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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IQD063N15NM5SCATMA1

Name: IQD063N15NM5SCATMA1
Brand: Infineon Technologies
SKU: IQD063N15NM5SCATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IQD063N15NM5SCATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerWDFN

Datasheet:: IQD063N15NM5SCATMA1.pdf

Description:: OPTIMOS POWER MOSFETS 25 V - 150

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Product details

Overview

IQD063N15NM5SCATMA1 from Infineon is an N-channel enhancement-mode MOSFET in the OptiMOS™ 5 family, rated for 150 V drain-source voltage, 6.32 mΩ maximum R_DS(on) at V_GS = 10 V, 151 A continuous drain current, and housed in a PG-WHSON-8 package with double-side cooling capability. It serves as a high-efficiency power switch in industrial DC-DC converters and motor drives requiring low conduction loss and robust avalanche ruggedness.

For engineers reviewing the IQD063N15NM5SCATMA1 datasheet, IQD063N15NM5SCATMA1 pinout, IQD063N15NM5SCATMA1 application, or IQD063N15NM5SCATMA1 equivalent, key selection criteria include its 0.45 °C/W junction-to-case (bottom) thermal resistance, 48 nC total gate charge, 136 nC output charge, 150 V blocking rating, and JEDEC-qualified industrial reliability.

Technical Context

This device employs trench-based silicon technology optimized for high-current, medium-voltage switching in synchronous rectification and half-bridge topologies. Its gate plateau voltage of 5.6 V enables stable turn-on under varying drive conditions, while its low Q_rr (55–390 nC) and fast t_rr (26–98 ns) reduce diode recovery losses in hard-switched applications.

The PG-WHSON-8 package integrates exposed drain pads on both top and bottom surfaces to support dual thermal paths-critical for high-power-density designs where PCB copper area is constrained. Its 100% avalanche-tested construction ensures single-pulse energy handling up to 300 mJ at I_D = 50 A.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - Maximum blocking voltage for industrial 100–125 V bus systems
R_DS(on),max	6.32 mΩ at V_GS = 10 V - Enables ≤0.5 W conduction loss at 100 A
I_D,cont	151 A at T_C = 25 °C - Supports high-current output stages without parallel devices
Q_g,total	48 nC - Determines gate driver power requirement and switching speed trade-off
Q_oss	136 nC - Directly impacts turn-off energy and snubber design in hard-switched converters
R_thJC,bottom	0.45 °C/W - Enables >300 W power dissipation with moderate heatsinking on PCB bottom side
E_AS	300 mJ - Guarantees safe operation during inductive load switching transients

Pinout & Package

Package: PG-WHSON-8 (exposed drain pad on top and bottom, no leads, 5 mm × 6 mm footprint).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Pins 5–8)	High-current power terminal	Internally connected to top and bottom exposed metal pads; primary heat path and main current return
Gate (Pin 4)	Control input	Low-impedance MOS gate requiring <1 µA leakage; sensitive to ESD; connects to driver IC output
Source (Pins 1–3)	Reference node	Common return for gate drive and load current; ties to PCB source copper pour for low-inductance layout
Internal body diode	Integrated freewheeling path	Enables bidirectional current flow during dead-time; V_F = 0.83–1.0 V at 50 A supports efficient synchronous rectification

Key Features

Feature	Design Value
Double-side cooling architecture	Simultaneous thermal extraction via top and bottom drain pads reduces junction temperature rise by ≥30% vs. single-side packages
Optimized Q_g/R_DS(on) ratio	48 nC gate charge per 6.32 mΩ delivers superior figure-of-merit (FOM) for 150 V class in high-frequency SMPS
100% avalanche tested	Each unit validated for 300 mJ single-pulse energy-eliminates need for external clamping in inductive switching
Low Q_rr and fast t_rr	55–390 nC reverse recovery charge with 26–98 ns recovery time minimizes cross-conduction loss in synchronous FETs

Applications

Industrial Motor Drives

Server PSU Half-Bridge

Use Scenario: 3-phase inverter stage in 5–15 kW servo drives operating at 16 kHz PWM frequency.

IC Role / Device Role / Timing Role: High-side and low-side switching element in IGBT/MOSFET hybrid or all-MOSFET bridge configurations.

Use Value: 0.45 °C/W R_thJC allows direct mounting to heatsink without thermal interface material; 151 A rating eliminates paralleling in most sub-10 kW designs.

Use Scenario: Primary-side synchronous rectifier in 3.3 kW server power supply with LLC resonant topology.

IC Role / Device Role / Timing Role: Secondary-side synchronous FET replacing Schottky diodes to improve efficiency above 500 kHz switching.

Use Value: 136 nC Q_oss and 48 nC Q_g enable low-loss turn-off with minimal voltage overshoot; 150 V rating covers reflected transients in 12 V output rails.

Solar Microinverters

EV On-Board Charger (OBC)

Use Scenario: Full-bridge DC-AC stage in single-phase 300–600 W microinverters interfacing with 60–100 V PV strings.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge inverter with unidirectional current flow and bidirectional voltage blocking.

