Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IQD020N10NM5SCATMA1

Name: IQD020N10NM5SCATMA1
Brand: Infineon Technologies
SKU: IQD020N10NM5SCATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IQD020N10NM5SCATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerWDFN

Datasheet:: IQD020N10NM5SCATMA1.pdf

Description:: OPTIMOS POWER MOSFETS 25 V - 150

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:8,430

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IQD020N10NM5SCATMA1 from Infineon is an N-channel enhancement-mode MOSFET in the OptiMOS™ 5 family, rated for 100 V drain-source voltage, 2.05 mΩ maximum R_DS(on) at V_GS = 10 V, 276 A continuous drain current, and housed in a PG-WHSON-8 package with bottom-side thermal pad. It serves as a high-efficiency power switch in synchronous buck converters for server VRMs and telecom DC-DC modules.

For engineers reviewing the IQD020N10NM5SCATMA1 datasheet, IQD020N10NM5SCATMA1 pinout, IQD020N10NM5SCATMA1 application, or IQD020N10NM5SCATMA1 equivalent, key selection criteria include R_DS(on), Q_g/Q_oss ratio, double-side cooling capability, avalanche ruggedness, and JEDEC industrial qualification status.

Technical Context

This device employs trench-gate superjunction technology optimized for low conduction and switching losses in high-frequency, high-current DC-DC conversion. Its 0.45 °C/W junction-to-case (bottom) thermal resistance enables direct thermal coupling to heatsinks or PCB copper layers on both top and bottom surfaces.

The gate charge profile shows a 4.4 V plateau voltage and 107 nC total gate charge (Q_g) at V_DS = 50 V, I_D = 50 A, supporting fast, low-loss switching in hard-switched topologies. The integrated body diode exhibits 0.82–1.0 V forward voltage and 48–96 ns reverse recovery time under defined dI/dt conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage for 48 V input bus systems with safety margin
R_DS(on), max	2.05 mΩ at V_GS = 10 V - Enables <1.4 W conduction loss at 250 A in VRM phase legs
I_D, cont	276 A at T_C = 25 °C - Supports high-current single-phase or paralleled multi-phase designs
Q_g	107 nC - Low gate drive energy requirement compatible with standard gate drivers
R_thJC (bottom)	0.45 °C/W - Allows >300 W power dissipation with 135 °C case temperature rise
E_AS	756 mJ - Single-pulse avalanche energy rating ensures robustness against inductive turn-off transients
Q_oss	125 nC - Low output charge minimizes turn-off loss and improves light-load efficiency

Pinout & Package

Package: PG-WHSON-8 (Power-Grid Wettable Flank, 5 mm × 6 mm × 0.85 mm), thermally enhanced with exposed drain tab on bottom side and wettable flanks for automated optical solder inspection.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Pins 5–8 + Tab)	Main current path from source to load	Tab is electrically connected to internal drain; provides primary thermal path and low-inductance high-current return
Gate (Pin 4)	Control terminal for channel modulation	Isolated high-impedance input requiring <100 nA leakage; sensitive to ESD but robust with proper layout
Source (Pins 1–3)	Reference node for gate drive and current sensing	Multiple pins reduce source inductance and improve Kelvin sensing accuracy in high-dI/dt applications
Internal Body Diode	Parasitic anti-parallel diode	Enables synchronous rectification in buck converters; specified with t_rr = 48–96 ns and Q_rr = 71–142 nC

Key Features

Feature	Design Value
Double-side cooling support	0.45 °C/W (bottom) and 0.56 °C/W (top) thermal resistance enable stacked heatsink or embedded copper thermal vias
100% avalanche tested	Guarantees operation under unclamped inductive switching stress up to 756 mJ without degradation
Optimized for synchronous FET use	Q_g(sync) = 93 nC at V_GS = 0.1 V supports low-voltage gate drive in high-side configurations
Pb-free & halogen-free	RoHS-compliant plating and IEC61249-2-21 compliance ensure environmental and reliability compliance for industrial deployments
JEDEC industrial qualification	Validated per JESD47/22 standards for extended temperature range (−55 °C to +175 °C) and long-term reliability

Applications

Server Voltage Regulator Modules

Telecom 48 V Intermediate Bus Converters

Use Scenario: High-density, multi-phase buck converters delivering 50–200 A at 0.8–1.8 V to CPU/GPU cores.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 300–1000 kHz with tight dead-time control.

Use Value: 2.05 mΩ R_DS(on) reduces conduction loss by >35% vs. legacy 3.5 mΩ devices, enabling higher efficiency at full load.

Use Scenario: Isolated or non-isolated 48 V to 12 V/5 V DC-DC converters in base station power supplies.

IC Role / Device Role / Timing Role: Primary-side high-current switch in hard-switched forward or active-clamp forward topologies.

Use Value: 756 mJ avalanche energy rating eliminates need for external snubbers during transformer reset events.

Industrial Motor Drive Inverters

EV Onboard Charger (OBC) DC-DC Stages

Use Scenario: 3-phase inverter half-bridges driving PMSM/BLDC motors up to 5 kW in HVAC and servo drives.

