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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IQDH45N04LM6CGSCATMA1

Name: IQDH45N04LM6CGSCATMA1
Brand: Infineon Technologies
SKU: IQDH45N04LM6CGSCATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IQDH45N04LM6CGSCATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 9-PowerWDFN

Datasheet:: IQDH45N04LM6CGSCATMA1.pdf

Description:: OPTIMOS POWER MOSFETS 25 V - 150

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Product details

Overview

IQDH45N04LM6CGSCATMA1 from Infineon is an N-channel logic-level OptiMOS™ 6 power MOSFET rated at 40 V, 0.49 mΩ R_DS(on) (max), 611 A continuous drain current (T_C = 25 °C), and 142 nC output charge (Q_oss). It features double-side cooling capability, 100% avalanche tested construction, and PG-WHTFN-9 package with exposed drain tab for thermal optimization - deployed in high-current synchronous buck converters and server VRMs.

For engineers reviewing the IQDH45N04LM6CGSCATMA1 datasheet, IQDH45N04LM6CGSCATMA1 pinout, IQDH45N04LM6CGSCATMA1 application, or IQDH45N04LM6CGSCATMA1 equivalent, key selection criteria include its 0.45 °C/W junction-to-case (bottom) thermal resistance, 4.5 V gate drive compatibility, 2.3 V max gate threshold voltage, and integrated body diode with 54 ns t_rr at 25 A.

Technical Context

This device implements a trench-based silicon MOSFET architecture optimized for high-frequency switching in DC-DC conversion stages. Its 0.49 mΩ R_DS(on) at V_GS = 10 V and 0.58 mΩ at V_GS = 4.5 V enables low conduction loss in 48 V input–12 V output server power supplies.

The PG-WHTFN-9 package integrates a thermally enhanced bottom-exposed drain pad and top-side source terminals, supporting dual-sided PCB cooling. Gate charge parameters - Q_g = 62 nC (to 10 V), Q_gd = 23 nC, Q_oss = 142 nC - reflect fast, low-loss switching behavior suitable for >500 kHz operation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 36–48 V bus systems
R_DS(on), max	0.49 mΩ at V_GS = 10 V - Enables <1.5 W conduction loss at 600 A in VRM phase legs
I_D, cont	611 A at T_C = 25 °C - Supports multi-phase high-current CPU/GPU power delivery
Q_oss	142 nC - Low output capacitance minimizes turn-off energy and improves light-load efficiency
R_thJC (bottom)	0.45 °C/W - Enables direct heatsink mounting on drain tab for sub-60 °C junction rise at full load
t_rr	54 ns at I_F = 25 A - Fast body diode recovery reduces shoot-through risk in synchronous rectification
V_GS(th)	1.3–2.3 V - Logic-level gate drive allows direct interface with 3.3 V/5 V controllers without level shifters

Pinout & Package

Package: PG-WHTFN-9 - Thermally optimized 9-pin wettable flank package with bottom-exposed drain tab (pins 5–8 and tab), gate on pin 9, and source on pins 1–4. Designed for automated optical solder inspection and double-side cooling.

Pin/Terminal	Circuit Role	Design Meaning
Pins 1–4	Source	Low-inductance parallel source connection to minimize common-source inductance in high-dI/dt switching
Pins 5–8 + Tab	Drain	Thermally coupled drain terminals enabling direct heatsink attachment and <0.5 °C/W thermal path
Pin 9	Gate	Isolated gate input with 0.68 Ω internal gate resistance - reduces ringing and simplifies external gate driver design

Key Features

Feature	Design Value
Double-side cooling support	Separate top-side source and bottom-exposed drain enable simultaneous top heatsink + bottom PCB copper cooling
100% avalanche rated	Guaranteed single-pulse avalanche energy of 1115 mJ - eliminates need for external snubbers in inductive load switching
Logic-level gate drive	V_GS(th) up to 2.3 V ensures reliable turn-on with 3.3 V microcontroller GPIO or PWM controller outputs
Halogen-free & RoHS compliant	Meets IEC61249-2-21 and JEDEC industrial qualification - supports long-lifecycle industrial and telecom deployments
Optimized Q_g/R_DS(on) ratio	62 nC total gate charge per 0.49 mΩ delivers superior figure-of-merit (FOM) for high-frequency VRM applications

Applications

Server VRM Phase Legs

AI Accelerator Power Stages

Use Scenario: High-current, multi-phase buck converter supplying 50–1000 A to CPUs and GPUs in datacenter servers.

IC Role / Device Role / Timing Role: High-side synchronous FET in interleaved 3–6 phase topology operating at 300–800 kHz.

Use Value: 0.45 °C/W R_thJC and 611 A rating allow compact thermal design without forced air; 142 nC Q_oss reduces switching loss at high frequency.

Use Scenario: Point-of-load regulation for AI training accelerators requiring rapid dynamic current response and ultra-low voltage ripple.

IC Role / Device Role / Timing Role: Low-R_DS(on) power switch in adaptive voltage positioning (AVP) circuits with digital PWM control.

Use Value: 4.5 V gate drive compatibility enables direct interface with digital controllers; 54 ns t_rr prevents cross-conduction during fast load transients.

