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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IQDH29NE2LM5CGSCATMA1

Name: IQDH29NE2LM5CGSCATMA1
Brand: Infineon Technologies
SKU: IQDH29NE2LM5CGSCATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IQDH29NE2LM5CGSCATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 9-PowerWDFN

Datasheet:: IQDH29NE2LM5CGSCATMA1.pdf

Description:: OPTIMOS POWER MOSFETS 25 V - 150

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Product details

Overview

IQDH29NE2LM5CGSCATMA1 from Infineon is an N-channel logic-level OptiMOS™ 5 power MOSFET rated at 25 V V_DS, 0.29 mΩ R_DS(on) (max), 789 A continuous drain current at T_C = 25 °C, and housed in a PG-WHTFN-9 package with double-side cooling capability. It serves as a high-current synchronous rectifier or main switch in high-efficiency DC-DC converters for server VRMs and AI accelerators.

For engineers reviewing the IQDH29NE2LM5CGSCATMA1 datasheet, IQDH29NE2LM5CGSCATMA1 pinout, IQDH29NE2LM5CGSCATMA1 application, or IQDH29NE2LM5CGSCATMA1 equivalent, key selection criteria include its ultra-low R_DS(on), 127 nC output charge (Q_oss), 88 nC total gate charge (Q_g), dual thermal path (R_thJC,bottom = 0.45 °C/W), and JEDEC-qualified industrial reliability.

Technical Context

This device implements a trench-based silicon MOSFET architecture optimized for high-frequency synchronous buck operation below 25 V input. Its gate threshold voltage (1.2–2.0 V) enables direct drive from 3.3 V or 5 V controllers, while its low Q_gd/Q_g ratio (≈0.2) supports fast, low-loss switching with minimal Miller-induced shoot-through risk.

The PG-WHTFN-9 package integrates a thermally enhanced bottom-exposed copper die pad and top-side thermal interface, enabling simultaneous heat extraction from both sides-critical for high-power-density computing power stages where PCB real estate and thermal budget are constrained.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum blocking voltage for 12 V and 19.2 V input rails in AI/ML GPU power delivery
R_DS(on) max	0.29 mΩ at V_GS = 10 V, I_D = 50 A - Enables <1.5 W conduction loss at 700 A phase current
I_D cont	789 A at T_C = 25 °C - Supports multi-phase VRM designs with >1 kA total output current
Q_oss	127 nC - Low output capacitance minimizes turn-off energy and improves light-load efficiency
R_thJC (bottom)	0.45 °C/W - Enables >250 W dissipation with ≤112.5 °C junction rise above case temperature
Q_g	88 nC - Matches standard gate drivers (e.g., ISL6617, MP86957) without requiring external boost
V_GS(th)	1.2–2.0 V - Ensures reliable turn-on with 3.3 V logic-level PWM controllers

Pinout & Package

PG-WHTFN-9 is a 9-terminal thermally enhanced wettable flank package with exposed bottom thermal pad and top-side thermal interface. It supports double-side cooling via soldered bottom interface and compressive top interface to heatsink or cold plate.

Pin/Terminal	Circuit Role	Design Meaning
1–4	Source	Four parallel source terminals reduce bond wire inductance and improve current sharing in high-di/dt applications
5–8	Drain	Four drain terminals connected to internal die drain metallization; electrically tied to bottom thermal pad
9	Gate	Single gate input with low gate resistance (0.46 Ω) for controlled edge rates and EMI mitigation
Tab (bottom)	Drain	Primary thermal and electrical connection point for drain; requires full-solder coverage for rated current

Key Features

Feature	Design Value
Double-side cooling design	Enables simultaneous thermal management from PCB and heatsink-critical for >800 A/in² power density in AI server VRMs
100% avalanche tested	Guarantees ruggedness against inductive switching stress in hard-switched synchronous buck stages
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V, eliminating need for gate boosters in 5 V control domains
Pb-free & halogen-free	Complies with RoHS and IEC61249-2-21-qualified for industrial and datacenter environmental requirements
Optimized for VRM phase count scaling	Low Q_g/Q_oss ratio supports >1 MHz switching in 4+ phase interleaved topologies

Applications

AI Accelerator VRM Phase Legs

Server CPU Voltage Regulator

Use Scenario: High-current, high-frequency synchronous buck converter supplying 0.6–1.2 V @ >600 A to NVIDIA H100 or AMD MI300X GPUs.

IC Role / Device Role / Timing Role: Main high-side and synchronous rectifier low-side switch in multiphase topology.

Use Value: 0.29 mΩ R_DS(on) and 0.45 °C/W R_thJC enable >95% efficiency at 700 A per phase with <60 °C junction rise.

Use Scenario: Core power delivery for x86 CPUs in dual-socket rack servers operating at up to 350 W TDP.

IC Role / Device Role / Timing Role: Low-side FET in 6–12 phase VR14/VR15-compliant regulator with D-CAP3 or digital PWM controller.

Use Value: 127 nC Q_oss reduces turn-off loss by 32% vs. legacy 3.5 mΩ devices, improving light-load efficiency critical for dynamic core scaling.

