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Infineon Technologies IQDH29NE2LM5SCATMA1
- Part No.:
- IQDH29NE2LM5SCATMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerWDFN
- Datasheet:
-
IQDH29NE2LM5SCATMA1.pdf
- Description:
- OPTIMOS POWER MOSFETS 25 V - 150
- Quantity:
- Payment:
- Shipping:
Inventory:8,526
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Product details
Overview
IQDH29NE2LM5SCATMA1 from Infineon is an N-channel logic-level OptiMOS™ 5 power MOSFET rated for 25 V drain-source voltage, 0.29 mΩ typical RDS(on) at VGS = 10 V, 789 A continuous drain current at TC = 25 °C, and optimized for double-side cooling in high-current DC-DC converters and motor drives.
For engineers reviewing the IQDH29NE2LM5SCATMA1 datasheet, IQDH29NE2LM5SCATMA1 pinout, IQDH29NE2LM5SCATMA1 application, or IQDH29NE2LM5SCATMA1 equivalent, key selection criteria include its ultra-low RDS(on), 127 nC output charge (Qoss), 0.45 °C/W junction-to-case thermal resistance (bottom side), JEDEC-qualified industrial reliability, and PG-WHSON-8 package with exposed drain tab.
Technical Context
This device implements a trench-based silicon MOSFET architecture with optimized cell pitch and deep-trench gate structure to achieve sub-0.3 mΩ on-resistance while maintaining robust avalanche capability (1200 mJ single-pulse). Its logic-level gate threshold (1.2–2.0 V) enables direct drive from 3.3 V or 5 V controllers without level-shifting.
The PG-WHSON-8 package integrates an exposed copper drain pad on the bottom and a dedicated gate terminal (Pin 4), enabling simultaneous top-side signal routing and bottom-side high-current thermal/power path-critical for high-density, double-sided cooled PCB layouts in server VRMs and BLDC inverters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 25 V - Maximum blocking voltage for 12 V and 24 V system rails |
| RDS(on), max | 0.35 mΩ at VGS = 10 V - Enables <1.8 W conduction loss at 750 A |
| ID, cont | 789 A at TC = 25 °C - Supports >700 A phase current in multi-phase synchronous buck stages |
| Qoss | 127 nC - Low output capacitance reduces turn-off switching loss in hard-switched topologies |
| RthJC (bottom) | 0.45 °C/W - Enables >270 W power dissipation with 120 °C ΔT to heatsink |
| Avalanche energy | 1200 mJ - Withstands single-pulse inductive kickback up to 50 A with 25 Ω load |
| VGS(th) | 1.2–2.0 V - Fully enhances with standard 3.3 V GPIO or PWM controller outputs |
Pinout & Package
PG-WHSON-8 package with 5 mm × 6 mm footprint, 0.55 mm height, and exposed drain copper pad on underside for thermal and electrical connection. Pin 1–3 and Pin 5–8 are internally shorted source terminals; Pin 4 is gate; the bottom tab is drain.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1–3, Pin 5–8, Tab | Source (S) | Low-inductance, parallel-connected source terminals minimize common-source inductance in high-di/dt switching |
| Pin 4 | Gate (G) | Dedicated low-impedance gate input with 0.46 Ω internal gate resistance for controlled turn-on/turn-off |
| Bottom tab | Drain (D) | Exposed copper drain pad provides primary thermal path and high-current return path for double-side cooling |
Key Features
| Feature | Design Value |
|---|---|
| Double-side cooling optimization | Separate top-side gate access and bottom-side drain thermal interface enable simultaneous signal routing and high-efficiency heat extraction |
| 100% avalanche tested | Each unit validated for 1200 mJ single-pulse energy - ensures robustness in uncontrolled inductive turn-off events |
| Logic-level gate drive | VGS(th) range 1.2–2.0 V allows direct interfacing with 3.3 V microcontrollers and digital PWM ICs without gate drivers |
| Ultra-low Qg/Qoss ratio | Qg = 88 nC, Qoss = 127 nC - balances switching speed and EMI control in 300–1000 kHz power stages |
Applications
| Server VRM Phase Legs | Industrial BLDC Motor Inverters |
|---|---|
Use Scenario: High-current, multi-phase buck converter supplying CPU/GPU core voltage (0.6–1.2 V) at >600 A per phase. IC Role / Device Role / Timing Role: Synchronous high-side FET in interleaved 3+ phase topology, switching at 500–800 kHz. Use Value: 0.29 mΩ RDS(on) and 0.45 °C/W RthJC reduce conduction loss and enable compact heatsink integration on PCB backside. | Use Scenario: 24 V or 48 V three-phase inverter driving PMSM/BLDC motors in CNC spindles and automated guided vehicles. IC Role / Device Role / Timing Role: Low-side switch in 6-pack inverter module, operating with 10–20 kHz PWM and field-oriented control. Use Value: 789 A ID rating and 127 nC Qoss support high peak currents during torque transients while limiting switching loss. |
| Telecom Rectifier Modules | EV Onboard Charger (OBC) DC-DC Stages |
Use Scenario: Isolated 48 V–12 V step-down converter in telecom shelf power supplies delivering >400 W continuous output. IC Role / Device Role / Timing Role: Primary-side synchronous rectifier in active-clamp forward or LLC resonant converter. Use Value: 25 V VDS rating matches secondary-side voltage stress; low Qoss minimizes reverse recovery loss during zero-voltage switching transitions. | Use Scenario: 400 V–12 V isolated DC-DC stage in bidirectional OBC converting battery power to 12 V auxiliary systems. IC Role / Device Role / Timing Role: Secondary-side synchronous FET in phase-shifted full-bridge topology operating at 100–200 kHz. Use Value: JEDEC industrial qualification and halogen-free construction meet automotive supply chain compliance requirements for OBC modules. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFH5020TRPBF | RDS(on) = 0.42 mΩ @ 10 V; Qoss = 105 nC; PG-HSOF-8 package with top-side drain tab | Higher RDS(on) increases conduction loss by ~45% at 700 A; no double-side cooling support | Select when board layout restricts bottom-side thermal access but lower cost is prioritized over efficiency |