Industrial Motor Drive Inverters

Telecom 48 V Intermediate Bus Converters

Use Scenario: 3-phase inverter stage in servo drives and PLC-controlled motor systems operating up to 20 kHz PWM.

IC Role / Device Role / Timing Role: Half-bridge leg switch handling peak currents >400 A with robust short-circuit withstand capability.

Use Value: 100% avalanche testing ensures reliability under inductive fault conditions; 0.58 mΩ R_DS(on) at 4.5 V supports gate drive from isolated DC-DC bias rails.

Use Scenario: Isolated or non-isolated 48 V–12 V/5 V intermediate bus converter in 5G base station power systems.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier or secondary-side high-current switch in fixed-frequency resonant topologies.

Use Value: 175 °C max junction temperature and -55 °C min storage rating support extended outdoor deployment; halogen-free construction meets telecom environmental standards.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFH7185TRPBF	R_DS(on) = 0.52 mΩ (10 V), Q_oss = 135 nC, PG-HSOF-8 package, no top-side source pins	Lacks double-side cooling; higher R_thJC (0.65 °C/W); unsuitable for >500 A continuous operation	Prefer when board space is constrained and thermal budget allows single-side cooling only
STL220N4F7AG	R_DS(on) = 0.45 mΩ (10 V), Q_oss = 168 nC, PowerFLAT 5x6 package, no drain tab	No exposed drain for heatsinking; lower avalanche rating (not 100% tested); higher Q_oss increases switching loss above 400 kHz	Prefer where cost sensitivity outweighs thermal performance and avalanche robustness requirements

Compared with IRFH7185TRPBF and STL220N4F7AG, IQDH45N04LM6CGSCATMA1 delivers superior thermal management via dual-side cooling, verified avalanche ruggedness, and lowest Q_oss/R_DS(on) FOM - making it optimal for high-reliability, high-power-density server and AI power stages.

Availability

IQDH45N04LM6CGSCATMA1 is available at Aetrix Electronics and suitable for server VRMs, AI accelerator power stages, and industrial motor drive inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IQDH45N04LM6CGSCATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive ICs, and security solutions, with global manufacturing and R&D infrastructure.

This part belongs to the OptiMOS™ 6 product line - engineered specifically for high-efficiency, high-current DC-DC conversion in datacenter, AI, and industrial power systems where thermal density and switching speed are critical.

FAQ

What is the maximum allowable case temperature for continuous operation?

The datasheet specifies a maximum operating case temperature of 175 °C. At T_C = 100 °C, the continuous drain current derates to 397 A (V_GS = 10 V). Thermal design must maintain case temperature within this limit using the measured R_thJC = 0.45 °C/W (bottom) and appropriate heatsink interface.

Does this MOSFET require a negative gate voltage for safe turn-off?

No. The device has a gate-source voltage rating of ±20 V and is designed for positive-only gate drive. A gate voltage of 0 V fully turns off the device; applying negative voltage is unnecessary and not recommended unless required by specific controller architecture for noise immunity.

Can the internal body diode be used for synchronous rectification?

Yes - the body diode is fully characterized with t_rr = 54 ns (25 A) and Q_rr = 63 nC. However, its forward voltage (0.76–1.0 V) is higher than discrete Schottky diodes; use is appropriate only when layout constraints or cost prohibit external diodes in low-duty-cycle freewheeling paths.

Is the PG-WHTFN-9 package compatible with standard reflow profiles?

Yes - the package is qualified for lead-free reflow per J-STD-020, with peak temperature up to 260 °C. Its wettable flanks support automated optical inspection (AOI), and the exposed drain tab requires controlled solder paste volume to ensure void-free thermal interface without solder bridging to adjacent pins.

IQDH45N04LM6CGSCATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 6

Package/Case:: 9-PowerWDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 58A (Ta), 611A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 0.49mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 1.449mA

Gate Charge (Qg) (Max) @ Vgs:: 78 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 12000 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 333W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-WHTFN-9-U02

IQDH45N04LM6CGSCATMA1 FAQ

1.How can I place an order for IQDH45N04LM6CGSCATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IQDH45N04LM6CGSCATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IQDH45N04LM6CGSCATMA1 reliable?

The price and inventory of IQDH45N04LM6CGSCATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IQDH45N04LM6CGSCATMA1 is usually 5 days.

3.What payment methods are accepted for IQDH45N04LM6CGSCATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IQDH45N04LM6CGSCATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IQDH45N04LM6CGSCATMA1?

IQDH45N04LM6CGSCATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IQDH45N04LM6CGSCATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IQDH45N04LM6CGSCATMA1?

For technical support, including IQDH45N04LM6CGSCATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IQDH45N04LM6CGSCATMA1 requirements.

6.How does Aetrix verify that IQDH45N04LM6CGSCATMA1 is sourced from the original manufacturer or authorized distributors?

All IQDH45N04LM6CGSCATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IQDH45N04LM6CGSCATMA1 meets industry standards.

7.What is the process for return or replacement of IQDH45N04LM6CGSCATMA1?

All IQDH45N04LM6CGSCATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IQDH45N04LM6CGSCATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IQDH45N04LM6CGSCATMA1 part is unused and in its original packaging.

Return procedure for IQDH45N04LM6CGSCATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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