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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IQDH45N04LM6SCATMA1

Name: IQDH45N04LM6SCATMA1
Brand: Infineon Technologies
SKU: IQDH45N04LM6SCATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IQDH45N04LM6SCATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerWDFN

Datasheet:: IQDH45N04LM6SCATMA1.pdf

Description:: OPTIMOS POWER MOSFETS 25 V - 150

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IQDH45N04LM6SCATMA1 from Infineon is an N-channel logic-level MOSFET in PG-WHSON-8 package, rated for 40 V drain-source voltage, 0.49 mΩ typical R_DS(on) at V_GS = 10 V, 611 A continuous drain current (T_C = 25 °C), and optimized for double-side cooling in high-current DC-DC converters and motor drives.

For engineers reviewing the IQDH45N04LM6SCATMA1 datasheet, IQDH45N04LM6SCATMA1 pinout, IQDH45N04LM6SCATMA1 application, or IQDH45N04LM6SCATMA1 equivalent, this OptiMOS™ 6 device delivers ultra-low conduction loss, 100% avalanche-tested ruggedness, and industry-qualified thermal performance for industrial power stages requiring >500 A peak current capability.

Technical Context

This MOSFET employs a trench-based silicon process with optimized cell pitch and deep-trench gate structure to achieve sub-0.5 mΩ R_DS(on) while maintaining 40 V breakdown margin and low Q_g/Q_gd ratio (62 nC total gate charge, 15–23 nC Q_gd). Its dual-side cooling design enables thermal resistance as low as 0.45 °C/W (junction-to-case, bottom).

The device integrates a robust body diode with 285 A continuous forward current rating, 54–108 ns reverse recovery time (t_rr), and 63–554 nC Q_rr, supporting synchronous rectification and hard-switched topologies without external freewheeling diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 12 V/24 V/48 V bus systems and 40 V automotive auxiliary rails.
R_DS(on), max	0.58 mΩ - Ensures ≤290 W conduction loss at 611 A, enabling single-device replacement of parallel MOSFETs in high-current power stages.
I_D, cont	611 A @ T_C = 25 °C - Supports >500 A output in server VRMs, telecom rectifiers, and EV onboard chargers with minimal heatsinking.
Q_g, tot	62 nC @ V_GS = 0–4.5 V - Enables efficient gate driving with standard 1–2 A drivers at 100–500 kHz switching frequencies.
R_thJC, bot	0.45 °C/W - Allows direct thermal interface to cold plate on PCB bottom side, reducing junction temperature rise by ≥30 % vs. single-side cooled packages.
E_AS	1115 mJ - Withstands single-pulse inductive energy up to 1.1 J without failure, critical for motor phase-leg short-circuit robustness.
V_GS(th)	1.3–2.3 V - Logic-level threshold ensures full enhancement with 3.3 V or 5 V gate drive, eliminating need for level shifters in microcontroller-based control.

Pinout & Package

Package: PG-WHSON-8 (exposed thermal pad, 5 mm × 6 mm footprint), designed for double-side cooling with solderable bottom thermal tab and top-side thermal path via die attach.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Pins 5–8 + Tab)	Main current path from source to load	Tab is electrically connected to drain - must be isolated from PCB ground plane and thermally coupled to heatsink or cold plate.
Gate (Pin 4)	Control terminal for channel modulation	Low-impedance input (R_G = 0.68 Ω) - supports fast turn-on/turn-off with minimal gate ringing when properly routed and terminated.
Source (Pins 1–3)	Reference node for gate drive and current sensing	Three-pin parallel connection reduces source inductance (<1 nH typical), critical for minimizing voltage overshoot during high di/dt switching.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	0.49 mΩ typ. @ V_GS = 10 V - Reduces conduction losses by ≥40 % versus prior-gen 40 V OptiMOS™ devices in 600 A applications.
Double-side cooling support	0.45 °C/W (bottom) + 0.56 °C/W (top) thermal resistance - Enables thermal management flexibility in constrained 2U/1U power supplies and traction inverters.
100 % avalanche tested	1115 mJ single-pulse E_AS - Guarantees ruggedness against inductive kickback in motor drives and relay/snubber-free DC contactor designs.
Logic-level gate drive	V_GS(th) = 1.3–2.3 V - Compatible with 3.3 V FPGA I/O, ARM Cortex-M GPIO, and digital PWM controllers without gate driver ICs.
Halogen-free & RoHS compliant	Meets IEC61249-2-21 and JEDEC J-STD-020 - Qualified for industrial and automotive under-hood environments per AEC-Q101 stress test requirements.

Applications

Server Voltage Regulator Modules

Industrial Motor Drives

Use Scenario: High-density 48 V → 0.8 V VRM delivering >600 A to AI accelerators and CPUs.

IC Role / Device Role / Timing Role: Synchronous high-side switch in multiphase buck converter, operating at 300–500 kHz with <10 ns dead-time control.

Use Value: Sub-0.5 mΩ R_DS(on) cuts conduction loss by 35 % vs. 0.75 mΩ alternatives, enabling 95.2 % peak efficiency at 500 A load.

Use Scenario: 3-phase inverter stage for 15 kW servo drives in CNC machinery and robotic arms.

IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET hybrid topology, handling 400 A peak phase current with forced air cooling.