Use Value: 6.32 mΩ R_DS(on) limits conduction loss to <0.6 W at 80 A peak; JEDEC industrial qualification ensures 25-year field reliability.

Use Scenario: Isolated DC-DC stage in 6.6 kW OBC converting 400 V battery to 400 V HV auxiliary rail.

IC Role / Device Role / Timing Role: High-efficiency switching transistor in phase-shifted full-bridge topology operating at 100–200 kHz.

Use Value: Double-side cooling accommodates compact aluminum heatsink integration; 300 mJ E_AS withstands fault currents during short-circuit events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 150 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N15F7AG	R_DS(on),max = 6.5 mΩ; Q_g = 52 nC; PG-HSOF-8 package with single-side cooling only	Lacks double-side thermal path; higher R_thJC (0.75 °C/W) limits power density in space-constrained OBC modules	Preferable where cost sensitivity outweighs thermal performance; requires larger heatsink area
IXTH120N15X4	R_DS(on),max = 6.0 mΩ; Q_g = 92 nC; TO-247 package with higher parasitic inductance	Higher gate charge increases driver loss; through-hole mounting incompatible with ultra-thin server PSU form factors	Preferred for high-reliability industrial inverters where board-level vibration resistance is critical

Compared with STL220N15F7AG and IXTH120N15X4, IQD063N15NM5SCATMA1 delivers the lowest thermal resistance and best gate-charge-to-R_DS(on) balance-making it optimal for high-power-density, surface-mount applications demanding both efficiency and compactness.

Availability

IQD063N15NM5SCATMA1 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, solar microinverters, and EV on-board chargers requiring stable component supply across multi-year production cycles.

Supply support for IQD063N15NM5SCATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The OptiMOS™ 5 product line targets high-efficiency, high-current power conversion in industrial and computing applications-designed specifically for reduced conduction and switching losses in 48–150 V systems using advanced trench MOSFET process technology.

FAQ

What is the maximum allowable case temperature for continuous operation?

The datasheet specifies a maximum storage and operating temperature of 175 °C, but continuous operation at that limit requires derating based on actual thermal resistance. At T_C = 100 °C, the device supports 101 A continuous drain current (per Table 2). For reliable long-term operation, Infineon recommends maintaining T_C ≤ 125 °C using the provided R_thJC values and appropriate PCB copper area or heatsink interface.

Does this MOSFET require a negative gate voltage for safe turn-off?

No. The IQD063N15NM5SCATMA1 has a gate threshold voltage range of 3.0–4.6 V and is specified for normal-level (not logic-level) drive. Turn-off is fully assured at V_GS = 0 V; applying –5 V is unnecessary and not recommended. Gate-source voltage must remain within –20 V to +20 V per absolute maximum ratings to avoid oxide damage.

Can this device be used in synchronous rectification mode with zero-voltage switching?

Yes. Its low Q_rr (55–390 nC), fast t_rr (26–98 ns), and low Q_oss (136–181 nC) make it well-suited for ZVS and quasi-resonant topologies. The internal body diode's soft recovery behavior-verified by reverse recovery charge testing-reduces ringing and EMI when used as a synchronous rectifier in LLC or phase-shifted full-bridge converters.

Is the PG-WHSON-8 package compatible with standard reflow soldering profiles?

Yes. The package is qualified for lead-free reflow per J-STD-020, with a peak temperature of 260 °C for ≤30 seconds. Its moisture sensitivity level (MSL) is 1, meaning unlimited floor life at ≤30 °C/60% RH. Recommended profile includes ramp-up ≤3 °C/s, preheat 150–200 °C for 90–120 s, and time above liquidus (217 °C) of 60–90 s.

IQD063N15NM5SCATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 8-PowerWDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 14.4A (Ta), 151A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 8V, 10V

Rds On (Max) @ Id, Vgs:: 6.32mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 4.6V @ 159µA

Gate Charge (Qg) (Max) @ Vgs:: 60 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4700 pF @ 75 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 333W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-WHSON-8-U02

IQD063N15NM5SCATMA1 FAQ

1.How can I place an order for IQD063N15NM5SCATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IQD063N15NM5SCATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IQD063N15NM5SCATMA1 reliable?

The price and inventory of IQD063N15NM5SCATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IQD063N15NM5SCATMA1 is usually 5 days.

3.What payment methods are accepted for IQD063N15NM5SCATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IQD063N15NM5SCATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IQD063N15NM5SCATMA1?

IQD063N15NM5SCATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IQD063N15NM5SCATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IQD063N15NM5SCATMA1?

For technical support, including IQD063N15NM5SCATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IQD063N15NM5SCATMA1 requirements.

6.How does Aetrix verify that IQD063N15NM5SCATMA1 is sourced from the original manufacturer or authorized distributors?

All IQD063N15NM5SCATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IQD063N15NM5SCATMA1 meets industry standards.

7.What is the process for return or replacement of IQD063N15NM5SCATMA1?

All IQD063N15NM5SCATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IQD063N15NM5SCATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IQD063N15NM5SCATMA1 part is unused and in its original packaging.

Return procedure for IQD063N15NM5SCATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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