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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IQD020N10NM5CGSCATMA1

Name: IQD020N10NM5CGSCATMA1
Brand: Infineon Technologies
SKU: IQD020N10NM5CGSCATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IQD020N10NM5CGSCATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 9-PowerWDFN

Datasheet:: IQD020N10NM5CGSCATMA1.pdf

Description:: OPTIMOS POWER MOSFETS 25 V - 150

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Product details

Overview

IQD020N10NM5CGSCATMA1 from Infineon is an N-channel enhancement-mode MOSFET in the OptiMOS™ 5 family, designed for high-efficiency power conversion in industrial DC-DC and motor drive stages. It delivers 100 V V_DS, 2.05 mΩ R_DS(on) at V_GS = 10 V, 276 A continuous drain current (T_C = 25 °C), and features double-side cooling capability in a PG-WHTFN-9 package. It is used in high-current synchronous rectification and high-frequency buck converters.

For engineers reviewing the IQD020N10NM5CGSCATMA1 datasheet, IQD020N10NM5CGSCATMA1 pinout, IQD020N10NM5CGSCATMA1 application, or IQD020N10NM5CGSCATMA1 equivalent, key selection criteria include its ultra-low R_DS(on), dual thermal path design, 100% avalanche-tested ruggedness, and gate charge profile optimized for hard-switched topologies with <15 ns turn-on delay.

Technical Context

This device employs a trench-based silicon process with optimized cell pitch and reduced gate-drain charge (Q_gd = 23–35 nC) to minimize switching losses in high-frequency operation. Its dual thermal resistance specification-R_thJC,bottom = 0.45 °C/W and R_thJC,top = 0.56 °C/W-enables simultaneous heat extraction from both PCB side and heatsink interface.

The internal body diode supports synchronous FET operation with t_rr = 32–96 ns and Q_rr = 447–894 nC (dependent on di/dt), while the gate plateau voltage of 4.4 V ensures robust Miller immunity during commutation. The device is fully qualified per JEDEC JESD47 for industrial temperature range (−55 °C to +175 °C).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage for 48 V and 60 V bus systems with margin
R_DS(on) max	2.05 mΩ at V_GS = 10 V - Enables <1.4 W conduction loss at 250 A
I_D continuous	276 A at T_C = 25 °C - Supports high-current phase-legs without paralleling
Q_g total	107–134 nC - Matches gate drivers with ≥2 A peak output for <20 ns switching transitions
t_d(on)	15 ns - Allows >1 MHz operation in hard-switched topologies with minimal dead-time penalty
R_thJC bottom	0.45 °C/W - Enables direct thermal coupling to copper-filled PCB layers for passive cooling
E_AS	756 mJ - Withstands single-pulse inductive energy without failure in motor drive fault conditions

Pinout & Package

Package: PG-WHTFN-9 - Thermally enhanced wettable flank QFN with exposed drain tab on bottom and top, supporting double-side cooling and automated optical solder inspection.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Pins 5–8 + Tab)	Main current path collector	Electrically and thermally common drain connection across 4 pins + large metal tab for low-inductance, high-current routing
Gate (Pin 9)	Control electrode	Single dedicated gate input with low gate resistance (0.58 Ω) to reduce ringing and improve drive efficiency
Source (Pins 1–4)	Reference node and return path	Four-source pins minimize source inductance and enable Kelvin sensing in high-precision current monitoring designs

Key Features

Feature	Design Value
Double-side cooling architecture	Simultaneous thermal extraction via top and bottom surfaces reduces junction-to-ambient thermal resistance by up to 40% vs. standard QFN
100% avalanche rated	Guaranteed single-pulse avalanche energy of 756 mJ enables reliable operation under inductive load switching faults
Optimized gate charge profile	Low Q_gd/Q_g ratio (≈22%) minimizes Miller-induced turn-on risk in high-dV/dt environments
Pb-free & halogen-free	RoHS-compliant plating and IEC61249-2-21 halogen-free construction meet industrial environmental compliance requirements
Enhanced body diode performance	Reverse recovery time as low as 32 ns (at dI/dt = 1000 A/μs) improves light-load efficiency in synchronous rectifiers

Applications

Motor Drive Inverter Stage

High-Density Server PSU

Use Scenario: High-current 3-phase inverter stage in servo drives operating at 20–40 kHz switching frequency with peak phase currents >200 A.

IC Role / Device Role / Timing Role: Low-side switching element in 6-pack topology, handling bidirectional current with fast body diode recovery.

Use Value: 2.05 mΩ R_DS(on) cuts conduction loss by 35% versus prior-gen 100 V MOSFETs, enabling 98.2% system efficiency at full load.

Use Scenario: Primary-side synchronous rectifier in 48 V input, 12 V output LLC resonant converter for AI server power supplies.

IC Role / Device Role / Timing Role: Secondary-side synchronous FET with gate driven by transformer-coupled signal; requires low Q_g and tight V_GS(th) distribution.

Use Value: Gate plateau voltage of 4.4 V ensures clean turn-on even with ±0.5 V gate drive variation, reducing shoot-through risk.

