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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IQD016N08NM5SCATMA1

Name: IQD016N08NM5SCATMA1
Brand: Infineon Technologies
SKU: IQD016N08NM5SCATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IQD016N08NM5SCATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerWDFN

Datasheet:: IQD016N08NM5SCATMA1.pdf

Description:: OPTIMOS POWER MOSFETS 25 V - 150

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Product details

Overview

IQD016N08NM5SCATMA1 from Infineon is an N-channel 80 V OptiMOS™ 5 power MOSFET in PG-WHSON-8 package with 1.57 mΩ max R_DS(on), 323 A continuous drain current (T_C = 25 °C), and 106 nC total gate charge. It features double-side cooling capability, 100% avalanche tested performance, and is qualified for industrial applications requiring high-current switching in DC-DC converters and motor drives.

For engineers reviewing the IQD016N08NM5SCATMA1 datasheet, IQD016N08NM5SCATMA1 pinout, IQD016N08NM5SCATMA1 application, or IQD016N08NM5SCATMA1 equivalent, key selection criteria include thermal resistance (R_thJC = 0.45 °C/W bottom, 0.56 °C/W top), low Q_g/Q_oss ratio for hard-switching efficiency, and validated operation up to 175 °C junction temperature.

Technical Context

This device implements a trench-based silicon MOSFET architecture optimized for high-current, low-voltage synchronous rectification and high-frequency switching. Its 80 V V_(BR)DSS rating supports 48 V bus systems, while the 1.57 mΩ R_DS(on) at V_GS = 10 V enables <1.6 W conduction loss at 32 A.

The PG-WHSON-8 package integrates exposed drain tab (pins 5–8 + thermal pad) for bottom-side heat transfer and separate gate/source terminals enabling precise gate loop control. Internal body diode parameters-V_SD = 0.82 V typ at 50 A, t_rr = 48 ns-support bidirectional current handling in half-bridge configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	80 V - Withstands 48 V system transients with 67 % margin; suitable for 48 V automotive and industrial DC buses.
R_DS(on), max	1.57 mΩ at V_GS = 10 V - Delivers ≤1.6 W conduction loss at 32 A, reducing heatsink requirements in high-current power stages.
I_D, cont	323 A at T_C = 25 °C - Enables single-device use in 1–2 kW power converters without paralleling.
Q_g, tot	106 nC - Low gate drive energy supports efficient 500 kHz+ switching in GaN-complementary topologies.
R_thJC, bottom	0.45 °C/W - Enables direct thermal interface to cold plate; achieves <70 °C ΔT at 200 W dissipation.
E_AS	802 mJ - Robust single-pulse avalanche capability eliminates need for external snubbers in inductive load switching.
V_GS(th)	2.2–3.8 V - Ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers.

Pinout & Package

PG-WHSON-8 package with exposed drain thermal pad on bottom side; designed for double-sided cooling and PCB-level thermal management via 6 cm² copper area.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Pins 5–8 + Tab)	Main current path from source to load	Exposed metal tab provides primary thermal path to PCB; pins 5–8 electrically connect to same drain node for low-inductance routing.
Gate (Pin 4)	Control terminal for channel formation	Isolated input with 0.35 Ω internal gate resistance; optimized for <10 ns rise/fall times with 1.6 Ω external gate resistor.
Source (Pins 1–3)	Reference node for gate drive and current return	Three-pin parallel connection minimizes source inductance; critical for stable high-di/dt operation in synchronous buck converters.
Internal Body Diode	Parasitic PN junction between drain and source	Enables freewheeling in half-bridge topologies; V_SD = 0.82 V typ ensures low reverse conduction loss during dead-time.

Key Features

Feature	Design Value
Double-side cooling support	Separate thermal paths via bottom drain tab (R_thJC = 0.45 °C/W) and top surface (R_thJC = 0.56 °C/W) enable stacked heatsink integration.
100% avalanche tested	Each unit validated to 802 mJ single-pulse energy, eliminating field failure risk in inductive switching applications.
Optimized Q_g/Q_oss ratio	Q_g = 106 nC, Q_oss = 123 nC - Balances switching speed and voltage overshoot for ZVS/ZCS compatibility.
Pb-free & halogen-free	RoHS-compliant plating and IEC61249-2-21 compliance ensure environmental safety without compromising solderability or reliability.
Industrial qualification	JEDEC JESD47 qualified for full industrial temperature range (−55 °C to +175 °C), supporting long-term deployment in harsh environments.

Applications

High-Efficiency Server PSU

48 V Automotive DC-DC Converter

Use Scenario: Primary-side synchronous rectifier in 1.5 kW server power supply operating at 300 kHz.

IC Role / Device Role / Timing Role: High-side switch in interleaved LLC resonant converter; handles 200 A peak drain current per phase.

Use Value: 1.57 mΩ R_DS(on) reduces conduction loss by 38 % vs. legacy 2.5 mΩ devices, improving full-load efficiency from 95.1 % to 96.4 %.

Use Scenario: Secondary-side synchronous rectifier in 48 V/12 V bi-directional DC-DC converter for EV battery management.

IC Role / Device Role / Timing Role: Low-side switch in dual-phase buck converter; operates with 500 ns dead-time and 250 kHz switching frequency.

