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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IQDH35N03LM5CGSCATMA1

Name: IQDH35N03LM5CGSCATMA1
Brand: Infineon Technologies
SKU: IQDH35N03LM5CGSCATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IQDH35N03LM5CGSCATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 9-PowerWDFN

Datasheet:: IQDH35N03LM5CGSCATMA1.pdf

Description:: OPTIMOS POWER MOSFETS 25 V - 150

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Product details

Overview

IQDH35N03LM5CGSCATMA1 from Infineon is an N-channel logic-level OptiMOS™ 5 power MOSFET rated at 30 V, with a maximum R_DS(on) of 0.35 mΩ at V_GS = 10 V, 700 A continuous drain current (T_C = 25 °C), and PG-WHTFN-9 package optimized for double-side cooling in high-current DC/DC converters and motor drives.

For engineers reviewing the IQDH35N03LM5CGSCATMA1 datasheet, IQDH35N03LM5CGSCATMA1 pinout, IQDH35N03LM5CGSCATMA1 application, or IQDH35N03LM5CGSCATMA1 equivalent, key selection criteria include ultra-low on-resistance, 100% avalanche-tested ruggedness, dual thermal path capability, and gate charge profile suited for synchronous rectification and high-frequency switching topologies.

Technical Context

This device implements a trench-based silicon MOSFET architecture with optimized cell pitch and deep-trench gate structure to achieve sub-0.4 mΩ R_DS(on) while maintaining low Q_g (91 nC typical) and Q_gd (18–27 nC). Its dual-sided thermal interface enables simultaneous heat extraction from both top and bottom surfaces.

The integrated body diode exhibits t_rr = 49–98 ns (V_DD = 15 V, I_F = 25 A) and Q_rr = 64–128 nC, supporting efficient hard-switched and synchronous FET operation in buck, half-bridge, and multiphase VRMs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 24 V nominal bus systems with margin for transients
R_DS(on), max	0.35 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 700 A, critical for high-efficiency power stages
I_D, cont	700 A @ T_C = 25 °C - Supports single-device implementation in server VRMs and industrial inverters
Q_g, total	91 nC - Low gate drive energy reduces driver losses and simplifies gate driver selection
R_thJC, bottom	0.45 °C/W - Enables >250 W dissipation with 112.5 °C ΔT across junction-to-case (bottom)
Avalanche energy	1200 mJ - Withstands single-pulse inductive turn-off events without failure
Package	PG-WHTFN-9 - Exposed top and bottom copper pads support double-side cooling on PCBs

Pinout & Package

PG-WHTFN-9 is a 9-terminal thermally enhanced thin-wafer package with exposed top and bottom copper thermal pads. It supports double-side cooling via soldered interfaces to both PCB layers and heatsinks.

Pin/Terminal	Circuit Role	Design Meaning
1–4	Source	Low-inductance parallel source connection; tied internally to bottom thermal pad
5–8	Drain	High-current drain node connected to top thermal pad; forms primary current path
9	Gate	Control terminal with 0.47 Ω internal gate resistance; requires low-impedance drive
Tab (top)	Drain	Exposed copper area electrically and thermally connected to pins 5–8
Tab (bottom)	Source	Exposed copper area electrically and thermally connected to pins 1–4

Key Features

Feature	Design Value
Double-side cooling interface	Simultaneous thermal extraction from top (drain) and bottom (source) pads reduces total R_thJA by up to 40% vs. standard SO-8
100% avalanche tested	Guarantees robustness against inductive switching stress without derating
Logic-level gate drive	V_GS(th) = 1.2–2.0 V enables direct drive from 3.3 V or 5 V controllers without level-shifting
Pb-free & halogen-free	Complies with RoHS and IEC61249-2-21; suitable for automotive and industrial end-equipment
Optimized Q_gd/Q_g ratio	Q_gd = 18–27 nC / Q_g = 91 nC improves Miller immunity and dV/dt ruggedness

Applications

Server Voltage Regulator Modules

Industrial Motor Drives

Use Scenario: High-density 48 V input → 0.8 V/500 A output VRM in AI accelerators and CPU power delivery.

IC Role / Device Role / Timing Role: Synchronous high-side FET in multiphase buck converter; switched at 500–1000 kHz.

Use Value: 0.35 mΩ R_DS(on) cuts conduction loss by >35% vs. legacy 0.6 mΩ devices, enabling higher power density without forced air.

Use Scenario: 24–48 V BLDC inverter for servo drives and robotic joints requiring peak currents >400 A.

IC Role / Device Role / Timing Role: Low-side switching element in three-phase inverter leg; operated in hard-switched PWM mode.

Use Value: 1200 mJ avalanche rating ensures reliable commutation during short-circuit fault conditions without external snubbers.

Telecom DC/DC Converters

EV Onboard Chargers (OBC)

Use Scenario: 48 V intermediate bus converter delivering 12 V/100 A to baseband processing units.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology; gated at 200–400 kHz.

