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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IQDH35N03LM5SCATMA1

Name: IQDH35N03LM5SCATMA1
Brand: Infineon Technologies
SKU: IQDH35N03LM5SCATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IQDH35N03LM5SCATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerWDFN

Datasheet:: IQDH35N03LM5SCATMA1.pdf

Description:: OPTIMOS POWER MOSFETS 25 V - 150

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Product details

Overview

IQDH35N03LM5SCATMA1 from Infineon is an N-channel logic-level MOSFET in PG-WHSON-8 package, rated for 30 V V_DS, 0.35 mΩ R_DS(on) max at V_GS = 10 V, 700 A continuous drain current, and optimized for double-side cooling in high-current DC-DC converters and motor drives.

For engineers reviewing the IQDH35N03LM5SCATMA1 datasheet, IQDH35N03LM5SCATMA1 pinout, IQDH35N03LM5SCATMA1 application, or IQDH35N03LM5SCATMA1 equivalent, key selection criteria include ultra-low R_DS(on), dual thermal path capability, 91 nC total gate charge, and 100% avalanche-tested ruggedness for industrial power stages.

Technical Context

This OptiMOS™ 5 device uses trench-based silicon technology with enhanced cell density and reduced gate-drain charge (Q_gd = 18–27 nC) to minimize switching losses in synchronous rectification and high-frequency buck converters. Its 0.45 °C/W junction-to-case (bottom) and 0.56 °C/W (top) thermal resistances support bidirectional heat extraction.

The MOSFET features a logic-level gate threshold (V_GS(th) = 1.2–2.0 V), enabling direct drive from 3.3 V/5 V controllers, and integrates a robust body diode with t_rr = 33–98 ns and Q_rr = 64–304 nC for hard-switched topologies requiring fast recovery.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 24 V nominal bus systems with margin against transients.
R_DS(on) max	0.35 mΩ at V_GS = 10 V - Enables <1.8 W conduction loss at 700 A, critical for high-efficiency power delivery.
I_D cont	700 A at T_C = 25 °C - Supports single-device implementation in server VRMs and battery-powered traction inverters.
Q_g total	91 nC at V_GS = 0–10 V - Determines gate driver strength requirement; compatible with standard 2 A peak drivers.
t_r/t_f	5 ns / 14 ns - Enables >1 MHz switching in GaN-complementary half-bridges without excessive EMI.
Z_thJC (bottom)	0.45 °C/W - Allows ≥278 W power dissipation with 125 °C case temperature, enabling compact heatsink design.
E_AS	1200 mJ - Withstands single-pulse inductive energy in motor phase-legs without failure under defined test conditions.

Pinout & Package

Package: PG-WHSON-8 (exposed thermal pad, bottom-side cooled), 5.0 mm × 6.0 mm footprint, 0.75 mm height, RoHS and halogen-free compliant.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Pins 5–8 + tab)	Main current path (high-side or low-side switch node)	Tab is electrically connected to drain; requires isolated thermal interface when mounted to heatsink.
Gate (Pin 4)	Control input for channel modulation	Logic-compatible input; gate resistance R_G = 0.47 Ω supports stable high-speed switching.
Source (Pins 1–3)	Reference node for gate drive and current sensing	Three parallel pins reduce source inductance and improve current sharing in high-di/dt applications.
Internal body diode	Integrated freewheeling path	Enables synchronous rectification without external diode; V_SD = 0.72–1.0 V at 50 A ensures low reverse conduction loss.

Key Features

Feature	Design Value
Double-side cooling architecture	Simultaneous heat extraction via top (0.56 °C/W) and bottom (0.45 °C/W) thermal paths enables PCB-integrated thermal management.
100% avalanche tested	Each unit validated to withstand 1200 mJ single-pulse avalanche energy per JEDEC JESD24-11, ensuring field reliability in inductive load switching.
Optimized Q_gd/Q_gs ratio	Q_gd = 18–27 nC at V_GS = 0–4.5 V minimizes Miller-induced shoot-through risk in high-dV/dt environments.
Low R_DS(on) temperature coefficient	R_DS(on) increases only ~1.6× from 25 °C to 150 °C (per Diagram 9), maintaining predictable conduction loss across operating range.
Logic-level gate drive	V_GS(th) = 1.2–2.0 V allows direct interfacing with 3.3 V microcontrollers and PWM controllers without level-shifting circuitry.

Applications

Server VRM Power Stage

Industrial BLDC Motor Inverter

Use Scenario: High-current, high-efficiency point-of-load conversion in AI accelerator racks with 48 V input and sub-1 V output.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck converter, switching at 800 kHz–1 MHz.

Use Value: 0.35 mΩ R_DS(on) reduces conduction loss by >40% vs. legacy 0.6 mΩ devices, enabling 95%+ efficiency at 600 A load.

Use Scenario: 3-phase inverter driving 10–20 kW permanent magnet motors in CNC machines and robotic arms.

IC Role / Device Role / Timing Role: High-current half-bridge switch with integrated body diode for regenerative braking and PWM commutation.

Use Value: 700 A continuous rating and 2800 A pulsed capability eliminate paralleling requirements; 1200 mJ E_AS prevents failure during short-circuit events.

EV Onboard Charger (OBC) PFC Stage

High-Power DC-DC Converter (48 V–12 V)

Use Scenario: Totem-pole PFC front-end in bi-directional OBCs handling up to 11 kW grid-to-battery transfer.