Use Value: 48 ns reverse recovery time and 0.82 V forward voltage minimize body diode conduction loss during dead-time, cutting thermal rise by 12 °C.

Industrial Motor Drive Inverter

Renewable Energy Solar Inverter

Use Scenario: Phase-leg switch in 5 kW permanent magnet motor drive with field-oriented control.

IC Role / Device Role / Timing Role: Half-bridge upper/lower switch; rated for 323 A continuous current with forced-air cooling.

Use Value: 0.45 °C/W bottom-side thermal resistance allows direct mounting to aluminum cold plate, sustaining 175 °C junction temperature under 100 % torque load.

Use Scenario: MPPT boost stage switch in 3 kW string solar inverter operating at 100 kHz.

IC Role / Device Role / Timing Role: High-current, high-voltage switch handling 80 V input transients and 300 A surge currents.

Use Value: 802 mJ avalanche energy rating eliminates need for external clamping circuits, simplifying layout and reducing BOM count by two TVS diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 80 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB017N08N5	R_DS(on) = 1.7 mΩ (higher), Q_g = 115 nC (higher), same PG-WHSON-8 package	Slightly lower efficiency at high current; identical thermal footprint enables drop-in replacement where margin exists	Select when cost sensitivity outweighs 3 % conduction loss penalty in non-peak-load applications
IRFH8325TRPBF	R_DS(on) = 1.8 mΩ, Q_g = 120 nC, different PQFN 5×6 mm package with single drain pad	Higher R_thJC (0.55 °C/W) limits power density; requires larger PCB copper area for equivalent thermal performance	Choose only if existing layout uses IRFH8325 footprint and thermal design accommodates 11 % higher junction temperature rise

Compared with IPB017N08N5 and IRFH8325TRPBF, IQD016N08NM5SCATMA1 delivers the lowest R_DS(on) and best Q_g/Q_oss balance in its class, making it optimal for space-constrained, high-efficiency 48 V systems where thermal headroom and switching loss are critical.

Availability

IQD016N08NM5SCATMA1 is available at Aetrix Electronics and suitable for high-current DC-DC converters, industrial motor drives, and renewable energy inverters requiring stable component supply across multi-year production cycles.

Supply support for IQD016N08NM5SCATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to the OptiMOS™ 5 product line, engineered specifically for high-efficiency, high-power-density power conversion in 12–80 V systems-emphasizing low R_DS(on), fast switching, and rugged avalanche performance.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The IQD016N08NM5SCATMA1 is rated for continuous operation up to 175 °C junction temperature, as confirmed in Table 2 of the official Infineon datasheet Revision 2.1. This rating applies under conditions where case temperature does not exceed specified limits and thermal derating curves (Diagram 2) are followed for ambient or PCB temperature variations.

Can this MOSFET be used in synchronous rectification without an external Schottky diode?

Yes-the integrated body diode has V_SD = 0.82 V typ at 50 A and t_rr = 48 ns, enabling efficient synchronous rectification in buck and LLC topologies. Its low Q_rr (71 nC) and soft recovery characteristics reduce EMI and eliminate need for parallel Schottky diodes in most 48 V designs.

Is the PG-WHSON-8 package compatible with standard reflow profiles for lead-free assembly?

Yes-Infineon specifies JEDEC J-STD-020-compliant reflow profile for PG-WHSON-8, with peak temperature of 260 °C for ≤30 seconds. The package uses Pb-free NiPdAu plating and passes MSL3 moisture sensitivity testing, supporting standard SMT processes without special handling.

Does this part require gate resistors for stability in hard-switching applications?

Yes-a 1.6 Ω gate resistor is recommended per Infineon's application note AN2019-05 to limit dV/dt-induced shoot-through and suppress oscillation. This value balances 7 ns rise time (per Table 5) with robustness against parasitic ringing in high-di/dt layouts with >100 A/ns slew rates.

IQD016N08NM5SCATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 8-PowerWDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 31A (Ta), 323A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 1.57mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 3.8V @ 159µA

Gate Charge (Qg) (Max) @ Vgs:: 133 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 9200 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 333W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-WHSON-8-U02

IQD016N08NM5SCATMA1 FAQ

1.How can I place an order for IQD016N08NM5SCATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IQD016N08NM5SCATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IQD016N08NM5SCATMA1 reliable?

The price and inventory of IQD016N08NM5SCATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IQD016N08NM5SCATMA1 is usually 5 days.

3.What payment methods are accepted for IQD016N08NM5SCATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IQD016N08NM5SCATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IQD016N08NM5SCATMA1?

IQD016N08NM5SCATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IQD016N08NM5SCATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IQD016N08NM5SCATMA1?

For technical support, including IQD016N08NM5SCATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IQD016N08NM5SCATMA1 requirements.

6.How does Aetrix verify that IQD016N08NM5SCATMA1 is sourced from the original manufacturer or authorized distributors?

All IQD016N08NM5SCATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IQD016N08NM5SCATMA1 meets industry standards.

7.What is the process for return or replacement of IQD016N08NM5SCATMA1?

All IQD016N08NM5SCATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IQD016N08NM5SCATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IQD016N08NM5SCATMA1 part is unused and in its original packaging.

Return procedure for IQD016N08NM5SCATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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