IC Role / Device Role / Timing Role: Phase-leg low-side switch with integrated body diode conducting freewheeling current during PWM off-time.

Use Value: 0.82 V typical V_SD and 48 ns t_rr minimize diode conduction loss and commutation spikes in 10–20 kHz PWM.

Use Scenario: Secondary-side 400 V to 12 V isolated DC-DC stage in bidirectional OBCs for EV charging.

IC Role / Device Role / Timing Role: Synchronous rectifier in LLC resonant converter output stage operating at 200–500 kHz.

Use Value: 125 nC Q_oss and 107 nC Q_g yield optimal figure-of-merit (Q_g × R_DS(on) = 219 Ω·nC) for high-frequency ZVS operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 100 V MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB020N10N5	Same OptiMOS™ 5 die, identical R_DS(on) and Q_g, but in TO-263-7 package with larger footprint and higher R_thJC (0.55 °C/W)	Limited to single-side cooling; unsuitable for ultra-thin VRM modules requiring bottom-side thermal interface	Select when board space allows and thermal interface is only on top side
STL220N10F7	100 V, 2.2 mΩ R_DS(on), 115 nC Q_g, same PG-WHSON-8 package but lower avalanche rating (E_AS = 450 mJ)	Not fully qualified for industrial temperature cycling; requires derating above 150 °C junction	Select when cost sensitivity outweighs need for full JEDEC industrial validation

Compared with IPB020N10N5 and STL220N10F7, IQD020N10NM5SCATMA1 uniquely combines JEDEC industrial qualification, 0.45 °C/W bottom-side R_thJC, and 756 mJ avalanche energy-making it the preferred choice for mission-critical, space-constrained, high-reliability VRM and telecom power stages.

Availability

IQD020N10NM5SCATMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom intermediate bus converters, and industrial motor drive inverters requiring stable component supply, long lifecycle assurance, and traceable sourcing.

Supply support for IQD020N10NM5SCATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.

This part belongs to the OptiMOS™ 5 Power-Transistor product line, engineered specifically for high-efficiency, high-power-density DC-DC conversion in datacenter, telecom, and industrial power systems.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum junction temperature is 175 °C, and the device is rated for continuous operation up to this limit when case temperature is maintained within specification. Thermal design must account for R_thJC = 0.45 °C/W (bottom) and ensure sufficient copper area and airflow to sustain T_C ≤ 135 °C at full 276 A load.

Does this MOSFET support double-sided PCB cooling?

Yes-its PG-WHSON-8 package features an exposed drain tab on the bottom and a thermally accessible top surface, enabling simultaneous heat extraction from both sides. This is validated by separate R_thJC values: 0.45 °C/W (bottom) and 0.56 °C/W (top), supporting stacked heatsink or embedded thermal via architectures.

Is the body diode suitable for synchronous rectification?

Yes-the integrated body diode is characterized with V_SD = 0.82 V (typ) at 50 A and t_rr = 48 ns (typ) at dI/dt = 100 A/μs, making it viable for synchronous rectification in buck converters up to ~1 MHz. However, external Schottky diodes may still be preferred for ultra-low V_F in light-load optimization.

What is the gate threshold voltage range and its impact on drive circuitry?

V_GS(th) is specified from 2.2 V to 3.8 V at I_D = 159 μA. This relatively narrow range ensures consistent turn-on behavior across temperature and process variation. Gate drive must supply ≥4.4 V plateau voltage to achieve full enhancement, and logic-level drivers (3.3 V) are insufficient for rated R_DS(on).

IQD020N10NM5SCATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 8-PowerWDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 26A (Ta), 276A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 2.05mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 3.8V @ 159µA

Gate Charge (Qg) (Max) @ Vgs:: 134 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 9500 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 333W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-WHSON-8-U02

IQD020N10NM5SCATMA1 FAQ

1.How can I place an order for IQD020N10NM5SCATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IQD020N10NM5SCATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IQD020N10NM5SCATMA1 reliable?

The price and inventory of IQD020N10NM5SCATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IQD020N10NM5SCATMA1 is usually 5 days.

3.What payment methods are accepted for IQD020N10NM5SCATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IQD020N10NM5SCATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IQD020N10NM5SCATMA1?

IQD020N10NM5SCATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IQD020N10NM5SCATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IQD020N10NM5SCATMA1?

For technical support, including IQD020N10NM5SCATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IQD020N10NM5SCATMA1 requirements.

6.How does Aetrix verify that IQD020N10NM5SCATMA1 is sourced from the original manufacturer or authorized distributors?

All IQD020N10NM5SCATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IQD020N10NM5SCATMA1 meets industry standards.

7.What is the process for return or replacement of IQD020N10NM5SCATMA1?

All IQD020N10NM5SCATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IQD020N10NM5SCATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IQD020N10NM5SCATMA1 part is unused and in its original packaging.

Return procedure for IQD020N10NM5SCATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.