Use Value: Dual thermal paths reduce junction temperature by 22 °C at 400 A, extending lifetime beyond 100,000 hours MTBF.

Telecom Rectifier Units

EV Onboard Chargers (OBC)

Use Scenario: 48 V DC-DC front-end stage converting -48 V telecom battery backup to 12 V system rail.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier in phase-shifted full-bridge topology, switching at 200 kHz.

Use Value: Low Q_g/Q_gd ratio (62 nC / 15–23 nC) minimizes switching loss and EMI, achieving <150 mVpp output ripple at full load.

Use Scenario: Bidirectional AC/DC and DC/DC conversion in 11 kW OBC with SiC PFC and GaN LLC stages.

IC Role / Device Role / Timing Role: Secondary-side synchronous FET in LLC resonant converter, operating in ZVS mode with 50 A RMS current.

Use Value: Optimized body diode t_rr (54–108 ns) and Q_rr (63–554 nC) suppress reverse recovery spikes, eliminating snubbers and reducing BOM count by 3 components per phase.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL1404ZPBF	R_DS(on) = 3.4 mΩ (typ), I_D = 160 A, TO-220 package, single-side cooled	Limited to ≤200 A continuous; requires larger heatsink and higher gate drive current (Q_g = 110 nC)	Use only where space allows TO-220 mounting and peak current stays below 200 A.
STL220N4F7AG	R_DS(on) = 0.38 mΩ (typ), 220 A rating, PowerFLAT 5×6 package, no exposed drain tab	No bottom-side thermal path; R_thJC = 1.2 °C/W limits sustained >300 A operation	Select when board layout prohibits drain-tab soldering but ultra-low R_DS(on) is prioritized over thermal headroom.

Compared with IRL1404ZPBF and STL220N4F7AG, IQDH45N04LM6SCATMA1 uniquely combines 611 A current capability, 0.45 °C/W bottom-side thermal resistance, and logic-level gate drive - making it the only option qualified for >500 A double-sided cooled industrial power stages without derating.

Availability

IQDH45N04LM6SCATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, telecom rectifiers, and EV onboard chargers requiring stable component supply across multi-year production cycles.

Supply support for IQDH45N04LM6SCATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

This device belongs to the OptiMOS™ 6 family - engineered specifically for high-current, high-efficiency power conversion in datacenter, industrial automation, and e-mobility applications where thermal density and avalanche ruggedness are critical.

FAQ

What is the maximum allowable case temperature for continuous operation?

The datasheet specifies T_C = 175 °C as the absolute maximum case temperature. For continuous 611 A operation, thermal design must maintain T_C ≤ 25 °C using double-side cooling; at T_C = 100 °C, current rating de-rates to 397 A per Table 2. PCB layout, copper area, and heatsink interface directly determine achievable T_C.

Can IQDH45N04LM6SCATMA1 be used in synchronous rectification without external Schottky diodes?

Yes - its integrated body diode is rated for 285 A continuous forward current and exhibits 54–108 ns reverse recovery time with controlled Q_rr. In LLC and phase-shifted full-bridge topologies operating at ≤300 kHz, it replaces discrete Schottkys while maintaining ZVS and reducing conduction loss by 15–20 %.

Is the drain tab electrically isolated from the PCB ground plane?

Yes - the exposed drain tab is at drain potential and must be electrically isolated from any grounded copper pour. It is intended for thermal connection only to an insulated heatsink or cold plate. Improper isolation causes short-circuit failure; use dielectric thermal pads or ceramic insulators per Infineon's mounting guidelines.

Does this part support gate drive voltages below 4.5 V?

Yes - V_GS(th) ranges from 1.3 V to 2.3 V, and R_DS(on) remains ≤0.85 mΩ at V_GS = 4.5 V (Table 4). At 3.3 V gate drive, it delivers ~420 A continuous current (derated per Figure 2), making it viable for low-voltage controller interfaces without level-shifting circuitry.

IQDH45N04LM6SCATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 6

Package/Case:: 8-PowerWDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 58A (Ta), 611A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 0.49mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 1.449mA

Gate Charge (Qg) (Max) @ Vgs:: 78 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 12000 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 333W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-WHSON-8-U02

IQDH45N04LM6SCATMA1 FAQ

1.How can I place an order for IQDH45N04LM6SCATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IQDH45N04LM6SCATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IQDH45N04LM6SCATMA1 reliable?

The price and inventory of IQDH45N04LM6SCATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IQDH45N04LM6SCATMA1 is usually 5 days.

3.What payment methods are accepted for IQDH45N04LM6SCATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IQDH45N04LM6SCATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IQDH45N04LM6SCATMA1?

IQDH45N04LM6SCATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IQDH45N04LM6SCATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IQDH45N04LM6SCATMA1?

For technical support, including IQDH45N04LM6SCATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IQDH45N04LM6SCATMA1 requirements.

6.How does Aetrix verify that IQDH45N04LM6SCATMA1 is sourced from the original manufacturer or authorized distributors?

All IQDH45N04LM6SCATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IQDH45N04LM6SCATMA1 meets industry standards.

7.What is the process for return or replacement of IQDH45N04LM6SCATMA1?

All IQDH45N04LM6SCATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IQDH45N04LM6SCATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IQDH45N04LM6SCATMA1 part is unused and in its original packaging.

Return procedure for IQDH45N04LM6SCATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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