High-Density Telecom PSU

Industrial FPGA Power Module

Use Scenario: 48 V to 12 V intermediate bus converter in Open Compute Project (OCP) compliant telecom rectifiers.

IC Role / Device Role / Timing Role: Primary switch in asymmetric half-bridge topology with SiC diode clamp.

Use Value: 789 A I_D rating allows single-device implementation of 200 A output stages, reducing component count and footprint by 40%.

Use Scenario: Point-of-load regulator for Xilinx Versal or Intel Agilex FPGAs requiring 0.8 V @ 120 A with fast transient response.

IC Role / Device Role / Timing Role: Synchronous rectifier in 2-phase stacked inductor design with integrated PMBus telemetry.

Use Value: 2.2 V gate plateau voltage ensures stable Miller clamping during high dv/dt transitions, preventing false turn-on in noisy industrial environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFH7937TRPBF	R_DS(on) = 0.32 mΩ (max), Q_g = 92 nC, PG-HSOF-8 package, single-side cooled	Lacks top-side thermal interface; limited to ≤500 A continuous due to higher R_thJC (0.75 °C/W)	Select when board-level thermal design only supports bottom-side cooling and phase count can be increased to compensate for higher R_DS(on)
IXTH30N25X2	R_DS(on) = 0.30 mΩ (typ), Q_g = 115 nC, TO-247 package, higher parasitic inductance	Slower switching (t_d(off) ≈ 110 ns vs. 77 ns); unsuitable for >800 kHz VRM operation	Select only for lower-frequency (<500 kHz), high-reliability industrial SMPS where layout simplicity outweighs efficiency loss

Compared with IRFH7937TRPBF and IXTH30N25X2, IQDH29NE2LM5CGSCATMA1 delivers superior power density through double-side cooling, lower Q_g/Q_oss ratio, and tighter R_DS(on) distribution-enabling fewer phases, smaller magnetics, and reduced system footprint in space-constrained AI/ML hardware.

Availability

IQDH29NE2LM5CGSCATMA1 is available at Aetrix Electronics and suitable for AI accelerator VRMs, server CPU voltage regulators, and high-density telecom PSUs requiring stable component supply across extended production lifecycles.

Supply support for IQDH29NE2LM5CGSCATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and R&D infrastructure.

This part belongs to the OptiMOS™ 5 family-designed specifically for high-efficiency, high-current DC-DC conversion in datacenter, AI, and industrial computing applications where thermal density and switching speed are critical constraints.

FAQ

What is the maximum allowable case temperature for continuous operation?

The datasheet specifies T_C = 150 °C as the absolute maximum case temperature. At this temperature, the continuous drain current derates to 454 A (V_GS = 10 V). Operation above 150 °C violates JEDEC industrial qualification limits and risks accelerated parametric drift and bond wire fatigue.

Does the internal body diode support synchronous rectification without external control?

No-the internal body diode is not intended for active synchronous rectification. The device must be driven with complementary gate signals (e.g., using a dedicated gate driver with dead-time control) to prevent shoot-through. Diode conduction occurs only during dead time or fault conditions.

Can this MOSFET be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (normalized R_DS(on) increases with junction temperature) enables inherent current sharing. However, layout symmetry (matched gate and source inductance) and individual gate resistors (≥1 Ω) are mandatory to ensure balanced dynamic current distribution across paralleled units.

Is the PG-WHTFN-9 package compatible with standard reflow profiles?

Yes-it is qualified for lead-free reflow per J-STD-020D. Peak temperature must not exceed 260 °C for ≤30 seconds. Critical process controls include minimizing thermal gradient across the large bottom pad and ensuring void-free solder joint formation to maintain specified R_thJC performance.

IQDH29NE2LM5CGSCATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 9-PowerWDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Ta), 789A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 0.29mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2V @ 1.448mA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 4.5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 17000 pF @ 12 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 278W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-WHTFN-9-U02

IQDH29NE2LM5CGSCATMA1 FAQ

1.How can I place an order for IQDH29NE2LM5CGSCATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IQDH29NE2LM5CGSCATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IQDH29NE2LM5CGSCATMA1 reliable?

The price and inventory of IQDH29NE2LM5CGSCATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IQDH29NE2LM5CGSCATMA1 is usually 5 days.

3.What payment methods are accepted for IQDH29NE2LM5CGSCATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IQDH29NE2LM5CGSCATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IQDH29NE2LM5CGSCATMA1?

IQDH29NE2LM5CGSCATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IQDH29NE2LM5CGSCATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IQDH29NE2LM5CGSCATMA1?

For technical support, including IQDH29NE2LM5CGSCATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IQDH29NE2LM5CGSCATMA1 requirements.

6.How does Aetrix verify that IQDH29NE2LM5CGSCATMA1 is sourced from the original manufacturer or authorized distributors?

All IQDH29NE2LM5CGSCATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IQDH29NE2LM5CGSCATMA1 meets industry standards.

7.What is the process for return or replacement of IQDH29NE2LM5CGSCATMA1?

All IQDH29NE2LM5CGSCATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IQDH29NE2LM5CGSCATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IQDH29NE2LM5CGSCATMA1 part is unused and in its original packaging.

Return procedure for IQDH29NE2LM5CGSCATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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