IC Role / Device Role / Timing Role: Fast-switching, low-Q_rr active switch in AC-side leg, operating with zero-voltage switching (ZVS).

Use Value: Q_oss = 3300–4300 pF and t_rr = 33–98 ns enable reliable ZVS across wide load range, reducing switching loss by 30% vs. Si superjunction.

Use Scenario: Step-down conversion from 48 V mild-hybrid bus to 12 V auxiliary systems in commercial vehicles.

IC Role / Device Role / Timing Role: Primary-side switch in interleaved buck converter running at 300–500 kHz with current-mode control.

Use Value: Dual thermal path (0.45/0.56 °C/W) allows full 700 A rating with passive cooling, eliminating need for forced-air fans in space-constrained enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFH7107TRPBF	R_DS(on) = 0.42 mΩ (higher), Q_g = 102 nC (higher), no double-side cooling spec	Limited to single-side cooling; lower current rating (520 A) restricts use in >8 kW designs	Select if cost-sensitive and thermal budget permits higher R_DS(on) penalty; verify PCB copper area meets 50 °C/W R_thJA.
STL220N3LLH6	R_DS(on) = 0.32 mΩ (slightly lower), but Q_g = 125 nC (37% higher), no avalanche rating published	Higher gate drive power required; lack of JEDEC avalanche validation limits use in safety-critical motor drives	Prefer for ultra-low conduction loss where switching frequency <300 kHz and avalanche stress is absent.

Compared with IRFH7107TRPBF and STL220N3LLH6, IQDH35N03LM5SCATMA1 uniquely combines 0.35 mΩ R_DS(on), 91 nC Q_g, double thermal path, and JEDEC-qualified avalanche ruggedness-making it optimal for high-reliability, high-power-density industrial and automotive power stages.

Availability

IQDH35N03LM5SCATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, EV onboard chargers, and high-power DC-DC converters requiring stable component supply and long-term industrial lifecycle support.

Supply support for IQDH35N03LM5SCATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor solutions, and automotive ICs, with global manufacturing and R&D infrastructure.

This device belongs to the OptiMOS™ 5 product line, engineered specifically for high-current, high-efficiency power conversion in datacenter, industrial automation, and e-mobility applications where thermal performance and ruggedness are critical.

FAQ

What is the maximum allowable case temperature for continuous operation?

The datasheet specifies T_C = 150 °C as the absolute maximum case temperature. At this temperature, the continuous drain current is derated to 414 A (V_GS = 10 V). Thermal design must ensure the exposed tab remains ≤150 °C under worst-case ambient and airflow conditions, verified using the 0.45 °C/W R_thJC(bottom) value.

Can IQDH35N03LM5SCATMA1 be used in synchronous rectification without an external Schottky diode?

Yes-the integrated body diode is characterized with V_SD = 0.72–1.0 V at 50 A and t_rr = 33–98 ns, making it suitable for synchronous rectification in buck converters up to 1 MHz. However, for lowest forward loss in high-duty-cycle applications, an external Schottky may still be preferred.

Is the PG-WHSON-8 package compatible with standard reflow profiles?

Yes-Infineon qualifies this package for lead-free reflow per JEDEC J-STD-020, with peak temperature ≤260 °C and time above liquidus ≤60 seconds. The exposed drain tab requires solder paste stencil design matching the 4.5 mm × 5.5 mm thermal pad area and 0.15 mm thickness for optimal void control.

Does the device require gate resistors for stability in hard-switched applications?

Yes-a series gate resistor (typically 1–5 Ω) is recommended to dampen ringing caused by parasitic L_g–C_iss resonance and prevent false turn-on due to dV/dt coupling. The internal R_G = 0.47 Ω is insufficient alone; external resistance ensures controlled 5–14 ns rise/fall times and robust noise immunity.

IQDH35N03LM5SCATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 8-PowerWDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 66A (Ta), 700A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 0.35mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2V @ 1.46mA

Gate Charge (Qg) (Max) @ Vgs:: 114 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 18000 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 278W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-WHSON-8-U02

IQDH35N03LM5SCATMA1 FAQ

1.How can I place an order for IQDH35N03LM5SCATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IQDH35N03LM5SCATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IQDH35N03LM5SCATMA1 reliable?

The price and inventory of IQDH35N03LM5SCATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IQDH35N03LM5SCATMA1 is usually 5 days.

3.What payment methods are accepted for IQDH35N03LM5SCATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IQDH35N03LM5SCATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IQDH35N03LM5SCATMA1?

IQDH35N03LM5SCATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IQDH35N03LM5SCATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IQDH35N03LM5SCATMA1?

For technical support, including IQDH35N03LM5SCATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IQDH35N03LM5SCATMA1 requirements.

6.How does Aetrix verify that IQDH35N03LM5SCATMA1 is sourced from the original manufacturer or authorized distributors?

All IQDH35N03LM5SCATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IQDH35N03LM5SCATMA1 meets industry standards.

7.What is the process for return or replacement of IQDH35N03LM5SCATMA1?

All IQDH35N03LM5SCATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IQDH35N03LM5SCATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IQDH35N03LM5SCATMA1 part is unused and in its original packaging.

Return procedure for IQDH35N03LM5SCATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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