Use Value: Dual thermal interface allows mounting on both primary and secondary side PCBs, reducing overall thermal stack-up and improving reliability.

Use Scenario: Secondary-side synchronous rectifier in 3.3 kW AC/DC stage of bidirectional OBC.

IC Role / Device Role / Timing Role: Low-V_DS rectifying FET replacing Schottky diodes in LLC resonant converter output stage.

Use Value: 0.72 V typ. body diode V_SD and fast t_rr (49 ns) minimize reverse recovery loss and EMI generation during zero-voltage switching transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB033N03L3	R_DS(on) = 0.33 mΩ (typ), same 30 V rating, but PG-HSOF-8 package with single-side cooling only	Lacks top-side thermal interface; unsuitable where double-side cooling is required for thermal budget	Select when board layout restricts top-side heatsinking and lower cost is prioritized over thermal headroom
IRFH5020TRPBF	R_DS(on) = 0.42 mΩ (max), 30 V, PQFN 5×6 mm, no avalanche rating specified	No JEDEC-qualified avalanche testing; limited to non-fault-tolerant applications	Choose only for cost-sensitive consumer-grade DC/DC where fault robustness is not mandated

Compared with IPB033N03L3 and IRFH5020TRPBF, IQDH35N03LM5CGSCATMA1 delivers superior thermal management via dual thermal paths and guaranteed avalanche ruggedness-critical for industrial and telecom systems where field reliability and long-term stability under transient stress are mandatory.

Availability

IQDH35N03LM5CGSCATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, and telecom DC/DC converters requiring stable component supply, high-current handling, and JEDEC-qualified industrial reliability.

Supply support for IQDH35N03LM5CGSCATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and security ICs, with global manufacturing and R&D infrastructure.

This device belongs to the OptiMOS™ 5 product line-designed specifically for high-efficiency, high-current power conversion in datacenter, industrial, and e-mobility applications where low R_DS(on), fast switching, and thermal resilience are essential.

FAQ

What is the maximum allowable case temperature for continuous operation?

The datasheet specifies T_C = 150 °C as the absolute maximum case temperature. At this temperature, the continuous drain current is derated to 414 A (V_GS = 10 V). Thermal design must ensure junction temperature remains ≤175 °C using the given R_thJC values and actual cooling conditions.

Does IQDH35N03LM5CGSCATMA1 support gate drive from 3.3 V logic?

Yes-its logic-level gate threshold (V_GS(th) = 1.2–2.0 V) and low R_DS(on) at V_GS = 4.5 V (0.36 mΩ max) enable functional switching with 3.3 V gate drive, though conduction loss increases ~15% versus 10 V drive; gate drive strength must exceed 2 A peak to manage 91 nC Q_g.

How is the PG-WHTFN-9 package mounted for double-side cooling?

Mounting requires soldering both top (drain) and bottom (source) copper pads to dedicated PCB copper areas-top pad to a heatsink or secondary layer, bottom pad to primary ground plane. The datasheet recommends 40 mm × 40 mm × 1.5 mm FR4 with 6 cm² 70 μm copper for source-side thermal reference.

Is the body diode suitable for synchronous rectification?

Yes-the body diode has t_rr = 49–98 ns and Q_rr = 64–128 nC at 25 °C, enabling use in synchronous rectification where reverse recovery loss must be minimized. However, external Schottky or GaN FETs may offer lower V_F in ultra-high-efficiency designs.

IQDH35N03LM5CGSCATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 9-PowerWDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 66A (Ta), 700A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 0.35mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2V @ 1.46mA

Gate Charge (Qg) (Max) @ Vgs:: 114 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 18000 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 278W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-WHTFN-9-U02

IQDH35N03LM5CGSCATMA1 FAQ

1.How can I place an order for IQDH35N03LM5CGSCATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IQDH35N03LM5CGSCATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IQDH35N03LM5CGSCATMA1 reliable?

The price and inventory of IQDH35N03LM5CGSCATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IQDH35N03LM5CGSCATMA1 is usually 5 days.

3.What payment methods are accepted for IQDH35N03LM5CGSCATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IQDH35N03LM5CGSCATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IQDH35N03LM5CGSCATMA1?

IQDH35N03LM5CGSCATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IQDH35N03LM5CGSCATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IQDH35N03LM5CGSCATMA1?

For technical support, including IQDH35N03LM5CGSCATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IQDH35N03LM5CGSCATMA1 requirements.

6.How does Aetrix verify that IQDH35N03LM5CGSCATMA1 is sourced from the original manufacturer or authorized distributors?

All IQDH35N03LM5CGSCATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IQDH35N03LM5CGSCATMA1 meets industry standards.

7.What is the process for return or replacement of IQDH35N03LM5CGSCATMA1?

All IQDH35N03LM5CGSCATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IQDH35N03LM5CGSCATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IQDH35N03LM5CGSCATMA1 part is unused and in its original packaging.

Return procedure for IQDH35N03LM5CGSCATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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