Industrial UPS Output Stage

EV Onboard Charger (OBC) DC-DC

Use Scenario: Bidirectional DC-DC stage in modular uninterruptible power supply, switching at 100 kHz with 100 V bus and 400 A peak current.

IC Role / Device Role / Timing Role: High-current switch in interleaved buck-boost topology with forced-air and liquid-cooled heatsinking.

Use Value: Dual thermal paths (R_thJC,bottom = 0.45 °C/W, R_thJC,top = 0.56 °C/W) allow 22% higher power density than single-path alternatives.

Use Scenario: Isolated DC-DC converter in 11 kW OBC, stepping down 800 V battery to 400 V auxiliary rail with 50 kHz phase-shifted full-bridge control.

IC Role / Device Role / Timing Role: High-side switch in active clamp forward configuration requiring high dV/dt immunity and low Q_oss.

Use Value: C_oss = 1000–1300 pF at 50 V enables <1.2 μJ capacitive switching loss per cycle, critical for >97% partial-load efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 100 V MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N10F7	R_DS(on) = 2.2 mΩ (higher), Q_g = 120 nC (higher), R_thJC = 0.55 °C/W (single-side only)	Lacks top-side thermal path; not qualified for double-sided cooling PCB layouts	Prefer when cost sensitivity outweighs thermal density needs and board space allows larger heatsink footprint
IXFH210N10T2	TO-247 package, R_DS(on) = 2.1 mΩ, Q_g = 145 nC, no wettable flanks	Requires manual soldering and visual inspection; incompatible with reflow-only SMT lines	Select only for legacy through-hole designs or where mechanical mounting torque is required over thermal optimization

Compared with STL220N10F7 and IXFH210N10T2, IQD020N10NM5CGSCATMA1 offers superior thermal density via dual-side cooling, lower gate charge for faster switching, and automated assembly compatibility-making it optimal for next-gen high-power-density industrial and EV power modules.

Availability

IQD020N10NM5CGSCATMA1 is available at Aetrix Electronics and suitable for industrial motor drives, high-density server PSUs, and EV onboard charger DC-DC stages requiring stable component supply and long-term lifecycle support.

Supply support for IQD020N10NM5CGSCATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS™ 5 Power-Transistor product line, engineered specifically for high-efficiency, high-current industrial and automotive power conversion where thermal density, avalanche ruggedness, and switching speed are critical.

FAQ

What is the maximum allowable case temperature for continuous operation?

The datasheet specifies T_C = 175 °C as the absolute maximum case temperature. For continuous 276 A operation, thermal design must maintain T_C ≤ 25 °C using the specified 40 mm × 40 mm × 1.5 mm FR4 PCB with 6 cm² copper area. Derating curves in Diagram 2 show linear current reduction above 25 °C case temperature.

Does this MOSFET require negative gate drive for reliable turn-off?

No. The device has a gate threshold voltage range of 2.2–3.8 V and is fully compatible with 0 V to 10 V or 0 V to 12 V gate drive. Negative gate bias is not required, though −5 V may be used to improve noise immunity in high-dV/dt environments per application note AN2019-07.

Can the top-side drain pad be electrically connected to the PCB ground plane?

No. The top-side drain pad is electrically identical to the bottom tab and pins 5–8. Connecting it to ground creates a short circuit. It must be either left floating or connected to the high-voltage drain net via thermal interface material and heatsink-never to any other potential.

Is the body diode suitable for reverse conduction in synchronous rectification?

Yes. The internal body diode is characterized with t_rr = 32–96 ns and Q_rr = 447–894 nC, and is fully rated for 256 A continuous forward current. Its soft recovery behavior and low stored charge make it suitable for synchronous rectification in LLC and phase-shifted full-bridge topologies up to 100 kHz.

IQD020N10NM5CGSCATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 9-PowerWDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 26A (Ta), 276A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 2.05mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 3.8V @ 159µA

Gate Charge (Qg) (Max) @ Vgs:: 134 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 9500 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 333W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-WHTFN-9-U02

IQD020N10NM5CGSCATMA1 FAQ

1.How can I place an order for IQD020N10NM5CGSCATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IQD020N10NM5CGSCATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IQD020N10NM5CGSCATMA1 reliable?

The price and inventory of IQD020N10NM5CGSCATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IQD020N10NM5CGSCATMA1 is usually 5 days.

3.What payment methods are accepted for IQD020N10NM5CGSCATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IQD020N10NM5CGSCATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IQD020N10NM5CGSCATMA1?

IQD020N10NM5CGSCATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IQD020N10NM5CGSCATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IQD020N10NM5CGSCATMA1?

For technical support, including IQD020N10NM5CGSCATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IQD020N10NM5CGSCATMA1 requirements.

6.How does Aetrix verify that IQD020N10NM5CGSCATMA1 is sourced from the original manufacturer or authorized distributors?

All IQD020N10NM5CGSCATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IQD020N10NM5CGSCATMA1 meets industry standards.

7.What is the process for return or replacement of IQD020N10NM5CGSCATMA1?

All IQD020N10NM5CGSCATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IQD020N10NM5CGSCATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IQD020N10NM5CGSCATMA1 part is unused and in its original packaging.

Return procedure for IQD020N10NM5CGSCATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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