability

IQD016N08NM5CGSCATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, motor drive half-bridges, and renewable energy inverters requiring stable component supply across multi-year production cycles.

Supply support for IQD016N08NM5CGSCATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

This part belongs to the OptiMOS™ 5 product line, engineered specifically for high-efficiency, high-current power conversion in datacenter, industrial, and e-mobility applications demanding low R_DS(on) × Q_g and robust thermal performance.

FAQ

What is the maximum junction temperature rating for IQD016N08NM5CGSCATMA1?

The absolute maximum junction temperature is 175 °C, with continuous operation rated up to this limit under specified thermal conditions. The device is fully qualified per JEDEC JESD47 for industrial applications and supports derated operation down to –55 °C storage temperature.

Does IQD016N08NM5CGSCATMA1 require a negative gate voltage for reliable turn-off?

No - the device has a gate threshold voltage range of 2.2 V to 3.8 V and is designed for standard 0 V to 10 V gate drive. A negative gate voltage is not required; however, applying –5 V improves noise immunity in high-dV/dt environments such as motor drives.

Can IQD016N08NM5CGSCATMA1 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (normalized to 2.4× at 175 °C) ensures inherent current sharing. Parallel operation requires matched gate drive loop inductance and symmetrical PCB layout to avoid dynamic current imbalance above 200 kHz.

Is the internal body diode suitable for reverse conduction in bidirectional topologies?

Yes - the diode is fully rated for 256 A continuous forward current and 1292 A pulsed current. Its 48 ns t_rr and 71 nC Q_rr at dI/dt = 100 A/μs make it viable for bidirectional soft-switched converters, though hard-switched reverse recovery should be avoided above 100 kHz.

IQD016N08NM5CGSCATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 9-PowerWDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 31A (Ta), 323A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 1.57mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 3.8V @ 159µA

Gate Charge (Qg) (Max) @ Vgs:: 133 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 9200 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 333W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-WHTFN-9-U02

IQD016N08NM5CGSCATMA1 FAQ

1.How can I place an order for IQD016N08NM5CGSCATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IQD016N08NM5CGSCATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IQD016N08NM5CGSCATMA1 reliable?

The price and inventory of IQD016N08NM5CGSCATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IQD016N08NM5CGSCATMA1 is usually 5 days.

3.What payment methods are accepted for IQD016N08NM5CGSCATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IQD016N08NM5CGSCATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IQD016N08NM5CGSCATMA1?

IQD016N08NM5CGSCATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IQD016N08NM5CGSCATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IQD016N08NM5CGSCATMA1?

For technical support, including IQD016N08NM5CGSCATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IQD016N08NM5CGSCATMA1 requirements.

6.How does Aetrix verify that IQD016N08NM5CGSCATMA1 is sourced from the original manufacturer or authorized distributors?

All IQD016N08NM5CGSCATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IQD016N08NM5CGSCATMA1 meets industry standards.

7.What is the process for return or replacement of IQD016N08NM5CGSCATMA1?

All IQD016N08NM5CGSCATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IQD016N08NM5CGSCATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IQD016N08NM5CGSCATMA1 part is unused and in its original packaging.

Return procedure for IQD016N08NM5CGSCATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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