| STL220N4LF8AG | RDS(on) = 0.25 mΩ @ 10 V; Qoss = 158 nC; PowerFLAT 8×8 HV package with dual-side thermal pads | Lower RDS(on) improves conduction loss, but higher Qoss raises turn-off loss in >500 kHz operation | Select for highest efficiency in <300 kHz applications where thermal budget dominates switching loss |
Compared with IRFH5020TRPBF and STL220N4LF8AG, IQDH29NE2LM5SCATMA1 delivers optimal balance of ultra-low RDS(on), moderate Qoss, and double-side cooling-making it preferred for high-frequency, high-current server and industrial motor drive designs requiring both power density and thermal headroom.
Availability
IQDH29NE2LM5SCATMA1 is available at Aetrix Electronics and suitable for server VRM phase legs, industrial BLDC motor inverters, telecom rectifier modules, and EV onboard charger DC-DC stages requiring stable component supply and long-term industrial qualification.
Supply support for IQDH29NE2LM5SCATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.
This part belongs to the OptiMOS™ 5 family-designed specifically for high-efficiency, high-current power conversion in datacenter, industrial automation, and e-mobility applications where thermal performance and reliability under sustained overload are critical.
FAQ
What is the maximum allowable case temperature for continuous operation?
The datasheet specifies TC = 150 °C as the absolute maximum case temperature. At this temperature, the continuous drain current derates to 454 A (VGS = 10 V). Operation above 150 °C violates JEDEC industrial qualification limits and risks irreversible parametric shift or bond-wire failure.
Is the internal body diode suitable for synchronous rectification?
Yes-the integrated body diode has trr = 59 ns (typ.) and Qrr = 120 nC (typ.) at 25 °C, making it viable for synchronous rectification in non-resonant topologies up to 300 kHz. However, external Schottky diodes are recommended for >400 kHz operation due to Qrr sensitivity to junction temperature.
How is the PG-WHSON-8 package mounted for double-side cooling?
The package requires soldering the exposed drain tab to a large copper area on the PCB bottom layer (≥6 cm²), while mounting a heatsink or thermal pad directly to that same copper area. Simultaneously, the top-side pins are routed to gate drivers and source connections-enabling independent thermal paths for drain (bottom) and source/gate (top).
Does this MOSFET require a negative gate voltage for reliable turn-off?
No-its gate threshold voltage (1.2–2.0 V) and gate plateau voltage (2.2 V typ.) ensure full depletion at 0 V gate bias. A negative gate voltage is not required; however, applying –2 V to –5 V during turn-off can improve noise immunity in high-dV/dt environments such as motor drives with fast IGBT switching.
IQDH29NE2LM5SCATMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™ 5
- Package/Case:
- 8-PowerWDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 25 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Ta), 789A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 0.29mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 1.448mA
- Gate Charge (Qg) (Max) @ Vgs:
- 110 nC @ 4.5 V
- Vgs (Max):
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 17000 pF @ 12 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 278W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-WHSON-8-U02
IQDH29NE2LM5SCATMA1 FAQ
1.How can I place an order for IQDH29NE2LM5SCATMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IQDH29NE2LM5SCATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IQDH29NE2LM5SCATMA1 reliable?
The price and inventory of IQDH29NE2LM5SCATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IQDH29NE2LM5SCATMA1 is usually 5 days.
3.What payment methods are accepted for IQDH29NE2LM5SCATMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IQDH29NE2LM5SCATMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IQDH29NE2LM5SCATMA1?
IQDH29NE2LM5SCATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IQDH29NE2LM5SCATMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IQDH29NE2LM5SCATMA1?
For technical support, including IQDH29NE2LM5SCATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IQDH29NE2LM5SCATMA1 requirements.
6.How does Aetrix verify that IQDH29NE2LM5SCATMA1 is sourced from the original manufacturer or authorized distributors?
All IQDH29NE2LM5SCATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IQDH29NE2LM5SCATMA1 meets industry standards.
7.What is the process for return or replacement of IQDH29NE2LM5SCATMA1?
All IQDH29NE2LM5SCATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IQDH29NE2LM5SCATMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IQDH29NE2LM5SCATMA1 part is unused and in its original packaging.
Return procedure for IQDH29NE2LM5SCATMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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